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  • H01L21/00
    		•  Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    		HB CC 5F117
  • H01L21/02
    		•  .Manufacture or treatment of semiconductor devices or of parts thereof (characterised by the use of organic materials H01L 51/40) [2] HB CC 5F117
  • H01L21/02@A
    		•  Information for distinguishing, e.g. means for marking, attaching wafer marks, attaching carrier marks HB CC 5F117
  • H01L21/02@B
    		•  Shapes or construction of wafers or pellets, e.g. related wafer lamination, crack prevention or crystal orientation HB CC 5F117
  • H01L21/02@C
    		•  Wafer reinforcement [reinforcement material backing] HB CC 5F117
  • H01L21/02@D
    		•  Clean benches or drafting devices, e.g. small clean rooms or garbage removal (air conditioning or clean rooms F24F) HB CC 5F117
  • H01L21/02@Z
    		•  Others [excluding production control, process controls, and static electricity removal] HB CC 5F117
  • H01L21/04
    		•  ..the devices having potential barriers?, e.g. a PN junction, depletion layer or carrier concentration layer[2006.01] HB CC 5F117
  • H01L21/18
    		•  ...the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table? or AIIIBV compounds with or without impurities, e.g. doping materials[2006.01]
    		HB CC 5F152
  • H01L21/20
    		•  ....Deposition of semiconductor materials on a substrate, e.g. epitaxial growth [2] HB CC 5F152
  • H01L21/203
    		•  .....using physical deposition, e.g. vacuum deposition, sputtering [2] HB CC 5F103
  • H01L21/203@M
    		•  due to molecular beams, electron beams, and ion beams of the materials HB CC 5F103
  • H01L21/203@S
    		•  due to sputtering HB CC 5F103
  • H01L21/203@Z
    		•  Others HB CC 5F103
  • H01L21/205
    		•  .....using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition [2] HB CC 5F045
  • H01L21/208
    		•  .....using liquid deposition [2] HB CC 5F053
  • H01L21/208@D
    		•  Taping HB CC 5F053
  • H01L21/208@S
    		•  Sliding HB CC 5F053
  • H01L21/208@L
    		•  .Wafers placed horizontally HB CC 5F053
  • H01L21/208@V
    		•  VLS method HB CC 5F053
  • H01L21/208@Z
    		•  Others HB CC 5F053
  • H01L21/22
    		•  ....Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions; Redistribution of impurity materials, e.g. without introduction or removal of further dopant [2] HB CC 5F042
  • H01L21/22@C
    		•  Semiconductor compounds from groups 3 to 5 [GaAsP, InGaP, semiconductor lasers] HB CC 5F042
  • H01L21/22@E
    		•  High energy treatment and diffusion combinations [laser beams, electron beams, ion beams, plasma treatment and their combinations HB CC 5F042
  • H01L21/22@P
    		•  Treatment of pre-deposition layers [pre-deposition drive-in, 2-stage diffusion HB CC 5F042
  • H01L21/22@S
    		•  Selective diffusion [mask diffusion, partial diffusion] HB CC 5F042
  • H01L21/22@T
    		•  .characterized by means for HB CC 5F042
  • H01L21/22@U
    		•  .Transverse spread diffusion HB CC 5F042
  • H01L21/22@V
    		•  .Preferential diffusion with slots HB CC 5F042
  • H01L21/22@W
    		•  .Porous selective diffusion [selective diffusion with porous substrates, double diffusion] HB CC 5F042
  • H01L21/22@X
    		•  .Diffusion alignment, self-alignment HB CC 5F042
  • H01L21/22@Y
    		•  Diffusion preliminary treatment and subsequent treatment HB CC 5F042
  • H01L21/22@Z
    		•  Others [simple processing] HB CC 5F042
  • H01L21/22,501
    		•  .....Horizontal diffusion devices HB CC 5F042
  • H01L21/22,501@D
    		•  Horizontal diffusion devices characterized by construction HB CC 5F042
  • H01L21/22,501@A
    		•  .characterized by heating HB CC 5F042
  • H01L21/22,501@L
    		•  ..Heating by light HB CC 5F042
  • H01L21/22,501@C
    		•  .characterized by cooling HB CC 5F042
  • H01L21/22,501@B
    		•  .characterized by diffusion port transfer HB CC 5F042
  • H01L21/22,501@S
    		•  .characterized by gas introduction and emission paths HB CC 5F042
  • H01L21/22,501@F
    		•  .having insulators HB CC 5F042
  • H01L21/22,501@G
    		•  .Wafer support equipment HB CC 5F042
  • H01L21/22,501@H
    		•  .having auxiliary tubes HB CC 5F042
  • H01L21/22,501@J
    		•  .Wafer transfer HB CC 5F042
  • H01L21/22,501@K
    		•  .Reactor core cleaning HB CC 5F042
  • H01L21/22,501@M
    		•  .Materials for reactor core or wafer support equipment HB CC 5F042
  • H01L21/22,501@N
    		•  .characterized by heat measuring processes HB CC 5F042
  • H01L21/22,501@R
    		•  .Rotating support equipment for furnace casings or wafers HB CC 5F042
  • H01L21/22,501@Z
    		•  Others HB CC 5F042
  • H01L21/22,511
    		•  .....Vertical diffusion devices HB CC 5F042
  • H01L21/22,511@Q
    		•  characterized by construction of vertical diffusion equipment HB CC 5F042
  • H01L21/22,511@A
    		•  .characterized by ways of heating and cooling HB CC 5F042
  • H01L21/22,511@B
    		•  .characterized by diffusion port transfer HB CC 5F042
  • H01L21/22,511@S
    		•  .characterized by gas introduction and emission paths HB CC 5F042
  • H01L21/22,511@G
    		•  .Wafer support equipment HB CC 5F042
  • H01L21/22,511@H
    		•  .having auxiliary tubes HB CC 5F042
  • H01L21/22,511@J
    		•  .Wafer transfer HB CC 5F042
  • H01L21/22,511@M
    		•  .Materials for reactor core or wafer support equipment HB CC 5F042
  • H01L21/22,511@R
    		•  .Rotating support equipment for furnace casings or wafers HB CC 5F042
  • H01L21/22,511@Z
    		•  Others HB CC 5F042
  • H01L21/223
    		•  .....using diffusion into, or out of, a solid from or into a gaseous phase [2] HB CC 5F042
  • H01L21/223@A
    		•  using out diffusion [from solid phase to gaseous phase] HB CC 5F042
  • H01L21/223@B
    		•  Dispersion units characterized by vavra [evaporation from liquid] HB CC 5F042
  • H01L21/223@C
    		•  Semiconductor compounds from groups 3 to 5 HB CC 5F042
  • H01L21/223@T
    		•  Sealed tube diffusion HB CC 5F042
  • H01L21/223@U
    		•  Semi-sealed tube diffusion [box method] HB CC 5F042
  • H01L21/223@V
    		•  Reduced diffusion including diffusion while creating a vacuum HB CC 5F042
  • H01L21/223@W
    		•  characterized by the arrangement of wafer [slanting arrangement, confrontation arrangement, etc.]. HB CC 5F042
  • H01L21/223@X
    		•  characterized by solid form diffusion source distribution HB CC 5F042
  • H01L21/223@Y
    		•  characterized by the structure and material of the source of solid-like diffusion [Source board of diffusion of the same form as wafer, and lamination structure] HB CC 5F042
  • H01L21/223@Z
    		•  Others HB CC 5F042
  • H01L21/225
    		•  .....using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer [2] HB CC 5F042
  • H01L21/225@C
    		•  Semiconductor compounds from groups 3 to 5 HB CC 5F042
  • H01L21/225@D
    		•  characterized by diffusion sources [other than diffusion sources listed below] HB CC 5F042
  • H01L21/225@M
    		•  .Metal and metal compound [silicide, etc., and electrode] HB CC 5F042
  • H01L21/225@N
    		•  .Metallic nitrided films HB CC 5F042
  • H01L21/225@P
    		•  .Doped (poly) silicon [diffusion from silicon, including single crystals other than polysilicon] HB CC 5F042
  • H01L21/225@Q
    		•  .Doped oxide HB CC 5F042
  • H01L21/225@R
    		•  by using the application method [including, diffusion source vapour deposition, and spin-on film mounting] HB CC 5F042
  • H01L21/225@S
    		•  by using pressure welding [pressure welding of diffusion materials with wafers] HB CC 5F042
  • H01L21/225@Z
    		•  Others HB CC 5F042
  • H01L21/228
    		•  .....using diffusion into, or out of, a solid from or into a liquid phase, e.g. alloy diffusion processes [2] HB CC 5F042
  • H01L21/24
    		•  ....Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body [2] HB CC 5F042
  • H01L21/26
    		•  ....Bombardment with wave or particle radiation [2] HB CC 5F054
  • H01L21/26@E
    		•  Lamp irradiation (Film formation is predominantly classified in H01L 21/203, 21/205, 21/31 and 21/285. Etching is in H01L 21/302 and 21/306.) HB CC 5F054
  • H01L21/26@F
    		•  .Lamp annealing (Annealing during crystal growth is predominantly classified in H01L 21/20. Annealing during ion implantation is in H01L 21/265 and 602B.) HB CC 5F054
  • H01L21/26@G
    		•  .Devices for lamp irradiation HB CC 5F054
