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F-Term-List

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5F092 HALL/MR ELEMENTS
H01L27/22 ;29/82-29/82@Z;43/00-43/14
H01L27/22;29/82-29/82@Z;43/00-43/14 AA AA00
PURPOSE OR EFFECT 		AA01 AA02 AA03 AA04 AA05 AA06 AA07 AA08 AA09 AA10
. High sensitisation . High-powered . Accelerating . Reduced power consumption . Signal-to-noise (SN) ratio enhancement . Element life extension . Enhancement of environmental resistivity . . Enhancement of heat resistance or temperature characteristics . . Enhancement of mechanical strength . . Enhancement of voltage-resistance
AA11 AA12 AA13 AA14 AA15 AA20
. Improvement of manufacturing processes . Micronisation . Three-dimentionalisation . Compensation of offsets . Stabilisation of operation including reduction of variations . Others *
AB AB00
APPLICATION 		AB01 AB02 AB03 AB04 AB06 AB07 AB08 AB09 AB10
. Magnetic sensors . Magnetic heads . . Shield types . . Yoke types including flux guide types . MRAMs . . Matrix types . . having selection transistors . RRAMs . Others *
AC AC00
TYPE OF ELEMENT 		AC01 AC02 AC04 AC05 AC06 AC07 AC08
. Magnetic impedance elements or MI elements . Hall effect elements . Magnetoresistance effect elements or MR elements . . Anisotropic magnetoresistance effect elements (AMR) . . Giant magnetoresistance effect elements (GMR) . . . Artificial lattice types . . . Spin valve types
AC11 AC12 AC14 AC15 AC17
. . Tunnel magnetoresistance effect elements (TMR) . . . Spin valve types . . Colossal magnetoresistance effect elements (CMR) . . Ballistic magnetoresistance effect elements (BMR) . SMD or SMT
AC21 AC22 AC23 AC24 AC25 AC26 AC30
. Spin elements . . Spin transistors . . . Bipolar types . . . Field-effect transistor types or FET types . . Spin supply elements . . Spin Hall effect elements . Others *
AD AD00
CHARACTERISED BY ACTION OF ELEMENT 		AD01 AD02 AD03 AD04 AD05 AD06 AD07 AD08
. characterised by applied currents or voltages . . characterised by directions of detection currents . . . vertical to main surfaces of substrates or film surfaces including CPP elements . . . . applying magnetic fields vertically to substrates . . . . applying magnetic fields horizontally to substrates . . . parallel to main surfaces of substrates or film surfaces including CIP . . . . applying magnetic fields vertically to substrates . . . . applying magnetic fields horizontally to substrates
AD12 AD13
. . characterised by other than directions of detection currents . . . characterised by applied voltages
AD21 AD22 AD23 AD24 AD25 AD26 AD28 AD30
. characterised by magnetisation . . characterised by directions of magnetisation . . . using vertical magnetisation . . characterised by methods for controlling magnetisation directions . . . reversing magnetisation by spin injection . . . moving magnetic domain walls by currents . characterised by application timing . Others *
BA BA00
HALL ELEMENT 		BA01 BA02 BA03 BA04 BA05 BA06 BA07 BA08
. Materials of Hall elements . . Magneto-sensitive units . . . Silicon (Si) . . . Germanium (Ge) . . . Compound semiconductors . . . . Binaries . . . . Ternaries . . . . Quaternaries or higher compounds
BA11 BA12 BA13 BA14 BA15 BA16 BA17 BA19 BA20
. . Substrates . . . Silicon (Si) . . . . Silicon on insulators or SOIs . . . Germanium (Ge) . . . Compound semiconductors . . . Insulators . . . Magnetic bodies . . Electrodes . . Protective layers
BA21 BA22 BA23 BA25
. Plane shapes in operation units of Hall elements . . Cruciforms . . Square . Cross-sectional shapes in operation units of Hall elements
BA31 BA32 BA33 BA34 BA35 BA37 BA40
. Structures of Hall elements . . Thin film types . . . Layered structures . . . . Buffer layers . . . . Two-dimensional electrons . . Bulk types . Others *
