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5F140 Insulated gate type field-effect transistor
H10D30/00 ;30/01,101-30/01,101@Z;30/60-30/65;48/36
H01L29/78-29/78,301@Z AA AA00
PURPOSES* 		AA01 AA02 AA03 AA04 AA05 AA06 AA07 AA08 AA09 AA10
. Frequency characteristics . Power reduction . Noise reduction . Change of electric characteristics (Input and output characteristics) . Improvement of transconductances . Stabilization of threshold voltages . Improvement in temperature characteristics . Elimination, prevention of internal strains . Improvement of radiation resistance characteristics . Reducing resistances of source, drain electrode parts
AA11 AA12 AA13 AA14 AA15 AA16 AA17 AA18 AA19 AA20
. Reduction of capacitances between gate and SD regions . Reduction of junction capacitances of SD regions . Reduction of junction depth . Prevention of short-circuit . Surface flattening, prevention of step cut . Prevention of parasitic MOSs . Parasitic bipolar, latch-up prevention . Prevention of punch-through . Improvement of withstanding voltages of gate insulating films . Prevention of breakdown of drain junctions, source junctions
AA21 AA22 AA23 AA24 AA25 AA26 AA27 AA28 AA29 AA30
. Measures against short channel effects . Measures against narrow channel effects . Measures against hot carrier, hot electron effects . Prevention of leaks, leakage currents . Improving withstanding voltages . Prevention of etching damages . Prevention of ion implantation damages . Penetration, channeling prevention . Providing large currents . . Reducing ON resistances
AA31 AA32 AA33 AA34 AA36 AA37 AA38 AA39 AA40
. Measures against surge inputs . Measures against surge outputs . Prevention of excess currents . Protection from heat . Improvement of mounting structures . Testing, measuring, inspection (Monitor elements) . Measures against ESDs . Increasing fineness . Simplification of steps
AB AB00
COMPOSITES (CIRCUIT ELEMENTS) 		AB01 AB02 AB03 AB04 AB05 AB06 AB07 AB08 AB09 AB10
. MOSICs, MISICs . . Constructing E/EMOS or E/DMOS . . Constructing CMOSs . Parallel operations . Three-dimensional elements . Diodes . Bipolar transistors . J-FETs . C (Capacitors) . R (Resistors)
AC AC00
OPERATIONS, APPLICATIONS AND ELEMENT STRUCTURES 		AC01 AC02 AC04 AC06 AC07 AC09 AC10
. Pch transistors . Depletion layer control type (Depression type) . SITs . Electromagnetic waves (light) . Operations at the temperature other than normal temperatures . Voltage application . . DTMOSs
AC11 AC12 AC13 AC14 AC16 AC18 AC19 AC20
. Quantum effect elements . . Tunnel transistors . . . By PN junctions . . . By insulating films . Other special operations (Punch-through Tr and magnetism)* . Dual gate MOSs, quadrupole MOSs . BOMOSs (Buried oxide layer MOSs) . Single electron elements
AC21 AC22 AC23 AC24 AC26 AC28 AC30
. Horizontal type DMOSs, DSAs (Double diffusion Tr) . Horizontal type IGBTs . Vertical type transistors (Vertical type DMOSs or the like) . . Vertical type IGBTs . Forming continuous recesses and projections on surfaces . Using strains . Element arrangements
AC31 AC32 AC33 AC36 AC37 AC38 AC39 AC40
. Application . . Memories . . Logic circuits . Thin film transistors, TFTs, SOIs, SOSs . Ion-sensitive field-effect Trs, ion sensors . CCDs . MOS diodes, MOS capacitors . MOS thyristors
BA BA00
SUBSTRATE MATERIALS 		BA01 BA02 BA03 BA04 BA05 BA06 BA07 BA08 BA09 BA10
