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5F082 | Bipolar integrated circuits | |
H10D84/60 -84/67;84/86-84/87;84/90,101 |
H01L27/06,101@B;27/06,101@U;27/06,101@D;27/06,101@P;27/06,101@Z;27/07,101;27/082-27/082@Z;27/118,101 | AA | AA00 OBJECTIVES OF INTEGRATED CIRCUIT TECHNOLOGY |
AA01 | AA02 | AA03 | AA04 | AA06 | AA08 | AA10 | |||
. Improvement of maximum rating | . . Higher insulation properties | . . Improvement of current driving capability (e.g., fan-out, etc.) | . . Higher transistor power | . Higher speed (i.e., higher frequency) | . Higher integration | . Conservation of power | ||||||
AA11 | AA13 | AA14 | AA15 | AA16 | AA17 | AA18 | AA19 | AA20 | ||||
. Improvement of circuit performance characteristics | . . Improvement of current amplification factor | . . . Improvement of injection efficiency | . . . Improvement of carrier moving speed | . . Reduction of saturation voltage | . . Reduction of leakage current | . . Lowering of noise | . . Improvement of temperature characteristics | . . Improvement of IIL injector transistors | ||||
AA21 | AA22 | AA24 | AA25 | AA26 | AA27 | |||||||
. Reduction of current dispersion | . . Improvement of offset | . Reduction of parasitism effect | . . Reduction of parasitic capacity | . . Reduction of parasitic transistor effect | . . Reduction of parasitic thyristor (i.e., latch-up) | |||||||
AA31 | AA32 | AA33 | AA35 | AA36 | AA38 | AA40 | ||||||
. Protection and preventive measures | . . Prevention of short-circuit | . . Prevention of power surge | . Prevention of malfunction | . . Prevention of crosstalk | . Improvement of inspection efficiency and yield | . Other objectives of integrated circuit technology | ||||||
BA | BA00 INTEGRATED CIRCUIT ELEMENT STRUCTURE |
BA01 | BA02 | BA03 | BA04 | BA05 | BA06 | BA07 | BA08 | BA09 | BA10 | |
. Separation of integrated circuit elements | . . By means of pn junctions (i.e., entire surface) | . . By means of insulators ( i.e., side surface) | . . . By means of selective oxidation (e.g., LOCOS, etc.) | . . . By means of groove filling (e.g., V-groove, U-groove) | . . By means of insulators (i.e., entire surface) | . . By means of channel stoppers | . . By means of insulator materials | . . . With nitride as insulator material | . . . With Oxide as insulator material | |||
BA11 | BA12 | BA13 | BA14 | BA16 | BA17 | BA18 | BA19 | |||||
. Buried layers in semiconductor structure | . . Multi-stage buried layers | . . Impurities in buried layers | . . . Variation of impurities and other substances from one buried layer to another | . Colored layersy | . Floating layers | . Application of external electric field(other than electrodes) to integrated circuits | . Arrangement of integrated circuit elements | |||||
BA21 | BA22 | BA23 | BA24 | BA26 | BA27 | BA28 | BA29 | |||||
. Collectors | . . Distribution of collector concentration | . . Collector resistance | . . Multi-collectors | . Transistor base | . . Distribution of concentration in transistor base region | . . Transistor base resistance | . . Transistor base width | |||||
BA31 | BA32 | BA33 | BA35 | BA36 | BA37 | BA38 | BA39 | BA40 | ||||
. Transistor emitters | . . Distribution of concentration in transistor emitter region | . . Multi-emitters | . Transistor emitter-base characteristics | . . Emitter-base region separation | . . Schottky junctions | . Transistor collector-base characteristics | . . Collector-base region separation | . . Schottky junctions | ||||
BA41 | BA42 | BA43 | BA44 | BA47 | BA48 | BA50 | ||||||
. Vertical pnp transistors | . IIL inverter transistors | . IIL injector transistors | . . IIL injectors with elements other than Bip transistors | . Cross-sectional patterns of integrated circuit element structure | . Flat-surface patternsy | . Other integrated circuit element structures | ||||||
BC | BC00 MOUNTING OF INTEGRATED CIRCUIT ELEMENTS |
BC01 | BC03 | BC04 | BC06 | BC08 | BC09 | |||||
