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F-Term-List

4G077 Crystals, and after-treatments of crystals
C30B1/00 -35/00
C30B1/00-35/00 AA AA00
FORMS OF CRYSTALS AS PURPOSE OR FOR TREATMENTS 		AA01 AA02 AA03 AA04 AA07 AA08 AA10
. Granular . bulky e.g. ingot-like . filmy . Filamentary fibrous or whisker-like . Polycrystalline materials oriented in selected direction . Polycrystalline materials comprising crystal grains larger than normal . Others
AB AB00
FEATURES OF CRYSTALS PER SE (CLASSIFIED BASED ON THE CLAIMS) 		AB01 AB02 AB03 AB04 AB05 AB06 AB07 AB08 AB09 AB10
. Specification of impurity concentration carrier concentration or dislocation concentration . Specification of orientations of grown crystals . Specification of physical property values . . Specification of optical property values . . Specification of magnetic property values . . Specification of electrical property values . . Specification of lattice constants and lattice spacing . . Specification of spectral values for X-rays infrared rays or the like . Specification of crystal diameter fibre length or fibre diameter . Others
BA BA00
MATERIALS 1, E.G. ELEMENTS, ALLOYS 		BA01 BA02 BA03 BA04 BA05 BA07 BA08 BA09 BA10
. Elements * . . Carbon . . . Diamonds including diamond-like carbon . . Si . . Ge . Alloys * . . containing Ni . . containing Fe . . containing Si (see BE05 for binary alloys with silicon)
BB BB00
MATERIALS 2, E.G. OXIDES 		BB01 BB02 BB03 BB04 BB05 BB06 BB07 BB08 BB09 BB10
. of Al . of Mg . of Si . of Ti . of Fe . of Te . of Zn . of V . of Sn . Others *
BC BC00
MATERIALS 3, E.G. COMPOSITE OXIDES 		BC01 BC02 BC03 BC05 BC06 BC07 BC08
. containing Al (other places take precedence) * . containing Bi (other places take precedence) * . . containing in alkaline-earth metals or Pb . Ferrites . . containing Ba Sr or Pb . . containing Zn . . . containing Zn and Mn
BC11 BC12 BC13 BC15 BC16 BC17
. AMO3 type of which a part or the entirety of A is a rare earth element * . . M being Fe . . M being Al . AM2O4 type (see BC05 for M being Fe) * . . MgAl2O4 or spinel . . BeAl2O4 or chrysoberyl
BC21 BC22 BC23 BC24 BC25 BC27 BC28
. A3M5O12 where a part or the entirety of A is a rare earth element * . . containing Fe but not containing Ga or Al . . containing Ga but not Fe or Al . . containing Al but not Fe or Ga . . containing two or more of Fe Ga or Al . . containing Bi (multiple classification place) . . containing Gd (multiple classification place)
BC31 BC32 BC33 BC34 BC36 BC37 BC38 BC40
. Niobates * . . Lithium niobate . . containing alkaline-earth elements . . containing Pb . Tantalates * . . Lithium tantalate or LiTaO3 . Vanadates * . Composite acid salts of Nb Ta and V
BC41 BC42 BC43 BC44 BC45 BC46 BC47 BC48 BC50
. Titanates * . . containing alkaline-earth elements . . containing Pb . Germanates * . . containing Bi . Molybdates * . . containing Pb . Tungstates * . Cuprates or -CuxOy type compounds (BC51 takes precedence)
BC51 BC52 BC53 BC54 BC55 BC56 BC57 BC58 BC60
. Superconducting oxides * . . containing Cu (BC57 takes precedence) . . . RE-(Ca Sr Ba)-Cu-O . . . . containing Pb . . . . RE-Sr-Ca-Cu-O . . . Tl-(Ca Sr Ba)-Cu-O . . containing Bi * . . . Bi-(Ca Sr Ba)-Cu-O . Others
BD BD00
MATERIALS 4, E.G. OXO ACID SALTS 		BD01 BD02 BD03 BD04 BD06 BD07 BD08 BD09 BD10
. Phosphates * . . containing Al . . containing Ti . . containing rare-earth elements . Borates * . . containing Li . . containing alkaline-earth elements . Sulfates * . Carbonates *
BD11 BD12 BD13 BD14 BD15 BD16 BD17 BD20
. Silicates * . . containing Bi . . . containing Ge . . containing alkaline-earth elements . . containing rare earth elements . . containing Al . . . containing Be e.g. beryl emerald . Others
BE BE00
MATERIALS 5, E.G. -COMPOUNDS 		BE01 BE02 BE03 BE04 BE05 BE06 BE07 BE08 BE09
. Halides * . . F * . . Cl * . . I * . Silicide * . Borides * . Carbides * . . SiC . . TiC
BE11 BE12 BE13 BE14 BE15 BE16 BE18 BE19
. Nitrides * . . BN . . AlN . . Si3N4 . . GaN . . Li3N . Carbon nitrides * . Oxynitrides or oxycarbon nitrides *
BE21 BE22 BE23 BE25 BE26 BE28 BE29 BE30
. S Se Te compounds (BE28 and BE31 take precedence) * . . Sulfides . . . CuS . . Selenides * . . Tellurides * . 4-6 Compounds or group 4 elements being Pb or Sn * . . PbTe . . Compounds of three or more elements *
BE31 BE32 BE33 BE34 BE35 BE36 BE37
. 2-6 Compounds (BE21 takes precedence) * . . Sulfides * . . . CdS . . Selenides * . . Tellurides . . containing two or more of group 2 elements or Zn Cd and Hg * . . containing two or more of group 6 elements or S Se and Te *
BE41 BE42 BE43 BE44 BE45 BE46 BE47 BE48 BE50
. 3-5 Compounds or group 5 elements being P As and Sb * . . Phosphides * . . . GaP . . . InP . . Arsenides * . . . GaAs . . containing two or more of group 3 elements or Al Ga and In * . . containing two or more of group 5 elements or P As and Sb * . Others
BF BF00
MATERIALS 6, E.G. ORGANIC SUBSTANCES 		BF01 BF02 BF03 BF04 BF05 BF10
