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  • H10B12/00
    		•  Dynamic random access memory [DRAM] devices [2023.01] HB CC 5F083
  • H10B12/00,601
    		•  .MOS transistor or DRAMs of a capacitor type HB CC 5F083
  • H10B12/00,611
    		•  ..Characterized by the structures of capacitors HB CC 5F083
  • H10B12/00,615
    		•  ...Capacitors of a planar type HB CC 5F083
  • H10B12/00,621
    		•  ...Stacked capacitors HB CC 5F083
  • H10B12/00,621@A
    		•  With fins formed laterally HB CC 5F083
  • H10B12/00,621@B
    		•  Using vertical planes HB CC 5F083
  • H10B12/00,621@C
    		•  .With dents in the surfaces of storage electrodes, e.g., capacitors of a crown type or of a CUP type HB CC 5F083
  • H10B12/00,621@Z
    		•  Other stacked capacitors, e.g., simple stacked capacitors or any kinds of alternative stacked capacitors HB CC 5F083
  • H10B12/00,625
    		•  ...Trench capacitors HB CC 5F083
  • H10B12/00,625@A
    		•  Using substrates as cell plates HB CC 5F083
  • H10B12/00,625@B
    		•  Using substrates as storage nodes HB CC 5F083
  • H10B12/00,625@C
    		•  Fixing cell plates and storage nodes respectively independently in trenches HB CC 5F083
  • H10B12/00,625@Z
    		•  Other trench capacitors HB CC 5F083
  • H10B12/00,631
    		•  ...Capacitors using depletion layer capacitance HB CC 5F083
  • H10B12/00,651
    		•  ...Characterized by capacitors' insulation films, e.g., characterized by the materials used to manufacture insulation films HB CC 5F083
  • H10B12/00,661
    		•  ...Other capacitors HB CC 5F083
  • H10B12/00,671
    		•  ..Characterized by the structures of transistors HB CC 5F083
  • H10B12/00,671@A
    		•  Vertical transistors HB CC 5F083
  • H10B12/00,671@B
    		•  .Transistors of a groove type HB CC 5F083
  • H10B12/00,671@C
    		•  With transistors formed on SOIs HB CC 5F083
  • H10B12/00,671@Z
    		•  Other transistors HB CC 5F083
  • H10B12/00,681
    		•  ..Others, e.g., characterized by the layout HB CC 5F083
  • H10B12/00,681@A
    		•  Characterized by the layout, structures or materials used for word lines HB CC 5F083
  • H10B12/00,681@B
    		•  Characterized by the layout, structures or materials used for bit lines HB CC 5F083
  • H10B12/00,681@C
    		•  Characterized by the layout, structures or materials used for earth wires or power supply lines HB CC 5F083
  • H10B12/00,681@D
    		•  Characterized by element isolation structures HB CC 5F083
  • H10B12/00,681@E
    		•  Characterized by the layout plans that specify chips as a whole or nearly as a whole HB CC 5F083
  • H10B12/00,681@F
    		•  Characterized by the structures or the layout of peripheral circuit parts HB CC 5F083
  • H10B12/00,681@G
    		•  .Characterized by sense amplifiers HB CC 5F083
  • H10B12/00,681@Z
    		•  Others HB CC 5F083
  • H10B12/00,691
    		•  ..Characterized by the prevention of malfunction HB CC 5F083
  • H10B12/00,801
    		•  .DRAMs other than MOS transistor or DRAMs of a capacitor type HB CC 5F083
  • H10B12/00,821
    		•  .DRAMs comprised of other transistors including MOS transistors HB CC 5F083
  • H10B12/00,841
    		•  .Structures of dynamic random access memories , except bipolar memories, MOS HB CC 5F083
  • H10B12/00,861
    		•  ..Junction or SIT transistor memories HB CC 5F083
  • H10B12/10
    		•  .DRAM devices comprising bipolar components [2023.01] HB CC 5F083
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