. Bip transistor (i.e., single) mountings | . Bip transistor (i.e., plural) mountings | . . Complementary bipolar transistor mountings | . SIT mountings | . FET mountings | . . MOSFET mountings | |||||||
BC11 | BC12 | BC13 | BC14 | BC15 | BC16 | BC17 | BC18 | BC20 | ||||
. D (diode) mountings | . . Schottky diode mountings | . C (capacitor) mountings | . L mountings | . R (resistor) mountings | . . Diffusion resistance mountings | . . . Pinch resistance mountings | . . Thin film resistor mountings | . Other integrated circuit mounting elements | ||||
CA | CA00 INTEGRATED CIRCUIT SUBSTRATE MATERIALS |
CA01 | CA02 | CA03 | CA05 | CA06 | CA07 | CA08 | ||||
. IV family (excluding Si) substrates | . III-V family substrates | . Substrates of three or more dimensions | . Crystal structure substrates | . . Crystal direction substrates | . . Non-monocrystal substrates | . . . Amorphous crystal substrates | ||||||
DA | DA00 INTEGRATED CIRCUIT ELECTRODES AND WIRING |
DA01 | DA02 | DA03 | DA05 | DA06 | DA07 | DA09 | DA10 | |||
. Integrated circuit electrodes | . . Flat surface pattern of electrodes | . . Cross-sectional shape of electrodes | . Electrode wiring | . . Flat surface pattern of electrode wiring | . . Multi-layer electrode wiring | . Electrode and wiring materials | . . Polycrystal materials for electrodes and wiring | |||||
EA | EA00 INTEGRATED CIRCUIT MANUFACTURING METHODS |
EA01 | EA02 | EA03 | EA04 | EA05 | EA06 | EA07 | EA08 | EA09 | EA10 | |
. Introduction of impurities into semiconductor materials | . . Diffusing methods | . . . Duplex diffusing method | . . . Solid phase diffusion method | . . . . Diffusing source with insulator | . . . Vapor phase diffusion | . . . Diffusing direction | . . . Diffusing substances | . . Ion implantation | . . Concentration | |||
EA11 | EA12 | EA13 | EA14 | EA15 | EA16 | EA17 | EA18 | EA20 | ||||
. Patterning processes for generating integrated circuit line features | . . Etching processes for patterning | . . . Dry etching processes for patterning | . . . Wet etching processes for patterning | . . . Anisotropic etching processes for patterning | . . . Isotropic etching processes for patterning | . . . Side etching processes for patterning | . . . Using difference of etching rates in patterning | . . Lift off | ||||
EA21 | EA22 | EA23 | EA24 | EA25 | EA26 | EA27 | EA28 | EA29 | ||||
. Pile | . . Epitaxial growth | . . . Molecular beam epitaxial growth | . . . Selective adherend and selective growth | . . . Polycrystals and single crystals | . . . Epitaxial process performed more than once and by dissimilar materials | . . CVD | . . PVD (i.e., physical deposition) | . . . Spatter | ||||
EA31 | EA32 | EA33 | EA34 | EA35 | EA36 | |||||||
. Insulating of integrated circuits | . . By means of oxidation | . . . By means of thermal oxidation | . . . By means of anodic oxidation | . . . By means of plasma oxidation | . . By means of nitride | |||||||
EA41 | EA42 | EA45 | EA46 | EA47 | EA50 | |||||||
. Exposure | . . Masks | . Annealing | . . Local annealing | . . . Laser or electron beam annealing | . Other integrated circuit manufacturing methods | |||||||
FA | FA00 INTEGRATED CIRCUITS |
FA01 | FA02 | FA03 | FA05 | FA06 | FA07 | FA08 | FA09 | |||
. Composite circuits | . . Darlington circuits | . . Differential pairs of circuits | . Logical circuits | . . CML and ECL circuits | . . DTL and TTL circuits | . . IIL and MTL circuits | . . Flip-flop circuits | |||||
FA11 | FA12 | FA13 | FA14 | FA15 | FA16 | FA17 | FA18 | FA20 | ||||
. Functional circuits | . . Inverter circuits | . . Output circuits | . . Transmission switch (i.e., duplex transmission) circuits | . . Memory cell circuits | . . Protecting circuits | . . Power supply circuits | . . Oscillation circuits | . Other circuits | ||||
GA | GA00 TECHNICAL DRAWINGS FOR CIRCUITS |
GA01 | GA02 | GA03 | GA04 | GA05 | ||||||
. Impurity distribution charts | . Front elevation and flat surface pattern drawings | . Sectional drawings in more than one direction | . Circuit diagrams | . Band figures | ||||||||
