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This page displays all 「FI」 in main group C30B23/00. |
HB:Handbook | ||||
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CC:Concordance | |||||
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Single-crystal growth by condensing evaporated or sublimed materials [3] | HB | CC | 4G077 | |
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.Epitaxial-layer growth [3] | HB | CC | 4G077 | |
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..Pattern deposit, e.g. by using masks [3] | HB | CC | 4G077 | |
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..Heating of the deposition chamber, the substrate, or the materials to be evaporated [3] | HB | CC | 4G077 | |
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..by condensing ionised vapours (by reactive sputtering C30B 25/06) [3] | HB | CC | 4G077 | |
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By molecular beam | HB | CC | 4G077 | |
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Using plasma | HB | CC | 4G077 | |
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Others | HB | CC | 4G077 | |