  • H01L21/26@J
    		•  ..Systems for lamp irradiation HB CC 5F054
  • H01L21/26@Q
    		•  ..Wafer support equipment HB CC 5F054
  • H01L21/26@T
    		•  .Measuring and control HB CC 5F054
  • H01L21/26@N
    		•  Nuclide conversion due to radiation irradiation HB CC 5F054
  • H01L21/26@Z
    		•  Others HB CC 5F054
  • H01L21/263
    		•  .....with high-energy radiation [2] HB CC 5F054
  • H01L21/263@E
    		•  Electron beam irradiation (Film formation is predominantly classified in H01L 21/203, 21/205, 21/31 and 21/285. Etching is in H01L 21/302 and 21/306. Exposure is in H01L 21/30 and 541.) HB CC 5F054
  • H01L21/263@F
    		•  .Annealing (Annealing during crystal growth is predominantly classified in H01L 21/20. Annealing during ion implantation is in H01L 21/265 and 602Z.) HB CC 5F054
  • H01L21/263@Z
    		•  Others HB CC 5F054
  • H01L21/265
    		•  ......producing ion implantation [2] HB CC 5F054
  • H01L21/265@F
    		•  plural placing and plural ion injection, plasma ion injection HB CC 5F054
  • H01L21/265@H
    		•  Ion injection via protective films HB CC 5F054
  • H01L21/265@J
    		•  Formation of insulation areas and high-resistance areas HB CC 5F054
  • H01L21/265@K
    		•  Knock-on HB CC 5F054
  • H01L21/265@M
    		•  characterized by ion injection masks HB CC 5F054
  • H01L21/265@N
    		•  Electric charge removal [using electron beams H01J37/20@G, H01J37/317@Z HB CC 5F054
  • H01L21/265@P
    		•  Polysilicon ion injection HB CC 5F054
  • H01L21/265@Q
    		•  Ion injection to improve crystalline nature HB CC 5F054
  • H01L21/265@R
    		•  Lateral ion injection HB CC 5F054
  • H01L21/265@T
    		•  Measuring and control [see the relevant place of H01J37/317C] HB CC 5F054
  • H01L21/265@U
    		•  Channeling HB CC 5F054
  • H01L21/265@V
    		•  Oblique ion injection HB CC 5F054
  • H01L21/265@W
    		•  characterized by using only special purpose ion injection HB CC 5F054
  • H01L21/265@Y
    		•  Ion injection to the ion film HB CC 5F054
  • H01L21/265@Z
    		•  Others HB CC 5F054
  • H01L21/265,601
    		•  .......Semiconductor compounds from groups 3 to 5 HB CC 5F054
  • H01L21/265,601@A
    		•  Annealing HB CC 5F054
  • H01L21/265,601@H
    		•  Ion injection via protective films HB CC 5F054
  • H01L21/265,601@J
    		•  Formation of insulation areas and high-resistance areas HB CC 5F054
  • H01L21/265,601@Q
    		•  Ion injection to improve crystalline nature HB CC 5F054
  • H01L21/265,601@S
    		•  Self-alignment [source and drain shapes, LDD construction] HB CC 5F054
  • H01L21/265,601@Z
    		•  Others HB CC 5F054
  • H01L21/265,602
    		•  .......Annealing, radiation irradiation HB CC 5F054
  • H01L21/265,602@A
    		•  Heaters HB CC 5F054
  • H01L21/265,602@B
    		•  Lamps HB CC 5F054
  • H01L21/265,602@C
    		•  Lasers HB CC 5F054
  • H01L21/265,602@Z
    		•  Others HB CC 5F054
  • H01L21/265,603
    		•  .......Devices for ion injection HB CC 5F054
  • H01L21/265,603@A
    		•  Ion sources and accelerators HB CC 5F054
  • H01L21/265,603@B
    		•  Separation section, lens section, scanning section [see the relevant place of H01J37/147, H01J37/317] HB CC 5F054
  • H01L21/265,603@C
    		•  Injection chambers [see the relevant place of H01J37/317including spare chambers and transportation] HB CC 5F054
  • H01L21/265,603@D
    		•  .Wafer holders HB CC 5F054
  • H01L21/265,603@Z
    		•  Others HB CC 5F054
  • H01L21/265,604
    		•  .......Self alignment HB CC 5F054
  • H01L21/265,604@G
    		•  characterized by source and drain shapes HB CC 5F054
  • H01L21/265,604@V
    		•  .Oblique ion injection of ion beams HB CC 5F054
  • H01L21/265,604@M
    		•  .Mask construction [using side walls, etc.] HB CC 5F054
  • H01L21/265,604@X
    		•  Oxide film interfaces HB CC 5F054
  • H01L21/265,604@Z
    		•  Others HB CC 5F054
  • H01L21/268
    		•  ......using electromagnetic radiation, e.g. laser radiation [2] HB CC 5F054
  • H01L21/268@E
    		•  Laser beam irradiation (Film formation is predominantly classified in H01L 21/203, 21/205, 21/31 and 21/285. Etching is in H01L 21/302 and 21/306.) HB CC 5F054
  • H01L21/268@F
    		•  .Laser annealing (Annealing during crystal growth is predominantly classified in H01L 21/20. Annealing during ion implantation is in H01L 21/265 and 602C.) HB CC 5F054
  • H01L21/268@G
    		•  .Devices for laser beam irradiation HB CC 5F054
  • H01L21/268@J
    		•  ..Beam irradiation systems HB CC 5F054
  • H01L21/268@T
    		•  .Measuring and control HB CC 5F054
  • H01L21/268@Z
    		•  Others HB CC 5F054
  • H01L21/28
    		•  ....Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L 21/20-H01L 21/268 [2] HB CC 4M104
  • H01L21/283
    		•  .....Deposition of conductive or insulating materials for electrodes [2] HB CC 4M104
  • H01L21/285
    		•  ......from a gas or vapour, e.g. condensation [2] HB CC 4M104
  • H01L21/285@P
    		•  Vacuum vapour deposition method HB CC 4M104
  • H01L21/285@S
    		•  Sputter deposition method HB CC 4M104
  • H01L21/285@C
    		•  CVD method HB CC 4M104
  • H01L21/285@Z
    		•  Others HB CC 4M104
  • H01L21/285,301
    		•  .......for use when electrode materials are limited HB CC 4M104
  • H01L21/288
    		•  ......from a liquid, e.g. electrolytic deposition [2] HB CC 4M104
  • H01L21/288@M
    		•  Limited to electrode deposition materials HB CC 4M104
  • H01L21/288@E
    		•  using electroplating HB CC 4M104
  • H01L21/288@Z
    		•  Others HB CC 4M104
  • H01L21/30
    		•  ....Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L 21/20-H01L 21/26 (manufacture of electrodes thereon H01L 21/28) [2] HB CC 5F146
  • H01L21/30,501
    		•  .....Semi-conductor body exposure HB CC 5F146
  • H01L21/30,502
    		•  ......having common items such as ultraviolet radiation, X-radiation, and electron beam exposure HB CC 5F146
  • H01L21/30,502@A
    		•  Exposure by plural kinds of light beams HB CC 5F146
  • H01L21/30,502@C
    		•  Exposure of 2 degrees or more by identical light beams HB CC 5F146
  • H01L21/30,502@D
    		•  Exposure using other kinds of light beams HB CC 5F146
  • H01L21/30,502@G
    		•  Exposure control, detection, and display HB CC 5F146
  • H01L21/30,502@H
    		•  Temperature regulation HB CC 5F146
  • H01L21/30,502@J
    		•  Conveyance HB CC 5F146
  • H01L21/30,502@M
    		•  Alignment marking HB CC 5F146
  • H01L21/30,502@P
    		•  Exposure masks HB CC 5F146
  • H01L21/30,502@R
    		•  Resist materials HB CC 5F146
  • H01L21/30,502@V
    		•  Pattern detection HB CC 5F146
  • H01L21/30,502@W
    		•  Pattern correction HB CC 5F146
  • H01L21/30,502@Z
    		•  Others HB CC 5F146
  • H01L21/30,503
    		•  ......Exposure device details, general accessories HB CC 5F146
  • H01L21/30,503@A
    		•  Stages (reticule frames) HB CC 5F146
  • H01L21/30,503@B
    		•  .for step and repeat HB CC 5F146
  • H01L21/30,503@C
    		•  Wafer chucks HB CC 5F146
  • H01L21/30,503@D
    		•  Mask (reticule) retention HB CC 5F146
  • H01L21/30,503@E
    		•  Wafer or mask receipt HB CC 5F146
  • H01L21/30,503@F
    		•  Vibration prevention HB CC 5F146
  • H01L21/30,503@G
    		•  Trash removal HB CC 5F146
  • H01L21/30,503@Z
    		•  Others HB CC 5F146
  • H01L21/30,504
    		•  ......Ultraviolet, far ultraviolet, and visible light radiation exposure HB CC 5F146
  • H01L21/30,505
    		•  .......Tight exposure HB CC 5F146
  • H01L21/30,506
    		•  ........Alignment HB CC 5F146
  • H01L21/30,506@A
    		•  Mark shape, construction, and manufacture HB CC 5F146
  • H01L21/30,506@B
    		•  .Crossed HB CC 5F146
  • H01L21/30,506@C
    		•  .Bar shape HB CC 5F146
  • H01L21/30,506@D
    		•  .Shaped like two vertical bars leaning towards one another HB CC 5F146
  • H01L21/30,506@E
    		•  .Grating HB CC 5F146
  • H01L21/30,506@F
    		•  ..Fresnel's zone plate HB CC 5F146
  • H01L21/30,506@G
    		•  Mark placement (alignment) HB CC 5F146
  • H01L21/30,506@H
    		•  Movement of stages and such due to mark detection results HB CC 5F146
  • H01L21/30,506@J
    		•  due to wafer marks and mask marks HB CC 5F146
  • H01L21/30,506@K
    		•  due to wafer masks and reference marks HB CC 5F146
  • H01L21/30,506@L
    		•  due to mask marks and reference marks HB CC 5F146
  • H01L21/30,506@M
    		•  using vibration HB CC 5F146
  • H01L21/30,506@N