. IV group . . SiC . . Ge . . Diamond . . SiGe . III-V group* . . GaAs . . InP . . Ternary and more* . II-VI group*
BA11 BA12 BA13 BA16 BA17 BA18 BA20
. Superconducting materials* . Non-single crystal semiconductor materials* . . Polycrystals, polysilicon . Epitaxial substrates . . Compound semiconductor growth on Si substrates . Organic semiconductors* . Selection of crystallographic axes, plane orientation
BB BB00
CHANNEL STRUCTURE 		BB01 BB02 BB03 BB04 BB05 BB06 BB09 BB10
. Channel shapes, arrangements . . Channels not parallel to substrate surfaces . . . Formed in step parts . . . . VSVCs (Vertical surface vertical currents) . . . . VSHCs (Vertical surface horizontal currents) . . Channels separated from substrate surfaces . Positive application of short channel effects . Positive application of narrow channel effects
BB11 BB12 BB13 BB15 BB16 BB18 BB19
. Impurity profile of channel parts . . Planar distributions . . Cross-sectional distributions . . Characterized by impurity materials* . . . Impurities not to be n-types nor p-types* . Superlattice structures, heterostructures . . Quantum wires
BC BC00
MANUFACTURE OF CHANNELS 		BC01 BC02 BC05 BC06 BC07 BC08 BC09 BC10
. Relationship with other regions . . Implantation through gates . Impurity introducing methods . . Ion implantation . . . Oblique ion implantation, rotation ion implantation . . Solid phase diffusion . . Compensation diffusion, counter dopes . . Utilization of out-diffusion
BC11 BC12 BC13 BC15 BC17 BC19
. Film formation methods . . Epitaxial growth . . . Selective growth . Etching . Heat treatment . Preprocessing*
BD BD00
GATE INSULATING FILMS 		BD01 BD02 BD04 BD05 BD06 BD07 BD09 BD10
. Two layers* . Three or more layers* . Materials* . . SiO . . . Characterized by materials . . SiN . . SiON (Including oxynitride films, nitrogen oxide films) . . SiN+SiO (Cases of multilayers)
BD11 BD12 BD13 BD14 BD15 BD16 BD17 BD18 BD19 BD20
. . Metal oxide films* . . . TaO . . . Composite metal oxide films* . . Having spaces at least partially . . Nonuniformity of materials, nonuniformity of impurity distributions . . Distributions of two or more kinds of composing materials . Containing impurities* . Cross-sectional shapes (Nonuniformity of thickness) . . Selective oxidation (mini_Locos) . Characterized by surfaces of uppermost layers (Terminal atoms, dangling hands)
BE BE00
MANUFACTURE OF GATE INSULATING FILMS 		BE01 BE02 BE03 BE05 BE06 BE07 BE08 BE09 BE10
. Processing before forming gate insulating films* . . Cleaning . . Etching* . Processing for forming gate insulating films . . Direct transformation . . . Oxidation . . . Nitridation . . Deposition* . . . CVD
BE11 BE13 BE14 BE15 BE16 BE17 BE18 BE19 BE20
. . Etching* . Processing after forming gate insulating films* . . Etching* . . Ion implantation . . Heat treatment . . . Atmosphere* . Heating methods . . RTP, electron beams . Others*
BF BF00
GATE ELECTRODES 		BF01 BF03 BF04 BF05 BF06 BF07 BF08 BF09 BF10
. Monolayers . Lowermost layer materials* . . Semiconductors* . . Metals* . . . Alloy* . . . High melting point metals* . . . Metal silicides* . . . . Metal silicides composed of two or more kinds* . . . Metal compounds (Nitrides, oxides)*
BF11 BF13 BF14 BF15 BF16 BF17 BF18 BF19 BF20
. Two layers* . Second layer materials* . . Semiconductors* . . Metals* . . . Alloys* . . . High melting point metals* . . . Metal silicides* . . . . Metal silicides composed of two or more kinds* . . . Metal compounds (Nitrides, oxides)*