. Aniline or derivatives thereof . Organic acids or derivatives thereof . . Tartaric acid or derivatives thereof . Macromolecular compounds . . Biological macromolecules e.g. proteins . Others
CA CA00
SOLID PHASE GROWTH 		CA01 CA02 CA03 CA04 CA05 CA06 CA07 CA08 CA09 CA10
. accompanying reactions . Growth conditions or control thereof . . by thermal treatments . . . characterised by heating conditions e.g. multistage heating . . . under temperature gradient . . . Zone heating . . characterised by ambient atmosphere or pressure . . . Selection of ambient gas or control of ambient gas pressure . growing crystals by joining with seed crystals or seed substrates . Others
CB CB00
LIQUID PHASE GROWTH 1, E.G. USE OF LIQUID SOLVENTS AT NORMAL TEMPERATURE 		CB01 CB02 CB03 CB04 CB05 CB06 CB08 CB10
. using non-aqueous solvents . using aqueous solvents . . under high temperature high pressure e.g. hydrothermal process . . . characterised by solvent compositions . . using electrolysis . Growth by evaporation of solvents . providing solutions or emulsions on substrates e.g. by coating . Others
CC CC00
LIQUID PHASE GROWTH 2, E.G. USE OF MOLTEN SOLVENTS (CG TAKES PRECEDENCE) 		CC01 CC02 CC03 CC04 CC05 CC06 CC10
. Selection of solvents . . Halide solvents . . Oxide solvents . . Metal solvents . Growth by solvent evaporation . by VLS methods . Others
CD CD00
LIQUID PHASE GROWTH 3, E.G. BY SOLIDIFICATION OF MELTS 		CD01 CD02 CD04 CD05 CD07 CD08 CD10
. Bridgman methods . . Longitudinal type . by gradient freezing method . Synthesis solute diffusion method or SSD method . Verneuil method . Solidification in casting moulds . Others
CE CE00
LIQUID PHASE GROWTH 4, E.G. ZONE-MELTING 		CE01 CE02 CE03 CE04 CE05 CE06 CE10
. using solvents . Growth in crucibles or vessels . by floating zone method . characterised by heating methods of molten zones . . Heating with light e.g. concentrated heating with infrared rays . providing zone melting to a film on substrates . Others
CF CF00
LIQUID PHASE GROWTH 5, E.G. PULLING FROM MELTS 		CF01 CF02 CF03 CF04 CF05 CF06 CF07 CF08 CF09 CF10
. characterised by pulling direction . characterised by the shape of pulling crystal excluding columnar shape . . Ribbon-shaped . . Linear . characterised by feeding charging methods of raw materials into crucible . . characterised by raw material feeding means during growth . . . Feeding of powdered raw materials . . . by bar-shaped raw materials . . . Feeding of liquid raw materials . Others
CG CG00
LIQUID PHASE GROWTH 6, E.G. LIQUID PHASE EPITAXY 		CG01 CG02 CG03 CG05 CG06 CG07 CG10
. Kinds of growth methods (unspecified kinds.) . . Dipping method . . Inclination method . using solvents . . characterised by compositions or materials of solvents . . . Solvent being one crystal component . Others
DA DA00
GAS PHASE GROWTH 1, E.G. DEPOSITION, SUBLIMATION 		DA01 DA02 DA03 DA04 DA05 DA06 DA07 DA08 DA09
. Vapour deposition onto substrates (additional classification of the use of sealed tubes in DA19) . . Evaporating evaporation sources by heating (DA05 takes precedence) . . . by laser beams . . . by electron beams . . Growth by molecular beam irradiation . . . Features of beam source parts . . . . Shapes structures or arrangements of molecular beam cells . . . . Shapes operations of shutters . . . . using gas flows as beam sources
DA11 DA12 DA13 DA14 DA15 DA16 DA17 DA18 DA19 DA20
. . by sputtering . . . by electric discharge or plasma . . . Irradiating target with ion beams . . . Selection or preparation of target materials . . ionising evaporated vapour . . feeding each component vapour alternately to substrates . Growth of non-film crystals e.g. granular crystals . . Growth of bulky crystals (additional classification of growth by the use of sealed tube in DA19) . using sealed tubes . Others
DB DB00
GAS PHASE GROWTH 2, E.G. CVD 		DB01 DB02 DB03 DB04 DB05 DB06 DB07 DB08 DB09
. Gas phase growth on substrates . . Selection of raw materials for reactions . . . Carbon monoxide carbon dioxide . . . Hydrides (DB05 takes precedence for compounds containing halogens) . . . Halides . . . Organic compounds . . . . Hydrocarbons . . . . Organometallic compounds e.g. MOCVD . . . . Organic silicon compounds
DB11 DB12 DB13 DB15 DB16 DB17 DB18 DB19 DB20
. Feeding outletting or treating of raw material gas . . Varying feeding quantity or composition ratios of gases during growth . . . Alternate feeding of each component gas . Means of heating thermal decomposition activation of reactive gases . . by plasmas . . . DC discharge plasmas . . . High frequency plasmas . . . Microwave plasmas . . . Cyclotron resonance plasmas
DB21 DB22 DB23 DB24 DB25 DB26 DB28 DB29 DB30
. . by heating bodies e.g. heating filaments . . . By electric field accelerated thermal electron irradiation (DB24 takes precedence) . . by combustion flames . . by energy beam irradiation (22 takes precedence) . . . Light irradiation . . . by ion beam irradiation . Growth not on substrates . using sealed tubes . Others