BB BB00
MATERIAL OF MR ELEMENT 		BB01 BB02 BB03 BB04 BB05 BB06 BB08 BB09 BB10
. Substrates . . Magnetic bodies . . Conductors . . Semiconductors . . Insulators . . Organic materials . Base layers including seed layers or the like . . Magnetic bodies . . Conductors
BB11 BB12 BB13 BB15 BB16 BB17 BB18 BB19 BB20
. . Semiconductors . . Insulators . . Organic materials . Layers to fix magnetisation of fixed layers . . Antiferromagnetic layers . . . Alloys containing manganese (Mn) . . . Oxides . . . Semiconductors . . . Organic materials
BB21 BB22 BB23 BB24 BB25 BB26 BB27 BB29 BB30
. Fixed layers . . Alloys or elementary metals of only iron (Fe) cobalt (Co) or nickel (Ni) . . Alloys of irons (Fe) cobalts (Co) or nickels (Ni) and other metals . . Alloys excluding irons (Fe) cobalts (Co) or nickels (Ni) . . Oxides . . Semiconductors . . Organic materials . Intermediate layers . . Conductors
BB31 BB32 BB33 BB34 BB35 BB36 BB37 BB38 BB39 BB40
. . . Elementary metals e.g. copper (Cu) aluminium (Al) or silver (Ag) . . . Alloys . . Insulators . . . Oxides . . . . Aluminium oxide (Al2O3) . . . . Magnesium oxide (MgO) . . . . Silicon oxide (SiO2) . . Semiconductors . . Organic materials . . Magnetic bodies
BB41 BB42 BB43 BB44 BB45 BB46 BB47 BB49
. Free layers including magneto-sensitive layers . . Alloys or elementary metals of only iron (Fe) cobalt (Co) or nickel (Ni) . . Alloys of irons (Fe) cobalts (Co) or nickels (Ni) and other metals . . Alloys excluding irons (Fe) cobalts (Co) or nickels (Ni) . . Oxides . . Semiconductors . . Organic materials . Specular reflection layers
BB51 BB53 BB55 BB57 BB58 BB59 BB60
. Spin filter layers . Protective layers including cap layers or the like . Electrodes . Base layers for controlling magnetic domains or vertical biases . . Magnetic bodies . . Conductors . . Insulators
BB61 BB62 BB64 BB65 BB66 BB67 BB68 BB69 BB70
. . Semiconductors . . Organic materials . Layers for controlling magnetic domains or vertical bias layers . . Alloys or elementary metals of only iron (Fe) cobalt (Co) or nickel (Ni) . . Alloys of irons (Fe) cobalts (Co) or nickels (Ni) and other metals . . Alloys excluding irons (Fe) cobalts (Co) or nickels (Ni) . . Oxides . . Semiconductors . . Organic materials
BB71 BB73 BB74 BB75 BB76 BB77 BB78 BB79
. . Antiferromagnetic materials . Bias layers or lateral bias layers . . Alloys or elementary metals of only iron (Fe) cobalt (Co) or nickel (Ni) . . Alloys of irons (Fe) cobalts (Co) or nickels (Ni) and other metals . . Alloys excluding irons (Fe) cobalts (Co) or nickels (Ni) . . Oxides . . Semiconductors . . Organic materials
BB81 BB82 BB90
. Interlayer insulating films . . Silicon dioxide (SiO2) . Others *
BC BC00
STRUCTURE OR SHAPE OF MR ELEMENT 		BC01 BC02 BC03 BC04 BC06 BC07 BC08 BC09 BC10
. characterised by layered structures . . Sequence of stacking layers for forming MR elements . . . Fixed layers being above free layers . . . Free layers being above fixed layers . . Layered ferrimagnetism . . . Fixed layers . . . Free layers including magneto-sensitive layers . . . Layers for controlling magnetic domains or vertical bias layers . . . Bias layers or lateral bias layers
BC11 BC12 BC13 BC14 BC15 BC16 BC17 BC18 BC19 BC20
. . Particular layers having layered structures excluding layered ferrimagnetism . . . Fixed layers . . . Free layers including magneto-sensitive layers . . . Intermediate layers . . . Layers for controlling magnetic domains or vertical bias layers . . . Bias layers or lateral bias layers . . . Layers to fix magnetisation of fixed layers . . . Base layers . . . Individual layers of layered ferrimagnetism . . . Spin filter layers or specular reflective layers
BC22
