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Thermoelectric or thermomagnetic devices[2023.01]
  • H10N10/00
    		•  Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects (integrated devices or assemblies of multiple devices H10N 19/00) [2023.01]
    		HB CC 5F091
  • H10N15/00
    		•  Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect (integrated devices or assemblies of multiple devices H10N 19/00) [2023.01] HB CC 5F091
  • H10N19/00
    		•  Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N 10/00-H10N 15/00 [2023.01] HB CC 5F091
    Piezoelectric, electrostrictive or magnetostrictive devices[2023.01]
  • H10N30/00
    		•  Piezoelectric or electrostrictive devices (integrated devices or assemblies of multiple devices H10N 39/00) [2023.01] HB CC 5F050
  • H10N35/00
    		•  Magnetostrictive devices (integrated devices or assemblies of multiple devices H10N 39/00) [2023.01] HB CC 5F050
  • H10N39/00
    		•  Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N 30/00-H10N 35/00 [2023.01] HB CC 5F050
    Galvanomagnetic or similar magnetic-effect devices[2023.01]
  • H10N50/00
    		•  Galvanomagnetic devices (Hall-effect devices H10N 52/00; integrated devices or assemblies of multiple devices H10N 59/00) [2023.01] HB CC 5F092
  • H10N52/00
    		•  Hall-effect devices (integrated devices or assemblies of multiple devices H10N 59/00) [2023.01] HB CC 5F092
  • H10N59/00
    		•  Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N 50/00-H10N 52/00 (MRAM devices H10B 61/00) [2023.01] HB CC 5F092
    Superconducting devices[2023.01]
  • H10N60/00
    		•  Superconducting devices (integrated devices or assemblies of multiple devices H10N 69/00) [2023.01] HB CC 4M113
  • H10N69/00
    		•  Integrated devices, or assemblies of multiple devices, comprising at least one superconducting element covered by group H10N 60/00 [2023.01] HB CC 4M113
  • H10N70/00
    		•  Solid-state devices having no potential barriers?, and specially adapted for rectifying, amplifying, oscillating or switching (integrated devices or assemblies of multiple devices H10N 79/00)[2023.01] HB CC 5F093
  • H10N79/00
    		•  Integrated devices, or assemblies of multiple devices, comprising at least one solid-state element covered by group H10N 70/00 (ReRAM devices H10B 63/00; PCRAM devices H10B 63/10) [2023.01] HB CC 5F093
  • H10N80/00
    		•  Bulk negative-resistance effect devices (integrated devices or assemblies of multiple devices H10N 89/00) [2023.01] HB CC 5F094
  • H10N89/00
    		•  Integrated devices, or assemblies of multiple devices, comprising at least one bulk negative resistance effect element covered by group H10N 80/00 [2023.01] HB CC 5F094
  • H10N97/00
    		•  Electric solid-state thin-film or thick-film devices, not otherwise provided for [2023.01] HB CC 5F095
  • H10N99/00
    		•  Subject matter not provided for in other groups of this subclass [2023.01] HB CC 5F095
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