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  • H01L29/00
    		•  Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers?; Capacitors or resistors having potential barriers?, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (H01L 31/00-H01L 33/00, H10K 10/00, H10N take precedence; details other than of semiconductor bodies or of electrodes thereof H01L 23/00; devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00)[2006.01] HB CC 5F039
  • H01L29/02
    		•  .Semiconductor bodies [2] HB CC 5F039
  • H01L29/04
    		•  ..characterised by their crystalline structure, e.g. polycrystalline, cubicor particular orientation of crystalline planes (characterised by physical imperfections H01L 29/30) [2] HB CC 5F039
  • H01L29/06
    		•  ..characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions [2] HB CC 5F039
  • H01L29/06,301
    		•  ...Voltage resistance construction HB CC 5F139
  • H01L29/06,301@M
    		•  with oblique surface [mesa, bevel], groove HB CC 5F139
  • H01L29/06,301@F
    		•  with field plate HB CC 5F139
  • H01L29/06,301@S
    		•  with semi-insulating film, high resistance film HB CC 5F139
  • H01L29/06,301@D
    		•  Characterized by semiconductor section [impurity concentration, shape, size, layout; R has priority] HB CC 5F139
  • H01L29/06,301@G
    		•  .with guard ring or field limiting ring HB CC 5F139
  • H01L29/06,301@R
    		•  with controlled curvature [cross section, flat surface] HB CC 5F139
  • H01L29/06,301@V
    		•  For vertical element HB CC 5F139
  • H01L29/06,301@Z
    		•  Others HB CC 5F139
  • H01L29/06,601
    		•  ...Special structure HB CC 5F039
  • H01L29/06,601@Q
    		•  Quantum structure HB CC 5F039
  • H01L29/06,601@W
    		•  .Quantum well HB CC 5F039
  • H01L29/06,601@L
    		•  .Quantum wire HB CC 5F039
  • H01L29/06,601@D
    		•  .Quantum dot, quantum islant HB CC 5F039
  • H01L29/06,601@S
    		•  Superlattice structure HB CC 5F039
  • H01L29/06,601@N
    		•  Nano-structure [by atomic or molecular level operation] HB CC 5F039
  • H01L29/06,601@B
    		•  Three-dimensional element [Example: spherical semiconductor] HB CC 5F039
  • H01L29/06,601@Z
    		•  Others HB CC 5F039
  • H01L29/08
    		•  ...with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes [2] HB CC 5F039
  • H01L29/10
    		•  ...with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes [2] HB CC 5F039
  • H01L29/12
    		•  ..characterised by the materials of which they are formed [2] HB CC 5F039
  • H01L29/14
    		•  ...Inorganic materials [2] HB CC 5F039
  • H01L29/16
    		•  ....including, apart from doping materials or other impurities, only elements of Group IV of the PeriodicTable? in uncombined form[2006.01] HB CC 5F039
  • H01L29/161
    		•  .....including two or more of the elements provided for in group H01L 29/16 [2] HB CC 5F039
  • H01L29/163
    		•  ......in the same semiconductor region [2] HB CC 5F039
  • H01L29/165
    		•  ......in different semiconductor regions [2] HB CC 5F039
  • H01L29/167
    		•  .....further characterised by the doping material [2] HB CC 5F039
  • H01L29/18
    		•  ....Selenium or tellurium only, apart from doping materials or other impurities [2] HB CC 5F039
  • H01L29/20
    		•  ....including, apart from doping materials or other impurities, only AIIIBV compounds [2] HB CC 5F039
  • H01L29/201
    		•  .....including two or more compounds [2] HB CC 5F039
  • H01L29/203
    		•  ......in the same semiconductor region [2] HB CC 5F039
  • H01L29/205
    		•  ......in different semiconductor regions [2] HB CC 5F039
  • H01L29/207
    		•  .....further characterised by the doping material [2] HB CC 5F039
  • H01L29/22
    		•  ....including, apart from doping materials or other impurities, only AIIBVI compounds [2] HB CC 5F039
  • H01L29/221
    		•  .....including two or more compounds [2] HB CC 5F039
  • H01L29/223