    		•  due to exposure on both sides HB CC 5F146
  • H01L21/30,506@Z
    		•  Others HB CC 5F146
  • H01L21/30,507
    		•  .........Mark detection (details) HB CC 5F146
  • H01L21/30,507@A
    		•  Optical HB CC 5F146
  • H01L21/30,507@B
    		•  .Light sources for detection HB CC 5F146
  • H01L21/30,507@C
    		•  ..Light scanning HB CC 5F146
  • H01L21/30,507@D
    		•  ..Exposure light HB CC 5F146
  • H01L21/30,507@E
    		•  ..Exposure safety light HB CC 5F146
  • H01L21/30,507@F
    		•  ..Lasers (light scanning takes precedence) HB CC 5F146
  • H01L21/30,507@G
    		•  ..Selection from among 2 or more wave lengths HB CC 5F146
  • H01L21/30,507@H
    		•  .light-receiving devices for detection HB CC 5F146
  • H01L21/30,507@J
    		•  ..TV cameras HB CC 5F146
  • H01L21/30,507@K
    		•  ..Rectilinear light-receiving sensor arrays HB CC 5F146
  • H01L21/30,507@L
    		•  .Optical systems for detection HB CC 5F146
  • H01L21/30,507@M
    		•  ..Chromatic aberration correction (optical path length correction) HB CC 5F146
  • H01L21/30,507@N
    		•  ..l/4 plates HB CC 5F146
  • H01L21/30,507@P
    		•  ..Dark field HB CC 5F146
  • H01L21/30,507@Q
    		•  .Visual HB CC 5F146
  • H01L21/30,507@R
    		•  Information processing of detected alignment marks HB CC 5F146
  • H01L21/30,507@S
    		•  Mark retention during exposure HB CC 5F146
  • H01L21/30,507@T
    		•  Having means for pre-alignment, having 2 or more types for alignment HB CC 5F146
  • H01L21/30,507@U
    		•  Handling mark exposure HB CC 5F146
  • H01L21/30,507@V
    		•  Display of alignment results (forms) HB CC 5F146
  • H01L21/30,507@Z
    		•  Others HB CC 5F146
  • H01L21/30,508
    		•  ........Mask and wafer retention movement due to alignment HB CC 5F146
  • H01L21/30,508@A
    		•  weight directly on the wafer surface HB CC 5F146
  • H01L21/30,508@Z
    		•  Others HB CC 5F146
  • H01L21/30,509
    		•  .......Proximity exposure HB CC 5F146
  • H01L21/30,510
    		•  ........Alignment HB CC 5F146
  • H01L21/30,511
    		•  ........Mask and wafer spacing adjustment or parallelization degree control HB CC 5F146
  • H01L21/30,512
    		•  .......Projection exposure (reticule) HB CC 5F146
  • H01L21/30,513
    		•  ........General HB CC 5F146
  • H01L21/30,514
    		•  .........having step and repeat exposure and reduced projection in common HB CC 5F146
  • H01L21/30,514@A
    		•  Secondary exposure (double exposure) HB CC 5F146
  • H01L21/30,514@B
    		•  Exposure sequence, exposure position HB CC 5F146
  • H01L21/30,514@C
    		•  Exposure process HB CC 5F146
  • H01L21/30,514@D
    		•  Combined with conveyance HB CC 5F146
  • H01L21/30,514@E
    		•  Combined with processing equipment and machines HB CC 5F146
  • H01L21/30,514@F
    		•  Substrate information exposure HB CC 5F146
  • H01L21/30,514@Z
    		•  Others HB CC 5F146
  • H01L21/30,515
    		•  ..........Exposure device details HB CC 5F146
  • H01L21/30,515@A
    		•  Light sources for detection HB CC 5F146
  • H01L21/30,515@B
    		•  .Lasers (light scanning takes precedence) HB CC 5F146
  • H01L21/30,515@C
    		•  .Discharge lamps HB CC 5F146
  • H01L21/30,515@D
    		•  Optical systems for detection HB CC 5F146
  • H01L21/30,515@E
    		•  .Shutters HB CC 5F146
  • H01L21/30,515@F
    		•  Reticule and reticule stages HB CC 5F146
  • H01L21/30,515@G
    		•  Wafer stages HB CC 5F146
  • H01L21/30,515@Z
    		•  Others HB CC 5F146
  • H01L21/30,516
    		•  ..........Control, regulation, detection, and display HB CC 5F146
  • H01L21/30,516@A
    		•  Magnification regulation, optical path length correction, warp correction HB CC 5F146
  • H01L21/30,516@B
    		•  Step and repeat stage movement and control HB CC 5F146
  • H01L21/30,516@C
    		•  Exposure light or other light detection HB CC 5F146
  • H01L21/30,516@D
    		•  Exposure amount (time) control HB CC 5F146
  • H01L21/30,516@E
    		•  Temperature control and detection HB CC 5F146
  • H01L21/30,516@F
    		•  Pressure and atmosphere control HB CC 5F146
  • H01L21/30,516@Z
    		•  Others HB CC 5F146
  • H01L21/30,517
    		•  .........Reflex projection exposure, magnified projection exposure HB CC 5F146
  • H01L21/30,518
    		•  ..........using scanning HB CC 5F146
  • H01L21/30,519
    		•  .........Pattern generators HB CC 5F146
  • H01L21/30,520
    		•  ........Alignment HB CC 5F146
  • H01L21/30,520@A
    		•  With pre-alignment, with alignment of 2 or more types HB CC 5F146
  • H01L21/30,520@B
    		•  Wafer mark section exposure and retention HB CC 5F146
  • H01L21/30,520@C
    		•  Display of alignment results (forms) HB CC 5F146
  • H01L21/30,520@Z
    		•  Others HB CC 5F146
  • H01L21/30,521
    		•  .........Projection exposure alignment using marks HB CC 5F146
  • H01L21/30,522
    		•  ..........Mark alignment shapes, structure, and construction HB CC 5F146
  • H01L21/30,522@A
    		•  Crossed HB CC 5F146
  • H01L21/30,522@B
    		•  Bar shape HB CC 5F146
  • H01L21/30,522@C
    		•  Shaped like two vertical bars leaning towards one another HB CC 5F146
  • H01L21/30,522@D
    		•  Grating HB CC 5F146
  • H01L21/30,522@E
    		•  .Fresnel's zone plate HB CC 5F146
  • H01L21/30,522@Z
    		•  Others HB CC 5F146
  • H01L21/30,523
    		•  ..........Placement (array)of alignment marks (including stage marks) HB CC 5F146
  • H01L21/30,524
    		•  ..........for magnification projection and exposure HB CC 5F146
  • H01L21/30,525
    		•  ..........for step and repeat projection exposure HB CC 5F146
  • H01L21/30,525@A
    		•  Other than transistor-transistor logic HB CC 5F146
  • H01L21/30,525@B
    		•  with wafer marks and reference marks HB CC 5F146
  • H01L21/30,525@C
    		•  with mask marks and reference marks HB CC 5F146
  • H01L21/30,525@D
    		•  with wafer marks and mask marks (process) HB CC 5F146
  • H01L21/30,525@E
    		•  .Detection of alignment marks HB CC 5F146
  • H01L21/30,525@F
    		•  ..Optically HB CC 5F146
  • H01L21/30,525@G
    		•  ...Light sources for detection HB CC 5F146
  • H01L21/30,525@H
    		•  ...Light scanning HB CC 5F146
  • H01L21/30,525@J
    		•  ...Exposure light or other light detection HB CC 5F146
  • H01L21/30,525@K
    		•  ...Exposure safety light HB CC 5F146
  • H01L21/30,525@L
    		•  ...Lasers (light scanning takes precedence) HB CC 5F146
  • H01L21/30,525@M
    		•  ...Selection from among 2 or more wave lengths HB CC 5F146
  • H01L21/30,525@N
    		•  ..light-receiving devices for detection HB CC 5F146
  • H01L21/30,525@P
    		•  ...TV cameras HB CC 5F146
  • H01L21/30,525@Q
    		•  ...Direct radiation light-receiving sensor arrays HB CC 5F146
  • H01L21/30,525@R
    		•  ..Optical systems for detection HB CC 5F146
  • H01L21/30,525@S
    		•  ...Chromatic aberration correction (optical path length correction) HB CC 5F146
  • H01L21/30,525@T
    		•  ...[lambda]/4 plates HB CC 5F146
  • H01L21/30,525@U
    		•  ...Dark field HB CC 5F146
  • H01L21/30,525@V
    		•  ..Visual HB CC 5F146
  • H01L21/30,525@W
    		•  Information processing of detected alignment marks HB CC 5F146
  • H01L21/30,525@X
    		•  Stage movement due to mark detection results HB CC 5F146
  • H01L21/30,525@Z
    		•  Others HB CC 5F146
  • H01L21/30,526
    		•  ........Focusing (parallelization degree control) HB CC 5F146
  • H01L21/30,526@A
    		•  for light HB CC 5F146
  • H01L21/30,526@B
    		•  .for grazing light HB CC 5F146
  • H01L21/30,526@Z
    		•  Others HB CC 5F146
  • H01L21/30,527
    		•  .......Devices for illumination HB CC 5F146
  • H01L21/30,528
    		•  .......Interference exposure and holography exposure HB CC 5F146
  • H01L21/30,529
    		•  .......Beam exposure HB CC 5F146
  • H01L21/30,531
    		•  ......X-radiation exposure HB CC 5F146
  • H01L21/30,531@A
    		•  Devices for X-radiation exposure HB CC 5F146
  • H01L21/30,531@E
    		•  Processes for X-radiation exposure HB CC 5F146
  • H01L21/30,531@J
    		•  Alignment HB CC 5F146
  • H01L21/30,531@M
    		•  Masks for X-radiation exposure HB CC 5F146
  • H01L21/30,531@S
    		•  X-radiation sources HB CC 5F146
  • H01L21/30,531@Z
    		•  Others HB CC 5F146
  • H01L21/30,541
    		•  ......Electron beam exposure HB CC 5F056
  • H01L21/30,541@A
    		•  Systems for electron optics HB CC 5F056
  • H01L21/30,541@B
