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This page displays all 「FI」 in main group C30B29/00. |
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CC:Concordance | |||||
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Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape | HB | CC | 4G077 | |
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.Elements [3] | HB | CC | 4G077 | |
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..Diamond [3] | HB | CC | 4G077 | |
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Making diamond film by gas state method (particle coating R T) | HB | CC | 4G077 | |
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.Generating plasma (other than C to F, or with no specified means of generation) | HB | CC | 4G077 | |
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..By DC discharge plasma | HB | CC | 4G077 | |
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..By high frequency plasma | HB | CC | 4G077 | |
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..By microwave plasma | HB | CC | 4G077 | |
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..By cyclotron resonance plasma | HB | CC | 4G077 | |
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.Activating material gas by heating body, e.g. heat filament, heating substrate (including atmospheric heating) | HB | CC | 4G077 | |
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.Activating material gas by combustion flame | HB | CC | 4G077 | |
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.Activating material gas by thermal electronic irradiation | HB | CC | 4G077 | |
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.Activating material gas by light irradiation | HB | CC | 4G077 | |
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.Activating material gas by ion beam irradiation | HB | CC | 4G077 | |
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.By vacuum evaporation, sputtering | HB | CC | 4G077 | |
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.With no specified diaphragm forming means as in B to M | HB | CC | 4G077 | |
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..Characterized by substrate materials | HB | CC | 4G077 | |
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..Characterized by treatment of substrate, e.g. surface treatment, formation of intermediate layer) | HB | CC | 4G077 | |
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..Characterized by composition of material gas | HB | CC | 4G077 | |
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Manufacture of diamond in shapes, e.g. particles, other than film using gas state method | HB | CC | 4G077 | |
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Coating other material particles for diamonds using gas state method | HB | CC | 4G077 | |
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Manufacture of diamond not using gas state method | HB | CC | 4G077 | |
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Treatment of diamond crystals | HB | CC | 4G077 | |
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Articles comprised of or containing diamonds | HB | CC | 4G077 | |
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.Articles with gas state method diamond coating on substrate surface | HB | CC | 4G077 | |
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Others | HB | CC | 4G077 | |
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..Silicon [3] | HB | CC | 4G077 | |
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Characterized by crystal per se, e.g. concentration of impurities, physical properties, determination of crystal direction | HB | CC | 4G077 | |
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After-treatment of crystals | HB | CC | 4G077 | |
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Articles using Si crystals | HB | CC | 4G077 | |
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Manufacture of Si materials for crystal growth, e.g. manufacture of high-purity polycrystalline silicon rod | HB | CC | 4G077 | |
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Others | HB | CC | 4G077 | |
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...Growth from liquid phase | HB | CC | 4G077 | |
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Growth by zone melting | HB | CC | 4G077 | |
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Liquid phase epitaxitial growth | HB | CC | 4G077 | |
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Others | HB | CC | 4G077 | |
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....By pull-up method | HB | CC | 4G077 | |
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Supply of material powder, formation of a melt | HB | CC | 4G077 | |
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Melting pots (including jigs used by being part of, or being sticking together with melting pot) | HB | CC | 4G077 | |
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Jigs used inside pull-up furnaces, e.g. heat shield plates, heat-retention tubes etc. (E takes precedence) | HB | CC | 4G077 | |
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.Placed inside a melt (E takes precedence) | HB | CC | 4G077 | |
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Characterized by heating, cooling means | HB | CC | 4G077 | |
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Characterized by the seed and see crystal retention, pull-up devices | HB | CC | 4G077 | |
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Using magnetic field | HB | CC | 4G077 | |
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Controlling the volume of impurities, inevitable impurities | HB | CC | 4G077 | |
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Control of pull-up speed, rotating speed (H takes precedence) | HB | CC | 4G077 | |
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Adjustment of atmosphere inside pull-up furnace (supply, discharge, pressure adjustment of atmospheric gas) | HB | CC | 4G077 | |
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Others | HB | CC | 4G077 | |
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...Pulling up plate, strip silicon from a melt | HB | CC | 4G077 | |
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...Growth from gas state | HB | CC | 4G077 | |
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Growth to film on substrate | HB | CC | 4G077 | |
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.Characterized by selection of material gas, composition | HB | CC | 4G077 | |
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.Characterized by supply/discharge, flow of material gas, | HB | CC | 4G077 | |
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.Characterized by heating, cooling means, methods of substrate | HB | CC | 4G077 | |
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.Characterized by selection of substrate materials (F takes precedence) | HB | CC | 4G077 | |
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.Treatment of substrates (J takes precedence); Forming film of Si and above on substrate that later grows into Si film, e.g. formation of buffer film | HB | CC | 4G077 | |
