This page displays all 「FI」 in main group C30B15/00. |
HB:Handbook | ||||
CC:Concordance |
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Single-crystal growth by pulling from a melt, e.g. Czochralski method (under a protective fluid C30B 27/00) [3] | HB | CC | 4G077 | |
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Pedestal pull-up method (Pedestal pull-up method is a single crystal fostering method that melts a part of solid materials and pulls up single crystal by soaking the seed in that area.) | HB | CC | 4G077 | |
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Others | HB | CC | 4G077 | |
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.adding crystallising materials or reactants forming it in situ to the melt [3] | HB | CC | 4G077 | |
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..adding doping materials, e.g. for n–p-junction [3] | HB | CC | 4G077 | |
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.Non-vertical pulling [3] | HB | CC | 4G077 | |
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.Downward pulling [3] | HB | CC | 4G077 | |
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.Crucibles or containers for supporting the melt [3] | HB | CC | 4G077 | |
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..Double crucible methods [3] | HB | CC | 4G077 | |
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.Heating of the melt or the crystallised materials [3] | HB | CC | 4G077 | |
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..by irradiation or electric discharge [3] | HB | CC | 4G077 | |
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..using direct resistance heating in addition to other methods of heating, e.g. using Peltier heat [3] | HB | CC | 4G077 | |
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.Controlling or regulating (controlling or regulating in general G05) [3] | HB | CC | 4G077 | |
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..Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal [3] | HB | CC | 4G077 | |
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...using mechanical means, e.g. shaping guides (shaping dies for edge-defined film-fed crystal growth C30B 15/34) [3] | HB | CC | 4G077 | |
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...using television detectors; using photo or X-ray detectors [3] | HB | CC | 4G077 | |
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...using weight changes of the crystal or the melt, e.g. flotation methods [3] | HB | CC | 4G077 | |
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.Mechanisms for rotating or moving either the melt or the crystal (flotation methods C30B 15/28) [3] | HB | CC | 4G077 | |
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.Seed holders, e.g. chucks [3] | HB | CC | 4G077 | |
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.Edge-defined film-fed crystal growth using dies or slits [3] | HB | CC | 4G077 | |
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.characterised by the seed, e.g. its crystallographic orientation [3] | HB | CC | 4G077 | |