    		•  ......in the same semiconductor region [2] HB CC 5F039
  • H01L29/225
    		•  ......in different semiconductor regions [2] HB CC 5F039
  • H01L29/227
    		•  .....further characterised by the doping material [2] HB CC 5F039
  • H01L29/24
    		•  ....including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups H01L 29/16, H01L 29/18, H01L 29/20or H01L 29/22 [2] HB CC 5F039
  • H01L29/26
    		•  ....including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L 29/16, H01L 29/18, H01L 29/20, H01L 29/22, H01L 29/24 [2] HB CC 5F039
  • H01L29/263
    		•  .....in the same semiconductor region [2] HB CC 5F039
  • H01L29/267
    		•  .....in different semiconductor regions [2] HB CC 5F039
  • H01L29/30
    		•  ..characterised by physical imperfections; having polished or roughened surface [2] HB CC 5F039
  • H01L29/32
    		•  ...the imperfections being within the semiconductor body [2] HB CC 5F039
  • H01L29/34
    		•  ...the imperfections being on the surface [2] HB CC 5F039
  • H01L29/36
    		•  ..characterised by the concentration or distribution of impurities [2] HB CC 5F039
  • H01L29/38
    		•  ..characterised by combination of features provided for in two or more of the groups H01L 29/04, H01L 29/06, H01L 29/12, H01L 29/30, H01L 29/36 [2] HB CC 5F039
  • H01L29/40
    		•  .Electrodes [2] HB CC 4M104
  • H01L29/42
    		•  ..carrying the current to be rectified, amplified, or switched and such electrodes being part of a semiconductor device which comprises one or two electrodes [2] HB CC 4M104
  • H01L29/44
    		•  ...characterised by their shapes, relative sizes, or dispositions [2] HB CC 4M104
  • H01L29/44@L
    		•  Arrangment of electrodes HB CC 4M104
  • H01L29/44@P
    		•  Electrode planar shape HB CC 4M104
  • H01L29/44@S
    		•  Electrode cross-sectional shape HB CC 4M104
  • H01L29/44@Y
    		•  Special functions of electrodes, e.g. field plates HB CC 4M104
  • H01L29/44@Z
    		•  Others HB CC 4M104
  • H01L29/46
    		•  ...characterised by the materials of which they are formed [2] HB CC 4M104
  • H01L29/48
    		•  ...for surface barrier, e.g. Schottky barrier [2] HB CC 4M104
  • H01L29/48@F
    		•  Element structure HB CC 4M104
  • H01L29/48@P
    		•  Element manufacturing methods HB CC 4M104
  • H01L29/48@M
    		•  having limited materials for Schottky electrodes HB CC 4M104
  • H01L29/48@E
    		•  Perimeter effect relief HB CC 4M104
  • H01L29/48@D
    		•  Semiconductor bodies made of non-silicon materials HB CC 4M104
  • H01L29/48@Z
    		•  Others HB CC 4M104
  • H01L29/50
    		•  ..carrying the current to be rectified, amplified, or switched and such electrodes being part of a semiconductor device which comprises three or more electrodes [2] HB CC 4M104
  • H01L29/50@B
    		•  for bipolar transistors HB CC 4M104
  • H01L29/50@M
    		•  for MIS or MOS transistors HB CC 4M104
  • H01L29/50@J
    		•  for junction or MES types HB CC 4M104
  • H01L29/50@Z
    		•  Others HB CC 4M104
  • H01L29/52
    		•  ...characterised by their shapes, relative sizes, or dispositions [2] HB CC 4M104
  • H01L29/54
    		•  ...characterised by the materials of which they are formed [2] HB CC 4M104
  • H01L29/56
    		•  ...for surface barrier, e.g. Schottky barrier [2] HB CC 4M104
  • H01L29/58
    		•  ..not carrying the current to be rectified, amplified, or switched and such electrodes being part of a semiconductor device which comprises three or more electrodes [2] HB CC 4M104
  • H01L29/58@G
    		•  for MIS or MOS gates HB CC 4M104
  • H01L29/58@Z
    		•  Ohters HB CC 4M104
  • H01L29/60
    		•  ...characterised by their shapes, relative sizes, or dispositions [2] HB CC 4M104
  • H01L29/62
    		•  ...characterised by the material of which they are formed [2] HB CC 4M104
  • H01L29/64
    		•  ...for surface barrier, e.g. Schottky barrier [2] HB CC 4M104
  • H01L29/66
    		•  .Types of semiconductor device [2] HB CC 5F086