EA EA00
CRYSTAL GROWTH IN COMMON 1, E.G. CONTROL OF GROWTH CONDITIONS, EXCLUDING SOLID PHASE GROWTH 		EA01 EA02 EA03 EA04 EA05 EA06 EA07 EA08 EA10
. of temperature conditions e.g. melt temperature . . of substrates reaction zones . of pressure conditions . . Ambient gas pressure control thereof (EA08 takes precedence) . . . Reduced pressure ambient atmosphere . Selection or control of ambient gases or carrier gases . . Oxygen gas serving as ambient gas . . Vapour feed or vapour pressure control of volatile components . Others
EB EB00
CRYSTAL GROWTH IN COMMON 2, E.G. IMPURITY DOPING 		EB01 EB02 EB03 EB04 EB05 EB06 EB10
. Selection or specification of impurities (marked with double circle) . Doping by irradiating with impurity particle beams . adding impurities during growth excluding gas phase growth . . Use of gaseous dopants excluding gas phase growth . dispersing impurities in raw materials . Control of inevitable impurities . Others
EC EC00
CRYSTAL GROWTH IN COMMON 3, E.G. PREPARATION OR COMPOSITION OF RAW MATERIALS 		EC01 EC02 EC03 EC04 EC05 EC07 EC08 EC09 EC10
. Preparation of raw materials . . Preparation or synthesis of raw material powders or raw material masses . . . Synthesis by gas phase reactions . . . Synthesis by liquid phase reactions . . Preparation of shaped bodies of raw materials e.g. sintering of raw material bars . Preparation of raw material compositions . . of melt composition . . of compositions of raw material gas feeding gas e.g. mixing ratios . . Specification preparation of impurity concentrations in raw materials or raw material compositions
ED ED00
CRYSTAL GROWTH IN COMMON 4, E.G. SEED CRYSTALS OR SUBSTRATES 		ED01 ED02 ED04 ED05 ED06
. characterised by seed crystals . . Specification of crystallographic orientations of seed crystals . characterised by substrates e.g. shapes structures,, . . Specification of crystallographic orientations of substrate crystals . . Selection of substrate materials (marked with circle)
EE EE00
CRYSTAL GROWTH IN COMMON 5, E.G. TREATMENTS OR PROTECTIONS OF SUBSTRATES BEFORE GROWTH 		EE01 EE02 EE03 EE04 EE05 EE06 EE07 EE08 EE09 EE10
. Surface treatment of substrates (EF02 takes precedence) . . Cleaning or etching . . . by gas . . . by liquids . . formation of crystal nuclei . . coating formation e.g. protective films. (EF02 takes precedence) . . . Masking . . Doping into substrates . Operations for protecting substrates (EE01 takes precedence) . Others
EF EF00
CRYSTAL GROWTH IN COMMON 6, E.G. MULTILAYER GROWTH ONTO SUBSTRATES 		EF01 EF02 EF03 EF04 EF05
. formation of films in multilayer on substrates . . formation of buffer layer for lattice matching (marked with black dot) . . . Buffer layer containing component elements of growth crystal (marked with black dot) . . Alternate multilayer lamination of two or more films . . . Superlattices
EG EG00
CRYSTAL GROWTH IN COMMON 7, E.G. APPARATUS OR TOOLS 		EG01 EG02 EG03 EG04 EG05 EG06 EG07 EG08 EG09 EG10
. Melt support or housing means e.g. crucibles (EG05 takes precedence) . . Characteristics of materials or multilayered or coated structures . Substrate support means. EG05 takes precedence . . Characteristics of materials or multilayered or coated structures . Melts or substrate support bodies for liquid phase epitaxy . . for multilayer growth . . Feeding or outletting of melts onto substrate surfaces . . . Structures for removing residual solutions . . . Circulating melts between reservoir and substrate . . . Structures for sliding substrates or melt reservoirs
EG11 EG12 EG13 EG14 EG15 EG16 EG17 EG18 EG19 EG20
. Holding or fixing means for seed crystals . Means for pulling up or down or rotating seed crystal . Structures for transferring carrying in or out substrates or support bodies . Movements e.g. rotations or vibrations of substrates or support bodies during growth . Heating cooling or insulating apparatus . . for substrates or substrate support bodies . . . for cooling substrates . . for vessels crucibles or boats . . for heat retention e.g. insulating plates heat reflecting or radiating plates . . for growth crystals
EG21 EG22 EG23 EG24 EG25 EG26 EG27 EG28 EG29 EG30
. Structures of devices for feeding outletting or treating gases . . for gas feeding . . . Nozzles . . . for controlling gas flows e.g. baffle plates . Shapes structures or materials of members constituting growth chambers or furnaces . Structures of chambers attached to growth chambers e.g. substrate pretreatment chambers . Devices for handling furnaces growth chambers or growth crystals . . Maintenance inspection e.g. cleaning or disassembling . Structures of devices for continuous growth or manufacture . Others
EH EH00
CRYSTAL GROWTH IN COMMON 8, E.G. DETECTION OR CONTROL 		EH01 EH02 EH03 EH04 EH05 EH06 EH07 EH08 EH09 EH10
