FI (list display)

  • C30B13/00
  • Single-crystal growth by zone-melting; Refining by zone-melting (C30B 17/00 takes precedence; by changing the cross-section of the treated solid C30B 15/00; under a protective fluid C30B 27/00; for the growth of homogeneous polycrystalline material with defined structure C30B 28/00) [2006.01] HB CC 4G077
  • C30B13/02
  • .Zone-melting with a solvent, e.g. travelling solvent process [3] HB CC 4G077
  • C30B13/04
  • .Homogenisation by zone-levelling [3] HB CC 4G077
  • C30B13/06
  • .the molten zone not extending over the whole cross-section [3] HB CC 4G077
  • C30B13/08
  • .adding crystallising materials or reactants forming it in situ to the molten zone [3] HB CC 4G077
  • C30B13/10
  • ..with addition of doping materials [3] HB CC 4G077
  • C30B13/12
  • ...in the gaseous or vapour state [3] HB CC 4G077
  • C30B13/14
  • .Crucibles or vessels [3] HB CC 4G077
  • C30B13/16
  • .Heating of the molten zone [3] HB CC 4G077
  • C30B13/18
  • ..the heating element being in contact with, or immersed in, the molten zone [3] HB CC 4G077
  • C30B13/20
  • ..by induction, e.g. hot wire technique (C30B 13/18takes precedence) [3] HB CC 4G077
  • C30B13/22
  • ..by irradiation or electric discharge [3] HB CC 4G077
  • C30B13/24
  • ...using electromagnetic waves [3] HB CC 4G077
  • C30B13/26
  • .Stirring of the molten zone [3] HB CC 4G077
  • C30B13/28
  • .Controlling or regulating [3] HB CC 4G077
  • C30B13/30
  • ..Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal [3] HB CC 4G077
  • C30B13/32
  • .Mechanisms for moving either the charge or the heater [3] HB CC 4G077
  • C30B13/34
  • .characterised by the seed, e.g. by its crystallographic orientation [3] HB CC 4G077
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