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On this page, you can select 「MainGroup」 or 「Facet」 in H01L. |
HB:Handbook | ||||
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Select the desired 「MainGroup」 or 「facet」 etc. |
CC:Concordance | ||||
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Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof | HB | CC | 5F117 | |
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Details of semiconductor or other solid state devices (H01L 25/00 takes precedence; details of semiconductor bodies or of electrodes of devices provided for in group H01L 29/00 are classified therein; details peculiar to devices provided for in a single group of groups H01L 31/00-H01L 49/00 are classified therein) [2] | HB | CC | 5F065 | |
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Assemblies consisting of a plurality of individual semiconductor or other solid state devices, e.g. solar panels (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; generators using solar cells or solar panels H02N 6/00; details of complete circuit assemblies provided for in another subclass, e.g. details of television receivers, see the relevant subclass, e.g. H04N; details of assemblies of electrical components in general H05K) [2] | HB | CC | 5F037 | |
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Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (details thereof H01L 23/00, H01L 29/00-H01L 33/00, H10K, H10N; assemblies consisting of a plurality of individual solid state devices H01L 25/00) [2, 2006.01] | HB | CC | 5F081 | |
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Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers?; Capacitors or resistors having potential barriers?, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (H01L 31/00-H01L 33/00, H10K 10/00, H10N take precedence; details other than of semiconductor bodies or of electrodes thereof H01L 23/00; devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00)[2006.01] | HB | CC | 5F039 | |
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Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (H10K 30/00 takes precedence; devices consisting of a plurality of solid state components formed in, or on, a common substrate, other than combinations of radiation-sensitive components with one or more electric light sources, H01L 27/00) [2, 6, 2006.01] | HB | CC | 5F149 | |
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Semiconductor devices having potential barriers? specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (H10K 50/00 takes precedence; devices consisting of a plurality of semiconductor components formed in or on a common substrate and including semiconductor components having potential barriers?, specially adapted for light emission H01L 27/15; semiconductor lasers H01S 5/00)[2010.01] | HB | CC | 5F241 | |