. Detection or control of thickness of growth films . Detection or control of evaporation quantity molecular beam quantity from evaporation sources . . Use of shutters or masks . Detection or control of crystal diameter . Detection or control of doping quantity . Control methods . . Control of temperature of or temperature distribution of melts . . Control of number of revolutions of crucibles or seed crystals . . Control of pulling speed or growth rate . Others
EJ EJ00
CRYSTAL GROWTH IN COMMON 9, E.G. ADDITION OF SPECIFIC GROWTH ENVIRONMENTS 		EJ01 EJ02 EJ03 EJ04 EJ05 EJ06 EJ07 EJ08 EJ09 EJ10
. Electric fields . Magnetic fields . Irradiation with energy beams . . Light . adding vibrations . Floating crystal materials e.g. under zero gravity . Use of sealants or sealing agents for preventing evaporation or the like . . Selection of sealants . Addition of growth reaction accelerators e.g. catalysts . Others
FA FA00
AFTER-TREATMENT 1, E.G. DIFFUSION SOURCES OR ARRANGEMENTS THEREOF 		FA01 FA02 FA03 FA04 FA05 FA06 FA07 FA08 FA09 FA10
. characterised by compositions shapes of diffusion sources . . Diffusion sources in liquid suspension form compositions thereof . . Solid form or compositions thereof . . . Shaped bodies plate-like bodies sintered bodies or compositions thereof . . . . by attaching diffusion sources onto substrate . by making solid diffusion source contact with substrate (FB01 takes precedence) . . by embedding substrate in powder of solid diffusion source . by making liquid diffusion source contact with substrate . by arranging plate-like solid diffusion source and substrate in parallel . Others
FB FB00
AFTER-TREATMENT 2, E.G. A PRETREATMENT OF SUBSTRATE SURFACES FOR AFTER-TREATMENTS 		FB01 FB02 FB03 FB04 FB05 FB06 FB07 FB10
. Formation of diffusion material layer on substrate surfaces (FC04 takes precedence) . . coating with liquids or suspension solutions . . by forming impurity doped layer . . by locally forming a layer of diffusion materials . cleaning etching or polishing (see also FG) . formation of film on substrate surfaces (FC04 takes precedence) . . Mask formation for local doping . Others
FC FC00
AFTER-TREATMENT 3, E.G. DOPING FROM VAPOUR PHASE 		FC01 FC03 FC04 FC05 FC06 FC07 FC10
. Doping in sealed tubes . without using sealed tubes . . including depositing process of diffusion source onto substrate surfaces . . Adjustment or control of ambient atmosphere or gas flow . . . Feeding outletting or treatments of doping gas . . . Detection or control of concentration or doping amount of doping gas . Others
FD FD00
AFTER-TREATMENT 4, E.G. DOPING BY IRRADIATION OF ELECTROMAGNETIC WAVES, OR PARTICLE BEAMS 		FD01 FD02 FD03 FD04 FD05 FD06 FD10
. by neutron irradiation . by ion implantation . . Ion implantation methods ion generating or accelerating devices . . . by local implantation . . . Detection or control of implantation amount . . . Selection or control of implanting angle . Others
FE FE00
AFTER-TREATMENT 5, E.G. HEATING OR COOLING TREATMENTS 		FE01 FE02 FE03 FE04 FE05 FE06 FE07 FE08 FE09 FE10
. in sealed tubes . characterised by ambience e.g. pressure ambient gas . . containing oxygen . . . forming oxide film on substrate surfaces . . reducing atmosphere . . containing vapour of components constituting crystal . Heat treatment by coating substrate with another material . . by embedding in powder . by immersing substrate in liquids e.g. in gallium melt . during application of pressure or stress e.g. hot pressing
FE11 FE12 FE13 FE14 FE15 FE16 FE17 FE18 FE19 FE20
. Heating or cooling conditions . . Multistage heating . . Cooling rate or cooling duration . characterised by heating means . . by energy beam irradiation . . . Light irradiation . Heating or cooling treatments of crystals in ingot form . . performing in situ following crystal growth . for crystallisation single-crystallisation of film on substrates . Others
FF FF00
AFTER-TREATMENT 6, E.G. JOINING OF CRYSTALS 		FF01 FF02 FF03 FF06 FF07 FF10
. using binding agents . . using metals or alloys as binding agents . . using glass as binding agent . without binding agent . . by using only heating and/or pressing . Others
FG FG00
AFTER-TREATMENT 7, E.G. ETCHING OR MACHINING 		FG01 FG02 FG03 FG04 FG05 FG06 FG07 FG08 FG09
. Etching in gas phase . . by ion irradiation plasma electric discharge or sputtering . . by chemical etching (additional classification in FH for light irradiation) . . Feeding or outletting to/from substrate surfaces of or the treatments of etching gas . Etching in liquid phase . . Composition of etching solution . . . containing abrasive particles . . applying electric field e.g. electrolytic etching . . Feeding or outletting of etching solution to/from substrate surface and treatments of etching solution
FG11 FG12 FG13 FG14 FG16 FG17 FG18 FG20
. Mechanical surface roughening grinding polishing or cutting . . Grinding materials polishing agents or cutting materials . . Disconnecting methods or segmenting methods . . . by cleavage . Setting or control of orientation or angle of crystal plane at processing . Control of etching amount or working amount . Local etching grinding or polishing . Others