  • H01L29/66@S
    		•  Using single electron tunneling [Coulomb Blockade effect] HB CC 5F086
  • H01L29/66@U
    		•  .Characterized by integration, circuit configuration HB CC 5F086
  • H01L29/66@T
    		•  Using tunneling effect [except S] HB CC 5F086
  • H01L29/66@E
    		•  Electron emitting element, field emitting element [cold cathode] HB CC 5F086
  • H01L29/66@C
    		•  Characterized by control method HB CC 5F086
  • H01L29/66@L
    		•  .Using light HB CC 5F086
  • H01L29/66@M
    		•  .Using magnetic field HB CC 5F086
  • H01L29/66@Z
    		•  Others HB CC 5F086
  • H01L29/68
    		•  ..controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched (H01L 29/96 takes precedence) [2] HB CC 5F003
  • H01L29/70
    		•  ...Bipolar devices [2] HB CC 5F003
  • H01L29/72
    		•  ....Transistor-type devices, i.e. able to continuously respond to applied control signals [2] HB CC 5F003
  • H01L29/72@S
    		•  Self-align bipolar transistor [SST, SEBT, etc.] HB CC 5F003
  • H01L29/72@P
    		•  Planer bipolar transistor [vertical type] HB CC 5F003
  • H01L29/72@H
    		•  Heterojunction bipolar transistor HB CC 5F003
  • H01L29/72@Z
    		•  Others HB CC 5F003
  • H01L29/74
    		•  ....Thyristor-type devices, e.g. having four-zone regenerative action [2] HB CC 5F005
  • H01L29/74@A
    		•  Emitter short-circuit structure HB CC 5F005
  • H01L29/74@B
    		•  Surface structures [such as passivation, guard rings, and slots] HB CC 5F005
  • H01L29/74@V
    		•  .Having inclined faces [bevels] (H11 newly provided) HB CC 5F005
  • H01L29/74@W
    		•  .Flat face patterns [such as multi-island shape emitters, comb teeth form electrodes] (H11 newly provided) HB CC 5F005
  • H01L29/74@C
    		•  GTO and T off compaction HB CC 5F005
  • H01L29/74@D
    		•  Ton characteristics and gate structures HB CC 5F005
  • H01L29/74@X
    		•  .Trench gates, slit gates (H11 newly provided) HB CC 5F005
  • H01L29/74@Y
    		•  .Double-faced gates (H11 newly provided) HB CC 5F005
  • H01L29/74@E
    		•  sensitizing and luminescent thyristors HB CC 5F005
  • H01L29/74@F
    		•  PNPN in general HB CC 5F005
  • H01L29/74@G
    		•  Planared and integrated circuited HB CC 5F005
  • H01L29/74@H
    		•  Reverse conducting thyristors HB CC 5F005
  • H01L29/74@J
    		•  Thyristor electrode structure HB CC 5F005
  • H01L29/74@L
    		•  Supports HB CC 5F005
  • H01L29/74@M
    		•  Static electricity conduction thyristors HB CC 5F005
  • H01L29/74@P
    		•  External elements HB CC 5F005
  • H01L29/74@Q
    		•  Thyristor manufacturing methods [excluding multi-level processes] HB CC 5F005
  • H01L29/74@R
    		•  Thermo-sensitive thyristors HB CC 5F005
  • H01L29/74@S
    		•  Pressure-sensitive thyristors HB CC 5F005
  • H01L29/74@T
    		•  Magnetism-sensitive thyristors HB CC 5F005
  • H01L29/74@U
    		•  Thyristors in general HB CC 5F005
  • H01L29/74@Z
    		•  Others HB CC 5F005
  • H01L29/74,301
    		•  .....Multi-stage processes for thyristor manufacturing HB CC 5F005
  • H01L29/74,601
    		•  .....using FET (field effect transistors) [e.g. MCT: MOS controlled thyristors] (H11 newly provided) HB CC 5F005
  • H01L29/74,601@A
    		•  using MOSFET [e.g. MCT: MOS controlled thyristors] (H11 newly provided) HB CC 5F005
  • H01L29/74,601@B
    		•  using conductivity modulation [IGB mode] [e.g. EST: emitter switched thyristors] (H11 newly established) HB CC 5F005
  • H01L29/74,601@C
    		•  using plural differing conductive FET [e.g. BRT: base resistance thyristors] (H11 newly provided) HB CC 5F005
  • H01L29/74,601@Z
    		•  Others (H11 newly provided) HB CC 5F005
  • H01L29/743
    		•  .....Reverse blocking thyristors [2] HB CC 5F005
  • H01L29/747
    		•  .....Bidirectional devices, e.g. triacs [2] HB CC 5F005
  • H01L29/747,301
    		•  ......Multi-stage processes for two-way thyristor manufacturing HB CC 5F005
  • H01L29/76
