FI-MainGroup/Facet-Choice

Individual devices[2025 01]
  • H10D1/00
  • Resistors, capacitors or inductors[2025.01] HB CC 5F038
  • H10D8/00
  • Diodes (variable-capacitance diodes H10D 1/64; gated diodes H10D 12/00)[2025.01] HB CC 5F087
  • H10D10/00
  • Bipolar junction transistors [BJT][2025.01] HB CC 5F003
  • H10D12/00
  • Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT][2025.01] HB CC 5F111
  • H10D18/00
  • Thyristors[2025.01] HB CC 5F005
  • H10D30/00
  • Field-effect transistors [FET] (insulated-gate bipolar transistors H10D 12/00)[2025.01] HB CC 5F140
  • H10D44/00
  • Charge transfer devices[2025.01] HB CC 4M118
  • H10D48/00
  • Individual devices not covered by groups H10D 1/00-H10D 44/00[2025.01] HB CC 5F123
    Constructional details[2025 01]
  • H10D62/00
  • Semiconductor bodies, or regions thereof, of devices having potential barriers[2025.01] HB CC 5F121
  • H10D64/00
  • Electrodes of devices having potential barriers[2025.01] HB CC 4M104
    Integrated devices; Assemblies of multiple devices[2025 01]
  • H10D80/00
  • Assemblies of multiple devices comprising at least one device covered by this subclass[2025.01] HB CC 5F037
  • H10D84/00
  • Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers[2025.01] HB CC 5F081
  • H10D86/00
  • Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates[2025.01] HB CC 5F110
  • H10D87/00
  • Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate[2025.01] HB CC 5F048
  • H10D88/00
  • Three-dimensional [3D] integrated devices[2025.01] HB CC 5F080
  • H10D89/00
  • Aspects of integrated devices not covered by groups H10D 84/00-H10D 88/00[2025.01] HB CC 5F038
  • H10D99/00
  • Subject matter not provided for in other groups of this subclass[2025.01] HB CC 5F121
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