    		•  .Convergence and deflection equipment for electron guns, apertures, and ranking electrodes HB CC 5F056
  • H01L21/30,541@C
    		•  Control systems HB CC 5F056
  • H01L21/30,541@J
    		•  .Draughting processes (by control of scanning) HB CC 5F056
  • H01L21/30,541@M
    		•  .Draughting processes (by controlling dose and irradiation shape) HB CC 5F056
  • H01L21/30,541@D
    		•  .Control of beam irradiation position HB CC 5F056
  • H01L21/30,541@E
    		•  .Control of beam dose and irradiation shape HB CC 5F056
  • H01L21/30,541@V
    		•  System regulation HB CC 5F056
  • H01L21/30,541@F
    		•  .Focus adjustment processes HB CC 5F056
  • H01L21/30,541@H
    		•  .Shaft adjustment processes HB CC 5F056
  • H01L21/30,541@U
    		•  Measuring systems HB CC 5F056
  • H01L21/30,541@N
    		•  .Measuring of beam HB CC 5F056
  • H01L21/30,541@K
    		•  .Measuring of alignment mark positions HB CC 5F056
  • H01L21/30,541@G
    		•  Mirror body systems HB CC 5F056
  • H01L21/30,541@L
    		•  .Cassettes for sample rooms, sample stands, and sample conveyance HB CC 5F056
  • H01L21/30,541@P
    		•  Sample processing HB CC 5F056
  • H01L21/30,541@Q
    		•  Electron beam exposure with variable reshaping beams HB CC 5F056
  • H01L21/30,541@R
    		•  Electron beam exposure with fixed reshaping beams HB CC 5F056
  • H01L21/30,541@S
    		•  Electron beam exposure with pattern masks HB CC 5F056
  • H01L21/30,541@T
    		•  Electron beam exposure with photo cathodes HB CC 5F056
  • H01L21/30,541@W
    		•  Electron beam exposure with plural beams HB CC 5F056
  • H01L21/30,541@Z
    		•  Others HB CC 5F056
  • H01L21/30,551
    		•  ......Ion beam exposure HB CC 5F056
  • H01L21/30,561
    		•  ......Resist film processing HB CC 5F146
  • H01L21/30,562
    		•  .......General items HB CC 5F146
  • H01L21/30,563
    		•  .......Processing before resist application, resist adhesion strengthening films HB CC 5F146
  • H01L21/30,564
    		•  .......Resist application HB CC 5F146
  • H01L21/30,564@C
    		•  Devices for rotation application HB CC 5F146
  • H01L21/30,564@D
    		•  Processes for rotation application HB CC 5F146
  • H01L21/30,564@Z
    		•  Others devices for application HB CC 5F146
  • H01L21/30,565
    		•  .......Processing after resist application and before exposure [excluding baking] HB CC 5F146
  • H01L21/30,566
    		•  ........General baking or prebaking HB CC 5F146
  • H01L21/30,567
    		•  ........Devices for baking (drying) HB CC 5F146
  • H01L21/30,568
    		•  .......Processing after exposure and before development (graft polymerization) HB CC 5F146
  • H01L21/30,569
    		•  .......Developing and rinsing HB CC 5F146
  • H01L21/30,569@A
    		•  Wet process HB CC 5F146
  • H01L21/30,569@B
    		•  .Development tanks (dipping) HB CC 5F146
  • H01L21/30,569@C
    		•  .Rotation processing HB CC 5F146
  • H01L21/30,569@D
    		•  .accompanying conveyance HB CC 5F146
  • H01L21/30,569@E
    		•  .Development fluids and rinse fluids HB CC 5F146
  • H01L21/30,569@F
    		•  .Processes for development HB CC 5F146
  • H01L21/30,569@G
    		•  .Detection of development end point HB CC 5F146
  • H01L21/30,569@H
    		•  .Dry processes HB CC 5F146
  • H01L21/30,569@Z
    		•  Others HB CC 5F146
  • H01L21/30,570
    		•  .......Processing after development (excluding baking) HB CC 5F146
  • H01L21/30,571
    		•  ........Post baking (heat + infrared radiation) HB CC 5F146
  • H01L21/30,572
    		•  ........Resist coating stripping HB CC 5F146
  • H01L21/30,572@A
    		•  Dry processes HB CC 5F146
  • H01L21/30,572@B
    		•  Wet process HB CC 5F146
  • H01L21/30,572@Z
    		•  Others HB CC 5F146
  • H01L21/30,573
    		•  .......Plural layer resist coatings HB CC 5F146
  • H01L21/30,574
    		•  .......Antireflection coatings and reflective coatings (absorption coatings) HB CC 5F146
  • H01L21/30,575
    		•  .......Resist protective coatings (surface coatings) HB CC 5F146
  • H01L21/30,576
    		•  .......Resist pattern overhang, inclined HB CC 5F146
  • H01L21/30,577
    		•  .......Wafer perimeter resist stripping HB CC 5F146
  • H01L21/30,578
    		•  .......Flattening (planariazation) HB CC 5F146
  • H01L21/30,579
    		•  .......using calcogen HB CC 5F146
  • H01L21/302
    		•  .....to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting [2] HB CC 5F004
  • H01L21/302,100
    		•  ......Plasma etching HB CC 5F004
  • H01L21/302,101
    		•  .......Plasma etching systems HB CC 5F004
  • H01L21/302,101@B
    		•  Parallel flat plate systems (including capacitive couplilng type, RIE, two-frequency systems) HB CC 5F004
  • H01L21/302,101@C
    		•  Inductive coupling systems (incluidng TCP (R), ICP, helicon wave systems) HB CC 5F004
  • H01L21/302,101@D
    		•  Microwave and UHF wave exciting systems (incluidng ECR, cavity resonance systems; including systems generally using microwaves) HB CC 5F004
  • H01L21/302,101@E
    		•  Local plasma (including atmospheric discharge, PACE, chemical vapor machining (CVM)) HB CC 5F004
  • H01L21/302,101@F
    		•  Wafer lamination batch processing systems (including barrel, etching tunnel systems) HB CC 5F004
  • H01L21/302,101@G
    		•  Common items between systems (including substrate cooling mechanisms, heating mechanisms, eletrostatic chucks, pipes, process-to-process transportation, process simulation, combination with other semiconductor menufacturing faciliteis) HB CC 5F004
  • H01L21/302,101@H
    		•  .System cleaning (including wall cleaning, aging) HB CC 5F004
  • H01L21/302,101@M
    		•  .Improvemnet of maintenability (technology necessary for disassembly and cleaning of systems and replacement of consumable parts) HB CC 5F004
  • H01L21/302,101@L
    		•  .Mateial of electrodes (including inventions for designating electrode materials such as glassy carbons or describing electrode formation methods) HB CC 5F004
  • H01L21/302,101@R
    		•  .Back side gas supply (including technologies for supplying thermally conductive gas to the portion that will closely cotact back face of treated substrate to improve thernal conduction) HB CC 5F004
  • H01L21/302,101@Z
    		•  Others HB CC 5F004
  • H01L21/302,102
    		•  .......Substrate cleaning (plasma clenaing including substrate surface cleaning; plasma cleaning H01L21/302 and 106) HB CC 5F004
  • H01L21/302,103
    		•  .......End point detection and monitoring (for etching end poin detection and plasma monitoring (spectroscopic analysis, mass detection, detected waveform processing)) HB CC 5F004
  • H01L21/302,104
    		•  .......Etched substnace HB CC 5F004
  • H01L21/302,104@C
    		•  Etching of conductive materials (including aluminum) HB CC 5F004
  • H01L21/302,104@H
    		•  Etching of organic substance (resist ashing,, ashiing removal and plasma-free resist ashing are execptionally added to this FI) HB CC 5F004
  • H01L21/302,104@Z
    		•  Others HB CC 5F004
  • H01L21/302,105
    		•  .......Special processing HB CC 5F004
  • H01L21/302,105@A
    		•  Patterning (including patterning having features on patterning itself, e.g. sililation, and not having etched substance in application examples or plasma-free chargeup prevention) HB CC 5F004
  • H01L21/302,105@B
    		•  Full surface etching (having features on etch back or planarization and not having etched substance in application examples) HB CC 5F004
  • H01L21/302,105@Z
    		•  Others HB CC 5F004
  • H01L21/302,106
    		•  .......Post plasma treatment (having unique features on plasma-based post etching treatments, plasma-based chargeup prevention or the like) HB CC 5F004
  • H01L21/302,201
    		•  ......Plasma-free etching HB CC 5F004
  • H01L21/302,201@A
    		•  Plasma-free vapor phase etching (ethcing by means of contact with high temperature gas or vapor etching, e.g. etcing with HF gas and H20) HB CC 5F004
  • H01L21/302,201@B
    		•  Energy beam etching (including FIB, focused ion beam, or electron beam etching; H01L21/302 and 101 take precedence for ion shower and RIBE using plasma ion source) . HB CC 5F004
  • H01L21/302,201@Z
    		•  Others HB CC 5F004
  • H01L21/302,301
    		•  ......Base material layer (structure, etching gas or the like invented to increase selectivity between etched layer and lower unetched layer) HB CC 5F004
  • H01L21/302,301@S
    		•  Base material layer is silicon oxide film HB CC 5F004