    		•  ...Unipolar devices [2] HB CC 5F140
  • H01L29/76,301
    		•  ....Devices for charge transfer HB CC 4M118
  • H01L29/76,301@D
    		•  Structure HB CC 4M118
  • H01L29/76,301@A
    		•  .Transfer parts HB CC 4M118
  • H01L29/76,301@B
    		•  ..Drive circuits HB CC 4M118
  • H01L29/76,301@C
    		•  .Power input parts, power output parts, and remodeling parts [including drive] HB CC 4M118
  • H01L29/76,301@E
    		•  Applied elements [not coveredby F to J] HB CC 4M118
  • H01L29/76,301@F
    		•  .Shift registers, delay lines HB CC 4M118
  • H01L29/76,301@G
    		•  .Memory devices HB CC 4M118
  • H01L29/76,301@H
    		•  .Filters HB CC 4M118
  • H01L29/76,301@J
    		•  .image pickup elements HB CC 4M118
  • H01L29/76,301@K
    		•  using ultrasonic drives HB CC 4M118
  • H01L29/76,301@L
    		•  Bucket brigade elements HB CC 4M118
  • H01L29/76,301@Z
    		•  Others HB CC 4M118
  • H01L29/78
    		•  ....with field effect produced by an insulated gate [2] HB CC 5F140
  • H01L29/78,301
    		•  .....Insulated gate effect transistors, e.g. MOSFET HB CC 5F140
  • H01L29/78,301@B
    		•  using compound semiconductors HB CC 5F140
  • H01L29/78,301@C
    		•  used for MOSIC HB CC 5F140
  • H01L29/78,301@D
    		•  DSA and MOS HB CC 5F140
  • H01L29/78,301@E
    		•  characterized by circuit structure only HB CC 5F140
  • H01L29/78,301@F
    		•  characterized by a single process only HB CC 5F140
  • H01L29/78,301@G
    		•  characterized by gate electrode structure only HB CC 5F140
  • H01L29/78,301@H
    		•  characterized by channel structure only HB CC 5F140
  • H01L29/78,301@J
    		•  especially characterized by operation HB CC 5F140
  • H01L29/78,301@K
    		•  Devices for protection HB CC 5F140
  • H01L29/78,301@L
    		•  LDD HB CC 5F140
  • H01L29/78,301@M
    		•  used with memory, e.g. dRAM cells HB CC 5F140
  • H01L29/78,301@N
    		•  characterised by passivation structure only HB CC 5F140
  • H01L29/78,301@P
    		•  MOS process [characterised only by any one of source and drain area formation, self-alignment or electrode formation] HB CC 5F140
  • H01L29/78,301@Q
    		•  characterized by crystal orientation selection only HB CC 5F140
  • H01L29/78,301@R
    		•  characterized by separation region only HB CC 5F140
  • H01L29/78,301@S
    		•  characterized by source drain region only HB CC 5F140
  • H01L29/78,301@T
    		•  testing and measuring HB CC 5F140
  • H01L29/78,301@U
    		•  IS and FET HB CC 5F140
  • H01L29/78,301@V
    		•  having slot gates HB CC 5F140
  • H01L29/78,301@W
    		•  Power and MOS [paralleled] HB CC 5F140
  • H01L29/78,301@X
    		•  Other MOS structure HB CC 5F140
  • H01L29/78,301@Y
    		•  Other MOS processes HB CC 5F140
  • H01L29/78,301@Z
    		•  Others [characterized by both structure and processes] HB CC 5F140
  • H01L29/78,371
    		•  ......Semiconductor fixed memory devices HB CC 5F101
  • H01L29/78,611
    		•  ......Thin film transistors HB CC 5F110
  • H01L29/78,612
    		•  .......used for active matrixes [characterised by thin film transistor simple structures] HB CC 5F110
  • H01L29/78,612@A
    		•  Defect prevention and correction HB CC 5F110
  • H01L29/78,612@B
    		•  including drive parts HB CC 5F110
  • H01L29/78,612@C
    		•  characterized by wiring HB CC 5F110
  • H01L29/78,612@D
    		•  characterized by patterning HB CC 5F110
  • H01L29/78,612@Z
    		•  Others HB CC 5F110
  • H01L29/78,613
    		•  .......using MOSIC HB CC 5F110
  • H01L29/78,613@A
    		•  CMOS HB CC 5F110
  • H01L29/78,613@B
    		•  Memory HB CC 5F110
  • H01L29/78,613@Z
    		•  Others HB CC 5F110
  • H01L29/78,614
    		•  .......characterized by circuit construction, e.g. active matrix bodies HB CC 5F110
  • H01L29/78,615
    		•  .......SOS HB CC 5F110
  • H01L29/78,616
    		•  .......characterized by source drains HB CC 5F110
  • H01L29/78,616@A
