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This page displays all 「FI」 in main group C30B33/00. |
HB:Handbook | ||||
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CC:Concordance | |||||
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After-treatment of single crystals or homogeneous polycrystalline material with defined structure (C30B 31/00takes precedence) [3,5] | HB | CC | 4G077 | |
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.Heat treatment (C30B 33/04, C30B 33/06 take precedence) [5] | HB | CC | 4G077 | |
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.using electric or magnetic fields or particle radiation [5] | HB | CC | 4G077 | |
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.Joining of crystals [5] | HB | CC | 4G077 | |
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.Etching [5] | HB | CC | 4G077 | |
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..in solutions or melts [5] | HB | CC | 4G077 | |
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..in gas atmosphere or plasma [5] | HB | CC | 4G077 | |