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4M113 SUPERCONDUCTOR DEVICES AND MANUFACTURING METHODS THEREOF
H01L27/18 ;39/00-39/00@Z;39/06-39/12@Z;39/18;39/22-39/24@Z
H01L27/18;39/00-39/00@Z;39/06-39/12@Z;39/18;39/22-39/24@Z AA AA00
JOSEPHSON DEVICE 		AA01 AA02 AA03 AA04 AA05 AA06 AA07 AA08
. Tunnel type Josephson devices i.e. sandwich types . . Counter electrodes i.e. top or upper counter electrodes . . . Hard metals . . . . Niobium (Nb) . . . Soft metals . . . Ceramics i.e. oxide superconductors . . . Multiple layers . . . . Metals e.g. normal metals or resistors
AA12 AA13 AA14 AA15 AA16 AA17 AA18 AA19
. . Base electrodes i.e. lower electrodes . . . Hard metals . . . . Niobium (Nb) . . . Soft metals . . . Ceramics i.e. oxide superconductors . . . Multilayers . . . . Metals or normal metals or resistors . . with characteristics described
AA22 AA23 AA24 AA25 AA26 AA27 AA28 AA29 AA30
. . Barrier layers . . . Insulators . . . . Semiconductors . . . . Oxides . . . . . Oxidation of electrode . . . Semiconductors . . . . Doping . . . Metals i.e. normal metals . . . . Alloys
AA33 AA34 AA37
. . . with limited thickness * . . . . Coherent encroachment into magnetic field . . Laterally oriented current
AA41 AA42 AA43 AA44 AA45 AA46
. Soliton devices . . Fluxoid transmission . . Functions . . . Logic . . . Pulse oscillation . . . Memory
AA51 AA52 AA53 AA54 AA55 AA57 AA59 AA60
. Bridge type Josephson devices . . Bridges that use constricted sections . . Bridges by level differences . . Bridges by grooves . . Bridges by grain boundaries . Pin type Josephson devices . having heat radiating structures . Other Josephson devices
AB AB00
SUPERCONDUCTING TRANSISTOR 		AB01 AB04 AB05 AB07 AB08
. Josephson transistors . utilising proximity effect . . controlling current within semiconductors by a proximity effect . injecting carrier . . Types of quasi-particle injection
AB11 AB15
. Other superconducting transistors . based on new theories
AC AC00
OTHER SUPERCONDUCTING DEVICE 		AC01 AC02 AC03 AC04 AC05 AC06 AC07 AC08 AC09 AC10
. Memory elements . . utilising fluxoid quanta . . . utilising Josephson devices . . utilising permanent current . . of nondestructive type . SQUID i.e. Superconducting quantum interference devices . . RF-SQUID i.e. Radio frequency superconducting quantum interference devices . . DC-SQUID i.e. direct current superconducting quantum interference devices . . . with three or more junctions . . formed into a cylinder
AC11 AC12 AC13
. Light-emitting elements . . Lasers . . with wavelength specified *
AC21 AC22 AC23 AC24 AC25 AC29 AC30
. Light-receiving elements . . using Josephson elements . . using photoconductive semiconductors . . Radiation detection . . Electromagnetic wave detection . . Devices with a plurality of light-receiving elements . . . Matrix
AC31 AC32 AC33 AC36 AC37 AC38 AC39
. Resistor elements . . using Josephson elements . . Others . Switches . . Switches that switch between superconducting state and normal conduction state . . . Using critical temperatures . . . Using critical magnetic fields
AC41 AC42 AC44 AC45 AC46 AC48 AC50
. Temperature sensors . . Bolometers . Other elements . . Quantum devices . . Magnetic flux detecting elements . . Elements that generate magnetism . . Elements based on new theories
AD AD00
SUPERCONDUCTING CIRCUIT 		AD01 AD02 AD03 AD04 AD05 AD06 AD07 AD08
. Circuit arrangements . . Magnetically coupled gates . . . with two junctions in parallel . . . . SIL i.e. symmetrical interferometer logic or symmetrical gates . . . . AIL i.e. asymmetrical interferometer logic or asymmetrical gates . . . with three junctions in parallel . . . . JIL i.e. Josephson interferometer logic . . . with four or more junctions in parallel
AD11 AD12 AD13 AD14 AD15 AD16 AD17 AD18 AD19
. . . Interferometer-type current injection gates . . . . CIG i.e. current injection gate . . . . . 4JL i.e. Current injection logic gates with four Josephson junctions . . . Non-interference injection types . . . . JAWS i.e. Josephson Atto-Weber logic or DCL i.e. direct coupled logic . . with junctions in series . . . with three junctions . . . with four or more junctions . . . Regulators
AD21 AD22 AD23 AD24 AD25 AD26
. Circuit functions . . Memory circuits . . Logic circuits . . . AND circuits . . . OR circuits . . . NOT circuits
AD31 AD32 AD33 AD34 AD35 AD36 AD37 AD38 AD39 AD40