    		•  LDD [characterized by structure and construction methods] HB CC 5F110
  • H01L29/78,616@J
    		•  characterized by source drain formation methods HB CC 5F110
  • H01L29/78,616@K
    		•  .characterized by source drain electrode formation methods HB CC 5F110
  • H01L29/78,616@L
    		•  .characterized by source drain regions formation methods HB CC 5F110
  • H01L29/78,616@M
    		•  ..Self-alignment HB CC 5F110
  • H01L29/78,616@N
    		•  ...using exposure from surfaces HB CC 5F110
  • H01L29/78,616@S
    		•  characterized by source drain regions and electrode structures HB CC 5F110
  • H01L29/78,616@T
    		•  .characterized by shape HB CC 5F110
  • H01L29/78,616@U
    		•  .multiple layers HB CC 5F110
  • H01L29/78,616@V
    		•  .characterized by materials, impurity concentration, etc. HB CC 5F110
  • H01L29/78,616@Z
    		•  Others HB CC 5F110
  • H01L29/78,617
    		•  .......characterized by gates HB CC 5F110
  • H01L29/78,617@A
    		•  Offset gates [characterized by structure and construction methods] HB CC 5F110
  • H01L29/78,617@J
    		•  characterized by gate electrodes HB CC 5F110
  • H01L29/78,617@K
    		•  .characterized by shape HB CC 5F110
  • H01L29/78,617@L
    		•  .Plural layers HB CC 5F110
  • H01L29/78,617@M
    		•  .characterized by materials, impurity concentration, etc. HB CC 5F110
  • H01L29/78,617@N
    		•  .having plural gate electrodes HB CC 5F110
  • H01L29/78,617@S
    		•  characterized by gate insulation film HB CC 5F110
  • H01L29/78,617@T
    		•  .characterized by material HB CC 5F110
  • H01L29/78,617@U
    		•  .Plural layers HB CC 5F110
  • H01L29/78,617@V
    		•  .characterized by formation methods HB CC 5F110
  • H01L29/78,617@W
    		•  ..using anodizing methods HB CC 5F110
  • H01L29/78,617@Z
    		•  Others HB CC 5F110
  • H01L29/78,618
    		•  .......characterized by channel (semiconductor layer) HB CC 5F110
  • H01L29/78,618@A
    		•  characterized by sedimentation method HB CC 5F110
  • H01L29/78,618@B
    		•  using compound semiconductors HB CC 5F110
  • H01L29/78,618@C
    		•  characterized by shape HB CC 5F110
  • H01L29/78,618@D
    		•  .thin filmed HB CC 5F110
  • H01L29/78,618@E
    		•  Plural layers HB CC 5F110
  • H01L29/78,618@F
    		•  characterized by impurities and impurity concentration HB CC 5F110
  • H01L29/78,618@G
    		•  .including impurities which will not be carriers HB CC 5F110
  • H01L29/78,618@Z
    		•  Others HB CC 5F110
  • H01L29/78,619
    		•  .......characterized by passivation structure HB CC 5F110
  • H01L29/78,619@A
    		•  characterized by film structure HB CC 5F110
  • H01L29/78,619@B
    		•  characterized by shading films HB CC 5F110
  • H01L29/78,619@Z
    		•  Others HB CC 5F110
  • H01L29/78,620
    		•  .......characterized by crystal orientation selection HB CC 5F110
  • H01L29/78,621
    		•  .......characterized by separation region HB CC 5F110
  • H01L29/78,622
    		•  .......especially characterized by operation HB CC 5F110
  • H01L29/78,623
    		•  .......protection (devices and circuits) HB CC 5F110
  • H01L29/78,623@A
    		•  Static electricity destruction prevention, e.g. during ion injection and labeling HB CC 5F110
  • H01L29/78,623@Z
    		•  Others HB CC 5F110
  • H01L29/78,624
    		•  .......Testing and measuring HB CC 5F110
  • H01L29/78,625
    		•  .......IS and FET HB CC 5F110
  • H01L29/78,626
    		•  .......Other structures HB CC 5F110
  • H01L29/78,626@A
    		•  Vertical structures HB CC 5F110
  • H01L29/78,626@B
    		•  Kink prevention HB CC 5F110
  • H01L29/78,626@C
    		•  characterized by substrate HB CC 5F110
  • H01L29/78,626@Z
    		•  Others HB CC 5F110
  • H01L29/78,627
    		•  .......Other processes HB CC 5F110
  • H01L29/78,627@A
    		•  Flattening HB CC 5F110
  • H01L29/78,627@B
    		•  Serial formation HB CC 5F110
  • H01L29/78,627@C
    		•  characterized by patterning HB CC 5F110
  • H01L29/78,627@D
