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  • H01L27/00
    		•  Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (details thereof H01L 23/00, H01L 29/00-H01L 33/00, H10K, H10N; assemblies consisting of a plurality of individual solid state devices H01L 25/00) [2, 2006.01]
    		HB CC 5F081
  • H01L27/00,301
    		•  .Three-dimensional circuit elements HB CC 5F080
  • H01L27/00,301@A
    		•  Stacked types characterised by the element arrangements HB CC 5F080
  • H01L27/00,301@C
    		•  .Connecting structures HB CC 5F080
  • H01L27/00,301@H
    		•  .Heat release structures; Shield structures HB CC 5F080
  • H01L27/00,301@R
    		•  .Recrystalization techniques HB CC 5F080
  • H01L27/00,301@N
    		•  .Semiconductor intercalary types HB CC 5F080
  • H01L27/00,301@D
    		•  .Single crystal insulation layer intercalary types HB CC 5F080
  • H01L27/00,301@E
    		•  .Single crystal direct growth techniques HB CC 5F080
  • H01L27/00,301@S
    		•  .SIMOX HB CC 5F080
  • H01L27/00,301@L
    		•  .Wraparound oxidation HB CC 5F080
  • H01L27/00,301@F
    		•  .FIPOS HB CC 5F080
  • H01L27/00,301@P
    		•  .Stacked types of polycrystalline layers and amorphous layers HB CC 5F080
  • H01L27/00,301@Y
    		•  .Other structures HB CC 5F080
  • H01L27/00,301@B
    		•  Adhesion type HB CC 5F080
  • H01L27/00,301@W
    		•  Double Face type HB CC 5F080
  • H01L27/00,301@Z
    		•  Others HB CC 5F080
  • H01L27/01
    		•  .comprising only passive thin-film or thick-film elements formed on a common insulating substrate [3] HB CC 5F081
  • H01L27/01,301
    		•  ..Thick film circuits HB CC 5F081
  • H01L27/01,311
    		•  ..Thin film circuits HB CC 5F081
  • H01L27/01,321
    		•  ..Thick-film trimming; Thin-film trimming HB CC 5F081
  • H01L27/02
    		•  .including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers?; including integrated passive circuit elements having potential barriers?[2006.01] HB CC 5F081
  • H01L27/04
    		•  ..the substrate being a semiconductor body [2] HB CC 5F038
  • H01L27/04@A
    		•  Element layout on the substrate HB CC 5F038
  • H01L27/04@B
    		•  Analog voltage development circuits HB CC 5F038
  • H01L27/04@C
    		•  Capacitative elements HB CC 5F038
  • H01L27/04@D
    		•  Wires HB CC 5F038
  • H01L27/04@E
    		•  Functions or layout of the terminals HB CC 5F038
  • H01L27/04@F
    		•  Function; Operation HB CC 5F038
  • H01L27/04@G
    		•  Substrate bias generation; Charge pumping HB CC 5F038
  • H01L27/04@H
    		•  Protection HB CC 5F038
  • H01L27/04@L
    		•  Inductors; Inductance generation circuits HB CC 5F038
  • H01L27/04@M
    		•  Function switching HB CC 5F038
  • H01L27/04@P
    		•  Thin film resistance HB CC 5F038
  • H01L27/04@R
    		•  Diffusion resistance HB CC 5F038
  • H01L27/04@T
    		•  Test circuits; Inspection circuits HB CC 5F038
  • H01L27/04@U
    		•  Function block combinations, e.g. system LSI HB CC 5F038
  • H01L27/04@V
    		•  Variable impedance; Trimming HB CC 5F038
  • H01L27/04@Z
    		•  Others HB CC 5F038
  • H01L27/06
    		•  ...including a plurality of individual components in a non-repetitive configuration [2] HB CC 5F082
  • H01L27/06@F
    		•  Integrated circuits mainly using FETs excluding MOSFETs HB CC 5F082
  • H01L27/06@T
    		•  Integrated circuits mainly using thyristors HB CC 5F082
  • H01L27/06@Z
    		•  Others HB CC 5F082
  • H01L27/06,101
    		•  ....Bipolar elements as principle integrated circuits HB CC 5F082