  • H01L21/302,301@N
    		•  Base mateial layer is silicon nitride film HB CC 5F004
  • H01L21/302,301@M
    		•  Base material layer is metal film HB CC 5F004
  • H01L21/302,301@G
    		•  .Base material layer is aluminum HB CC 5F004
  • H01L21/302,301@Z
    		•  Others HB CC 5F004
  • H01L21/302,400
    		•  ......Others (not used as a basic rule; if proper FI items are not found in plasma etching, H01l21/302 or 101 is applied; if proper FI items are not found in ion beam, H01L21/302 or 201is applied) HB CC 5F004
  • H01L21/304
    		•  ......Mechanical treatment, e.g. grinding, polishing, cutting [2] HB CC 5F057
  • H01L21/304,601
    		•  .......Mechanical processing (in general, B24B and B28D) HB CC 5F057
  • H01L21/304,601@S
    		•  using sand blasting and liquid spraying HB CC 5F057
  • H01L21/304,601@H
    		•  using cleavage HB CC 5F057
  • H01L21/304,601@M
    		•  Mound removal [assigned to H01L21/304 for grinding] HB CC 5F057
  • H01L21/304,601@B
    		•  Substrate chamfering, mesa, beveling, and slotting HB CC 5F057
  • H01L21/304,601@Z
    		•  Others HB CC 5F057
  • H01L21/304,611
    		•  ........Slicing HB CC 5F057
  • H01L21/304,611@S
    		•  using revolving blades [e.g. inside perimeter blades and outside perimeter blades] HB CC 5F057
  • H01L21/304,611@W
    		•  using wire-saws or reciprocating blades HB CC 5F057
  • H01L21/304,611@B
    		•  pre-treatment of slicing [e.g. ingot orientation and ingot pedestals] HB CC 5F057
  • H01L21/304,611@A
    		•  post-treatment of slicing [e.g. wafer reception after slicing] HB CC 5F057
  • H01L21/304,611@Z
    		•  Others [e.g. occurring along with other wafer processing (diffusion, adhesion)] HB CC 5F057
  • H01L21/304,621
    		•  ........Polishing [in general, B24] HB CC 5F057
  • H01L21/304,621@A
    		•  Polishing of both surfaces HB CC 5F057
  • H01L21/304,621@B
    		•  Polishing of one surface HB CC 5F057
  • H01L21/304,621@C
    		•  .using grindstones HB CC 5F057
  • H01L21/304,621@D
    		•  .using abrasives [e.g. carboxymethyl cellulose] HB CC 5F057
  • H01L21/304,621@E
    		•  polishing of substrate edges [e.g. edges, chamfers, orifices, and notches] HB CC 5F057
  • H01L21/304,621@Z
    		•  Others [e.g. polishing in dry atmospheres] HB CC 5F057
  • H01L21/304,622
    		•  .........Polishing details or common items HB CC 5F057
  • H01L21/304,622@A
    		•  Abrasives HB CC 5F057
  • H01L21/304,622@B
    		•  .Particulates HB CC 5F057
  • H01L21/304,622@C
    		•  .Liquids HB CC 5F057
  • H01L21/304,622@D
    		•  .Particulate and liquid compounds [e.g. using slurry regimes] HB CC 5F057
  • H01L21/304,622@E
    		•  Abrasive feeding and recovery HB CC 5F057
  • H01L21/304,622@F
    		•  Polishing cloths, polishing sheets [including grindstones] HB CC 5F057
  • H01L21/304,622@G
    		•  Substrate retention for polishing devices HB CC 5F057
  • H01L21/304,622@H
    		•  .using adsorption [e.g. vacuum chucks] HB CC 5F057
  • H01L21/304,622@J
    		•  .using adhesion [e.g. protective coats] HB CC 5F057
  • H01L21/304,622@K
    		•  .Substrate pressing force control [e.g. pressing force due to fluids] HB CC 5F057
  • H01L21/304,622@L
    		•  mounting and removal of substrates to and from polishing devices [see the relevant places of 21/68N, 21/78P, and 21/78M] HB CC 5F057
  • H01L21/304,622@M
    		•  Polishing cloth toothing [dressing] HB CC 5F057
  • H01L21/304,622@N
    		•  Preliminary treatment grinding HB CC 5F057
  • H01L21/304,622@P
    		•  Subsequent treatment grinding HB CC 5F057
  • H01L21/304,622@Q
    		•  .Substrate cleaning HB CC 5F057
  • H01L21/304,622@R
    		•  Polishing control and adjustment [e.g. number of revolutions, temperature, cooling] HB CC 5F057
  • H01L21/304,622@S
    		•  Detecting end point, measuring coat thickness, flatness HB CC 5F057
  • H01L21/304,622@T
    		•  Shape and construction of substrate to be polished HB CC 5F057
  • H01L21/304,622@W
    		•  .Substrates other than Si, SOI substrates, laminated substrates, etc. HB CC 5F057
  • H01L21/304,622@X
    		•  .Wiring and insulating films between layers HB CC 5F057
  • H01L21/304,622@Y
    		•  .Substrate edges, notches, orifices, etc. HB CC 5F057
  • H01L21/304,622@Z
    		•  Others HB CC 5F057
  • H01L21/304,631
    		•  ........Abrasives [in general, B24B] HB CC 5F057
  • H01L21/304,641
    		•  .......Washing [in general, B08B; for chemical liquid application in general B05C; for resist and development fluid application, 21/30] HB CC 5F157
  • H01L21/304,642
    		•  ........dipping in washing tanks HB CC 5F157
  • H01L21/304,642@A
    		•  single tanks HB CC 5F157
  • H01L21/304,642@B
    		•  plural tanks HB CC 5F157
  • H01L21/304,642@C
    		•  .Movable washing fluids for between tanks HB CC 5F157
  • H01L21/304,642@D
    		•  moving substrates during washing HB CC 5F157
  • H01L21/304,642@E
    		•  using ultrasonic waves HB CC 5F157
  • H01L21/304,642@F
    		•  having nozzles HB CC 5F157
  • H01L21/304,642@Z
    		•  Others [e.g. washing other than substrates][carrier washing 648E] HB CC 5F157
  • H01L21/304,643
    		•  ........using nozzles and sprays HB CC 5F157
  • H01L21/304,643@A
    		•  revolving substrates HB CC 5F157
  • H01L21/304,643@B
    		•  moving substrates HB CC 5F157
  • H01L21/304,643@C
    		•  characteristics of nozzles themselves HB CC 5F157
  • H01L21/304,643@D
    		•  .using nozzles HB CC 5F157
  • H01L21/304,643@Z
    		•  Others [e.g. particle spraying, washing other than substrates, nozzle washing] [carrier washing 648E] HB CC 5F157
  • H01L21/304,644
    		•  ........Scrub washing [e.g. brushing, sponging] HB CC 5F157
  • H01L21/304,644@A
    		•  revolving substrates HB CC 5F157
  • H01L21/304,644@B
    		•  .moving scrub means HB CC 5F157
  • H01L21/304,644@C
    		•  .revolving scrub means HB CC 5F157
  • H01L21/304,644@D
    		•  moving substrates HB CC 5F157
  • H01L21/304,644@E
    		•  .revolving scrub means HB CC 5F157
  • H01L21/304,644@F
    		•  .moving scrub means HB CC 5F157
  • H01L21/304,644@G
    		•  characterized scrub means themselves HB CC 5F157
  • H01L21/304,644@Z
    		•  Others [e.g. washing of other than substrates, brush washing][carrier washing 648E] HB CC 5F157
  • H01L21/304,645
    		•  ........Gaseous phase washing HB CC 5F157
  • H01L21/304,645@A
    		•  using inert gasses [e.g. N2, Ar, He] HB CC 5F157
  • H01L21/304,645@B
    		•  using vapours HB CC 5F157
  • H01L21/304,645@C
    		•  using plasma HB CC 5F157
  • H01L21/304,645@D
    		•  using ultraviolet radiation, etc. HB CC 5F157
  • H01L21/304,645@Z
    		•  Others [e.g. Washing other than substrates][carrier washing 648E] HB CC 5F157
  • H01L21/304,646
    		•  ........using static electricity or static electricity removal HB CC 5F157
  • H01L21/304,647
    		•  ........characterized by washing fluid HB CC 5F157
  • H01L21/304,647@A
    		•  organic systems HB CC 5F157
  • H01L21/304,647@B
    		•  adding surface active agent HB CC 5F157
  • H01L21/304,647@Z
    		•  Others HB CC 5F157
  • H01L21/304,648
    		•  ........Device details or related items HB CC 5F157
  • H01L21/304,648@A
    		•  Conveyance means [see substrate conveyance 21/68 in general] HB CC 5F157
  • H01L21/304,648@B
    		•  .for conveying plural layers simultaneously [e.g. carrier loess] HB CC 5F157
  • H01L21/304,648@C
    		•  ..using carriers [characterised by the carrier pe se] HB CC 5F157
  • H01L21/304,648@D
    		•  Substrate containers [carriers] HB CC 5F157
  • H01L21/304,648@E
    		•  Substrate container washing HB CC 5F157
  • H01L21/304,648@F
    		•  Circulation filtration of wash fluids, filters HB CC 5F157
  • H01L21/304,648@G
    		•  Washing control, adjustment, and detection HB CC 5F157
  • H01L21/304,648@H
    		•  .Controls covering plural operations, general controls during process HB CC 5F157
  • H01L21/304,648@J
    		•  Arrangement [Layout] HB CC 5F157
  • H01L21/304,648@K
    		•  .Items common to liquid systems [e.g. piping, bulbs, pumps] HB CC 5F157
  • H01L21/304,648@L
    		•  .Items common to gaseous systems [e.g. exhaust and exchange] HB CC 5F157
  • H01L21/304,648@Z
    		•  Others HB CC 5F157
  • H01L21/304,651
    		•  .......Serial processes of washing and drying HB CC 5F157
  • H01L21/304,651@A
    		•  for revolving substrates HB CC 5F157
