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F-Term-List

5F102 JUNCTION FIELD-EFFECT TRANSISTORS
H10D30/01 ,401;30/47,201;30/80-30/87@Z
H10D30/01,401;30/47,201;30/80-30/87@Z FA FA00
PURPOSE OR EFFECT * 		FA01 FA02 FA03 FA04 FA05 FA06 FA07 FA08 FA09 FA10
. Increasing breakdown voltages . Increasing currents . Reducing source or drain resistances or contact resistances . Improving temperature characteristics . Preventing depletion layers due to channel surface levels . Measures against surge input e.g. protective circuits (P) . Impedance matching . Preventing effects from peripheral elements; Element isolation . Testing or measuring including those under manufacturing . improving mounted structures (G)
FB FB00
SPECIAL OPERATION * 		FB01 FB02 FB03 FB04 FB05 FB06 FB07 FB10
. Static induction transistors (SIT) . Ballistic elements . Negative resistance elements . . Chirp elements . Tunnel current control elements . Principal currents reacting to energies other than electric fields . . reacting to light or electromagnetic waves . Other special operations *
GA GA00
INTEGRATION * 		GA01 GA02 GA03 GA04 GA05
. FETs and FETs . . Enhancement/depletion or E/D types . . Complementary types . . JFETs and MESFETs . . MOSFETs and MESFETs
GA11 GA12 GA13 GA14 GA15 GA16 GA17 GA18 GA19
. FETs and other elements or components . . Bipolar transistors . . . composing SITL . . Diodes . . L or inductances . . C or capacitors . . R or resistors . . Striplines . . Light-emitting or light-receiving elements
GB GB00
PRINCIPAL CURRENT PATH * 		GB01 GB02 GB04 GB05 GB06 GB10
. parallel to substrate surfaces or horizontal FETs . . taking out electrodes from the rear sides [U] . vertical to substrate surfaces or vertical FETs . . flowing on mesa sides . . Embedded drains or sources e.g. taking out from substrate surfaces . Others *
GC GC00
GATE ARRANGEMENT * 		GC01 GC02 GC03 GC05 GC07 GC08 GC09 GC10
. Upper gates of horizontal FETs . Lower gates of horizontal FETs . Side gates of horizontal FETs or control of depletion layers from sides . Dual gates or multiple gates [W] . Surface gates of vertical FETs . Embedded gates of vertical FETs . Notched gates of vertical FETs . Others *
GD GD00
TYPE OF GATE JUNCTION * 		GD01 GD02 GD04 GD05 GD10
. MES types e.g. Schottky gates . . increasing barrier heights by sandwiching reverse conductivity layers . Pn junction types . . Heterogates . Others e.g. MOS or pseudo MIS
GJ GJ00
SUBSTRATE * 		GJ01 GJ02 GJ03 GJ04 GJ05 GJ06 GJ09 GJ10
. Semiconductor materials including semi-insulating materials * . . Group IV * . . . Silicon (Si) . . Group III-V * . . . Gallium arsenide (GaAs) . . . Indium phosphide (InP) . Materials other than semiconductors . . Materials of insulators e.g. glass or sapphire
GK GK00
BUFFER LAYER OR INTERMEDIATE LAYER * 		GK01 GK02 GK04 GK05 GK06 GK08 GK09 GK10
. Single semiconductor layers * . . Group IV * . . Groups III and V * . . . Gallium arsenide (GaAs) . . . Gallium aluminium arsenide (GaAlAs) . Multilayered structures including superlattices * . using lattice constant deviation or lattice distortion . Materials other than semiconductors
GL GL00
CHANNEL LAYER OR SEMICONDUCTOR LAYER THROUGH WHICH PRINCIPAL CURRENT FLOWS 		GL01 GL02 GL03 GL04 GL05 GL07 GL08 GL09 GL10
. Single semiconductor layers * . . Group IV * . . . Silicon (Si) . . Groups III and V * . . . Gallium arsenide (GaAs) . Non-doped layers or high-resistance layers . Multilayered structures including superlattices * . using lattice constant deviation or lattice distortion . Materials other than semiconductors
GL11 GL12 GL14 GL15 GL16 GL17 GL18 GL20
. Non-single crystals e.g. polycrystals . . amorphous . Inhomogeneous materials . . having non-uniform impurity concentrations . . having non-uniform compositions e.g. band gaps . . changing in thickness directions i.e. vertically to substrates . . changing from source (S) to drain (D) directions i.e. parallel to substrate surfaces . delta doped or planar doped
GM GM00
INTERPOSED LAYER BENEATH GATE, I.E. LAYER INTERPOSED BETWEEN A GATE METAL ELECTRODE BOTTOM AND A CHANNEL LAYER SURFACE * 		GM01 GM02 GM04 GM05 GM06 GM07 GM08 GM09 GM10
. Single semiconductor layers * . . Group IV * . . Group III-V * . . . Gallium arsenide (GaAs) . . . Gallium aluminium arsenide (GaAlAs) . Non-doped layers or high-resistance layers . Multilayered structures including superlattices * . having non-uniform impurity concentrations . having non-uniform compositions e.g. band gaps
GN GN00
SURFACE SEMICONDUCTOR LAYER, I.E. LAYER ARRANGED IN A POSITION HIGHER THAN THAT OF A GATE METAL ELECTRODE BOTTOM * 		GN01 GN02 GN04 GN05 GN06 GN07 GN08 GN09 GN10
. Single semiconductor layers * . . Group IV * . . Group III-V * . . . Gallium arsenide (GaAs) . . . Gallium aluminium arsenide (GaAlAs) . Non-doped layers or high resistance layers . Multilayered structures including superlattices * . having non-uniform impurity concentrations . having non-uniform compositions e.g. band gaps
