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This page displays all 「FI」 in main group C30B31/00. |
HB:Handbook | ||||
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CC:Concordance | |||||
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Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor [3,5] | HB | CC | 4G077 | |
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.by contacting with diffusion materials in the solid state [3] | HB | CC | 4G077 | |
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.by contacting with diffusion materials in the liquid state [3] | HB | CC | 4G077 | |
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. by contacting with diffusion material in the gaseous state | HB | CC | 4G077 | |
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..the diffusion materials being a compound of the elements to be diffused [3] | HB | CC | 4G077 | |
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..Reaction chambers; Selection of materials therefor [3] | HB | CC | 4G077 | |
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..Heating of the reaction chamber [3] | HB | CC | 4G077 | |
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..Substrate holders or susceptors [3] | HB | CC | 4G077 | |
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..Feed and outlet means for the gases; Modifying the flow of the gases [3] | HB | CC | 4G077 | |
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..Controlling or regulating [3] | HB | CC | 4G077 | |
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.Doping by irradiation with electromagnetic waves or by particle radiation [3] | HB | CC | 4G077 | |
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..by ion-implantation [3] | HB | CC | 4G077 | |