F-Term-List

H01L29/78,371

BA00
ELECTRIC CHARGE ACCUMULATION MECHANISM

BA01

BA02

BA03

BA04

BA05

BA06

BA07

BA08

. FG types

. . Arrangement of FG

. . . Overlapping with SD, see BB13

. . . Partial overlapping on CH, see BB04

. . . On fields

. . . Overlapping with other gates

. . . . Overlapping with CG

. . . . Injection gates (erasing and writing gates)

BA12

BA13

BA14

BA15

BA16

BA17

BA18

BA19

. . Shape and structure of FG

. . . Embedded FG/grooves, see BD30

. . . CG side wall, see BH14

. . . Protrusions of FG, see BC03

. . . Multiple FG (In a single memory cell)

. . . FG connection

. . . PN junctions (In FG)

. . FG materials (Excluding polycrystals)

BA22

BA23

BA24

BA26

BA27

BA28

BA29

. . FG peripheral insulation films

. . . Insulation film thickness

. . . . Partial making of thin film, see BA33-7

. . . Insulation film material, see BA33-BA37

. . . . Silicon-rich SiO2 film, see BA33-BA37

. . . . Impurity doping, see BA33-BA37

. . . . Containing nitride film, see BA33-BA37

BA33

BA34

BA35

BA36

BA37

BA40

. . . Thin film making or characteristic sections of insulation film materials

. . . . Between SD and FG

. . . . Between CH and FG

. . . . Between CG and FG

. . . . Between injection gates and FG

. . Using superconductors

BA41

BA42

BA43

BA44

BA45

BA46

BA47

BA48

BA49

. Trap accumulation types

. . Insulation film materials*

. . . Single-layered insulation films

. . . . Oxide films, refer to BH10

. . . Including nitride films*

. . . . MNOS types

. . . Containing alumina*

. . . Containing impurities, see BH10

. . . Band gaps and inclined structures

BA52

BA53

BA54

. . Trap levels, see BB04

. . Insulation film thickness

. . Clusters

BA61

BA62

BA63

BA64

BA65

BA66

BA68

. Other memory operations*

. . Ferroelectrics

. . Amorphous

. . Electron gases and hetero junctions, see BD40

. . Semi-insulating material, see BD40

. . Superlattices, see BD40

. . Magnetic substances

BB00
CONTROL

BB01

BB02

BB03

BB04

BB05

BB06

BB08

BB09

BB10

. Control devices

. . With CG

. . . Multiple gates (Except FG)

. . . Offset gates, see BD22

. . . Stacked gates (Identical end parts), see BH19

. . . Diffusion control regions

. . CG materials (Other than polycrystals)

. . Injection gates, erasing and writing gates

. . . Injection gate arrangement

BB12

BB13

BB15

BB17

BB20

. . Without control gates

. . . Control by capacitance between SD and FG

. . Control by CH and wells

. Capacitance analysis

. Others*

BC00
ELECTRIC CHARGE INJECTIONS

BC01

BC02

BC03

BC04

BC05

BC06

BC07

BC08

BC09

BC10

. Tunnel injections

. . Fowler Nordheim Tunnel injection

. . Protrusions and electric field concentration, see BA15

. Avalanche injections

. . Source drain junction breakdown

. Formation of high impurity concentration parts (of electric charge injection parts)

. Injection area formation

. . PN diodes

. . Poly-diodes

. . Injector, see BA26 and thereafter

BC11

BC12

BC13

BC17

BC18

BC20

. Channel injection

. . Inhomogeneous electric fields, see BA01 and thereafter

. . Carrier moving directions and elevated sections, see BD13

. Optical writing, see BE08

. Electron beam writing

. Others*

BD00
ELEMENT STRUCTURES

BD01

BD02

BD03

BD04

BD05

BD06

BD07

BD09

BD10

. Memory cell (sensor)

. . MOS transistors

. . . SD regions

. . . . Flat-shaped S/D

. . . . Cross-sectional S/D

. . . . S/D depth

. . . . High voltage resistant structures, such as LDD (of memory cells), see BD27

. . . . Impurity doping and distribution of impurity concentration (of SD)

. . . . Shared or switching source drains

BD12

BD13

BD14

BD15

BD16

BD17

BD18

BD19

BD20

. . . Channel regions

. . . . Channel shapes

. . . . Channel doping, see BF01

. . . . . Partial channel doping, see BF01

. . . Vertical MOS

. . Sensors other than MOS transistors

. . . Bipolar transistors

. . . CCD

. . . Capacity and capacitors

BD21

BD22

BD23

BD24

BD25

BD26

BD27

BD29

BD30

. Combinations

. . Address gate transistors, see BB04

. . Transistors for writing and erasing

. . CMOS structures

. . BiCMOS structures

. . EDMOS

. . High voltage resistant transistors (of peripheral circuits), see BD07

. SOS

. SOI, thin film transistors, and three-dimensional elements

BD31

BD32

BD33

BD34

BD35

BD36

BD37

BD38

BD39

BD40

. Array

. . Dense array structures

. Cell arrangement and cell structures

. . AND gate and NAND gate structures

. Separation

. . Well

. . LOCOS

. . Guard rings, parasitic channel prevention and diffusion

. Substrate materials

. . Group 3-5

BD41

BD42

BD43

BD44

BD45

BD46

BD47

BD50

. Surface protection films

. . Transparent films

. . Shielding films

. . PSG

. . Nitride films

. . Metal films

. . Shield

. Others

BE00
PERIPHERAL TECHNOLOGY

BE01

BE02

BE03

BE05

BE06

BE07

BE08

BE10

. Address circuits and decode circuits

. Read circuits and read methods

. . Dynamic read

. Write circuits and write methods

. Erasing

. . Electric erasing and erasing circuits

. . Optical erasing, see BC17

. Containers

BE11

BE12

BE13

BE14

BE17

BE20

. Power source circuits

. . Unipolar power sources

. . Single power sources

. . Boosting and booster circuits

. Protection

. Others*

BF00
OPERATION

BF01

BF02

BF03

BF05

BF07

BF08

BF09

BF10

. Properties, hysteresis and threshold value

. . Memory retention

. . Rewriting frequency for preventing deterioration

. Multi-bit memory

. Parasitic

. . Parasitic capacity

. . Leak and short-circuit prevention, see BD38

. Others*

BG00
APPLICATION

BG01

BG02

BG03

BG04

BG07

BG08

BG09

BG10

. Analog memory

. Variable resistance

. AD and DA conversion

. Load resistance

. Circuit switching, redundant circuits or the like

. Product information memory signatures

. Volatile memory backup

. Others*

BH00
MANUFACTURING METHODS

BH01

BH02

BH03

BH04

BH05

BH06

BH07

BH08

BH09

BH10

. Insulation film formation

. . CVD

. . Thermal oxidation

. . Tunnel insulation film formation

. . Nitride film formation

. . . Thermal nitridation

. Diffusion

. . Double diffusion

. Ion implantation

. . Trap formation by ion implantation

BH11

BH12

BH13

BH14

BH15

BH16

BH17

BH18

BH19

. Epitaxial

. . Molecular beam epitaxial, MOCVD, or the like

. Etching

. . Dry etching (Isotropic etching)

. . Wet etching (Anisotropic etching)

. Heat treatment

. Hydrogen treatment

. Vacuum treatment and pressure treatment

. Self alignment, see BB05

BH21

BH23

BH26

BH30

. Simultaneous formation of peripheral elements, see BD21

. Multilayer wiring technology

. Test aging

. Others*

5F101	Non-volatile memory
	H10D30/01 ,501;30/68-30/69