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.Growing Si film in two or more processes | HB | CC | 4G077 | |
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.Growing Si film on time constant area of substrate (J takes precedence) | HB | CC | 4G077 | |
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.Growing on seed crystal of substrate | HB | CC | 4G077 | |
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.Applying treatment on Si film formed on substrate, e.g. single crystallisation of noncrystalline Si film, doping | HB | CC | 4G077 | |
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.Characterized by devices, jigs for gas state growth, e.g. substrate support, bell jar, C to K Take precedence | HB | CC | 4G077 | |
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Others | HB | CC | 4G077 | |
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..Germanium [3] | HB | CC | 4G077 | |
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.Inorganic compounds or compositions [3] | HB | CC | 4G077 | |
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..Halides [3] | HB | CC | 4G077 | |
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..Phosphates [3] | HB | CC | 4G077 | |
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..Oxides [3] | HB | CC | 4G077 | |
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...Quartz [3] | HB | CC | 4G077 | |
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...Aluminium oxides [3] | HB | CC | 4G077 | |
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...Complex oxides [3] | HB | CC | 4G077 | |
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Containing Al (Apply right place rule for A to F) | HB | CC | 4G077 | |
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.BeAl2O4 (chrysoberyl, alexandrite) | HB | CC | 4G077 | |
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Containing | HB | CC | 4G077 | |
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Containing | HB | CC | 4G077 | |
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Ferrite | HB | CC | 4G077 | |
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.Containing Mn and Zn | HB | CC | 4G077 | |
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Others | HB | CC | 4G077 | |
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....Superconducting materials | HB | CC | 4G077 | |
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Growth from solid state | HB | CC | 4G077 | |
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Growth from liquid state | HB | CC | 4G077 | |
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.Forming superconducting layer on substrate | HB | CC | 4G077 | |
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Growth by gas state method | HB | CC | 4G077 | |
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.Forming superconducting layer on substrate | HB | CC | 4G077 | |
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..By sputtering (J to N take precedence) | HB | CC | 4G077 | |
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..Characterized by selection of substrate | HB | CC | 4G077 | |
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..Treatment of substrates, forming intermediate layer between substrate and superconducting layer | HB | CC | 4G077 | |
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..Applying treatment on superconducting layer after making of film, e.g. heat treatment, ion injection treatment etc. | HB | CC | 4G077 | |
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..Forming superconducting layer on multiple layers or forming layer of other materials on the surface of superconducting layer | HB | CC | 4G077 | |
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Characterized by the purpose of articles using superconducting materials, e.g. semiconductor devices, semiconductor substrates, wires | HB | CC | 4G077 | |
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Characterized by after-treatment of superconducting crystals (L takes precedence) | HB | CC | 4G077 | |
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Others | HB | CC | 4G077 | |
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....with formula AMeO3, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co, or Al, e.g. ortho ferrites [3] | HB | CC | 4G077 | |
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....with formula BMe2O4, wherein B is Mg, Ni, Co, Al, Zn or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al [3] | HB | CC | 4G077 | |
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....with formula A3Me5O12, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets [3] | HB | CC | 4G077 | |
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....Niobates; Vanadates; Tantalates [3] | HB | CC | 4G077 | |
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Niobates (C takes precedence) | HB | CC | 4G077 | |
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Tantalates (C takes precedence) | HB | CC | 4G077 | |
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Containing niobates and tantalates | HB | CC | 4G077 | |
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Vanadates | HB | CC | 4G077 | |
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Others | HB | CC | 4G077 | |
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....Titanates; Germanates; Molybdates; Tungstates [3] | HB | CC | 4G077 | |
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Titanates | HB | CC | 4G077 | |
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.Titanates of alkaline metal | HB | CC | 4G077 | |
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.Titanates of alkaline earth metal | HB | CC | 4G077 | |
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.Lead titanates | HB | CC | 4G077 | |
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Germanates | HB | CC | 4G077 | |
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Molybdates | HB | CC | 4G077 | |
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Tungstates | HB | CC | 4G077 | |
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Others | HB | CC | 4G077 | |
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..Silicates [3] | HB | CC | 4G077 | |
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Beryls (BeO-Al2O3-SiO2) | HB | CC | 4G077 | |
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Others | HB | CC | 4G077 | |
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..Carbides [3] | HB | CC | 4G077 | |
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Carbides | HB | CC | 4G077 | |
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Others | HB | CC | 4G077 | |
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..Nitrides [3] | HB | CC | 4G077 | |
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Containing B, e.g. BN, BCN | HB | CC | 4G077 | |
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Containing Si, e.g. Si3N4 | HB | CC | 4G077 | |
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Containing Al, e.g. AIN | HB | CC | 4G077 | |
