F-Term-List

H01L29/68-29/72@Z

AP00
PURPOSE

AP01

AP02

AP03

AP04

AP05

AP06

AP07

AP08

AP09

AP10

. Preventing current concentration

. Preventing short-circuits

. Preventing broken lines or cutting

. Preventing malfunctions, parasitic effects or surface leaks

. Reducing capacitance

. Improving secondary breakdown voltage and safe operating areas

. Improving noise characteristics

. Improving temperature characteristics

. Improving mechanical strength

. Improving heat resistance

AZ00
SEMICONDUCTOR MAIN UNITS

AZ01

AZ03

AZ05

AZ07

AZ08

AZ09

AZ10

. Crystal axes and orientation of crystal faces

. Thin film transistors, sapphire on substrate (SOS) and sapphire on insulator (SOI)

. Alloys

. Wafers and wafer processing

. . Monitoring elements

. . Measurement and inspection

. . Changing or correcting characteristics and master slicing

H01L29/68-29/72

BA00
ELEMENT STRUCTURE

BA06

BA07

BA08

BA09

. Lifetime control

. . Killers

. . Getters

. . Crystal imperfection

BA11

BA12

BA13

BA14

. Surface protective films and passivation films

. . Phosphor glass and phosphosilicate glass (PSG)

. . Nitride films

. . Polycrystals

BA21

BA22

BA23

BA24

BA25

BA27

BA29

. For integrated circuits

. . Layout

. . Element separation

. . . Separated planar patterns

. . . Separated cross-sectional configurations

. . . Grooves

. . Uneven surface structures

BA91

BA92

BA93

BA96

BA97

. Structures that control depletion layers

. . Mesas and bevels

. . Guard rings and channel stoppers

. . . Oxide separation

. . . . Local oxidation of silicon (LOCOS)

BB00
BASES

BB01

BB02

BB03

BB04

BB05

BB06

BB07

BB08

BB09

. Distribution of impurity concentration

. Additional regions (e.g., pn junctions, insulators, grooves and killers)

. Metal bases

. Band gaps

. Base resistance

. . Graft bases

. Polycrystals

. Lead-outs and embedded layers (i.e., in the case of lateral transistors)

. Multiple bases

BB90

. Shape

BC00
COLLECTORS

BC01

BC02

BC04

BC05

BC07

BC08

BC09

. Distribution of impurity concentration

. Additional regions (e.g., pn junctions, insulators, grooves and killers)

. Band gaps

. Collector resistance

. Polycrystals

. Lead-outs and embedded layers

. Multiple collectors

BC90

. Shape

BE00
EMITTERS

BE01

BE02

BE04

BE05

BE07

BE08

BE09

. Distribution of impurity concentration

. Additional regions (e.g., pn junctions, insulators, grooves and killers)

. Band gaps

. Stabilized resistance

. Polycrystals

. Lead-outs

. Multiple emitters

BE90

. Shape, stepped emitters and emitter mesas

BF00
EMITTER-BASE JUNCTIONS

BF01

BF02

BF03

BF05

BF06

BF07

BF08

BF09

. Patterns of emitter junction planes

. . Divided, lattice-shaped, comb-shaped or ring-shaped

. Emitter junction cross-sectional shape

. Variants characterized by emitter junctions

. . Hetero emitter junctions

. . Schottky emitter junctions

. . Tunnel emitter junctions

. Walled emitters

BF90

. . Separating emitter and base regions

H01L29/68-29/72@Z

BG00
BASE-COLLECTOR JUNCTIONS

BG01

BG03

BG05

BG06

BG07

BG08

BG10

. Patterns of collector junction planes

. Collector junction cross-sectional shape

. Variants characterized by collector junctions

. . Hetero collector junctions

. . Schottky collector junctions

. . Tunnel collector junctions

. Separating base and collector regions

H01L29/68-29/72

BH00
ELECTRODES AND WIRING

BH01

BH02

BH05

BH06

BH07

BH08

BH10

. Patterns of electrode planes

. . Comb-shaped electrodes

. Variants characterized by electrode materials

. . Polycrystals (BB, BC and BE take precedence)