GQ GQ00
APPLYING TWO-DIMENSIONAL CARRIER LAYER NEAR HETEROJUNCTION FOR CONDUCTIVE PATH (H) * 		GQ01 GQ02 GQ03 GQ04 GQ05 GQ06 GQ08 GQ09 GQ10
. Single heterostructures . . having electron supply layers beneath channel layers . Double heterostructures . . forming square well potential . Multilayer heterostructures . . One two-dimensional carrier layer for two heterojunctions . forming carrier layers in one-dimension e.g. linear carrier layers . using holes as carriers . flowing currents vertically to two-dimensional carrier layers
GR GR00
ELEMENT STRUCTURE * 		GR01 GR03 GR04 GR06 GR07 GR08 GR09 GR10
. selecting crystal axes or plane orientation for forming elements . Channel layer surfaces not being flat . . Recess structures . having additional regions in semiconductor substrates . . Impurity regions . . . Well regions . . Insulation regions including high-resistance regions . . Layers serving as etching stoppers
GR11 GR12 GR13 GR15 GR16 GR17
. asymmetrical . . having different distances between source (S)-gate (G) electrodes and drain (D)-gate (G) electrodes . . Shapes or impurity concentrations being different for sources and drains . characterised by impurity profiles or shapes of the source or drain . . LDD structures i.e. intermediate concentration regions between the concentration regions and channels . Sources and drains composed of semiconductor materials different from those of channels
GS GS00
GATE STRUCTURE * 		GS01 GS02 GS03 GS04 GS05 GS06 GS07 GS08 GS09 GS10
. Multilayered structures . . Three or more layers . characterised by cross-sections . . having upper parts being wider than the bottom e.g. T-shape . . having lower parts being wider than the upper parts . . left-right asymmetrical . characterised by plane shapes . . ring-shaped . . comb-shaped or serpentine . . Lattices
GT GT00
SCHOTTKY CONTACT MATERIAL, OR GATE BOTTOM LAYER (M) 		GT01 GT02 GT03 GT04 GT05 GT06 GT07 GT08 GT10
. Metals . . Aluminium (Al) . . Metals with high-melting point e.g. molybdenum (Mo) titanium (Ti) tantalum (Ta) tungsten (W) chromium (Cr) niobium (Nb) hafnium (Hf) vanadium (V) zirconium (Zr) . . Alloys * . Silicides . Nitrides . Semiconductors . . polycrystalline or porous . Others *
GV GV00
OTHER STRUCTURES * 		GV01 GV02 GV03 GV05 GV06 GV07 GV08 GV09
. using spaced wiring . using superconductors for electrodes or wiring . Bonding pad structures . forming surface protective films . . Multilayered structures . . Silicon dioxide (SiO2) films . . Trisilicon tetranitride (Si3N4) films . . Native oxides or surface oxide films
HA HA00
SELF-ALIGNING (I) * 		HA01 HA02 HA03 HA04 HA05 HA06
. Gate electrodes being masks . . forming source or drain regions . . forming source or drain electrodes . Dummy gates being masks . . forming source or drain regions . . forming source or drain electrodes
HA11 HA12 HA13 HA14 HA15 HA20
. Source or drain electrodes or deposited layers being masks . . forming channels . . forming recesses . . forming gate electrodes . . forming dummy gates . using masks having predetermined positions for forming gates sources or drains
HB HB00
SELF-ALIGNING II; FORMING MULTIPLE ELEMENTS * 		HB01 HB02 HB03 HB04 HB05 HB06 HB07 HB08 HB09 HB10
. Simultaneous formation (Additional classification is made in the relevant place selected from HB03-HB10.) . formed by the same mask (Additional classification is made in the relevant place selected from HB03-HB10.) . Parts to be formed . . Channels . . Recesses . . Gate impurity regions e.g. pn junction gates . . Gate electrodes . . Source and drain regions . . Source and drain electrodes . . Dummy gates
HC HC00
INDIVIDUAL PROCESS * 		HC01 HC02 HC03 HC04 HC05 HC06 HC07 HC08 HC09 HC10
. Epitaxial growth e.g. molecular beam epitaxy MOCVD . . Selective epitaxial growth including filling grooves by epitaxial growth . . simultaneously forming single crystals and polycrystals . delta doped or planar doped . Diffusion or solid state diffusion . . using lateral diffusion . Ion implantation . . in oblique or specific directions . . using transmissive masks or non-uniform masking capabilities . . forming insulating layers or high-resistance layers
HC11 HC12 HC13 HC15 HC16 HC17 HC18 HC19 HC20
. Vapour deposition or sputtering . . from oblique directions (K) . . using step disconnections during vapour deposition . Etching . . anisotropic or directional . . using overetching or side etching . forming sidewalls or leaving deposited parts on projection sides . Lift-off . forming reverse masks
HC21 HC22 HC23 HC24 HC26 HC27 HC29 HC30
. Heat treatment e.g. annealing . . Local annealing e.g. laser or electron beam irradiation . . softening resists or glass . . alloying or siliciding . Anodisation . producing porosity . characterised by exposure . Plating
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