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  • H10N50/00
    		•  Galvanomagnetic devices (Hall-effect devices H10N 52/00; integrated devices or assemblies of multiple devices H10N 59/00) [2023.01] HB CC 5F092
  • H10N50/01
    		•  .Manufacture or treatment [2023.01] HB CC 5F092
  • H10N50/10
    		•  .Magnetoresistive devices [2023.01] HB CC 5F092
  • H10N50/10@A
    		•  Characterized by the circuits HB CC 5F092
  • H10N50/10@S
    		•  Semiconductor magnetoresistive elements HB CC 5F092
  • H10N50/10@M
    		•  Ferromagnetic bodies HB CC 5F092
  • H10N50/10@P
    		•  Magnetosensitive part patterns HB CC 5F092
  • H10N50/10@B
    		•  Bias magnetic fields HB CC 5F092
  • H10N50/10@U
    		•  Use HB CC 5F092
  • H10N50/10@Z
    		•  Others HB CC 5F092
  • H10N50/20
    		•  .Spin-polarised current-controlled devices (magnetoresistive devices H10N 50/10) [2023.01] HB CC 5F092
  • H10N50/80
    		•  .Constructional details [2023.01] HB CC 5F092
  • H10N50/80@D
    		•  Electrodes HB CC 5F092
  • H10N50/80@H
    		•  Protective layers HB CC 5F092
  • H10N50/80@P
    		•  Characterized by the movable members, e.g., potentiometers HB CC 5F092
  • H10N50/80@Z
    		•  Others HB CC 5F092
  • H10N50/85
    		•  ..Magnetic active materials [2023.01] HB CC 5F092
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