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On this page, you can select 「MainGroup」 or 「Facet」 in H10B. |
HB:Handbook | ||||
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Select the desired 「MainGroup」 or 「facet」 etc. |
CC:Concordance | ||||
| Volatile memory devices[2023.01] | |||||
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Static random access memory [SRAM] devices [2023.01] | HB | CC | 5F083 | |
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Dynamic random access memory [DRAM] devices [2023.01] | HB | CC | 5F083 | |
| Non-volatile memory devices[2023.01] | |||||
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Read-only memory [ROM] devices [2023.01] | HB | CC | 5F083 | |
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Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates [2023.01] | HB | CC | 5F083 | |
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EEPROM devices comprising charge-trapping gate insulators [2023.01] | HB | CC | 5F083 | |
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Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors [2023.01] | HB | CC | 5F083 | |
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Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors [2023.01] | HB | CC | 5F083 | |
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Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices [2023.01] | HB | CC | 4M119 | |
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Resistance change memory devices, e.g. resistive RAM [ReRAM] devices [2023.01] | HB | CC | 5F083 | |
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Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B 41/00-H10B 63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices [2023.01] | HB | CC | 5F083 | |
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Assemblies of multiple devices comprising at least one memory device covered by this subclass [2023.01] | HB | CC | 5F037 | |
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Subject matter not provided for in other groups of this subclass [2023.01] | HB | CC | 5F083 | |