HA | HA00 CIRCUIT DIAGRAM 1 |
HA02 | HA03 | HA04 | HA05 | HA06 | HA07 | HA08 | HA09 | HA10 | ||
. Transistor C/Transistor 1E | . Transistor B/Transistor 1C | . Transistor B/Transistor 1E | . Transistor C/Transistor 2E | . Transistor B/Transistor 2C | . Transistor B/Transistor2E | . Transistor B/Transistor 3 | . Transistor B/the same one | . Transistor B/series one | ||||
HA12 | HA13 | HA14 | HA15 | HA16 | HA17 | HA18 | HA19 | HA20 | ||||
. Transistor-B/Transistor 1B | . Transistor-B/Transistor 1C | . Transistor-B/Transistor 2B | . Transistor-B/Transistor 2B | . Transistor-B/Transistor 2C | . Transistor-B/Transistor 2E | . Transistor-B/Transistor 3 | . Transistor-B/the same one | . Transistor-B/series one | ||||
HA22 | HA23 | HA24 | HA25 | HA26 | HA27 | HA28 | HA29 | HA30 | ||||
. Transistor-C/Transistor 1B | . Transistor-C/Transistor 1C | . Transistor-C/Transistor 1E | . Transistor-C/Transistor 2B | . Transistor-C/Transistor 2C | . Transistor-C/Transistor 2E | . Transistor-C/Transistor 3 | . Transistor-C/the same one | . Transistor-C/series one | ||||
HA32 | HA33 | HA34 | HA35 | HA36 | HA37 | HA38 | HA39 | HA40 | ||||
. Transistor-E/Transistor 1B | . Transistor-E/Transistor 1C | . Transistor-E/Transistor 1E | . Transistor-E/Transistor 2B | . Transistor-E/Transistor 2C | . Transistor-E/Transistor 2E | . Transistor-E/Transistor 3 | . Transistor-E/the same one | . Transistor-E/series one | ||||
HA42 | HA43 | HA44 | HA45 | HA46 | HA47 | HA48 | HA49 | HA50 | ||||
. R/Transistor 1B | . R/Transistor 1C | . R/Transistor 1E | . R/Transistor 2B | . R/Transistor 2C | . R/Transistor 2E | . R/Transistor 3 | . R/the same one | . R/series one | ||||
HA52 | HA53 | HA54 | HA55 | HA56 | HA57 | HA58 | HA59 | HA60 | ||||
. D/Transistor 1B | . D/Transistor 1C | . D/Transistor 1E | . D/Transistor 2B | . D/Transistor 2C | . D/Transistor 2E | . D/Transistor 3 | . D/the same one | . D/series one | ||||
HA62 | HA63 | HA64 | HA65 | HA66 | HA67 | HA68 | HA69 | HA70 | ||||
. C, L/Transistor 1B | . C, L/Transistor 1C | . C, L/Transistor 1E | . C, L/Transistor 2B | . C, L/Transistor 2C | . C, L/Transistor 2E | . C, L/Transistor 3 | . C, L/the same one | . C, L/series one | ||||
HB | HB00 CIRCUIT DIAGRAM 2 |
HB02 | HB03 | HB04 | HB05 | HB06 | HB07 | HB08 | HB09 | HB10 | ||
. V/Transistor 1B | . V/Transistor 1C | . V/Transistor 1E | . V/Transistor 2B | . V/Transistor 2C | . V/Transistor 2E | . V/Transistor 3 | . V/the same one | . V/series one | ||||
HB12 | HB13 | HB14 | HB15 | HB16 | HB17 | HB18 | HB19 | HB20 | ||||
. Grounding/Transistor 1B | . Grounding /Transistor 1C | . Grounding/Transistor 1E | . Grounding/Transistor 2B | . Grounding/Transistor 2C | . Grounding /Transistor 2E | . Grounding/Transistor 3 | . Grounding/the same one | . Grounding/series one | ||||
HB22 | HB23 | HB24 | HB25 | HB26 | HB27 | HB28 | HB29 | HB30 | ||||
. Input/Transistor 1B | . Input/Transistor 1C | . Input/Transistor 1E | . Input/ Transistor 2B | . Input/Transistor 2C | . Input/Transistor 2E | . Input/Transistor 3 | . Input/the same one | . Input/series one | ||||
HB32 | HB33 | HB34 | HB35 | HB36 | HB37 | HB38 | HB39 | HB40 | ||||
. Output/Transistor 1B | . Output/Transistor 1C | . Output/Transistor 1E | . Output/Transistor 2B | . Output/Transistor 2C | . Output/Transistor 2E | . Output/Transistor 3 | . Output/the same one | . Output/series one | ||||
HB42 | HB43 | HB44 | HB45 | HB46 | HB47 | HB48 | HB49 | HB50 | ||||
. Series/Transistor 1 | . Series/Transistor 1 | . Series/Transistor 1 | . Series/Transistor 2 | . Series/Transistor 2 | . Series/Transistor 2 | . Series/Transistor 3 | . Series/the same one | . Series/series one | ||||
HB52 | HB53 | HB54 | HB55 | HB56 | HB57 | HB58 | HB59 | HB60 | ||||
. Multi/Transistor 1B | . Multi/Transistor 1C | . Multi/Transistor 1E | . Multi/Transistor 2B | . Multi/Transistor 2C | . Multi/Transistor 2E | . Multi/Transistor 3 | . Multi/the same one | . Multi/series one | ||||
HB62 | HB63 | HB65 | HB66 | |||||||||
. pnp | . npn | . pnp | . npn |