    		•  Pasting HB CC 5F110
  • H01L29/78,627@E
    		•  undergoing hydrogenation HB CC 5F110
  • H01L29/78,627@F
    		•  Annealing HB CC 5F110
  • H01L29/78,627@G
    		•  .re-crystallization and single crystallization HB CC 5F110
  • H01L29/78,627@Z
    		•  Others HB CC 5F110
  • H01L29/78,651
    		•  ......Vertical transistors HB CC 5F111
  • H01L29/78,652
    		•  .......mainly characterized by structure HB CC 5F111
  • H01L29/78,652@A
    		•  characterized by transistor cells HB CC 5F111
  • H01L29/78,652@B
    		•  .Source regions HB CC 5F111
  • H01L29/78,652@C
    		•  .Base regions [body regions] HB CC 5F111
  • H01L29/78,652@D
    		•  ..High concentration (low resistance) parts HB CC 5F111
  • H01L29/78,652@E
    		•  ..Channel parts HB CC 5F111
  • H01L29/78,652@F
    		•  .Plane shapes or layout patterns of regions of impurities composed of cells HB CC 5F111
  • H01L29/78,652@G
    		•  characterized by drain regions HB CC 5F111
  • H01L29/78,652@H
    		•  .High resistance drift layers HB CC 5F111
  • H01L29/78,652@J
    		•  ..Surfaces comprised of regions and layers of impurities HB CC 5F111
  • H01L29/78,652@K
    		•  MOS gates including electrodes, insulation films or shield structures HB CC 5F111
  • H01L29/78,652@L
    		•  characterized by electrodes HB CC 5F111
  • H01L29/78,652@M
    		•  .source electrodes HB CC 5F111
  • H01L29/78,652@N
    		•  Chip peripheries or entire chip HB CC 5F111
  • H01L29/78,652@P
    		•  .Girdling or field plates HB CC 5F111
  • H01L29/78,652@Q
    		•  .Related fingers, bonding pads or bonding HB CC 5F111
  • H01L29/78,652@R
    		•  .Separation regions HB CC 5F111
  • H01L29/78,652@S
    		•  .Plane shapes or layout patterns of a plurality of transistors HB CC 5F111
  • H01L29/78,652@T
    		•  characterized by construction materials of substrates, etc., e.g. using compound semiconductors HB CC 5F111
  • H01L29/78,652@Z
    		•  Others HB CC 5F111
  • H01L29/78,653
    		•  ........having gates that are not planar HB CC 5F111
  • H01L29/78,653@A
    		•  having gates formed in internal grooves, e.g. V-grooved (VMOS) shape or trench gate (UMOS) HB CC 5F111
  • H01L29/78,653@B
    		•  .having channel or source (drain) layers formed in internal grooves (see also H01L29/78 and 301V) HB CC 5F111
  • H01L29/78,653@C
    		•  having recessed gates HB CC 5F111
  • H01L29/78,653@D
    		•  using SOI an SIMOX techniques HB CC 5F111
  • H01L29/78,653@Z
    		•  Others HB CC 5F111
  • H01L29/78,654
    		•  ........characterized by operation HB CC 5F111
  • H01L29/78,654@A
    		•  applying bias in base regions HB CC 5F111
  • H01L29/78,654@B
    		•  having minority carrier injection regions HB CC 5F111
  • H01L29/78,654@C
    		•  MOS type SIT HB CC 5F111
  • H01L29/78,654@Z
    		•  Others HB CC 5F111
  • H01L29/78,655
    		•  .........Insulation gate bipolar transistors (IGBT) HB CC 5F111
  • H01L29/78,655@A
    		•  characterized by transistor cells, etc. HB CC 5F111
  • H01L29/78,655@B
    		•  characterised by buffer layers HB CC 5F111
  • H01L29/78,655@C
    		•  characterised by anode regions HB CC 5F111
  • H01L29/78,655@D
    		•  .Anode short-circuiting type HB CC 5F111
  • H01L29/78,655@E
    		•  adding region for carrier withdrawal HB CC 5F111
  • H01L29/78,655@F
    		•  characterised by chip peripheries or entire chip HB CC 5F111
  • H01L29/78,655@G
    		•  .Plane shapes or layout patterns of a plurality of transistors HB CC 5F111
  • H01L29/78,655@Z
    		•  Others HB CC 5F111
  • H01L29/78,656
    		•  .......combined with other transistors or other power elements HB CC 5F111
  • H01L29/78,656@A
    		•  Combinations with vertical transistors, e.g. H bridges HB CC 5F111
  • H01L29/78,656@B
    		•  Combinations with horizontal transistors HB CC 5F111
  • H01L29/78,656@C
    		•  .Combinations with MOS integrated circuits, e.g. power IC (MOSIC27/08) HB CC 5F111
