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This page displays all 「FI」 in main group C30B25/00. |
HB:Handbook | ||||
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CC:Concordance | |||||
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Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth [3] | HB | CC | 4G077 | |
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.Epitaxial-layer growth [3] | HB | CC | 4G077 | |
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Using plasma | HB | CC | 4G077 | |
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Others | HB | CC | 4G077 | |
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..Pattern deposit, e.g. by using masks [3] | HB | CC | 4G077 | |
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..by reactive sputtering [3] | HB | CC | 4G077 | |
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..Reaction chambers; Selection of materials therefor [3] | HB | CC | 4G077 | |
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..Heating of the reaction chamber or the substrate [3] | HB | CC | 4G077 | |
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..Substrate holders or susceptors [3] | HB | CC | 4G077 | |
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..Feed and outlet means for the gases; Modifying the flow of the reactive gases [3] | HB | CC | 4G077 | |
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..Controlling or regulating (controlling or regulating in general G05) [3] | HB | CC | 4G077 | |
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..characterised by the substrate [3] | HB | CC | 4G077 | |
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...the substrate being of the same materials as the epitaxial layer [3] | HB | CC | 4G077 | |
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..Sandwich processes [3] | HB | CC | 4G077 | |