BF21 BF22 BF23 BF24 BF25 BF26 BF27 BF28 BF29 BF30
. Three layers* . Four or more layers* . Materials of upper layers than third layers* . . Semiconductors* . . Metals* . . . Alloys* . . . High melting point metals* . . . Metal silicides* . . . . Metal silicides composed of two or more kinds* . . . Metal compounds (Nitrides, oxides)*
BF31 BF32 BF33 BF34 BF35 BF37 BF38 BF40
. Structures, states of impurities . . Nonuniformity of materials . . Crystallinity, crystal grain size . . . Amorphous . . Embedding insulating layers . . Impurity distributions . . Characterized by impurity materials* . Being not simple multilayers using two or more kinds
BF41 BF42 BF43 BF44 BF45 BF46 BF47
. Shapes, arrangements . . Cross-sectional shapes . . . Grooved gates . . Formed at step parts . . Embedded gates, embedding under channels . . Serial multiple gates . . Parallel multiple gates
BF51 BF52 BF53 BF54 BF56 BF58 BF59 BF60
. . Plane shapes, arrangements . . . Mesh shapes . . . Comb tooth shapes, divisions . . . Ring shapes . Improvement of mask performances (Including the time of process) . Wiring contact structures to gate electrodes . . With barrier metals . . With contact plugs
BG BG00
MANUFACTURE OF GATE ELECTRODES AND SIDEWALLS 		BG01 BG02 BG03 BG04 BG05 BG07 BG08 BG09 BG10
. Manufacture of gate electrodes using dummy gates . . Dummy gate materials (Resists, polyimides)* . . . Inorganic substances* . . . . Polycrystal Si . . . . SiO . Gate sidewall structures and arrangements . . Gate sidewalls . . Double gate sidewalls* . . Triple or more gate sidewalls*
BG11 BG12 BG13 BG14 BG15 BG16 BG17 BG18 BG19 BG20
. . Gate sidewall materials* . . . SiO . . . PSG, BSG, BPSG . . . SiN . . . Polycrystal Si . . . High melting point metal silicides (Including High melting point metals) . . . Gaps . Gate protective layers at the time of ion implantation (Excluding outermost resists) . . Gate protective materials (Other than gate electrodes)* . . . SiO
BG21 BG22 BG24 BG26 BG27 BG28 BG29 BG30
. . . . PSG, BSG, BPSG . . . SiN . Processing before forming gate electrodes to BE13 and the following . Formation processing of gate electrodes* . . Deposition* . . . CVD . . . . Selective CVD . . . PVD
BG31 BG32 BG33 BG34 BG35 BG36 BG37 BG38 BG39 BG40
. . Introduction of impurities . . . Ion implantation . . Heat treatment . . . Silicidation . . . . Atmospheres . . Methods of forming shapes of gate electrodes* . . . Etching . . . . Dry etching . . . Characterized by etching masks* . . . Polishing and CMP
BG41 BG42 BG43 BG44 BG45 BG46 BG48 BG49 BG50
. Processing after forming gate electrodes* . . Introduction of impurities . . . Ion implantation . . Heat treatment . . Etching . . . Formation of contact holes . Formation methods and removal of gate sidewalls . . Thermal oxidation, thermal nitridation . . . Forming at the parts other than sidewalls at the same time
BG51 BG52 BG53 BG54 BG56 BG57 BG58 BG60
. . Deposition . . . CVD . . Etch back . . Removal of sidewalls . Characterized by heating methods (RTA or the like) . Utilization of differences in oxidation rates . Utilization of differences in etching rates . Others*
BH BH00
SOURCE AND DRAIN REGIONS AND SD VICINITY REGIONS 		BH01 BH02 BH03 BH04 BH05 BH06 BH07 BH08 BH09 BH10
. Shapes, arrangements . . Plane shapes . . . Comb tooth shapes . . . Ring shapes . . Cross-sectional shapes . . . Lifting up SD . . . Bringing down SD (Etched) . . Relationship with contact parts . . Multiple drains . . Multiple sources
