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F-Term-List

5F110 Thin film transistor
H10D30/01 ,201-30/01,206@Z;30/47,101;30/67-30/67,206@Z;86/00-86/60@Z
H01L29/78,611-29/78,627@Z AA AA00
PURPOSE 		AA01 AA02 AA03 AA04 AA05 AA06 AA07 AA08 AA09
. Acceleration of operation . . Reduction of parasitic capacitance . . Reduction of resistance in electrodes or wiring . Integration . Improvement of ON/OFF ratio . . Reduction of leakage current . . Increase in current . Control of threshold voltage . Low power consumption
AA11 AA12 AA13 AA14 AA15 AA16 AA17 AA18 AA19
. Raising voltage resistance . . Raising voltage resistance on gates . . Raising voltage resistance between sources and drains . Preventing deterioration of characteristics with time . Kink prevention e.g. prevention of floating body effect . Simplification of manufacture processes . Low temperature processes . Flattening . Termination of dangling bond e.g. hydrogenation
AA21 AA22 AA23 AA24 AA25 AA26 AA27 AA28 AA30
. Protective measures . . Prevention of electrostatic breakdown . . Protection against heat . Test measurement or inspection . . Simulation . Prevention of defects in elements or wiring . Correction of defects in elements or wiring . Increase of area . Others *
BB BB00
APPLICATION OR OPERATION 		BB01 BB02 BB03 BB04 BB05 BB06 BB07 BB08 BB09 BB10
. Active matrix substrates . . integrated together with peripheral circuits . Logic circuit . . CMOS circuits . Memories . . DRAMs . . SRAMs . . Non-volatile memories . Sensors . . Image sensors
BB11 BB12 BB13 BB20
. Three-dimensional integrated circuits . High-power elements e.g. IGBTs or LDMOSs . Special operation . Others *
CC CC00
STRUCTURES 		CC01 CC02 CC03 CC04 CC05 CC06 CC07 CC08 CC09 CC10
. coplanar . . Forward coplanar doping . inverted coplanar . . Inverted coplanar doping . Forward staggered . . Forward staggered doping . Inverse staggered . . Inverse staggered doping . vertical . Others
DD DD00
SUBSTRATES 		DD01 DD02 DD03 DD04 DD05 DD06 DD07 DD08
. Substrate materials * . . Glass * . . . Quartz glass . . Single crystal insulators e.g. sapphire . . Silicon substrates . . Defined characteristics of materials . . . with defined strain points . . . with defined coefficients of thermal expansion
DD11 DD12 DD13 DD14 DD15 DD17 DD18 DD19
. with surface layers . . Surface layer materials * . . . SiO . . . SiN . . . SiON . . Plural layers . . on both sides . . on back side only
DD21 DD22 DD24 DD25 DD30
. Shapes of substrates . specially adapted for voltage application to substrates . Manufacturing methods * . . Treatment * . Others *
EE EE00
GATES 		EE01 EE02 EE03 EE04 EE05 EE06 EE07 EE08 EE09 EE10
. Materials * . . Metals * . . . Al . . . High-melting point metals * . . . Silicides . . . Alloys * . . . Transparent conductive films e.g. ITO . . Semiconductors * . . . Polycrystalline Si . . . Distribution of conductivity types
EE11 EE12 EE14 EE15
. . Defined characteristics of materials . . Distribution of plural kinds of materials . Plural layers . . Three or more layers
EE21 EE22 EE23 EE24 EE25 EE27 EE28 EE29 EE30
. Shapes . . Cross-sectional shapes . . . tapered . . Plane shapes . . Defined sizes relative to other components . Plural gates . . in series . . in parallel . . Back gates
EE31 EE32 EE33 EE34 EE36 EE37 EE38
. having sidewalls . . by deposition . . by oxidation of electrode surfaces . . . Anodic oxidation film . Specially designed connections with gate wirings . Specially designed gate wirings . provided with wirings via contact holes
EE41 EE42 EE43 EE44 EE45 EE47 EE48 EE50
. Manufacture methods * . . Deposition * . . . Vapour evaporation . . . Sputtering . . . CVD . . Pretreatment * . . After-treatment * . Others *
FF FF00
GATE INSULATING FILMS 		FF01 FF02 FF03 FF04 FF05 FF06 FF07 FF09 FF10
. Materials * . . SiO . . SiN . . SiON . . Defined characteristics of materials . . Distribution of plural kinds of materials . . containing impurities * . Plural layers . . Three or more layers
FF11 FF12 FF13
. Shapes . . Cross-sectional shapes . . Plane shapes
FF21 FF22 FF23 FF24 FF25 FF26 FF27 FF28 FF29 FF30
. Manufacturing methods * . . Oxidation . . . Thermal oxidation . . . Anodic-oxidation . . . . in plasma atmosphere . . Nitriding . . Deposition * . . . Sputtering . . . CVD * . . . . Plasma CVD
