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This page displays all 「FI」 in main group H10D30/00. |
HB:Handbook | ||||
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CC:Concordance | |||||
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Field-effect transistors [FET] (insulated-gate bipolar transistors H10D 12/00)[2025.01] | HB | CC | 5F140 | |
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.Manufacture or treatment[2025.01] | HB | CC | 5F123 | |
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..manufacturing or treatment of transistors provided for in H10D30/60~H10D30/65, e.g., manufacturing of insulated gate field effect transistor[IGFET] | HB | CC | 5F140 | |
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characterized only by the single processes | HB | CC | 5F140 | |
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MOS processes, e.g., characterized only by either formation of source regions, drain regions or formation of self-align and electrodes | HB | CC | 5F140 | |
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characterized by tests or measurements | HB | CC | 5F140 | |
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Others | HB | CC | 5F140 | |
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..manufacturing or treatment of transistors provided for in H10D30/67 or H10D30/47,10, e.g., manufacturing of thin film transistors [TFT] | HB | CC | 5F110 | |
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...characterized by the manufacturing or the treatment of sources, drains | HB | CC | 5F110 | |
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characterized by methods of formation of sources, drains | HB | CC | 5F110 | |
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.characterized by methods of formation of source electrodes, drain electrodes | HB | CC | 5F110 | |
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.characterized by methods of formation of source regions, drain regions | HB | CC | 5F110 | |
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..self-align | HB | CC | 5F110 | |
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...by exposure from the rear sides | HB | CC | 5F110 | |
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Others | HB | CC | 5F110 | |
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...characterized by manufacturing or treatment of gates | HB | CC | 5F110 | |
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characterized by methods of forming gate insulation films | HB | CC | 5F110 | |
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.using methods for the production of anodic oxidation coatings | HB | CC | 5F110 | |
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Others | HB | CC | 5F110 | |
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...characterized by the methods for the deposition of channel semiconductor layers | HB | CC | 5F110 | |
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...characterized by tests, measurements or simulation | HB | CC | 5F110 | |
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...characterized by other processes | HB | CC | 5F110 | |
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flattening | HB | CC | 5F110 | |
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continuous formation | HB | CC | 5F110 | |
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patterning | HB | CC | 5F110 | |
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lamination | HB | CC | 5F110 | |
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passivating dangling bond defects, e.g., hydrogenation | HB | CC | 5F110 | |
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annealing | HB | CC | 5F110 | |
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.recrystallisation;single crystallisation | HB | CC | 5F110 | |
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Others | HB | CC | 5F110 | |
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..manufacturing and treatment of transistors provided for in H10D30/66, e.g., manufacturing of vertical DMOS[VDMOS]field effect transistors | HB | CC | 5F111 | |
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characterized by the processes for forming impurity ranges | HB | CC | 5F111 | |
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.self-aligned diffusion | HB | CC | 5F111 | |
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..controlling the positions of the midpoints of base wells | HB | CC | 5F111 | |
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..control of the position of the ends of gate electrode parts, e.g., oxidization of the sidewalls | HB | CC | 5F111 | |
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characterized by the processes of impurity layer growth | HB | CC | 5F111 | |
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characterized by the steps for forming insulation layers and electricity conducting layers | HB | CC | 5F111 | |
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characterized by etching | HB | CC | 5F111 | |
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characterized by lifetime control | HB | CC | 5F111 | |
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characterized by passivation | HB | CC | 5F111 | |
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characterized by lamination of wafers | HB | CC | 5F111 | |
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characterized by inspections, measurements or simulation | HB | CC | 5F111 | |
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Others | HB | CC | 5F111 | |
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..manufacturing and treatment of transistors provided for in H10D30/80~H10D30/87 or H10D30/47,201, e.g., manufacturing of field effect transistors [FET]or high electron mobility transistors [HEMT]having gate electrodes with rectifying junctions | HB | CC | 5F102 | |
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..manufacturing and treatment of transistors provided for in H10D30/68~H10D30/69, e.g., manufacturing of insulated gate field effect transistors having floating gates or charge trapping gate insulators | HB | CC | 5F101 | |
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.FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels[2025.01] | HB | CC | 5F123 | |
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..having one-dimensional [1D] charge carrier gas channels, e.g. quantum wire FETs or transistors having 1D quantum-confined channels[2025.01] | HB | CC | 5F123 | |
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..having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT][2025.01] | HB | CC | 5F123 | |
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...transistors using nano-carbon, e.g., nano-ribbons | HB | CC | 5F110 | |
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...high electron mobility transistors [HEMT] | HB | CC | 5F102 | |
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.Insulated-gate field-effect transistors [IGFET] (H10D 30/40 takes precedence)[2025.01] | HB | CC | 5F140 | |
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using compound semiconductors | HB | CC | 5F140 | |
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used for MOSIC | HB | CC | 5F140 | |
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characterized only by the structures of circuits | HB | CC | 5F140 | |
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characterized only by the structures of gate electrodes | HB | CC | 5F140 | |