FH FH00
AFTER-TREATMENT 8, E.G. USE OF ELECTRIC FIELDS, MAGNETIC FIELDS, OR ENERGY BEAMS 		FH01 FH02 FH03 FH04 FH05 FH06 FH07 FH08 FH09 FH10
. under voltage application in electric field (FH 09 takes precedence) . . for single domaining of dielectric materials . . . characterised by filler between electrodes and crystal . in magnetic field under application of magnetic field . Irradiation of energy beams . . Neutron beams . . Electron beams . . Light . by electric discharge plasma . Others
FJ FJ00
AFTER-TREATMENT 9 FOR OTHERS 		FJ01 FJ02 FJ03 FJ04 FJ05 FJ06 FJ07 FJ08 FJ10
. Cleaning of crystal surface or refining of crystals . Applying mechanical stress (see FE10 for hot processes) . Separation of growth substrate and growth crystal film e.g. removal by dissolving . Separation of growth fibres whiskers from growth substrate or base material . Crushing or sorting of aggregates of whiskers or fibres . Film formation on growth crystal surface . . Metal films . Handling of crystals after growth e.g. transfer . Others
FK FK00
AFTER-TREATMENT 10, E.G. FEATURES OF APPARATUS OR TOOLS 		FK01 FK02 FK03 FK04 FK05 FK06 FK07 FK08
. Shapes or structures of reaction tubes soaking tubes or sealed tubes . Shapes or structures of substrate support bodies . . setting substrate surface parallel to gas flow direction . . making substrate surface perpendicular to gas flow . Tools for adjusting ambient atmosphere or gas flow . . Use of pseudowafers or dummy substrates . Devices or tools for heating or cooling . . Heating or cooling of substrates
FK11 FK12 FK13 FK14 FK15 FK16 FK18 FK20
. Structures of devices or tools for carrying in or out substrates . Structures of devices for continuous treatments of substrate . Structures of apparatus for feeding outletting of gas flow . . Feeding or outletting nozzles . . Vaporisers . Structures for moving substrates during treatments e.g. rotating . characterised by materials of devices or tools . Others
GA GA00
EVALUATION OR DETERMINATION OF PHYSICAL OR CHEMICAL PROPERTIES OF CRYSTALS 		GA01 GA02 GA03 GA05 GA06 GA07 GA08 GA10
. of concentration or concentration distribution of impurities . of dislocation density . of crystallographic orientation . Techniques of evaluation or determination . . optical . . electrical . . magnetic . Others
HA HA00
USES 		HA01 HA02 HA03 HA04 HA05 HA06 HA07 HA08 HA09 HA10
. Optical materials . . Light emitting materials e.g. laser elements . Magnetic materials . Acoustic materials e.g. microwave elements diaphragms . Electrical materials . . Semiconductor elements . . Ion conducting materials . . Superconducting materials . . . Wires or coil materials . . . Josephson elements
HA11 HA12 HA13 HA14 HA15 HA20
. Piezoelectric materials or dielectric materials . Substrate materials e.g. for semiconductors magnetic materials or superconductors . Tool materials wear resistant or polishing materials . Heat radiating materials or heat sinks . Electron emitting materials . Others
C30B1/00-1/12 JA JA00
SINGLE CRYSTAL GROWTH DIRECTLY FROM THE SOLID PHASE 		JA01 JA02 JA03 JA05 JA06 JA08
. Qualities or shapes of materials prior to growth . . Single crystals prior to growth e.g. using seeds * . . . using substrates * . . Polycrystals prior to growth * . . . formation of polycrystalline bodies . . Joining of single crystals and polycrystals prior to growth
JB JB00
SINGLE CRYSTAL GROWTH PROCESSES OR APPARATUS 		JB01 JB02 JB04 JB06 JB07 JB08 JB09
. Growth processes or apparatus . . Ambient gases * . . Pressure treatments (C30B1/12) . . Heating conditions at recrystallisation e.g. multistage heating . . . under isothermal conditions (C30B1/04) . . . under temperature gradient (C30B1/06) . . . under zone heating (C30B1/08)
JB12
. . Solid phase reactions or multi-phase diffusion (C30B1/10)
C30B7/10 KA KA00
APPLICATION OF PRESSURE, E.G. HYDROTHERMAL PROCESS 		KA01 KA03 KA05 KA06 KA07 KA09
. Raw materials * . Solvents * . Seed crystals * . . Preliminary treatments * . . Crystallographic orientations . Growth conditions e.g. temperatures pressures
KA11 KA12 KA13 KA15
. Apparatus e.g. shapes or structures thereof . . Materials quality * . . Holder of seed crystals . Others
C30B9/12 LA LA00
USING SALT SOLVENTS, E.G. FLUX GROWTH 		LA01 LA03 LA05
. Flux * . Apparatus or structures shapes or materials thereof . Growth conditions
C30B11/00@C MA MA00
CRUCIBLES OR VESSELS OR SUPPORT BODIES THEREOF 		MA01 MA02 MA04 MA05
. Crucibles or vessels e.g. shapes or structures thereof . . Materials * . Support bodies of crucibles or vessels e.g. shapes or structures thereof . . Materials *
C30B11/00;11/00@Z;11/04;11/06 MB MB00
NORMAL FREEZING OR GRADIENT FREEZING 		MB01 MB02 MB03 MB04 MB06 MB07 MB08
. Growth methods . . Bridgman method . . . Lateral type . . . Longitudinal type . . Gradient freezing method . . . Lateral type . . . Longitudinal type
