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  • H10N60/00
    		•  Superconducting devices (integrated devices or assemblies of multiple devices H10N 69/00) [2023.01] HB CC 4M113
  • H10N60/00@A
    		•  Devices by making use of the superconductive properties HB CC 4M113
  • H10N60/00@G
    		•  .Devices by making use of the magnetic properties HB CC 4M113
  • H10N60/00@M
    		•  .Devices by making use of Meissner effect HB CC 4M113
  • H10N60/00@C
    		•  Connecting superconductors except their wires HB CC 4M113
  • H10N60/00@S
    		•  Magnetic shielding materials HB CC 4M113
  • H10N60/00@Z
    		•  Others HB CC 4M113
  • H10N60/01
    		•  .Manufacture or treatment [2023.01] HB CC 4M113
  • H10N60/01@B
    		•  Methods of manufacturing thin films HB CC 4M113
  • H10N60/01@C
    		•  .For Josephson elements HB CC 4M113
  • H10N60/01@D
    		•  .Lamination HB CC 4M113
  • H10N60/01@F
    		•  Methods of treating thin films HB CC 4M113
  • H10N60/01@J
    		•  Methods of manufacturing Josephson elements HB CC 4M113
  • H10N60/01@K
    		•  Devices to manufacture Josephson elements HB CC 4M113
  • H10N60/01@W
    		•  Methods of manufacturing circuit boards HB CC 4M113
  • H10N60/01@Z
    		•  Others HB CC 4M113
  • H10N60/10
    		•  .Junction-based devices [2023.01] HB CC 4M113
  • H10N60/10@G
    		•  Superconductive transistors; multi-terminal elements HB CC 4M113
  • H10N60/10@K
    		•  Characterized by the circuits HB CC 4M113
  • H10N60/10@Z
    		•  Others HB CC 4M113
  • H10N60/12
    		•  ..Josephson-effect devices [2023.01] HB CC 4M113
  • H10N60/12@A
    		•  Josephson elements HB CC 4M113
  • H10N60/12@B
    		•  .Memory elements HB CC 4M113
  • H10N60/12@C
    		•  .Soliton devices HB CC 4M113
  • H10N60/12@D
    		•  .For reference voltage of magnetic sensors, for the reference voltages that are present when magnetic fields emerge and are detected HB CC 4M113
  • H10N60/12@Z
    		•  Others HB CC 4M113
  • H10N60/20
    		•  .Permanent superconducting devices [2023.01] HB CC 4M114
  • H10N60/20@A
    		•  Mechanical switches which control the flow of persistent electric current HB CC 4M114
  • H10N60/20@Z
    		•  Others HB CC 4M114
  • H10N60/30
    		•  .Devices switchable between superconducting and normal states [2023.01] HB CC 4M114
  • H10N60/35
    		•  ..Cryotrons [2023.01] HB CC 4M113
  • H10N60/355
    		•  ...Power cryotrons [2023.01] HB CC 4M114
  • H10N60/80
    		•  .Constructional details [2023.01] HB CC 4M114
  • H10N60/80@A
    		•  Mounting superconductive elements, e.g., micropins HB CC 4M114
  • H10N60/80@B
    		•  Thin films used for superconductive elements HB CC 4M114
  • H10N60/80@W
    		•  Circuit boards used for superconductive elements HB CC 4M114
  • H10N60/80@D
    		•  Lamination of superconductive bodies HB CC 4M114
  • H10N60/80@Z
    		•  Others HB CC 4M114
  • H10N60/81
    		•  ..Containers; Mountings [2023.01] HB CC 4M114
  • H10N60/82
    		•  ..Current path [2023.01] HB CC 4M113
  • H10N60/83
    		•  ..Element shape [2023.01] HB CC 4M113
  • H10N60/84
    		•  .. Switching means for devices switchable between superconducting and normal states [2023.01] HB CC 4M113
  • H10N60/85
    		•  .. Superconducting active materials [2023.01] HB CC 4M113
  • H10N60/85@A
    		•  Alloys; intermetallic compounds HB CC 4M113
  • H10N60/85@B
    		•  Organic HB CC 4M113
  • H10N60/85@C
    		•  Ceramics HB CC 4M113
  • H10N60/85@Z
    		•  Others HB CC 4M113
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