  • H01L21/304,651@B
    		•  .Sheet-type HB CC 5F157
  • H01L21/304,651@C
    		•  .Patch-type HB CC 5F157
  • H01L21/304,651@D
    		•  ..Shaft rotation horizontal or tilted away from horizontal HB CC 5F157
  • H01L21/304,651@E
    		•  ..Shaft rotation vertical or tilted away from vertical HB CC 5F157
  • H01L21/304,651@F
    		•  ...Individual central shafts of plural carriers aligned in parallel shaft rotation HB CC 5F157
  • H01L21/304,651@G
    		•  accompanying substrate movement [excluding rotation] HB CC 5F157
  • H01L21/304,651@H
    		•  using vapours HB CC 5F157
  • H01L21/304,651@J
    		•  dipping substrates [e.g. dipping in warm pure water] HB CC 5F157
  • H01L21/304,651@K
    		•  reducing pressure HB CC 5F157
  • H01L21/304,651@L
    		•  spraying gasses and blasting air [sprays vapours H] HB CC 5F157
  • H01L21/304,651@M
    		•  direct heating of substrates by heaters, light, etc. HB CC 5F157
  • H01L21/304,651@Z
    		•  Others [e.g. drying of other than substrates] HB CC 5F157
  • H01L21/306
    		•  ......Chemical or electrical treatment, e.g. electrolytic etching (to form insulating layers H01L 21/31; after-treatment of insulating layers H01L 21/3105) [2] HB CC 5F043
  • H01L21/306@A
    		•  wet etching in general [methods] [dry etching H01L21/302] HB CC 5F043
  • H01L21/306@B
    		•  .for semiconductor bodies HB CC 5F043
  • H01L21/306@C
    		•  ..for wafer division HB CC 5F043
  • H01L21/306@D
    		•  .for insulating coats HB CC 5F043
  • H01L21/306@E
    		•  ..for nitrided coats HB CC 5F043
  • H01L21/306@F
    		•  .for electrodes and wiring HB CC 5F043
  • H01L21/306@G
    		•  ..for polycrystalline silicon HB CC 5F043
  • H01L21/306@J
    		•  Devices HB CC 5F043
  • H01L21/306@K
    		•  .Wafer division storage retention HB CC 5F043
  • H01L21/306@U
    		•  End point detection HB CC 5F043
  • H01L21/306@L
    		•  Electrolytic etching HB CC 5F043
  • H01L21/306@M
    		•  Chemical polishing [wafer surface smoothing] [figure] HB CC 5F043
  • H01L21/306@N
    		•  Lift off method HB CC 5F043
  • H01L21/306@P
    		•  Under-etching (refined processing) [figure] HB CC 5F043
  • H01L21/306@Q
    		•  Tapered etching, flattened [differential prevention] [figure] HB CC 5F043
  • H01L21/306@R
    		•  Spray etching [devices also attached here] HB CC 5F043
  • H01L21/306@S
    		•  Dry + wet etching HB CC 5F043
  • H01L21/306@T
    		•  Etching after ion insertion HB CC 5F043
  • H01L21/306@Z
    		•  Others HB CC 5F043
  • H01L21/308
    		•  .......using masks [2] HB CC 5F043
  • H01L21/308@A
    		•  Etching liquid [comprised of liquid phase] HB CC 5F043
  • H01L21/308@B
    		•  .for Si and Ge HB CC 5F043
  • H01L21/308@C
    		•  .for items other than Si and Ge HB CC 5F043
  • H01L21/308@D
    		•  .for multicrystaline and amorphous use HB CC 5F043
  • H01L21/308@E
    		•  .for insulators HB CC 5F043
  • H01L21/308@F
    		•  .for metals HB CC 5F043
  • H01L21/308@G
    		•  .Cleaning fluids and surface processing fluids HB CC 5F043
  • H01L21/308@Z
    		•  Others HB CC 5F043
  • H01L21/31
    		•  ......to form insulating layers thereon, e.g. for masking (layers forming electrodes H01L 21/28; encapsulating layers H01L 21/56) [2] HB CC 5F045
  • H01L21/31@A
    		•  Devices HB CC 5F045
  • H01L21/31@B
    		•  .Gaseous phase accumulation devices HB CC 5F045
  • H01L21/31@C
    		•  ..using plasma HB CC 5F045
  • H01L21/31@D
    		•  ..Sputter devices HB CC 5F045
  • H01L21/31@E
    		•  .Heat processing furnaces HB CC 5F045
  • H01L21/31@F
    		•  .Fittings; HB CC 5F045
  • H01L21/31@Z
    		•  Others HB CC 5F045
  • H01L21/312
    		•  .......Organic layers, e.g. photoresist [2] HB CC 5F058
  • H01L21/312@A
    		•  characterized by material HB CC 5F058
  • H01L21/312@B
    		•  .Polyamide resins HB CC 5F058
  • H01L21/312@C
    		•  .Silicon resins HB CC 5F058
  • H01L21/312@D
    		•  .Photosensitive resins HB CC 5F058
  • H01L21/312@M
    		•  including laminated materials HB CC 5F058
  • H01L21/312@N
    		•  .having inorganic layers HB CC 5F058
  • H01L21/312@Z
    		•  Others HB CC 5F058
  • H01L21/314
    		•  .......Inorganic layers [2] HB CC 5F058
  • H01L21/314@A
    		•  characterized by material HB CC 5F058
  • H01L21/314@M
    		•  including laminated materials HB CC 5F058
  • H01L21/314@Z
    		•  Others HB CC 5F058
  • H01L21/316
    		•  ........composed of oxides or glassy oxides or oxide-based glass [2] HB CC 5F058
  • H01L21/316@A
    		•  Direct conversion HB CC 5F058
  • H01L21/316@S
    		•  .using thermal oxidation HB CC 5F058
  • H01L21/316@T
    		•  .using electrode oxidation HB CC 5F058
  • H01L21/316@U
    		•  .using solution processing HB CC 5F058
  • H01L21/316@B
    		•  Depositional films HB CC 5F058
  • H01L21/316@X
    		•  .using gaseous deposits HB CC 5F058
  • H01L21/316@Y
    		•  ..using sputtering HB CC 5F058
  • H01L21/316@C
    		•  Post-adherence oxidation HB CC 5F058
  • H01L21/316@G
    		•  Glassivation HB CC 5F058
  • H01L21/316@H
    		•  .Glass composition HB CC 5F058
  • H01L21/316@M
    		•  having lamination HB CC 5F058
  • H01L21/316@P
    		•  Processing after film formation [including annealing] HB CC 5F058
  • H01L21/316@Z
    		•  Others HB CC 5F058
  • H01L21/318
    		•  ........composed of nitrides [2] HB CC 5F058
  • H01L21/318@A
    		•  Direct conversion film HB CC 5F058
  • H01L21/318@B
    		•  Laminated films HB CC 5F058
  • H01L21/318@C
    		•  Nitroxided films HB CC 5F058
  • H01L21/318@M
    		•  having lamination HB CC 5F058
  • H01L21/318@Z
    		•  Others HB CC 5F058
  • H01L21/32
    		•  .......using masks (H01L 21/308 takes precedence) [2] HB CC 5F058
  • H01L21/322
    		•  .....to modify their internal properties, e.g. to produce internal imperfections [2] HB CC 5F054
  • H01L21/322@G
    		•  Getter rings HB CC 5F054
  • H01L21/322@C
    		•  .Semiconductor compounds from groups 3 to 5 HB CC 5F054
  • H01L21/322@E
    		•  .using high energy beams HB CC 5F054
  • H01L21/322@J
    		•  ..using ion beams HB CC 5F054
  • H01L21/322@M
    		•  .by mechanical and chemical distortion HB CC 5F054
  • H01L21/322@N
    		•  .Nitrification HB CC 5F054
  • H01L21/322@P
    		•  .using polycrystalline films HB CC 5F054
  • H01L21/322@Q
    		•  .using oxidized films HB CC 5F054
  • H01L21/322@R
    		•  .using phosphate and boron HB CC 5F054
  • H01L21/322@S
    		•  .using metals [Ni, Pb, Su] HB CC 5F054
  • H01L21/322@X
    		•  .using halogens HB CC 5F054
  • H01L21/322@Y
    		•  .Intrinsic getter rings HB CC 5F054
  • H01L21/322@K
    		•  Lifetime killer doping HB CC 5F054
  • H01L21/322@L
    		•  Lifetime control using high energy beams HB CC 5F054
  • H01L21/322@Z
    		•  Others HB CC 5F054
  • H01L21/324
    		•  .....Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering (H01L 21/20-H01L 21/288, H01L 21/302-H01L 21/322 take precedence) [2] HB CC 5F054
  • H01L21/324@C
    		•  3-5 group compound semiconductors (They take precedence over C-R. Annealing during crystal growth is predominantly classified in H01L 21/20. Annealing during ion implantation is in H01L 21/265 and 601A.) HB CC 5F054
  • H01L21/324@X
    		•  Semiconductor modification, e.g. defect removal (Annealing during crystal growth is predominantly classified in H01L 21/20. Annealing during ion implantation is in H01L 21/265 and 602.) HB CC 5F054
  • H01L21/324@N
    		•  P-N junction formation by heat processing HB CC 5F054
  • H01L21/324@G
    		•  Devices for annealing HB CC 5F054
  • H01L21/324@J
    		•  .Heating means (Lamps are predominantly classified in H01L 21/26. Electron ray is in H01L 21/263. Lasers are in H01L 21/268.) HB CC 5F054
  • H01L21/324@K
    		•  ..Heaters HB CC 5F054
  • H01L21/324@Q
    		•  .Wafer supports [ports, suscepters, stages] HB CC 5F054
  • H01L21/324@R
    		•  .Gas introduction and exhaust paths, ways of gas flow HB CC 5F054
  • H01L21/324@S
    		•  .Wafer conveyance means [including spare rooms] HB CC 5F054
  • H01L21/324@W
    		•  Preliminary treatment and subsequent treatment [base preheating and precooling] HB CC 5F054
  • H01L21/324@T
    		•  Measuring and control HB CC 5F054
  • H01L21/324@P
    		•  Plasma annealing HB CC 5F054
  • H01L21/324@Z
    		•  Others HB CC 5F054
  • H01L21/326
