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On this page, you can select 「MainGroup」 or 「Facet」 in C30B. |
HB:Handbook | ||||
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Select the desired 「MainGroup」 or 「facet」 etc. |
CC:Concordance | ||||
| Single-crystal growth from solids or gels[3] | |||||
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Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B 3/00; under a protective fluid C30B 27/00) [3] | HB | CC | 4G077 | |
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Unidirectional demixing of eutectoid materials [3] | HB | CC | 4G077 | |
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Single-crystal growth from gels (under a protective fluid C30B 27/00) [3] | HB | CC | 4G077 | |
| Single-crystal growth from liquids; Unidirectional solidification of eutectic materials[3] | |||||
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Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions (from molten solvents C30B 9/00; by normal or gradient freezing C30B 11/00; under a protective fluid C30B 27/00) [3] | HB | CC | 4G077 | |
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Single-crystal growth from melt solutions using molten solvents (by normal or gradient freezing C30B 11/00; by zone-melting C30B 13/00; by crystal pulling C30B 15/00; on immersed seed crystal C30B 17/00; by liquid phase epitaxial growth C30B 19/00; under a protective fluid C30B 27/00) [3] | HB | CC | 4G077 | |
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Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method (C30B 13/00, C30B 15/00, C30B 17/00, C30B 19/00 take precedence; under a protective fluid C30B 27/00) [3] | HB | CC | 4G077 | |
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Single-crystal growth by zone-melting; Refining by zone-melting (C30B 17/00 takes precedence; by changing the cross-section of the treated solid C30B 15/00; under a protective fluid C30B 27/00; for the growth of homogeneous polycrystalline material with defined structure C30B 28/00) [2006.01] | HB | CC | 4G077 | |
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Single-crystal growth by pulling from a melt, e.g. Czochralski method (under a protective fluid C30B 27/00) [3] | HB | CC | 4G077 | |
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Single-crystal growth on to a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method (C30B 15/00 takes precedence) [3] | HB | CC | 4G077 | |
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Liquid-phase epitaxial-layer growth [3] | HB | CC | 4G077 | |
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Unidirectional solidification of eutectic materials [3] | HB | CC | 4G077 | |
| Single-crystal growth from vapours[3] | |||||
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Single-crystal growth by condensing evaporated or sublimed materials [3] | HB | CC | 4G077 | |
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Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth [3] | HB | CC | 4G077 | |
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Single-crystal growth under a protective fluid [3] | HB | CC | 4G077 | |
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Production of homogeneous polycrystalline material with defined structure [5] | HB | CC | 4G077 | |
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Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape | HB | CC | 4G077 | |
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Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions [5] | HB | CC | 4G077 | |
| After-treatment of single crystals or homogeneous polycrystalline material with defined structure[3,5] | |||||
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Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor [3,5] | HB | CC | 4G077 | |
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After-treatment of single crystals or homogeneous polycrystalline material with defined structure (C30B 31/00takes precedence) [3,5] | HB | CC | 4G077 | |
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Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure [3,5] | HB | CC | 4G077 | |