MB12 MB14
. . Solute synthesis diffusion method or SSD method . . Others or normal freezing
MB21 MB22 MB23 MB24 MB26
. Growth apparatus . . Heating means e.g. furnace structures or the like . . . Multiple heating means e.g. auxiliary heating . . . Heat retaining materials . . Cooling means or cooling members
MB31 MB32 MB33 MB35 MB36
. Growth conditions . . Controlling or adjusting . . . Control of temperature . . . Ambient atmosphere * . . . Vapour pressure of volatile components
C30B13/00 NA NA00
SINGLE-CRYSTAL GROWTH OR REFINING BY ZONE-MELTING 		NA01 NA03 NA05
. Ambient atmospheres * . After heater . Others
C30B13/02 NB NB00
USING SOLVENTS 		NB01 NB03
. Solvents * . Others e.g. processes or apparatus
C30B13/14 NC NC00
CRUCIBLES OR VESSELS OR SUPPORT BODIES THEREOF 		NC01 NC02 NC03 NC05
. Crucibles or vessels e.g. shapes . . Multilayer structures or coatings . . Materials * . Support bodies for crucibles or vessels *
C30B13/20 ND ND00
HEATING OF MOLTEN ZONES BY INDUCTION 		ND01 ND02 ND03 ND05 ND07
. Single induction coil e.g. shapes thereof . . Arrangements . . Structures . This place covers the subject matter for using plural induction coils. . Electric power feeding
C30B13/24 NE NE00
HEATING BY ELECTROMAGNETIC WAVES, E.G. HEATING BY CONDENSED LIGHT 		NE01 NE03 NE04 NE05 NE06 NE07 NE09
. Electromagnetic wave sources . using ellipsoid of revolution mirrors . . Shapes or structures . . Plural ellipsoid of revolution mirrors . . Connection of ellipsoid of revolution mirror and other parts . . Attached equipment . Others
C30B13/28 NF NF00
CONTROLLING OR ADJUSTING 		NF01 NF02 NF03 NF05 NF07 NF08 NF09
. Diameter control . . Detection methods . . . Optical detection . . Control operations . . Controlled variables or output signals . . . Heating amount . . . Moving speed
NF11
. Others
C30B13/32 NG NG00
MOVING MECHANISMS OR HOLDERS OF MATERIALS OR HEATERS 		NG01 NG03 NG05
. Moving or rotating mechanisms of materials or heaters . Holders or holding mechanisms of materials or crystals . Others
C30B15/00;15/00@Z;27/02 PA PA00
PULLING FROM MELTS, INCLUDING UNDER PROTECTIVE FLUIDS 		PA01 PA03 PA04 PA06 PA08 PA10
. Necking . Ambient gases e.g. types thereof * . . Adjustment of gas flows . Control of oxygen concentration in melts or crystals . Means for stirring or causing forced convection in melts . Cooling of pulled crystals
PA11 PA13 PA14 PA16
. Removing of residuals . Sealing agents or encapsulating agents . . having B2O3 as main component . Others
C30B15/02;15/04;27/02 PB PB00
FILLING OR ADDING OF CRYSTALLISING MATERIALS, RAW MATERIALS, OR REACTION AGENTS 		PB01 PB02 PB04 PB05 PB07 PB08 PB09 PB10
. Timing for filling or addition e.g. before crystal growth . . during crystal growth . Materials of fillings or additives e.g. excluding impurities * . . containing impurities * . State of fillings or additives e.g. gaseous . . Liquids . . Solids . . . Coating bodies
PB11 PB13 PB14 PB16
. Devices . Process of filling or adding . . Adjustment or control of adding amounts . Others
C30B15/06;15/08;27/02 PC PC00
CHARACTERISED BY PULLING DIRECTIONS 		PC01 PC02
. nonvertical pulling . downward pulling
C30B15/10;15/12;27/02 PD PD00
CRUCIBLES OR VESSELS FOR HOUSING MELTS OR SUPPORTING BODIES THEREOF 		PD01 PD02 PD03 PD05 PD06 PD08
. Crucibles or vessels e.g. materials thereof * . . Shapes or structures . . . Sub crucibles for adding raw materials or having partitions . . . Multilayered structures or coatings . . . . Sealing agents for forming part of vessels . . . Duplex crucibles
PD11 PD12 PD15 PD16
. Members for supporting crucibles or vessels e.g. materials * . . Shapes or structures . . . Multilayered structures or coatings . . . Combination of multiple members
C30B15/14-15/18;27/02 PE PE00
HEATING OF MELTS, SEALING AGENTS, OR CRYSTALLISED MATERIALS 		PE01 PE02 PE03 PE04 PE05 PE07 PE08
. Heating of melts or sealing agents . . Kinds of heating bodies . . . Resistive heating . . . High frequency heating . . . Irradiation or electric discharge (C30B15/16) . . comprising multiple heating means or members . . . Other heating method in addition to direct resistive heating
PE12 PE14 PE16
. . Shapes structures or arrangements of heating bodies . . Materials of heating bodies * . . Adjustment of heat conduction between heating bodies and melts
PE21 PE22 PE24 PE27
. Heating of crystallised materials e.g. after heater . . Shapes structures or arrangements of heating bodies or insulating bodies . . Materials of heating bodies or insulating bodies * . Others or mechanisms attendant on heating
C30B15/20-15/28;27/02 PF PF00
CONTROLLING OR ADJUSTING 		PF01 PF02 PF03 PF04 PF05 PF07 PF08 PF09
. Stabilisation of molten zones control of crystal cross-sections . . using televisions lights or X rays e.g. windows . . . Detection methods or means . . . . detecting light . . . . detecting X rays . . . Detected objects . . . . Crystals . . . . Melt surface