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Containing Ga, e.g. GaN | HB | CC | 4G077 | |
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Others | HB | CC | 4G077 | |
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..AIIIBV compounds [3] | HB | CC | 4G077 | |
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Characterized by crystal per se, e.g. determination of physical properties and concentration of impurities in crystal | HB | CC | 4G077 | |
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Synthesis, refining of materials for crystal growth | HB | CC | 4G077 | |
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Treatment of crystals | HB | CC | 4G077 | |
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Purpose of articles using A3BV compound crystal | HB | CC | 4G077 | |
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Others | HB | CC | 4G077 | |
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...Growth from liquid state | HB | CC | 4G077 | |
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By pull-up method | HB | CC | 4G077 | |
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Growing film on substrate from liquid state | HB | CC | 4G077 | |
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By normal freezing or temperature gradient coagulation | HB | CC | 4G077 | |
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By band melting method | HB | CC | 4G077 | |
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By solute synthesis diffusion method | HB | CC | 4G077 | |
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Others | HB | CC | 4G077 | |
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...Growth from gas state | HB | CC | 4G077 | |
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Growth of film on substrate (by molecular beam K) | HB | CC | 4G077 | |
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.Characterized by selection of material gas | HB | CC | 4G077 | |
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..Characterized by selection of ingredient gas other than 3, V group, e.g. impurity gas, carrier gas | HB | CC | 4G077 | |
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.Generation, supply, discharge of material gas | HB | CC | 4G077 | |
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..Changing supply volume, mix of material gas during growth, e.g. alternately supplying ingredients, changing supply volume of certain ingredient | HB | CC | 4G077 | |
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.Characterized by substrate materials | HB | CC | 4G077 | |
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.Treatment of substrates (Forming other film of Si on substrate that later growing it, H) | HB | CC | 4G077 | |
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.Forming other layer between substrate and growth layer, e.g. buffer layer, or forming multiple growth layers on substrate | HB | CC | 4G077 | |
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.Growing on certain areas of substrate | HB | CC | 4G077 | |
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.Growing by molecular beam | HB | CC | 4G077 | |
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Obtaining crystal of shapes other than film from the gas method | HB | CC | 4G077 | |
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Others | HB | CC | 4G077 | |
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...Gallium arsenide [3] | HB | CC | 4G077 | |
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...Gallium phosphide [3] | HB | CC | 4G077 | |
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..Sulfur-, selenium- or tellurium-containing compounds [3] | HB | CC | 4G077 | |
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...AIIBVI compounds [3] | HB | CC | 4G077 | |
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....Cadmium sulfide [3] | HB | CC | 4G077 | |
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..Alloys [3] | HB | CC | 4G077 | |
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.Organic compounds [3] | HB | CC | 4G077 | |
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..Tartrates [3] | HB | CC | 4G077 | |
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..Macromolecular compounds [3] | HB | CC | 4G077 | |
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.characterised by shape [3] | HB | CC | 4G077 | |
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..Whiskers or needles [3] | HB | CC | 4G077 | |
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Oxides (composite oxides, E) | HB | CC | 4G077 | |
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.Alumina | HB | CC | 4G077 | |
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.Titanium oxides | HB | CC | 4G077 | |
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.Zinc oxides | HB | CC | 4G077 | |
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Composite oxides; oxysalt | HB | CC | 4G077 | |
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.Titanates | HB | CC | 4G077 | |
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.Hydrosulphates, e.g. calcium sulphates | HB | CC | 4G077 | |
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.Borates | HB | CC | 4G077 | |
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Carbides | HB | CC | 4G077 | |
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.Silicon carbide | HB | CC | 4G077 | |
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..Using silicon dioxide as material | HB | CC | 4G077 | |
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..Using Si, Si alloy as material | HB | CC | 4G077 | |
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..Using degradable silicon compounds, e.g. organic silicon compounds, or gaseous silicon compounds as material | HB | CC | 4G077 | |
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..Refining or treatment of silicon carbide whisker | HB | CC | 4G077 | |
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Nitrides | HB | CC | 4G077 | |
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.Silicon nitride | HB | CC | 4G077 | |
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Carbon | HB | CC | 4G077 | |
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Metals, alloys | HB | CC | 4G077 | |
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Manufacturing method in general (with manufactured whiskers not specified) | HB | CC | 4G077 | |
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Treatment of whisker (with whisker not specified) | HB | CC | 4G077 | |
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Others | HB | CC | 4G077 | |
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..Flat crystals, e.g. plates, strips or disks [5] | HB | CC | 4G077 | |
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..Crystals of complex geometrical shape, e.g. tubes, cylinders [5] | HB | CC | 4G077 | |
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..Crystals with laminate structure, e.g. "superlattices" [5] | HB | CC | 4G077 | |