BH11 BH12 BH13 BH14 BH15 BH16 BH17 BH18 BH19
. Impurity distributions . . Shapes or arrangements of planar distributions . . Shapes, arrangements of cross-sectional distributions . . . Additional regions (Including extension regions) . . . . LDD (Lightly doped drain_source) . . . . GDD (Graded doped drain) . . . . DDD (Double doped drain) . . . Offset gates . . In connection with contact parts
BH21 BH22 BH25 BH26 BH27 BH28 BH30
. Characterized by impurity materials* . . Not becoming n-types nor p-types* . Embedded drains . Embedded sources . Source, drain materials* . . Polycrystals . Asymmetry of source and drain regions
BH31 BH32 BH33 BH34 BH35 BH36 BH38 BH39 BH40
. SD vicinity regions (Excluding the same conduction types with SD regions) . . Shapes, arrangements (Refer to manuals for the details) . . . Region 1 (Whole) . . . Region 2 (Lower parts) . . . Region 3 (Upper parts) . . . Region 4 (Corner parts) . . . Region 5 (Contacts) . . . Region 6 (Contactless) . . . Region 7 (Separation)
BH41 BH42 BH43 BH45 BH47 BH49 BH50
. . . Formed in SD regions . . Impurity distributions . . Substrate (Well) contact regions . . Regions other than n-type, p-type (Insulating films, i layers or the like) . Asymmetry of regions other than SD regions . Impurity concentrations being specified . Depletion layers being specified
BJ BJ00
SOURCE AND DRAIN ELECTRODES 		BJ01 BJ03 BJ04 BJ05 BJ06 BJ07 BJ08 BJ09 BJ10
. Monolayers . Lowermost layer materials* . . Semiconductors* . . Metals* . . . Alloys* . . . High melting point metals* . . . Metal silicides* . . . . Metal silicides composed of two or more kinds* . . . Metal compounds (Nitrides, oxides)*
BJ11 BJ13 BJ14 BJ15 BJ16 BJ17 BJ18 BJ19 BJ20
. Two or more layers* . Materials of upper layers than second layers* . . Semiconductors* . . Metals* . . . Alloys* . . . High melting point metals* . . . Metal silicides* . . . . Metal silicides composed of two or more kinds* . . . Metal compounds (Nitrides, oxides)*
BJ21 BJ23 BJ25 BJ26 BJ27 BJ28 BJ29 BJ30
. Characterized by crystallinity, impurities . Concurrently serving as wiring . Shapes, arrangements of electrodes . Contact structures . . With plugs . . Shapes, arrangements of contact holes . . With extraction electrodes . Schottky electrodes
BK BK00
MANUFACTURE OF SOURCE AND DRAIN REGIONS, ELECTRODES AND SD VICINITY REGIONS 		BK01 BK02 BK03 BK05 BK06 BK07 BK08 BK09 BK10
. Formation of LDD regions, extension regions . . Inner side (Low impurity) regions to outer side (High impurity) regions . . Outer side (High impurity) regions to inner side (Low impurity) regions . Formation of SD regions using dummy gates as masks . Utilization of nonuniformity of mask ability . Utilization of differences in diffusion rates . Processing before forming source and drain regions* . . Etching* . . Ion implantation
BK11 BK12 BK13 BK14 BK15 BK16 BK17 BK18 BK19 BK20
. Formation of source and drain regions . . Introduction of impurities . . . Ion implantation . . . . Oblique ion implantation, rotation ion implantation . . . Solid phase diffusion . . . . Solid phase diffusion sources* . . Growth . . . Selective growth . Processing after forming source and drain regions . . Heat treatment
BK21 BK22 BK23 BK24 BK25 BK26 BK27 BK28 BK29 BK30