  • H01L29/78,656@D
    		•  ..mainly characterized by structure HB CC 5F111
  • H01L29/78,656@E
    		•  ...Isolation regions between powers and controls HB CC 5F111
  • H01L29/78,656@F
    		•  ...Layout patterns of powers and controls HB CC 5F111
  • H01L29/78,656@G
    		•  ..mainly characterized by manufacturing methods HB CC 5F111
  • H01L29/78,656@Z
    		•  Others HB CC 5F111
  • H01L29/78,657
    		•  .......having built-in elements and circuits for protection HB CC 5F111
  • H01L29/78,657@A
    		•  Diodes HB CC 5F111
  • H01L29/78,657@B
    		•  .Gate protection diodes HB CC 5F111
  • H01L29/78,657@C
    		•  ..having SOI construction HB CC 5F111
  • H01L29/78,657@D
    		•  .Circulating diodes having regions independent from transistor cells HB CC 5F111
  • H01L29/78,657@E
    		•  Transistors HB CC 5F111
  • H01L29/78,657@F
    		•  .Transistor cells for operation condition detection HB CC 5F111
  • H01L29/78,657@G
    		•  characterized by circuit structure HB CC 5F111
  • H01L29/78,657@Z
    		•  Others HB CC 5F111
  • H01L29/78,658
    		•  .......characterized by manufacturing methods HB CC 5F111
  • H01L29/78,658@A
    		•  formation processes for regions of impure materials HB CC 5F111
  • H01L29/78,658@B
    		•  .Self-aligning diffusion HB CC 5F111
  • H01L29/78,658@C
    		•  ..Position control of base well centres HB CC 5F111
  • H01L29/78,658@D
    		•  ..Position control of gate electrode ends, e.g. side wall oxidation HB CC 5F111
  • H01L29/78,658@E
    		•  Growth processes for impurity layers HB CC 5F111
  • H01L29/78,658@F
    		•  Formation processes for insulation and conduction layers on substrate surfaces HB CC 5F111
  • H01L29/78,658@G
    		•  Etching HB CC 5F111
  • H01L29/78,658@H
    		•  Lifetime control HB CC 5F111
  • H01L29/78,658@J
    		•  Passivation HB CC 5F111
  • H01L29/78,658@K
    		•  Wafer stress HB CC 5F111
  • H01L29/78,658@L
    		•  Testing, measuring or simulation technologies HB CC 5F111
  • H01L29/78,658@Z
    		•  Others HB CC 5F111
  • H01L29/80
    		•  ....with field effect produced by a PN or other rectifying junction gate [2] HB CC 5F102
  • H01L29/80@A
    		•  Element varieties HB CC 5F102
  • H01L29/80@B
    		•  .MES type FET HB CC 5F102
  • H01L29/80@F
    		•  ..characterized by electrode form HB CC 5F102
  • H01L29/80@K
    		•  ...Oblique vapour deposition HB CC 5F102
  • H01L29/80@L
    		•  ...Electrode planar construction HB CC 5F102
  • H01L29/80@M
    		•  ...Gate electrode materials HB CC 5F102
  • H01L29/80@U
    		•  ...Reverse surface electrode removal HB CC 5F102
  • H01L29/80@Q
    		•  ..Having high resistance layers on obverse surfaces HB CC 5F102
  • H01L29/80@R
    		•  ..having integration with matching and feedback circuits, etc. HB CC 5F102
  • H01L29/80@G
    		•  ..Mounting HB CC 5F102
  • H01L29/80@E
    		•  ..Lamination HB CC 5F102
  • H01L29/80@H
    		•  ..using Modulation-doped heterozygosis joining HB CC 5F102
  • H01L29/80@C
    		•  .PN junction gate type FET HB CC 5F102
  • H01L29/80@S
    		•  .Horizontal SIT HB CC 5F102
  • H01L29/80@V
    		•  .Vertical FET HB CC 5F102
  • H01L29/80@W
    		•  having dual gate construction HB CC 5F102
  • H01L29/80@P
    		•  having functions for protection HB CC 5F102
  • H01L29/80@Z
    		•  Others HB CC 5F102
  • H01L29/82
    		•  ..controllable only by variation of the magnetic field applied to the device [2] HB CC 5F092
  • H01L29/82@D
    		•  SMD HB CC 5F092
  • H01L29/82@T
    		•  SMT HB CC 5F092
  • H01L29/82@Z
    		•  Others HB CC 5F092
  • H01L29/84
    		•  ..controllable only by variation of applied mechanical force, e.g. of pressure [2] HB CC 4M112
  • H01L29/84@A
    		•  Mechanical force -electric conversion HB CC 4M112
  • H01L29/84@B
    		•  .Silicon diaphragms HB CC 4M112
  • H01L29/84@C
    		•  .Pressure-sensitive FET HB CC 4M112
  • H01L29/84@D