FF31 FF32 FF33 FF35 FF36 FF40
. . . . . ECR plasma CVD . . . . Low pressure CVD . . . . Photo CVD . . Pretreatment * . . After-treatment * . Others *
GG GG00
CHANNEL SEMICONDUCTOR LAYERS 		GG01 GG02 GG03 GG04 GG05 GG06 GG07
. Materials * . . Si . . Ge . . Compound semiconductors * . . Organic semiconductors . . Defined characteristics of materials . . Distribution of plural kinds of materials
GG11 GG12 GG13 GG14 GG15 GG16 GG17 GG19 GG20
. Crystalline structures . . Single crystals . . Polycrystals . . Microcrystals . . amorphous . . Defined crystal grain diameters or grain sizes . . Defined crystallographic orientations . Plural layers . . Superlattices
GG21 GG22 GG23 GG24 GG25 GG26 GG28 GG29 GG30
. Shapes . . Cross-sectional shapes . . Plane shapes . . Defined film thicknesses of channel semiconductor layers . . . 1000 angstroms or 0.1micrometer or less . . Defined size relative to other components . Defined channel lengths . Defined channel widths . Number of channels larger than that of gates
GG31 GG32 GG33 GG34 GG35 GG36 GG37 GG39
. Impurities in channel regions . . Impurity materials * . . . Impurities not serving as carriers * . . Defined concentrations . . . i-layers . . Distribution of impurities . . . Only one conductivity type impurity . with insulating regions in channel semiconductor layers
GG41 GG42 GG43 GG44 GG45 GG46 GG47 GG48
. Manufacturing methods * . . Deposition * . . . Sputtering . . . CVD * . . . . Plasma CVD . . . . . ECR plasma CVD . . . . Low pressure CVD . . . . Photo CVD
GG51 GG52 GG53 GG54 GG55 GG57 GG58 GG60
. . Introducing methods of impurities * . . . Ion implantation . . . Diffusion . . . . Solid state diffusion . . . . Gas phase diffusion in atmosphere . . Pretreatment * . . After-treatment * . Others *
HJ HJ00
SOURCES OR DRAINS 1 OF IMPURITY REGIONS 		HJ01 HJ02 HJ04 HJ06 HJ07
. Impurity materials * . . Impurities not serving as carriers * . Defined impurity concentrations . Distribution of impurities . . Only one conductivity type impurity except LLDs
HJ11 HJ12 HJ13 HJ14 HJ15 HJ16 HJ17 HJ18
. Manufacturing methods of impurity regions * . . Introducing methods of impurities * . . . Ion implantation . . . . Oblique ion-implantation . . . Diffusion . . . . Solid state diffusion . . . . Gas phase diffusion in atmosphere . . . . . in plasma atmosphere
HJ21 HJ22 HJ23 HJ30
. . Treatments before impurity introduction * . . Treatments after impurity introduction * . . . Activation of impurities . Others *
HK HK00
SOURCES OR DRAINS 2 OF LOW RESISTANCE LAYER 		HK01 HK02 HK03 HK04 HK05 HK06 HK07 HK08 HK09 HK10
. Materials * . . Metals * . . . Al . . . High-melting point metals * . . . Silicides . . . Alloys * . . . Transparent conductive films e.g. ITOs . . Semiconductors * . . . Si . . . Ge
HK11 HK12 HK13 HK14 HK15 HK16 HK17 HK18
. . . Compound semiconductors * . . . Crystal structures of semiconductors . . . . Single crystals . . . . Polycrystals . . . . Microcrystals . . . . amorphous . . Defined characteristics of materials . . Distribution of plural kinds of materials
HK21 HK22 HK24 HK25 HK26 HK27 HK28
. Plural layers . . Three or more layers . Impurities contained in low resistance layers . . Impurity materials * . . . Impurities not serving as carriers * . . Defined impurity concentrations . . Distribution of impurities
HK31 HK32 HK33 HK34 HK35 HK36 HK37 HK38 HK39 HK40
. Manufacturing methods of low resistance layers * . . Deposition * . . . Sputtering . . . CVD * . . . . Plasma CVD . . . . . ECR plasma CVD . . . . Low pressure CVD . . . . Photo CVD . . Introduction of impurities . . Silicidation
HK41 HK42 HK50
. . Treatments before formation of low resistance layers * . . Treatments after formation of low resistance layers * . Others *
HL HL00
SOURCES OR DRAINS 3 WITH INTERVENTION OF CONTACT HOLES 		HL01 HL02 HL03 HL04 HL05 HL06 HL07 HL08 HL09 HL10
. Materials * . . Metals * . . . Al . . . High-melting point metals * . . . Silicides . . . Alloys * . . . Transparent conductive films e.g. ITOs . . Semiconductors * . . Defined characteristics of materials . . Distribution of plural kinds of materials
HL11 HL12 HL14
. Plural layers . . Three or more layers . Specially designed shapes or manufacturing methods of contact holes