PF13 PF15 PF16 PF17
. . . Control operations . . . Controlled variables or output signals . . . . Melt temperatures or sealing agent temperatures . . . . Pulling speed including movement of crucibles
PF22 PF23 PF24 PF25 PF27 PF28 PF29
. . using weight changes in crystals or melts . . . Detection methods e.g. weight measurement . . . . Pulling crystals . . . . Melts in crucibles including sealing agents . . . Control operations . . . . comparing weight as is with set value . . . . comparing weight with set value after conversion to diameter
PF33 PF34 PF35 PF37
. . . Controlled variables or output signals . . . . Melt temperatures sealant temperatures . . . . Pulling speeds including movement of crucibles . . . using floats
PF42 PF43 PF45 PF47
. . Suppression of convection in melts or sealing agents . . . Use of baffle plates . . Cooling of melts sealing agents or surface thereof . . Shaping guides (C30B15/24)
PF51 PF52 PF53 PF55
. Others . . Detection methods . . . Temperature measuring . . Control operations
C30B15/30;27/02 PG PG00
ROTATION OR MOVEMENT MECHANISMS OF MELTS, SEALING AGENTS, OR CRYSTALS 		PG01 PG03
. Rotation or movement of crystals . Rotation or movement of melts or sealing agents
C30B15/32;27/02 PH PH00
SEED CRYSTAL HOLDERS 		PH01 PH03
. Structures of seed crystal holding parts . Others
C30B15/36;27/02 PJ PJ00
SEED CRYSTALS 		PJ01 PJ02 PJ04
. Seed crystals e.g. materials thereof * . . Crystallographic orientations . . Shapes of crystals
C30B15/34;27/02 PK PK00
EDGE-DEFINED FILM CRYSTAL GROWTH 		PK01 PK03 PK04 PK05 PK06 PK07 PK08
. Pulling mechanisms others . Edge defining mechanisms e.g. defining width direction . . Use of dies e.g. heating of dies . . . Shapes or structures of dies . . . . Coatings or joining with other articles . . . Materials * . . . Support of dies
C30B19/00-19/12 QA QA00
LIQUID PHASE EPITAXY 		QA01 QA02 QA04 QA06
. Kinds of liquid phase epitaxial method . . Sliding boat method . . Dipping method . . Inclination method
QA11 QA12
. using solvents (C30B19/02; 19/04) . . characterised by solvents *
QA21 QA22 QA23 QA24 QA26 QA27 QA28 QA29
. Growth process . . Handling of substrates before growth . . . Adjustment of substrate holding ambient atmosphere . . . Processes for melting back substrates . . Adjustment of melt composition . . . adding impurities . . . removing impurities . . . Homogenisation of melt concentration e.g. stirring
QA32 QA34 QA36 QA38
. . using dummy substrates . . Adjustment of ambient atmosphere during growth . . varying crystal composition during growth . . Adjustment or control of temperature conditions e.g. heating or cooling
QA42 QA43 QA45
. . Adjustment or control of film thickness . . . using masks on substrates . . washing growth crystal surfaces
QA51 QA52 QA54 QA56 QA58
. Apparatuses . . Materials of reaction chambers melt support fixtures or substrate support bodies * . . Holding means of substrates including rotating or moving . . Heating means of reaction chambers or substrates . . Means for feeding melts to or outletting melts from a reaction chamber
QA62 QA64 QA66 QA68 QA70
. . Structures of melt supporting means e.g. boat . . Cleaning means of melt surfaces making contact with substrates . . Sliding or moving means of substrates or melts . . Holding substrates and melts in multistage in the vertical direction . . Removing means of residual melts
QA71 QA72 QA73 QA74 QA75 QA77 QA79
. Substrates e.g. material (C30B19/12) * . . Pretreated substrates . . . Chemical treatments e.g. etching . . . . Coating . . . . Doping . . . Mechanical treatments e.g. shapes of substrate . . Substrate crystal orientation
QA81
. Others
C30B1/00-27/02 RA RA00
SINGLE CRYSTAL GROWTH UNDER SPECIAL PHYSICAL CONDITIONS 		RA01 RA03 RA05 RA07 RA09
. Electric field e.g. electrolysis or the like . Magnetic field . Mechanical vibrations . under conditions of zero gravity or low gravity . Others
C30B23/00;23/02 SA SA00
PVD 		SA01 SA02 SA03 SA04 SA06 SA07 SA08
. Shapes of growth crystal e.g. lump-shaped . . Powders particles or whiskers . . Growth on bars e.g. bar-shaped or film-shaped . . Growth on substrates . Growth processes . . Specification of growth conditions e.g. temperature or pressure . . Control
SA11 SA12
. Growth apparatus . . Base body holders or susceptors
C30B23/08;23/08@Z SB SB00
CONDENSATION OF IONISED VAPOURS 		SB01 SB02 SB03 SB05 SB06 SB07 SB09 SB10
. Sputtering . . Ion beam sputtering . . specifying the target . Ion plating . . Ion beam vapour deposition . . Cluster ion beam vapour deposition . Particle beam epitaxial growth method . Others
C30B23/08@M SC SC00
MOLECULAR BEAM EPITAXY 		SC01 SC02 SC03 SC05 SC06 SC08 SC10
. Growth processes . . Growth conditions e.g. under specific growth conditions . . . varying growth conditions . . Controls . . . Controls on molecular beam quantity . . Cleaning of substrate surface e.g. etching . . using masks
SC11 SC12 SC13 SC14
