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This page displays all 「FI」 in main group H10D62/00. |
HB:Handbook | ||||
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CC:Concordance | |||||
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Semiconductor bodies, or regions thereof, of devices having potential barriers[2025.01] | HB | CC | 5F121 | |
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.Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies[2025.01] | HB | CC | 5F121 | |
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..pressure proof structures | HB | CC | 5F139 | |
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forming grooves or tilted surfaces,e.g., mesa, bevels | HB | CC | 5F139 | |
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using field plates | HB | CC | 5F139 | |
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using semi-insulating films, high resistance films | HB | CC | 5F139 | |
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characterized by semiconductor regions, e.g., characterized by concentrations, shapes, sizes, arrangements of impurities (R takes precedence) | HB | CC | 5F139 | |
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.using guard rings, electric field limiting rings | HB | CC | 5F139 | |
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limiting curvature, such as the curvature of a section or a plane | HB | CC | 5F139 | |
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for vertical devices | HB | CC | 5F139 | |
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Others | HB | CC | 5F139 | |
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..special structures | HB | CC | 5F121 | |
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by manipulation of nanostructures, e.g., atom-level, molecular-level | HB | CC | 5F121 | |
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three-dimensional elements, e.g., spherical semiconductors | HB | CC | 5F121 | |
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Others | HB | CC | 5F121 | |
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..Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions[2025.01] | HB | CC | 5F121 | |
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..Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions[2025.01] | HB | CC | 5F121 | |
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.Crystalline structures[2025.01] | HB | CC | 5F121 | |
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.Physical imperfections[2025.01] | HB | CC | 5F121 | |
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..the imperfections being within the semiconductor body[2025.01] | HB | CC | 5F121 | |
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..the imperfections being on the surface of the semiconductor body, e.g. the body having a roughened surface[2025.01] | HB | CC | 5F121 | |
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.Impurity distributions or concentrations[2025.01] | HB | CC | 5F121 | |
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.characterised by the materials[2025.01] | HB | CC | 5F121 | |
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..of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation[2025.01] | HB | CC | 5F121 | |
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quantum wells | HB | CC | 5F121 | |
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quantum wires | HB | CC | 5F121 | |
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quantum dots;quantum islands | HB | CC | 5F121 | |
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Others | HB | CC | 5F121 | |
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...of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW][2025.01] | HB | CC | 5F121 | |
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..Heterojunctions[2025.01] | HB | CC | 5F121 | |
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...comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions[2025.01] | HB | CC | 5F121 | |
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...comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions[2025.01] | HB | CC | 5F121 | |
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...comprising only Group II-VI materials heterojunctions, e.g. CdTe/HgTe heterojunctions[2025.01] | HB | CC | 5F121 | |
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..being Group IV materials, e.g. B-doped Si or undoped Ge[2025.01] | HB | CC | 5F121 | |
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...being Group IV materials comprising two or more elements, e.g. SiGe[2025.01] | HB | CC | 5F121 | |
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...further characterised by the dopants[2025.01] | HB | CC | 5F121 | |
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..being selenium or tellurium only[2025.01] | HB | CC | 5F121 | |
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..being Group III-V materials, e.g. GaAs[2025.01] | HB | CC | 5F121 | |
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...being Group III-V materials comprising three or more elements, e.g. AlGaN or InAsSbP[2025.01] | HB | CC | 5F121 | |
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...further characterised by the dopants[2025.01] | HB | CC | 5F121 | |
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..being Group II-VI materials, e.g. ZnO[2025.01] | HB | CC | 5F121 | |
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...being Group II-VI materials comprising three or more elements, e.g. CdZnTe[2025.01] | HB | CC | 5F121 | |
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...further characterised by the dopants[2025.01] | HB | CC | 5F121 | |