    		•  .....Application of electric currents or fields, e.g. for electroforming (H01L 21/20-H01L 21/288, H01L 21/302-H01L 21/324 take precedence) [2] HB CC 5F054
  • H01L21/34
    		•  ...the devices having semiconductor bodies not provided for in groups H01L 21/06, H01L 21/16, and H01L 21/18 with or without impurities, e.g. doping materials [2] HB CC 5F152
  • H01L21/36
    		•  ....Deposition of semiconductor materials on a substrate, e.g. epitaxial growth [2] HB CC 5F152
  • H01L21/363
    		•  .....using physical deposition, e.g. vacuum deposition, sputtering [2] HB CC 5F103
  • H01L21/365
    		•  .....using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition [2] HB CC 5F045
  • H01L21/368
    		•  .....using liquid deposition [2] HB CC 5F053
  • H01L21/368@L
    		•  having organic layers HB CC 5F053
  • H01L21/368@Z
    		•  Others HB CC 5F053
  • H01L21/38
    		•  ....Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions [2] HB CC 5F042
  • H01L21/383
    		•  .....using diffusion into, or out of, a solid from or into a gaseous phase [2] HB CC 5F042
  • H01L21/385
    		•  .....using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer [2] HB CC 5F042
  • H01L21/388
    		•  .....using diffusion into, or out of, a solid from or into a liquid phase, e.g. alloy diffusion processes [2] HB CC 5F042
  • H01L21/40
    		•  ....Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body [2] HB CC 5F042
  • H01L21/42
    		•  ....Bombardment with radiation [2] HB CC 5F054
  • H01L21/423
    		•  .....with high-energy radiation [2] HB CC 5F054
  • H01L21/425
    		•  ......producing ion implantation [2] HB CC 5F054
  • H01L21/428
    		•  ......using electromagnetic radiation, e.g. laser radiation [2] HB CC 5F054
  • H01L21/44
    		•  ....Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L 21/36-H01L 21/428 [2] HB CC 4M104
  • H01L21/441
    		•  .....Deposition of conductive or insulating materials for electrodes [2] HB CC 4M104
  • H01L21/443
    		•  ......from a gas or vapour, e.g. condensation [2] HB CC 4M104
  • H01L21/445
    		•  ......from a liquid, e.g. electrolytic deposition [2] HB CC 4M104
  • H01L21/447
    		•  .....involving the application of pressure, e.g. thermo-compression bonding (H01L 21/607 takes precedence) [2] HB CC 5F044
  • H01L21/449
    		•  .....involving the application of mechanical vibrations, e.g. ultrasonic vibrations [2] HB CC 5F044
  • H01L21/46
    		•  ....Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L 21/36-H01L 21/428 (manufacture of electrodes thereon H01L 21/44, H10D 64/01) HB CC 5F146
  • H01L21/461
    		•  .....to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting [2] HB CC 5F004
  • H01L21/463
    		•  ......Mechanical treatment, e.g. grinding, ultrasonic treatment [2] HB CC 5F057
  • H01L21/465
    		•  ......Chemical or electrical treatment, e.g. electrolytic etching (to form insulating layers H01L 21/469) [2] HB CC 5F043
  • H01L21/467
    		•  .......using masks [2] HB CC 5F043
  • H01L21/469
    		•  ......to form insulating layers thereon, e.g. for masking (layers forming electrodes H01L 21/44; encapsulating layers H01L 21/56) [2] HB CC 5F045
  • H01L21/47
    		•  .......Organic layers, e.g. photoresist [2] HB CC 5F058
  • H01L21/471
    		•  .......Inorganic layers [2] HB CC 5F058
  • H01L21/473
    		•  ........composed of oxides or glassy oxides or oxide-based glass [2] HB CC 5F058
  • H01L21/475
    		•  .......using masks (H01L 21/467 takes precedence) [2] HB CC 5F058
  • H01L21/477
    		•  .....Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering (H01L 21/36-H01L 21/449, H01L 21/461-H01L 21/475 take precedence) [2] HB CC 5F054
  • H01L21/479
    		•  .....Application of electric currents or fields, e.g. for electroforming (H01L 21/36-H01L 21/449, H01L 21/461-H01L 21/477 take precedence) [2] HB CC 5F054
  • H01L21/48
    		•  ...Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L 21/18-H01L 21/326 or H10D 48/04-H10D 48/07 HB CC 5F059
  • H01L21/50
    		•  ...Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L 21/18-H01L 21/326 or H10D 48/04-H10D 48/07 HB CC 5F059
  • H01L21/50@A
    		•  Assembly HB CC 5F059
  • H01L21/50@B
    		•  .Assembly including at least die bonding and wire bonding HB CC 5F059
  • H01L21/50@C
    		•  Part transfer and supply HB CC 5F059
  • H01L21/50@D
    		•  .Lead frame transfer and supply HB CC 5F059
  • H01L21/50@E
    		•  Lead frame receiving HB CC 5F059
  • H01L21/50@F
    		•  Part positioning HB CC 5F059
  • H01L21/50@G
    		•  Sealing HB CC 5F059
  • H01L21/50@H
    		•  Plating HB CC 5F059
  • H01L21/50@J
    		•  Heating HB CC 5F059
  • H01L21/50@Z
    		•  Others HB CC 5F059
  • H01L21/52
    		•  ....Mounting semiconductor bodies in containers [2] HB CC 5F047
  • H01L21/52@A
    		•  Construction HB CC 5F047
  • H01L21/52@B
    		•  .Limiting materials HB CC 5F047
  • H01L21/52@C
    		•  Methods HB CC 5F047
  • H01L21/52@D
    		•  .Limiting materials HB CC 5F047
  • H01L21/52@E
    		•  Adhesives HB CC 5F047
  • H01L21/52@F
    		•  Devices for bonding HB CC 5F047
  • H01L21/52@G
    		•  .Supply and application of adhesives HB CC 5F047
  • H01L21/52@H
    		•  .Local heating means HB CC 5F047
  • H01L21/52@J
    		•  Pressure welding-type HB CC 5F047
  • H01L21/52@K
    		•  .Fastening with bolts HB CC 5F047
  • H01L21/52@L
    		•  .Including studs HB CC 5F047
  • H01L21/52@M
    		•  Support electrodes (Cu-C] HB CC 5F047
  • H01L21/52@Z
    		•  Others HB CC 5F047
  • H01L21/54
    		•  ....Providing fillings in containers, e.g. gas fillings [2] HB CC 5F065
  • H01L21/56
    		•  ....Encapsulations, e.g. encapsulating layers, coatings [2] HB CC 5F061
  • H01L21/56@R
    		•  Resin sealing HB CC 5F061
  • H01L21/56@T
    		•  .by transfer moulding and injection moulding HB CC 5F061
  • H01L21/56@B
    		•  ..Lead frame carrying out and in HB CC 5F061
  • H01L21/56@C
    		•  .Resin pallets and tablets HB CC 5F061
  • H01L21/56@D
    		•  .Burring HB CC 5F061
  • H01L21/56@E
    		•  .Resin application [including potting, dipping, resin powder application] HB CC 5F061
  • H01L21/56@G
    		•  Glass sealing HB CC 5F061
  • H01L21/56@F
    		•  Sealing other than resin or glass HB CC 5F061
  • H01L21/56@H
    		•  characterized by leads HB CC 5F061
  • H01L21/56@J
    		•  for optical semiconductors HB CC 5F061
  • H01L21/56@Z
    		•  Others HB CC 5F061
  • H01L21/58
    		•  ....Mounting semiconductor devices on supports [2] HB CC 5F047
  • H01L21/60
    		•  ....Attaching leads or other conductive members, to be used for carrying current to or from the device in operation [2] HB CC 5F044
  • H01L21/60,301
    		•  .....Wire bonding HB CC 5F044
  • H01L21/60,301@A
    		•  Internal parts connected by wires HB CC 5F044
  • H01L21/60,301@B
    		•  .Connection with electrodes to lead frames [see the relevant place of 23/50A for lead frame manufacturing][see the relevant place of 23/50A for beam lead cutting] HB CC 5F044
  • H01L21/60,301@C
    		•  Wire short prevention HB CC 5F044
  • H01L21/60,301@D
    		•  Wire bonding methods HB CC 5F044
  • H01L21/60,301@F
    		•  Metal wires for wire bonding HB CC 5F044
  • H01L21/60,301@G
    		•  Wire bonder upper construction HB CC 5F044
  • H01L21/60,301@H
    		•  .Wire ball formation HB CC 5F044
  • H01L21/60,301@J
    		•  .Wire tension adjustment and clamp wire supply HB CC 5F044
  • H01L21/60,301@K
    		•  Wire bonder lower construction HB CC 5F044
  • H01L21/60,301@L
    		•  Bonding position detection and control HB CC 5F044
  • H01L21/60,301@M
    		•  Lead frames HB CC 5F044
  • H01L21/60,301@N
    		•  Bonding pads and electrodes [form and placement][see the relevant place of 21/92 for bumps] HB CC 5F044
  • H01L21/60,301@P
    		•  Bonding pad electrodes [form and placement excluded][bumps 21/92] HB CC 5F044
  • H01L21/60,301@Z
    		•  Others HB CC 5F044
  • H01L21/60,311
    		•  .....Face bonding HB CC 5F044
  • H01L21/60,311@Q
    		•  Connection by face bonding HB CC 5F044
  • H01L21/60,311@R
    		•  .Connection to tape carrier leads HB CC 5F044
  • H01L21/60,311@S
    		•  .Insulator substrate wiring and connection to bumps HB CC 5F044
  • H01L21/60,311@T
    		•  Face bonders HB CC 5F044
  • H01L21/60,311@W
    		•  Tape carriers HB CC 5F044
  • H01L21/60,311@Z
    		•  Others HB CC 5F044