. . . Protective layers including cap layers or the like
BC31 BC32 BC33 BC34 BC35 BC36 BC38 BC39 BC40
. Granular structures . . Fixed layers . . Free layers including magneto-sensitive layers . . Intermediate layers . . Layers for controlling magnetic domains or vertical bias layers . . Bias layers or lateral bias layers . . Matrix being conductors . . Matrix being insulators . . Matrix being semiconductors
BC41 BC42 BC43 BC45 BC46 BC47 BC48 BC50
. characterised by shapes of operation units of MR elements . . Plane shapes . . Cross-sectional shapes . stacking a plurality of elements e.g. dual spin valves . . sharing free layers . . without sharing free layers . . Three or more elements being stacked . Others *
BD BD00
ELEMENT OTHER THAN HALL ELEMENT OR MR ELEMENT 		BD01 BD02 BD03 BD04 BD05 BD06 BD07 BD08
. Materials . . Magnetic bodies . . . Alloys or elementary metals of only iron (Fe) cobalt (Co) or nickel (Ni) . . . Alloys of irons (Fe) cobalts (Co) or nickels (Ni) and other metals . . . Alloys excluding irons (Fe) cobalts (Co) or nickels (Ni) . . . Oxides . . . Semiconductors . . . Organic materials
BD12 BD13 BD14 BD15 BD16 BD18 BD19 BD20
. . Non-magnetic bodies . . . Conductors . . . Insulators . . . Semiconductors . . . Organic materials . characterised by shapes . . Plane shapes . . Cross-sectional shapes
BD21 BD22 BD23 BD24 BD25 BD26 BD30
. characterised by structures . . Substrates . . Operation layers . . Electrodes . . Protective layers . . Interlayer insulating films . Others *
BE BE00
FEATURE COMMON TO EACH ELEMENT 		BE01 BE02 BE03 BE04 BE05 BE06
. Crystalline states of layers forming elements . . Single crystals . . Polycrystals . . Microcrystals . . Mixed crystals . . Amorphous
BE11 BE12 BE13 BE14 BE15
. Crystals of layers forming elements . . Tetragonal crystals . . Cubic crystals . . Hexagonal closest-packed structures . . Perovskite structures
BE21 BE23 BE24 BE25 BE27 BE30
. characterised by crystal orientation . characterised by compositions of materials . . with numerical limitation . . having features in additive elements . characterised by film thickness . Others *
CA CA00
PROCESS OF MANUFACTURE 		CA01 CA02 CA03 CA04 CA06 CA07 CA08 CA09
. Film forming . . Physical vapour deposition (PVD) . . Chemical vapour deposition (CVD) . . Coating processes . Patterning . . Exposure . . Etching . . . Ion milling
CA11 CA13 CA14 CA15 CA17 CA19 CA20
. Impurity injection . Oxidation treatment . . Natural oxidation . . Plasma oxidation . Nitriding treatment . Flattening processing . . Chemical mechanical polishing (CMP)
CA21 CA22 CA23 CA25 CA26 CA28
. Magnetising treatment . . simultaneously with film forming . . performed after film-forming . Heat treatment . . for regulating . Alignment
CA31 CA35 CA40
. characterised by simultaneous formation . Subsequent processes . Others *
DA DA00
CIRCUITRY 		DA01 DA03 DA04 DA05 DA06 DA07 DA08 DA10
. characterised by circuit arrangements in elements . characterised by peripheral circuits . . Drive circuits . . Temperature compensation circuits . . Comparison circuits . . Amplifier circuits . . A/D converter circuits . Others *
EA EA00
INTEGRATION OR LAYOUT 		EA01 EA04 EA05 EA06 EA07 EA08 EA10
. characterised by layouts . integrated on one chip with other elements . . Diodes . . Transistors . . Resistors capacitors or the like . . Coils . Others *
FA FA00
MOUNTING 		FA01 FA02 FA03 FA04 FA05 FA06 FA08 FA09 FA10
. Mounts . Leads . Bonding pads . Packaging . . Mould types . . Cap types . having magnetism collecting members or bias magnets . having magnetic shield members . Others *
GA GA00
OTHER 		GA01 GA03 GA05 GA10
. Testing or measuring . Simulation . Manufacturing equipment . Others *
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