    		•  .Pressure-sensitive diodes HB CC 4M112
  • H01L29/84@E
    		•  .Neck type decompression thyristors HB CC 4M112
  • H01L29/84@F
    		•  .Decompression transistors HB CC 4M112
  • H01L29/84@G
    		•  .Pressurization mechanisms HB CC 4M112
  • H01L29/84@H
    		•  .SnO2: having a deep level HB CC 4M112
  • H01L29/84@J
    		•  .Ultrasonic wave conversion HB CC 4M112
  • H01L29/84@Z
    		•  Others HB CC 4M112
  • H01L29/86
    		•  ..controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched (H01L 29/96 takes precedence) [2] HB CC 5F087
  • H01L29/86@A
    		•  using simple crystals HB CC 5F087
  • H01L29/86@F
    		•  using insulation layers HB CC 5F087
  • H01L29/86@S
    		•  using superlattices HB CC 5F087
  • H01L29/86@Z
    		•  Others HB CC 5F087
  • H01L29/86,301
    		•  ...Schottky diode HB CC 5F087
  • H01L29/86,301@F
    		•  structure of element HB CC 5F087
  • H01L29/86,301@P
    		•  manufacturing method of element HB CC 5F087
  • H01L29/86,301@M
    		•  materials for electrode for Schottky is limited HB CC 5F087
  • H01L29/86,301@E
    		•  easing of border effect HB CC 5F087
  • H01L29/86,301@D
    		•  main body of semiconductor is composed of materials other than silicon HB CC 5F087
  • H01L29/86,301@Z
    		•  Others HB CC 5F087
  • H01L29/88
    		•  ...Tunnel-effect diodes [2] HB CC 5F087
  • H01L29/88@F
    		•  using insulation layers HB CC 5F087
  • H01L29/88@S
    		•  using superlattices HB CC 5F087
  • H01L29/88@Z
    		•  Others HB CC 5F087
  • H01L29/90
    		•  ...Breakdown diodes, e.g. Zener diodes, avalanche diodes [2] HB CC 5F087
  • H01L29/90@D
    		•  Zener diodes HB CC 5F087
  • H01L29/90@S
    		•  .having dual natures HB CC 5F087
  • H01L29/90@C
    		•  .having temperature compensation HB CC 5F087
  • H01L29/90@P
    		•  Punch-through type constant voltage diodes HB CC 5F087
  • H01L29/90@T
    		•  Transit-time effect elements HB CC 5F087
  • H01L29/90@Z
    		•  Others HB CC 5F087
  • H01L29/91
    		•  ...Rectifier diodes [2] HB CC 5F087
  • H01L29/91@A
    		•  characterized by manufacturing processes HB CC 5F087
  • H01L29/91@B
    		•  .made resistant to high pressure HB CC 5F087
  • H01L29/91@C
    		•  characterized by structure HB CC 5F087
  • H01L29/91@D
    		•  .made resistant to high pressure HB CC 5F087
  • H01L29/91@E
    		•  having semiconductor bodies comprised of non-single crystals HB CC 5F087
  • H01L29/91@F
    		•  for use with semi-conductor bodies other than silicon HB CC 5F087
  • H01L29/91@G
    		•  .semiconductor bodies comprised of organic materials HB CC 5F087
  • H01L29/91@H
    		•  using heterozygosis junction HB CC 5F087
  • H01L29/91@J
    		•  related to lifetime killers HB CC 5F087
  • H01L29/91@K
    		•  related to combinations of plural diodes HB CC 5F087
  • H01L29/91@L
    		•  related to lamination HB CC 5F087
  • H01L29/91@Z
    		•  Others HB CC 5F087
  • H01L29/92
    		•  ...Capacitors having potential barriers?[2006.01] HB CC 5F087
  • H01L29/92@C
    		•  Plural condensers HB CC 5F087
  • H01L29/92@Z
    		•  Others HB CC 5F087
  • H01L29/93
    		•  ....Variable-capacitance diodes, e.g. varactors [2] HB CC 5F087
  • H01L29/93@H
    		•  using hyperabrupt junction HB CC 5F087
  • H01L29/93@S
    		•  using Schottky-barrier diodes HB CC 5F087
  • H01L29/93@C
    		•  other electric means added to capacity controls HB CC 5F087
  • H01L29/93@Z
    		•  Others HB CC 5F087
  • H01L29/94
    		•  ....Metal-insulator-semiconductors, e.g. MOS [2] HB CC 5F087
  • H01L29/94@C
    		•  other electric means added to capacity controls HB CC 5F087
  • H01L29/94@Z
    		•  Others HB CC 5F087
  • H01L29/95
    		•  ....Ceramic barrier-layer capacitors (ceramic capacitors in general H01G) [2] HB CC 5F087
  • H01L29/96
    		•  ..of a type covered by more than one of groups H01L 29/68, H01L 29/82, H01L 29/84 or H01L 29/86 [2] HB CC 5F087
    TOP