On this page, you can select 「MainGroup」 or 「Facet」 in H10D. |
HB:Handbook | ||||
Select the desired 「MainGroup」 or 「facet」 etc. |
CC:Concordance |
Individual devices[2025 01] | |||||
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Resistors, capacitors or inductors[2025.01] | HB | CC | 5F038 | |
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Diodes (variable-capacitance diodes H10D 1/64; gated diodes H10D 12/00)[2025.01] | HB | CC | 5F087 | |
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Bipolar junction transistors [BJT][2025.01] | HB | CC | 5F003 | |
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Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT][2025.01] | HB | CC | 5F111 | |
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Thyristors[2025.01] | HB | CC | 5F005 | |
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Field-effect transistors [FET] (insulated-gate bipolar transistors H10D 12/00)[2025.01] | HB | CC | 5F140 | |
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Charge transfer devices[2025.01] | HB | CC | 4M118 | |
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Individual devices not covered by groups H10D 1/00-H10D 44/00[2025.01] | HB | CC | 5F123 | |
Constructional details[2025 01] | |||||
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Semiconductor bodies, or regions thereof, of devices having potential barriers[2025.01] | HB | CC | 5F121 | |
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Electrodes of devices having potential barriers[2025.01] | HB | CC | 4M104 | |
Integrated devices; Assemblies of multiple devices[2025 01] | |||||
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Assemblies of multiple devices comprising at least one device covered by this subclass[2025.01] | HB | CC | 5F037 | |
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Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers[2025.01] | HB | CC | 5F081 | |
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Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates[2025.01] | HB | CC | 5F110 | |
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Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate[2025.01] | HB | CC | 5F048 | |
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Three-dimensional [3D] integrated devices[2025.01] | HB | CC | 5F080 | |
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Aspects of integrated devices not covered by groups H10D 84/00-H10D 88/00[2025.01] | HB | CC | 5F038 | |
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Subject matter not provided for in other groups of this subclass[2025.01] | HB | CC | 5F121 | |