. Growth apparatus . . Molecular beam sources . . using shutters . . Heating mechanisms of substrates
C30B25/00 TA TA00
CVD 		TA01 TA02 TA03 TA04 TA06 TA07 TA08
. Shapes of grown crystals e.g. lump-shaped . . Powders particles or whiskers . . Growth on bars e.g. bar-like or film-like . . Growth on substrates . Growth processes . . Specification of growth conditions e.g. temperature or pressure . . Controls
TA11 TA12
. Growth apparatus . . Base body holders or susceptors
C30B25/02;25/02@Z TB TB00
EPITAXIAL GROWTH METHOD, APPARATUS 		TB01 TB02 TB03 TB04 TB05 TB07 TB08
. Growth method or apparatus . . Hydride method . . Halide method . . . Chloride method . . Metal organic vapour phase epitaxy . . using energy source other than heat . . . using light energy
TB12 TB13
. . Method for closed tube or sealed tube . . Method for opened tube
TC TC00
MANUFACTURING PROCESSES 		TC01 TC02 TC03 TC04 TC05 TC06 TC07 TC08 TC09 TC10
. Raw material gas medium or ambient atmosphere . . Raw material gas containing impurities . . Ambient atmospheres . . Media . Specification of growth or the reaction conditions . . Substrate temperatures . . Temperatures of raw material gas generating units . . Pressures . . Gas flow speeds . . Growth rates
TC11 TC12 TC13 TC14 TC15 TC16 TC17 TC19
. comprising plural processes . . Multiple growth processes . . . Two layers . . . Three or more layers . . . Accompanying movement of substrates . . including processes other than growth process . . . including etching process . related to semiconductor elements e.g. P-N junction
C30B25/08 TD TD00
REACTION CHAMBERS 		TD01 TD02 TD03 TD04 TD05 TD06 TD07 TD08 TD09
. Materials . Shapes or outer shapes or structures . . being coated . . Multiplex structures e.g. double structure . . . using protective tubes e.g. liner tubes . . Shapes of raw material feeding unit . . comprising plural reaction chambers . . Details e.g. connection mechanisms . having spare chambers
C30B25/10 TE TE00
HEATING OF REACTION CHAMBERS OR SUBSTRATES 		TE01 TE02 TE03 TE05 TE07 TE08 TE10
. Heating methods . . High frequency heating . . Resistive heating . Shapes structures or arrangements of heating bodies . Intermediate heating bodies e.g. materials thereof . . Shapes structures or arrangements . forming plural temperature regions in furnace
C30B25/12 TF TF00
SUBSTRATE HOLDERS OR SUSCEPTORS 		TF01 TF02 TF03 TF04 TF05 TF06
. Materials . Shapes or structures . . Coated bodies . . Substrate holding mechanisms . Arrangements . Movement or rotation mechanisms of substrates
C30B25/14 TG TG00
RELATIONSHIP BETWEEN SUBSTRATES AND GAS FLOW 		TG01 TG02 TG03 TG04 TG06 TG07
. Arrangements of substrate and gas flow directions . . Lateral type e.g. gas flow perpendicular to substrate . . . Gas flow parallel to substrate . . . . Horizontal substrates . . Longitudinal type e.g. gas flow perpendicular to horizontal substrate . . . Gas flow parallel to horizontal substrate
TG12 TG13 TG14 TG15
. . Cylindrical type e.g. perpendicular to substrate from furnace wall side . . . Gas flow parallel to substrate on furnace wall side . . . Gas flow perpendicular to substrate from centre side of furnace . . . Gas flow parallel to substrate on centre side of furnace
TH TH00
FEEDING OR OUTLETTING MEANS OF GAS; ADJUSTMENT OF REACTION GAS FLOW 		TH01 TH02 TH03 TH05 TH06 TH07 TH08 TH09 TH10
. Raw material gas generating unit . . Bubblers or vaporisers . . . Gas generating unit being provided in gas spout . Method for flowing gas . . Feeding or outletting devices . . changing flow direction of raw material gas e.g. reversal of flow direction . . . Spout being movable . . Stirring of gas . . Shapes or structures of reaction chamber for obtaining uniform flow
TH11 TH13
. Gas blowing unit or spout . Others
C30B25/16 TJ TJ00
CONTROLLING OR ADJUSTING 		TJ01 TJ02 TJ03 TJ04 TJ05 TJ06 TJ07
. Control of growth conditions . . Control of growth rate or film thickness control . . Temperature control . . Pressure control . . Composition control or controls of raw material evaporation amount . . . Control of impurity concentrations . . Control using dummy substrates
TJ11 TJ12 TJ13 TJ14 TJ15 TJ16 TJ18
. Measuring or observing of growth conditions . . Film thickness measuring . . Temperature measuring . . Pressure measuring . . Gas composition measuring . . Observing of crystal during growth . Others e.g. safety device
C30B25/18-25/22 TK TK00
SUBSTRATE 		TK01 TK02 TK04 TK06 TK08 TK10
. Materials . . containing impurities . Shapes e.g. irregularity chamfering or roughened surface . Crystallographic orientation . having surface layer . Cleaning of substrate surface e.g. etching
TK11 TK13
. Removable substrate . Others
UA UA00
SINGLE CRYSTAL GROWTH UNDER SPECIAL PHYSICAL CONDITIONS 		UA01 UA03 UA05 UA07 UA09
. Electric field e.g. electrolysis . Magnetic field . Mechanical vibrations . under conditions of zero gravity or low gravity . Others
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