FI (list display)

  • H10B53/00
  • Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors [2023.01] HB CC 5F083
  • H10B53/10
  • . characterised by the top-view layout [2023.01] HB CC 5F083
  • H10B53/20
  • . characterised by the three-dimensional arrangements, e.g. with cells on different height levels [2023.01] HB CC 5F083
  • H10B53/30
  • . characterised by the memory core region [2023.01] HB CC 5F083
  • H10B53/40
  • . characterised by the peripheral circuit region [2023.01] HB CC 5F083
  • H10B53/50
  • . characterised by the boundary region between the core and peripheral circuit regions [2023.01] HB CC 5F083
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