  • H01L27/06,101@B
    		•  comprising bipolar transistors HB CC 5F082
  • H01L27/06,101@U
    		•  comprising bipolar and unipolar transistors HB CC 5F082
  • H01L27/06,101@S
    		•  Logic circuits comprising bipolar transistors and SITs HB CC 5F082
  • H01L27/06,101@D
    		•  comprising bipolar transistors and inductors, capacitors, resistors or diodes HB CC 5F082
  • H01L27/06,101@P
    		•  Circuits for protection HB CC 5F082
  • H01L27/06,101@Z
    		•  Others HB CC 5F082
  • H01L27/06,102
    		•  ....integrated circuits mainly using metal oxide semiconductor elements HB CC 5F048
  • H01L27/06,102@A
    		•  integrating MOS with passive elements or diodes HB CC 5F048
  • H01L27/06,102@Z
    		•  Others HB CC 5F048
  • H01L27/06,311
    		•  .....Circuits for protection HB CC 5F048
  • H01L27/06,311@A
    		•  protecting with resistors; characterised by the contacts HB CC 5F048
  • H01L27/06,311@B
    		•  using diodes [C takes precedence] HB CC 5F048
  • H01L27/06,311@C
    		•  protecting with MOS structure which may include bipolar devices HB CC 5F048
  • H01L27/06,311@Z
    		•  Others HB CC 5F048
  • H01L27/06,321
    		•  ....Integrated circuits mainly using BiMOS HB CC 5F048
  • H01L27/06,321@A
    		•  characterized by the entire body HB CC 5F048
  • H01L27/06,321@B
    		•  characterised by the bipolar transistors HB CC 5F048
  • H01L27/06,321@C
    		•  element separation HB CC 5F048
  • H01L27/06,321@D
    		•  Latch-up prevention HB CC 5F048
  • H01L27/06,321@E
    		•  Substrates; Wells; Buried layers HB CC 5F048
  • H01L27/06,321@F
    		•  Contacts; Electrodes; Wires HB CC 5F048
  • H01L27/06,321@G
    		•  characterized by circuit structure HB CC 5F048
  • H01L27/06,321@H
    		•  .Multiplex function elements comprising BiMOS HB CC 5F048
  • H01L27/06,321@J
    		•  .applied for particular applications, e.g. logic circuits or memories HB CC 5F048
  • H01L27/06,321@Z
    		•  Others HB CC 5F048
  • H01L27/06,331
    		•  ....Substrate bias circuits HB CC 5F048
  • H01L27/07
    		•  ....the components having an active region in common [5] HB CC 5F082
  • H01L27/07,101
    		•  .....Integrated circuits including bipolar transistors (H01L27/07, 102 takes precedence) HB CC 5F082
  • H01L27/07,102
    		•  .....Integrated circuits including MOS HB CC 5F048
  • H01L27/08
    		•  ...including only semiconductor components of a single kind [2] HB CC 5F082
  • H01L27/082
    		•  ....including bipolar components only [5] HB CC 5F082
  • H01L27/082@B
    		•  comprising a bipolar transistor HB CC 5F082
  • H01L27/082@L
    		•  Logic circuits comprising a bipolar transistor HB CC 5F082
  • H01L27/082@M
    		•  .IIL HB CC 5F082
  • H01L27/082@J
    		•  ..Injectors HB CC 5F082
  • H01L27/082@N
    		•  ..Inverters HB CC 5F082
  • H01L27/082@W
    		•  ..Circuits including IIL HB CC 5F082
  • H01L27/082@T
    		•  comprising bipolar transistors with different characteristics HB CC 5F082
  • H01L27/082@C
    		•  NPN type and PNP type combination HB CC 5F082
  • H01L27/082@V
    		•  Vertical type and horizontal type combination HB CC 5F082
  • H01L27/082@D
    		•  in a Darlington configuration HB CC 5F082
  • H01L27/082@Z
    		•  Others HB CC 5F082
  • H01L27/085
    		•  ....including field-effect components only [5] HB CC 5F048
  • H01L27/088
    		•  .....the components being field-effect transistors with insulated gate [5] HB CC 5F048
  • H01L27/088@A
