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  • H10B41/00
    		•  Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates [2023.01] HB CC 5F083
  • H10B41/10
    		•  .characterised by the top-view layout [2023.01] HB CC 5F083
  • H10B41/20
    		•  .characterised by three-dimensional arrangements, e.g. with cells on different height levels [2023.01] HB CC 5F083
  • H10B41/23
    		•  ..with source and drain on different levels, e.g. with sloping channels [2023.01] HB CC 5F083
  • H10B41/27
    		•  ...the channels comprising vertical portions, e.g. U-shaped channels [2023.01] HB CC 5F083
  • H10B41/30
    		•  .characterised by the memory core region [2023.01] HB CC 5F083
  • H10B41/35
    		•  ..with a cell select transistor, e.g. NAND [2023.01] HB CC 5F083
  • H10B41/40
    		•  .characterised by the peripheral circuit region [2023.01] HB CC 5F083
  • H10B41/41
    		•  ..of a memory region comprising a cell select transistor, e.g. NAND [2023.01] HB CC 5F083
  • H10B41/42
    		•  ..Simultaneous manufacture of periphery and memory cells [2023.01] HB CC 5F083
  • H10B41/43
    		•  ...comprising only one type of peripheral transistor [2023.01] HB CC 5F083
  • H10B41/44
    		•  ....with a control gate layer also being used as part of the peripheral transistor [2023.01] HB CC 5F083
  • H10B41/46
    		•  ....with an inter-gate dielectric layer also being used as part of the peripheral transistor [2023.01] HB CC 5F083
  • H10B41/47
    		•  ....with a floating-gate layer also being used as part of the peripheral transistor [2023.01] HB CC 5F083
  • H10B41/48
    		•  ....with a tunnel dielectric layer also being used as part of the peripheral transistor [2023.01] HB CC 5F083
  • H10B41/49
    		•  ...comprising different types of peripheral transistor [2023.01] HB CC 5F083
  • H10B41/50
    		•  .characterised by the boundary region between the core region and the peripheral circuit region [2023.01] HB CC 5F083
  • H10B41/60
    		•  .the control gate being a doped region, e.g. singlepoly memory cell [2023.01] HB CC 5F083
  • H10B41/70
    		•  .the floating gate being an electrode shared by two or more components [2023.01] HB CC 5F083
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