. Circuit structures . . Substrates . . . Moats . . . Buffers . . . . Buffer materials . . . Materials * . . . . Magnesium oxide (MgO) . . . . Zirconia (ZrO2) . . . . Yttoria-stabilised zirconia (YSZ) . . . Substrate orientation
AD41 AD42 AD43 AD44 AD45 AD46 AD47
. . Element separating structures . . . Ground planes . . . Prevention of mutual interference . . . Magnetic shielding . . . . Superconductors . . . characterised by shape (other than flat) . . . characterised by materials *
AD51 AD52 AD53 AD54 AD56 AD58
. . Wiring patterns . . . Control lines . . . . with two control lines . . . . with three or more control lines . . . Multi-layer wiring . . . characterised by materials *
AD61 AD62 AD63 AD66 AD67 AD68
. . Electrodes . . . Contact structures . . . characterised by materials * . . Insulating films . . . Interlayer insulating films . . . characterised by materials *
BA BA00
METHOD OF MANUFACTURING SUBSTRATE AND THIN FILM 		BA01 BA02 BA03 BA04 BA05 BA06 BA07 BA08 BA09
. Formation of substrate . Formation of thin film . . Vapour phase processes . . . PVD i.e. physical vapour deposition . . . . DC sputtering . . . . AC sputtering . . . . RF sputtering . . . . Magnetron sputtering . . . . characterised by the target
BA11 BA12 BA13 BA14 BA15 BA16 BA17 BA18
. . . . Vacuum vapour deposition . . . . . Simultaneous vapour deposition . . . . . Laminate vapour deposition . . . . MBEi.e. molecular beam epitaxy MEE i.e. molecular electron epitaxy ALE i.e. atomic layer epitaxy or MLE i.e. molecular layer epitaxy . . . CVD i.e. chemical vapour deposition . . . . Thermal chemical vapour deposition . . . . Optical chemical vapour deposition . . . . MO-CVD i.e. metal organic chemical vapour deposition
BA21 BA22 BA23 BA24 BA25 BA26 BA28 BA29 BA30
. . Liquid phase methods . . . Plasma spray methods . . . Solution methods . . . Doctor blade methods . . . Screen printing methods . . Solid phase methods . . Heat treatment or annealing . . . characterised by temperature or atmosphere . . . characterised by time
BB BB00
METHOD OF MANUFACTURING DEVICE 		BB01 BB02 BB03 BB04 BB07 BB08 BB09 BB10
. Methods of forming electrodes . . Counter electrodes . . Base electrodes . . Contact electrodes . Methods of forming junction sections . . Thermal oxidation . . Vapour deposition of insulating substances . . DC sputtering
BB11 BB12 BB13 BB14 BB15 BB16 BB17 BB18 BB19 BB20
. . AC sputtering . . RF sputtering . . Oxidation by oxygen gas plasma ions . . Gas materials * . . . Silane (SiH4) . . . Argon (Ar) . . . Ozone . . Gas pressure . . Oxygen pressure . . Discharge voltage
BC BC00
OTHER MANUFACTURING METHOD 		BC01 BC02 BC03 BC04 BC05 BC06 BC07 BC08 BC09
. Methods of forming patterns . . Lift-off . . . Stencil formation . . Dry etching . . Wet etching . . using stoppers . . modifying materials . . . Ion beam irradiation . . . Laser irradiation
BC11 BC12 BC15 BC16 BC17 BC18 BC19 BC20
. . Screen printing . . characterised by resists . Washing or cleaning . . Sputter etching . . . characterised by gas * . . . . Fluorocarbons . . . . Argon (Ar) . . . Gas pressure *
BC21 BC22 BC23 BC26 BC27 BC28 BC29
. Separation and formation of elements . . Formation of ground planes . . Formation of shields . Formation of insulating films . . Anodic oxidation . . Vapour deposition of insulating substances . . . Vapour deposition of silicon monoxide (SiO)
CA CA00
SUPERCONDUCTING MATERIAL 		CA01 CA02 CA03 CA04 CA06 CA07 CA08
. Metals * . . characterised by magnetic properties . . . Type I superconductor . . . Type II superconductor . . characterised by hardness . . . Hard metals . . . Soft metals
CA11 CA12 CA13 CA14 CA15 CA16 CA17 CA18 CA19
. . characterised by materials * . . . Elements * . . . . Nb (Niobium) . . . . Pb (Lead) . . . . Ga (Gallium) . . . Compounds * . . . . Niobium (Nb)-based compounds . . . . Vanadium (V)-based compounds . . . Alloys
CA21
. Organic substances
CA31 CA32 CA33 CA34 CA35 CA36 CA39 CA40
. Oxides . . BPBO (BaPb1-xBixO3) . . Lanthanum (La)-based . . Ln series (lanthanides) . . Bismuth (Bi)-based . . Thallium (Tl)-based . Other substances * . . Semiconductors
CA41 CA42 CA43 CA44 CA45 CA47
. Critical temperatures . . Below the boiling point of liquid hydrogen . . At or above the boiling point of liquid hydrogen . . At or above the boiling point of liquid nitrogen . . described as at or above the melting point of water . n-type superconductors
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