    		•  characterised by the entire MOS HB CC 5F048
  • H01L27/088@B
    		•  Channels, sources or drains HB CC 5F048
  • H01L27/088@C
    		•  Gate electrodes or gate insulating layers HB CC 5F048
  • H01L27/088@D
    		•  Contacts; Electrodes; Wires HB CC 5F048
  • H01L27/088@E
    		•  Stacked MOS; Vertical MOS HB CC 5F048
  • H01L27/088@F
    		•  Protection circuits for MOSIC HB CC 5F048
  • H01L27/088@H
    		•  Memories; Logic circuits HB CC 5F048
  • H01L27/088@J
    		•  characterised by the circuit configuration HB CC 5F048
  • H01L27/088@Z
    		•  Others HB CC 5F048
  • H01L27/088,311
    		•  ......EDMOS; EEMOS HB CC 5F048
  • H01L27/088,311@A
    		•  characterised by the entire elements HB CC 5F048
  • H01L27/088,311@Z
    		•  Others HB CC 5F048
  • H01L27/088,331
    		•  ......Prevention of parasitic-effect, e.g. device isolation HB CC 5F048
  • H01L27/088,331@A
    		•  Dielectric isolation HB CC 5F048
  • H01L27/088,331@B
    		•  Channel stoppers; Guard rings HB CC 5F048
  • H01L27/088,331@C
    		•  Substrates; Buried layers HB CC 5F048
  • H01L27/088,331@D
    		•  Wells HB CC 5F048
  • H01L27/088,331@E
    		•  SOS; SOI HB CC 5F048
  • H01L27/088,331@F
    		•  Diodes or resistors as device isolation HB CC 5F048
  • H01L27/088,331@G
    		•  provided with bias voltage HB CC 5F048
  • H01L27/088,331@Z
    		•  Others HB CC 5F048
  • H01L27/092
    		•  ......complementary MIS field-effect transistors [5] HB CC 5F048
  • H01L27/092@A
    		•  characterised by the entire CMOS HB CC 5F048
  • H01L27/092@B
    		•  Wells; Substrates; Buried layers HB CC 5F048
  • H01L27/092@C
    		•  Channels HB CC 5F048
  • H01L27/092@D
    		•  Gate electrodes or gate insulating layers HB CC 5F048
  • H01L27/092@E
    		•  Sources or drains HB CC 5F048
  • H01L27/092@F
    		•  Contacts; Electrodes; Wires HB CC 5F048
  • H01L27/092@G
    		•  Stacked MOS; Vertical MOS HB CC 5F048
  • H01L27/092@H
    		•  Protection circuits for CMOS HB CC 5F048
  • H01L27/092@K
    		•  Memories; Logic circuits HB CC 5F048
  • H01L27/092@L
    		•  characterised by the circuit configuration HB CC 5F048
  • H01L27/092@N
    		•  Simplification of manufacturing process HB CC 5F048
  • H01L27/092@Z
    		•  Others HB CC 5F048
  • H01L27/095
    		•  .....the components being Schottky barrier gate field-effect transistors [5] HB CC 5F082
  • H01L27/098
    		•  .....the components being PN junction gate field-effect transistors [5] HB CC 5F082
  • H01L27/10
    		•  ...including a plurality of individual components in a repetitive configuration [2] HB CC 5F083
  • H01L27/102
    		•  ....including bipolar components [5, 2006.01, 2023.01] HB CC 5F083
  • H01L27/105
    		•  ....including field-effect components [5, 2006.01, 2023.01] HB CC 5F083
  • H01L27/118
    		•  ....Masterslice integrated circuits [5] HB CC 5F048
  • H01L27/118,101
    		•  .....Integrated circuits including bipolar transistors; Integrated circuits including FETs (H01L27/118, 102 takes precedence) HB CC 5F082
  • H01L27/118,102
    		•  .....Integrated circuits including MOS HB CC 5F048
  • H01L27/12
    		•  ..the substrate being other than a semiconductor body, e.g. an insulating body [2] HB CC 5F084
  • H01L27/12@A
    		•  Active matrixes HB CC 5F084
  • H01L27/12@B
    		•  Contact type SOI HB CC 5F084
  • H01L27/12@C
    		•  Connections; Wiring HB CC 5F084
  • H01L27/12@D
    		•  Single crystal insulation films HB CC 5F084
  • H01L27/12@E