. . Metal silicides

. . Multi-layer structures

. Field plates

BH11

BH12

BH13

BH14

BH16

BH18

. Special electrodes

. . Metal-oxide semiconductor (MOS) electrodes

. . Short-circuit electrodes

. . Pressure electrodes or crimping electrodes

. Bonding pads and leads

. Cross-sectional shape

BH93

BH94

BH99

. Insulation between layers

. . Multi-layer overlays

. . High melting point metals

BJ00
COMPLEXES

BJ01

BJ02

BJ03

BJ04

BJ05

BJ06

BJ08

. Combinations of bipolar transistors

. . Darlington transistors

. . pnp complements

. . Twin transistors

. . Variants in which different characteristics are given to each

. . Parallel connections

. Circuits

BJ11

BJ12

BJ14

BJ15

BJ16

BJ17

BJ18

BJ20

. Combinations with other elements

. . Diodes

. . . Collector clamps

. . Metal-oxide semiconductor field effect transistors (MOSFET)

. . Junction field-effect transistors (JFET)

. . Thyristors (i.e., SCR)

. . Passive elements (BJ08-90 are used without concrete structures)

. . . Resistor

BJ90

. . . Protective circuits (BJ11-BJ18 take precedence)

BJ93

BJ96

BJ99

. . . Schottky diodes

. . . Isolate gate bipolar transistors (IGBT)

. . Applicable circuits

BM00
COMPONENT MATERIALS

BM01

BM02

BM03

BM04

BM06

BM07

BM08

BM10

. Group IV

. Groups III-V

. . Three or more elements

. Groups II-VI, groups II-IV

. Non-monocrystals and microcrystals

. . Amorphous

. Porous

. Organic materials

BN00
OPERATION

BN01

BN02

BN03

BN04

BN06

BN07

BN08

BN09

. Lateral transistors

. Reverse transistors

. Integrated induction logic (IIL) and SITL

. Two-way transistors

. Hot electron transistors

. Tunnel transistors

. Punch-through transistors

. Superlattice elements

BP00
MANUFACTURING METHODS

BP01

BP02

BP03

BP04

BP05

BP06

BP07

BP08

BP09

BP10

. Diffusion

. . Multiple occurrences of diffusion using the same opening

. . Simultaneous diffusion with multiple substances

. . Diffusion in which multiple regions are formed simultaneously

. . Variants characterized by the source of diffusion

. . . Polycrystals

. . . Oxide films

. . Variants characterized by doping substances

. . Out diffusion

. . Variants using non-uniform mask capability

BP11

BP12

. Etching

. . Ion etching and plasma etching

BP21

BP22

BP23

BP24

BP25

BP26

. Ion implantation

. . Diagonal direction

. . Variants characterized by doping substances

. . Multiple occurrences of ion implantation using the same opening

. . Variants using non-uniform mask capability

. Neutron or electron beam irradiation

BP31

BP32

BP33

BP34

BP36

. Epitaxial growth

. . Molecular beam epitaxial growth

. . Selective epitaxial growth

. . Simultaneous growth of polycrystals and monocrystals

. Adhesion

BP41

BP42

BP43

BP44

BP46

BP47

BP48

BP49

. Heat treatment or annealing

. . In non-oxidizing atmospheres

. . Local annealing (e.g., lasers or electron beams)

. . Monocrystals

. Oxidation

. . Anodic oxidation

. . Selective oxidation

. . . Oxidation of porous substances

BP93

BP94

BP95

BP96

BP97

. . Anisotropic etching

. . Variants characterized by multiprocess etching methods

. . . Lift-off

. . . Variants that use differences in etching rates

. . . Etching after oxidation

BS00
SELF ALIGNMENT

BS01

BS02

BS03

BS04

BS05

BS06

BS07

BS08

BS09

. Permanent masks

. Inverse (reverse) masks

. Simultaneous aperture opening

. Side etching

. Using nitride films

. Using polycrystals

. Resists

. Using electrodes

. . Washed emitters

BZ00
OTHER ELEMENTS (WHEN BIPOLAR TRANSISTORS ARE NOT INCLUDED)

BZ01

BZ02

BZ03

BZ04

BZ05

. Diodes

. Metal-oxide semiconductor field-effect transistors (MOSFET)

. Junction field effect transistors (JFET)

. Thyristors (i.e., SCR)

. Coils, capacitors and resistors

5F003	Bipolar transistors
	H10D10/00 -10/80;48/32-48/34