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characterized only by channel structures | HB | CC | 5F140 | |
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characterized specially by operation | HB | CC | 5F140 | |
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protective devices | HB | CC | 5F140 | |
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LDD | HB | CC | 5F140 | |
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used for memories, e.g., 1Tr.DRAM cells | HB | CC | 5F140 | |
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characterized only by the structure of passivation | HB | CC | 5F140 | |
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characterized only by the selection of crystal orientation | HB | CC | 5F140 | |
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characterized only by isolation regions | HB | CC | 5F140 | |
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characterized only by source regions, drain regions | HB | CC | 5F140 | |
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ISFET | HB | CC | 5F140 | |
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having trenching gates | HB | CC | 5F140 | |
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Increasing the breakdown voltage, increases in the current, e.g., parallelizing | HB | CC | 5F140 | |
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other MOSstructures | HB | CC | 5F140 | |
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others, e.g., characterized by both the structures and the processes | HB | CC | 5F140 | |
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..Fin field-effect transistors [FinFET][2025.01] | HB | CC | 5F140 | |
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..Vertical IGFETs (H10D 30/66 takes precedence)[2025.01] | HB | CC | 5F140 | |
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..Double-diffused metal-oxide semiconductor [DMOS] FETs[2025.01] | HB | CC | 5F140 | |
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...Lateral DMOS [LDMOS] FETs[2025.01] | HB | CC | 5F140 | |
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...Vertical DMOS [VDMOS] FETs[2025.01] | HB | CC | 5F111 | |
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....characterized by semiconductor regions | HB | CC | 5F111 | |
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characterized by transistor cells | HB | CC | 5F111 | |
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.source regions | HB | CC | 5F111 | |
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.base regions; body regions | HB | CC | 5F111 | |
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..high concentration parts; low density parts | HB | CC | 5F111 | |
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..channel parts | HB | CC | 5F111 | |
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.characterized by the planar shapes or the arrangement patterns of impurity ranges comprising the cells | HB | CC | 5F111 | |
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characterized by drain regions | HB | CC | 5F111 | |
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characterized by drift regions | HB | CC | 5F111 | |
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.having super-junctions | HB | CC | 5F111 | |
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.having JFET regions | HB | CC | 5F111 | |
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.having the regions of different concentrations but of the same conductivity type on the surface of a drift region | HB | CC | 5F111 | |
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.having the regions of different conductivity types on the surface of a drift region | HB | CC | 5F111 | |
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characterized by the constituent materials of substrates, e.g., using compound semiconductors, characterized by plane orientation | HB | CC | 5F111 | |
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Others | HB | CC | 5F111 | |
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....characterized by electrodes | HB | CC | 5F111 | |
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characterized by MOS gates, e.g., the electrodes, insulation films, the shield structures | HB | CC | 5F111 | |
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.characterized by the shapes of gate electrodes | HB | CC | 5F111 | |
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.characterized by the shapes of gate insulating films | HB | CC | 5F111 | |
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.having electricity conducting bodies attached to the gates, e.g., dummy gates | HB | CC | 5F111 | |
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characterized by source electrodes | HB | CC | 5F111 | |
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.comprised of multiple layers | HB | CC | 5F111 | |
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.characterized by the shapes | HB | CC | 5F111 | |
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..having contact parts which are not planar | HB | CC | 5F111 | |
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Others | HB | CC | 5F111 | |
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....characterized by areas surrounding a chip or a chip as a whole | HB | CC | 5F111 | |
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characterized by termination regions' structures which increase the breakdown voltage of semiconductors | HB | CC | 5F111 | |
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.having impurity ranges or electrodes surrounding cell regions, e.g., having guard rings and field plates | HB | CC | 5F111 | |
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.having impurity ranges surrounding cell regions (B takes precedence) | HB | CC | 5F111 | |
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.having electrodes surrounding cell regions (B takes precedence) | HB | CC | 5F111 | |
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Characterized by wring, pads and implementation relations | HB | CC | 5F111 | |
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characterized by isolation regions | HB | CC | 5F111 | |
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Characterized by the planar shapes or the arrangement patterns of multiple transistor cells | HB | CC | 5F111 | |
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Others | HB | CC | 5F111 | |
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....having gates which are not planar types | HB | CC | 5F111 | |
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in which gates are formed within grooves, e.g., V-groove type MOS[VMOS],trench gate type MOS[UMOS] | HB | CC | 5F111 | |
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.in which channel regions, source regions, drain regions are formed within grooves | HB | CC | 5F111 | |
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with gates formed by burying them | HB | CC | 5F111 | |
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using SOI or IMOX technologies | HB | CC | 5F111 | |
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Others | HB | CC | 5F111 | |
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....characterized by operation | HB | CC | 5F111 | |
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giving biases to base regions | HB | CC | 5F111 | |
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having minority carrier injection regions | HB | CC | 5F111 | |
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MOS type SIT | HB | CC | 5F111 | |