    		•  Epitaxial growth directly on insulating films; Insulated films by ion-implantation HB CC 5F084
  • H01L27/12@F
    		•  Element isolation; Area isolation HB CC 5F084
  • H01L27/12@G
    		•  Semi-insulation types, e.g. GaAs HB CC 5F084
  • H01L27/12@H
    		•  Multi-crystalline supports HB CC 5F084
  • H01L27/12@K
    		•  Circuits for protection HB CC 5F084
  • H01L27/12@L
    		•  Layout HB CC 5F084
  • H01L27/12@P
    		•  Polycrystalline active layers; Amorphous layers HB CC 5F084
  • H01L27/12@Q
    		•  Super lattices HB CC 5F084
  • H01L27/12@R
    		•  Re-crystallization HB CC 5F084
  • H01L27/12@S
    		•  SOS HB CC 5F084
  • H01L27/12@T
    		•  Testing; Inspection HB CC 5F084
  • H01L27/12@Z
    		•  Others HB CC 5F084
  • H01L27/13
    		•  ...combined with thin-film or thick-film passive components [3] HB CC 5F081
  • H01L27/14
    		•  .including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation (radiation-sensitive components structurally associated with one or more electric light sources only H01L31/14; couplings of light guides with optoelectronic elements G02B6/42) [2] HB CC 4M118
  • H01L27/142
    		•  ..Energy conversion devices (photovoltaic modules or arrays of single photovoltaic cells comprising bypass diodes integrated or directly associated with the devices H01L31/0443; photovoltaic modules composed of a plurality of thin film solar cells deposited on the same substrate H01L31/046) [5, 2014.01] HB CC 4M118
  • H01L27/144
    		•  ..Devices controlled by radiation [5] HB CC 4M118
  • H01L27/144@K
    		•  Imagers for special application; Photodetectors for specific applications HB CC 4M118
  • H01L27/144@J
    		•  .Photodetectors for optical communication HB CC 4M118
  • H01L27/144@Z
    		•  Others HB CC 4M118
  • H01L27/146
    		•  ...Imager structures [5] HB CC 4M118
  • H01L27/146@A
    		•  Planar imagers, e.g. MOS type, FET type, SIT type or CPD type HB CC 4M118
  • H01L27/146@G
    		•  .Charge-injection devices [CID] type HB CC 4M118
  • H01L27/146@F
    		•  .Hybrid imagers HB CC 4M118
  • H01L27/146@E
    		•  ..Photoconductive layer lamination type HB CC 4M118
  • H01L27/146@C
    		•  Thin film imagers HB CC 4M118
  • H01L27/146@D
    		•  Packages; Filters; Chips; Surface layers HB CC 4M118
  • H01L27/146@Z
    		•  Others HB CC 4M118
  • H01L27/148
    		•  ....Charge coupled imagers [5] HB CC 4M118
  • H01L27/148@B
    		•  CCD type, e.g. FT system, IL system, LA system, CS system, cross gate system or one dimension use HB CC 4M118
  • H01L27/148@H
    		•  .Time delay integration [TDI] type HB CC 4M118
  • H01L27/148@Z
    		•  Others HB CC 4M118
  • H01L27/15
    		•  .including semiconductor components having potential barriers?, specially adapted for light emission[2006.01] HB CC 5F097
  • H01L27/15@A
    		•  Characterised by integration with other elements HB CC 5F097
  • H01L27/15@B
    		•  .Integration with drive elements or optical modulator HB CC 5F097
  • H01L27/15@C
    		•  .Integration with waveguide measures for discharge light, e.g. optical waveguide or optical switch elements HB CC 5F097
  • H01L27/15@D
    		•  .Integration with photo-detectors HB CC 5F097
  • H01L27/15@T
    		•  Three-dimensional optical integrated circuits HB CC 5F097
  • H01L27/15@S
    		•  Optical signal circuits HB CC 5F097
  • H01L27/15@H
    		•  Hybrid devices; Mountings HB CC 5F097
  • H01L27/15@Z
    		•  Others HB CC 5F097
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