HL21 HL22 HL23 HL24 HL26 HL27 HL30
. Manufacturing methods of electrodes or wirings * . . Deposition * . . . Sputtering . . . CVD . . Treatments before formation of electrodes or wiring * . . Treatments after formation of electrodes or wiring * . Others *
HM HM00
SOURCES OR DRAINS 4 (COMMON F-TERM) 		HM01 HM02 HM03 HM04 HM05 HM07
. Shapes . . Cross-sectional shapes . . . tapered . . Plane shapes . . Defined sizes relative to other components . with crystal structures different from that of channel regions
HM11 HM12 HM13 HM14 HM15 HM17 HM18 HM19 HM20
. Disposition . . Asymmetry . . Dispositions relative to gates . . . Offset . . . . LDDs . specially designed connections with source or drain wiring . Specially designed connections with picture element electrodes . Specially designed source or drain wiring . Others *
NN NN00
OTHER COMPONENTS 		NN01 NN02 NN03 NN04 NN05 NN06
. Protective films or passivation films . . Interlayer insulating films . . . Plural layers . . . Defined film-thicknesses . . . Functions other than interlayer insulating films * . . . Specially designed insulation between wirings
NN12 NN13 NN14 NN15 NN16
. . Island-like channel protective films . . . Plural layers . . . Defined film thicknesses . . . Functions other than protection * . . . . Etching stoppers
NN22 NN23 NN24 NN25 NN26 NN27 NN28
. . Materials * . . . SiO . . . SiN . . . PSG . . . BSG . . . Organic substances * . . . Defined characteristics of materials
NN32 NN33 NN34 NN35 NN36 NN37 NN38 NN39 NN40
. . Manufacturing methods * . . . Deposition * . . . . Sputtering . . . . CVD . . . . Spin-on coating . . . Oxidation . . . . Anodic-oxidation . . . Pretreatment * . . . After-treatment *
NN41 NN42 NN43 NN44 NN45 NN46 NN47 NN48 NN49 NN50
. Light-shielding films . . Plural layers . . Functions other than light shading * . . . with functions of electrodes or wirings . . Materials * . . . Metals * . . . . Al . . . Semiconductors * . . . Organic substances * . . . Defined characteristics of materials
NN52 NN53 NN54 NN55 NN57 NN58
. . Manufacturing methods * . . . Vapour evaporation . . . Sputtering . . . CVD . . . Pretreatment * . . . After-treatment *
NN61 NN62 NN63 NN65 NN66
. Element isolation regions . . Insulating regions . . Electrical shield . . Forming methods * . . . LOCOS
NN71 NN72 NN73 NN74 NN75 NN77 NN78 NN80
. Fusion with other elements * . . Capacitive elements . . . Auxiliary capacitances . . MOSFETs . . . sharing gate electrodes . Specially designed arrangements of TFTs . with plural TFTs of different characteristics . Others *
PP PP00
RECRYSTALLISATION 		PP01 PP02 PP03 PP04 PP05 PP06 PP07 PP08 PP10
. Heating means * . . Lamps e.g. RTA . . Laser * . . . Defined wavelengths . . . Scanning methods . . . Specially designed beam shapes . . . Plural beams . . Electron beams . Defined annealing temperatures
PP11 PP13 PP15 PP16
. using anti-reflection films or absorption films . Introduced gases * . Recrystallisation of channel regions only . Recrystallisation of sources or drains only
PP21 PP22 PP23 PP24 PP26 PP27 PP29
. Growth directions . . Perpendicular to substrates . . Parallel to substrates . . . Parallel to the length directions of channels . Simultaneous treatments with other techniques . . with activation of impurities . Multi-step heating
PP31 PP32 PP33 PP34 PP35 PP36 PP38 PP40
. Pretreatment * . . Doping . . . for converting amorphous . . . serving as catalysts . . Dehydrogenation . . Formation of species . After-treatment * . Others *
QQ QQ00
MANUFACTURING PROCESSES IN GENERAL 		QQ01 QQ02 QQ03 QQ04 QQ05 QQ06 QQ08 QQ09 QQ10
. Specially designed patterning . . Specially designed etching masks . . Specially designed etching methods . . . Dry etching . . . Wet etching . . by printing . Simultaneous formation . Continuous treatments . Specially designed sequence of processes
QQ11 QQ12 QQ14 QQ16 QQ17 QQ19
. Self-aligning . . Exposure from back sides . Lift-off . Lamination . . Lamination before formation of elements . Flattening
QQ21 QQ22 QQ23 QQ24 QQ25 QQ26 QQ28 QQ30
. Termination of dangling bonds e.g. hydrogenation . . Diffusion . . . Solid state diffusion . . . Gas phase diffusion in atmosphere . . . . in plasma atmosphere . . Ion implantation . Gettering . Others *
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