FI (list display)

  • H10N52/00
  • Hall-effect devices (integrated devices or assemblies of multiple devices H10N 59/00) [2023.01] HB CC 5F092
  • H10N52/00@A
  • Characterized by the circuits HB CC 5F092
  • H10N52/00@C
  • Solid inductors HB CC 5F092
  • H10N52/00@S
  • Semiconductors HB CC 5F092
  • H10N52/00@M
  • Ferromagnetic bodies HB CC 5F092
  • H10N52/00@P
  • Magnetosensitive part patterns HB CC 5F092
  • H10N52/00@B
  • Bias magnetic fields HB CC 5F092
  • H10N52/00@U
  • Use HB CC 5F092
  • H10N52/00@Z
  • Others HB CC 5F092
  • H10N52/01
  • .Manufacture or treatment [2023.01] HB CC 5F092
  • H10N52/80
  • .Constructional details [2023.01] HB CC 5F092
  • H10N52/80@D
  • Electrodes HB CC 5F092
  • H10N52/80@H
  • Protective layers HB CC 5F092
  • H10N52/80@Z
  • Others HB CC 5F092
  • H10N52/85
  • ..Magnetic active materials [2023.01] HB CC 5F092
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