FI (list display)

  • C30B11/00
  • Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method (C30B 13/00, C30B 15/00, C30B 17/00, C30B 19/00 take precedence; under a protective fluid C30B 27/00) [3] HB CC 4G077
  • C30B11/00@C
  • Melting pots or containers HB CC 4G077
  • C30B11/00@Z
  • Others HB CC 4G077
  • C30B11/02
  • .without using solvents (C30B 11/06 takes precedence) [3] HB CC 4G077
  • C30B11/04
  • .adding crystallising materials or reactants forming it in situ to the melt [3] HB CC 4G077
  • C30B11/06
  • ..at least one but not all components of the crystal composition being added [3] HB CC 4G077
  • C30B11/08
  • ..every component of the crystal composition being added during the crystallisation [3] HB CC 4G077
  • C30B11/10
  • ...Solid or liquid components, e.g. Verneuil method [3] HB CC 4G077
  • C30B11/12
  • ...Vaporous components, e.g. vapour-liquid-solid-growth [3] HB CC 4G077
  • C30B11/14
  • .characterised by the seed, e.g. its crystallographic orientation [3] HB CC 4G077
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