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Others | HB | CC | 5F111 | |
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..Thin-film transistors [TFT][2025.01] | HB | CC | 5F110 | |
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...characterized by sources, drains | HB | CC | 5F110 | |
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characterized by LDD,e.g., the structures and the manufacturing methods | HB | CC | 5F110 | |
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characterized by the structures of source regions, drain regions and electrodes | HB | CC | 5F110 | |
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.characterized by the shapes | HB | CC | 5F110 | |
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.multiple layers | HB | CC | 5F110 | |
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.characterized by materials, the concentrations of impurities | HB | CC | 5F110 | |
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Others | HB | CC | 5F110 | |
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...characterized by the gates | HB | CC | 5F110 | |
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characterized by offset gates, e.g., the structures, the manufacturing methods | HB | CC | 5F110 | |
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characterized by gate electrodes | HB | CC | 5F110 | |
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.characterized by the shapes | HB | CC | 5F110 | |
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.multiple layers | HB | CC | 5F110 | |
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.characterized by the materials, the concentrations of impurities | HB | CC | 5F110 | |
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.having multiple gate electrodes | HB | CC | 5F110 | |
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characterized by gate insulating films | HB | CC | 5F110 | |
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.characterized by the materials | HB | CC | 5F110 | |
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.multiple layers | HB | CC | 5F110 | |
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Others | HB | CC | 5F110 | |
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...characterized by channel semiconductor layers | HB | CC | 5F110 | |
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characterized by the materials | HB | CC | 5F110 | |
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characterized by the shapes | HB | CC | 5F110 | |
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.thinning of film thickness | HB | CC | 5F110 | |
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multiple layers | HB | CC | 5F110 | |
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characterized by impurities and the concentrations of impurities | HB | CC | 5F110 | |
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.including impurities which do not act as carriers | HB | CC | 5F110 | |
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Others | HB | CC | 5F110 | |
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...characterized by passivation | HB | CC | 5F110 | |
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characterized by insulation films, e.g., the structures, the manufacturing methods, the materials | HB | CC | 5F110 | |
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characterized by light shielding films, e.g., the structures, the manufacturing methods, the materials | HB | CC | 5F110 | |
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Others | HB | CC | 5F110 | |
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...characterized by the selection of crystal orientation | HB | CC | 5F110 | |
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...characterized by isolation regions | HB | CC | 5F110 | |
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...characterized by operation | HB | CC | 5F110 | |
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...protective devices:protection circuits | HB | CC | 5F110 | |
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electrostatic breakdown prevention, e.g., electric breakdown prevention when ion implantation, labyrinth processes are performed | HB | CC | 5F110 | |
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Others | HB | CC | 5F110 | |
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...ISFET | HB | CC | 5F110 | |
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...Other structures | HB | CC | 5F110 | |
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vertical structures | HB | CC | 5F110 | |
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kink suppression | HB | CC | 5F110 | |
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characterized by the substrates including surface layers | HB | CC | 5F110 | |
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.substrates composed of SOS | HB | CC | 5F110 | |
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Others | HB | CC | 5F110 | |
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..Floating-gate IGFETs[2025.01] | HB | CC | 5F101 | |
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..IGFETs having charge trapping gate insulators, e.g. MNOS transistors[2025.01] | HB | CC | 5F101 | |
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.FETs having rectifying junction gate electrodes (H10D 30/40 takes precedence)[2025.01] | HB | CC | 5F102 | |
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kinds of elements | HB | CC | 5F102 | |
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.lateral SIT | HB | CC | 5F102 | |
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.vertical FET | HB | CC | 5F102 | |
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having Dual Gate structures | HB | CC | 5F102 | |
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having protective functions | HB | CC | 5F102 | |
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Others | HB | CC | 5F102 | |
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..FETs having PN junction gate electrodes[2025.01] | HB | CC | 5F102 | |
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..FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET][2025.01] | HB | CC | 5F102 | |
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MES type FET | HB | CC | 5F102 | |
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.characterized by electrodes | HB | CC | 5F102 | |
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..ohmic electrodes, e.g., source electrodes, drain electrodes | HB | CC | 5F102 | |
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..using oblique deposition | HB | CC | 5F102 | |
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..planar construction of electrodes | HB | CC | 5F102 | |
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..materials for gate electrodes | HB | CC | 5F102 | |
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..removal of backside electrodes | HB | CC | 5F102 | |
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.having high resistance layers on the surfaces | HB | CC | 5F102 | |
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.integrating matching circuits with feedback circuits | HB | CC | 5F102 | |
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.implementation | HB | CC | 5F102 | |
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.integration | HB | CC | 5F102 | |
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Others | HB | CC | 5F102 | |