. . . Activation . . Ion implantation . . Etching . Processing before forming source and drain electrodes . . Formation of contact holes . . . Etching . . . . SAC (Self-aligning contacts) . Formation of source and drain electrodes . . PVD . . CVD
BK31 BK32 BK33 BK34 BK35 BK37 BK38 BK39 BK40
. . . Selective CVD . . Ion implantation . . Heat treatment . . . Silicidation . . . . Atmospheres . Processing after forming source and drain electrodes . . Heat treatment . . Etching . Others*
CA CA00
WIRING 		CA01 CA02 CA03 CA04 CA05 CA06 CA07 CA08 CA10
. Arrangements, shapes . Multilayers* . Materials* . . Polycrystals . . Superconducting materials . Multilayered wiring . Insulating structures between wiring - electrodes, electrodes - electrodes . . Insulation by sidewalls . Bonding pads
CB CB00
ELEMENT SEPARATION STRUCTURES 		CB01 CB02 CB03 CB04 CB06 CB07 CB08 CB10
. Field insulating films . Channel stoppers . . Impurity distributions . Grooved structures . Separation by electrodes . Guard rings . Wells . Relationship between other regions and element separation regions
CC CC00
INTERLAYER FILMS, PROTECTION FILMS 		CC01 CC02 CC03 CC04 CC05 CC06 CC07 CC08 CC09 CC10
. Multilayers (FW application in the order from lower layers)* . Materials* . . SiO . . . Containing impurities . . . . PSG . . . . BSG . . . . BPSG . . SiN . . SiON . . Organic substances
CC11 CC12 CC13 CC14 CC15 CC16 CC19 CC20
. Processes for manufacture* . . CVD . . . Plasma CVD . . . Reaction gases* . . . . Organic type (TEOS or the like) . . Application . Heat treatment* . . Resists, softening of glass
CD CD00
OTHER REGIONS, OTHER ELEMENT STRUCTURES AND MANUFACTURE 		CD01 CD02 CD04 CD05 CD06 CD08 CD09 CD10
. Embedded regions . . Embedded high concentration regions . Controlling lifetime . . Imperfection of crystallinity . Internal stress existing regions . Field plates (Other than internal electric field relieving) . . Relieving of internal electric fields . Processes for manufacture*
CE CE00
MANUFACTURING STEPS IN GENERAL* 		CE01 CE02 CE03 CE05 CE06 CE07 CE08 CE10
. Providing porosity . Lift-off . Gettering . Flattening . . Etch back . . CMP . . Flattening of SD region or SD electrode and G electrode upper surfaces . Same vacuum processing
CE11 CE12 CE13 CE14 CE16 CE18 CE19 CE20
. Exposure . . Positioning . . Mask steps . . . Mask materials . Reduction reaction . Local anneals . Utilization of nonuniformity of mask ability . Formation of sidewalls (Excluding gate sidewalls)
CF CF00
SIMULTANEOUS STEPS 		CF01 CF02 CF03 CF04 CF05 CF07 CF09
. Wiring and gate electrodes . Resistances and gate electrodes . Simultaneous growth of polycrystals and single crystals . Silicides on SD and on gate electrodes . Plugs on SD and on gate electrodes . Diffusion and implantation to SD diffusion regions and gate electrode . Channel and punch-through stoppers
DA DA00
PROTECTION 		DA01 DA03 DA04 DA05 DA06 DA08 DA10
. Arrangements and layouts of protective elements . Separation by wells . Source and drain integrated resistances . Punch-through with sources and drains . Breakdown with substrates . Performing protection by elements to Viewpoint AB and the following . Sensors, temperature and current detection
DB DB00
SIMULATIONS 		DB01 DB02 DB03 DB04 DB05 DB06 DB07 DB08 DB10
. Calculation methods* . . Meshes . . Monte Carlo method . Parameters* . . Impurities . Performing corrections by actually measured values . For thresholds . Process simulations* . Others*
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