  • H01L21/60,321
    		•  .....Bonding other than the above and bonding related items HB CC 5F044
  • H01L21/60,321@E
    		•  Internal part connections other than with wire connectors HB CC 5F044
  • H01L21/60,321@V
    		•  Beam leads HB CC 5F044
  • H01L21/60,321@X
    		•  Devices for high frequencies HB CC 5F044
  • H01L21/60,321@Y
    		•  Bonding inspection HB CC 5F044
  • H01L21/60,321@Z
    		•  Others HB CC 5F044
  • H01L21/603
    		•  .....involving the application of pressure, e.g. thermo-compression bonding (H01L 21/607 takes precedence) [2] HB CC 5F044
  • H01L21/603@A
    		•  Semiconductor devices using pressure connection HB CC 5F044
  • H01L21/603@B
    		•  Methods for pressure connection HB CC 5F044
  • H01L21/603@C
    		•  Devices for pressure connection HB CC 5F044
  • H01L21/603@Z
    		•  Others HB CC 5F044
  • H01L21/607
    		•  .....involving the application of mechanical vibrations, e.g. ultrasonic vibrations [2] HB CC 5F044
  • H01L21/607@A
    		•  Semiconductor devices using ultrasonic wave bonding HB CC 5F044
  • H01L21/607@B
    		•  Methods for ultrasonic wave bonding HB CC 5F044
  • H01L21/607@C
    		•  Devices for ultrasonic wave bonding HB CC 5F044
  • H01L21/607@Z
    		•  Others HB CC 5F044
  • H01L21/62
    		•  ..the devices having no potential barriers?[2006.01] HB CC 5F093
  • H01L21/64
    		•  .Manufacture or treatment of solid-state devices other than semiconductor devices, or of parts thereof, not specially adapted for a single type of device provided for in subclasses H10F, H10H, H10K or H10N HB CC 4M106
  • H01L21/66
    		•  .Testing or measuring during manufacture or treatment [2] HB CC 4M106
  • H01L21/66@A
    		•  Identification of defective elements [marking, mapping, etc.] HB CC 4M106
  • H01L21/66@B
    		•  Probers HB CC 4M106
  • H01L21/66@C
    		•  .Non-contact type [electron beams, lasers, etc.] HB CC 4M106
  • H01L21/66@D
    		•  Equipment for testing and measuring HB CC 4M106
  • H01L21/66@E
    		•  Electrodes and terminals for testing and measuring [installed in semiconductor devices] HB CC 4M106
  • H01L21/66@F
    		•  Circuits for testing and measuring [formed for semiconductor devices] HB CC 4M106
  • H01L21/66@G
    		•  Autobandlers HB CC 4M106
  • H01L21/66@H
    		•  Testing and measuring under every condition HB CC 4M106
  • H01L21/66@J
    		•  Appearance and patterns (P and R take precedence) HB CC 4M106
  • H01L21/66@K
    		•  .Pinholes, cracks, cambers, etc. [non-adhesive means such as light J] HB CC 4M106
  • H01L21/66@L
    		•  Physical properties of substrates and elements HB CC 4M106
  • H01L21/66@M
    		•  .Carrier lifespan HB CC 4M106
  • H01L21/66@N
    		•  .Internal conditions [composition, grids, etch pits, cross section observations, etc. P takes precedence] HB CC 4M106
  • H01L21/66@P
    		•  Thickness, position, cutting plane angle, etc. HB CC 4M106
  • H01L21/66@Q
    		•  Oxide film, separation, joining, etc. [P takes precedence] HB CC 4M106
  • H01L21/66@R
    		•  Bonding conditions, sealing conditions HB CC 4M106
  • H01L21/66@S
    		•  Rupture and short-circuiting of wired section HB CC 4M106
  • H01L21/66@T
    		•  Temperature and colouring conditions [of semiconductor position] HB CC 4M106
  • H01L21/66@U
    		•  Bipolar transistors HB CC 4M106
  • H01L21/66@V
    		•  FET and metal oxide semiconductor structure HB CC 4M106
  • H01L21/66@W
    		•  Memory HB CC 4M106
  • H01L21/66@X
    		•  Light emitting diode and light receiving particles HB CC 4M106
  • H01L21/66@Y
    		•  Particles for checking HB CC 4M106
  • H01L21/66@Z
    		•  Others HB CC 4M106
  • H01L21/68
    		•  .Apparatus for supporting or positioning components during manufacture, e.g. jigs [2] HB CC 5F131
  • H01L21/68@A
    		•  Transport [wafer transport equipment, arms, manipulators, bands, robots, dollies, conveyor arrangement designs] [simple items use physical distribution] HB CC 5F131
  • H01L21/68@B
    		•  .Adsorption arms for conveyance HB CC 5F131
  • H01L21/68@C
    		•  ..Bernoulli's chuck [adsorption by negative pressure due to spraying] HB CC 5F131
  • H01L21/68@D
    		•  Wafer batch transfer [transfer between carrier and board arrangement pitch change] HB CC 5F131
  • H01L21/68@E
    		•  Pellet and chip removal [uplifting after cutting, separation during uplifting of individual chips] HB CC 5F131
  • H01L21/68@F
    		•  Position detection and control [M takes precedence][mark detection] HB CC 5F131
  • H01L21/68@G
    		•  Positioning and alignment [M takes precedence] HB CC 5F131
  • H01L21/68@J
    		•  .Lead frame positioning HB CC 5F131
  • H01L21/68@K
    		•  Mounting stand shifting [micromotion tables and positioning stages] HB CC 5F131
  • H01L21/68@L
    		•  Detection of wafer presence and facing up or down [wafer number count] HB CC 5F131
  • H01L21/68@M
    		•  using orifices [orifice detection and orifice coupling HB CC 5F131
  • H01L21/68@N
    		•  Retention [jig for fastening during processing wafer, water surface protective tape attachment and removal] HB CC 5F131
  • H01L21/68@P
    		•  .using adsorption [retention of adsorption plates] HB CC 5F131
  • H01L21/68@R
    		•  ..Static electricity chucks [retention on static electricity plates] HB CC 5F131
  • H01L21/68@S
    		•  Grips [forceps and arms for pitching] HB CC 5F131
  • H01L21/68@T
    		•  Vessels [stockers, cabinets, warehouses, partitioned items only, completed items distributed] HB CC 5F131
  • H01L21/68@U
    		•  .for use with level pallets, wafers, etc.[trays] HB CC 5F131
  • H01L21/68@V
    		•  .stacked [wafer carriers] HB CC 5F131
  • H01L21/68@Z
    		•  Others HB CC 5F131
  • H01L21/70
    		•  .Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof (manufacture of assemblies consisting of preformed electrical components H05K 3/00, H05K 13/00) [2] HB CC 5F032
  • H01L21/72
    		•  ..the substrate being a semiconductor body [2] HB CC 5F032
  • H01L21/74
    		•  ...Making of buried regions of high impurity concentration, e.g. buried collector layers, internal connections [2] HB CC 5F032
  • H01L21/76
    		•  ...Making of isolation regions between components [2] HB CC 5F032
  • H01L21/76@A
    		•  Separation by air [air-gap] HB CC 5F032
  • H01L21/76@J
    		•  Separation by PN junction only [MOSIC separation M] HB CC 5F032
  • H01L21/76@D
    		•  Separation by dielectric substances only [P takes priority] HB CC 5F032
  • H01L21/76@M
    		•  Combined separation by PN junction and dielectrics, e.g., including LOCOS technique (P takes precedence) HB CC 5F032
  • H01L21/76@N
    		•  .for forming slots HB CC 5F032
  • H01L21/76@L
    		•  ..which form vertical slots HB CC 5F032
  • H01L21/76@V
    		•  ..which form V slots HB CC 5F032
  • H01L21/76@E
    		•  .characterized by epitaxy HB CC 5F032
  • H01L21/76@S
    		•  characterized by parasitic-effect prevention, e.g. channel stopper formation HB CC 5F032
  • H01L21/76@P
    		•  using silicon porification techniques HB CC 5F032
  • H01L21/76@Q
    		•  characterized by polycrystalline silicon HB CC 5F032
  • H01L21/76@R
    		•  characterized by ion injection HB CC 5F032
  • H01L21/76@Z
    		•  Others HB CC 5F032
  • H01L21/78
    		•  ...with subsequent division of the substrate into a plurality of individual components [2] HB CC 5F063
  • H01L21/78@A
    		•  Divisions HB CC 5F063
  • H01L21/78@B
    		•  Laser scribing HB CC 5F063
  • H01L21/78@C
    		•  Dicing line detection HB CC 5F063
  • H01L21/78@F
    		•  Revolving blades HB CC 5F063
  • H01L21/78@G
    		•  Diamond cutters HB CC 5F063
  • H01L21/78@H
    		•  Sand blasting HB CC 5F063
  • H01L21/78@L
    		•  Wafer preliminary treatment, scribeline shapes and construction HB CC 5F063
  • H01L21/78@M
    		•  Wafer mounting, reinforcement, and dicing jig HB CC 5F063
  • H01L21/78@N
    		•  Wafer retention and conveyance HB CC 5F063
  • H01L21/78@P
    		•  Post-treatment of wafers, removal of adhesive tape and such HB CC 5F063
  • H01L21/78@Q
    		•  Dicing methods and serial processes accompanying division HB CC 5F063
  • H01L21/78@R
    		•  Wafer or chip shape and structure after dicing or after dicing and before cracking HB CC 5F063
  • H01L21/78@S
    		•  using at least etching HB CC 5F063
  • H01L21/78@T
    		•  Cracking HB CC 5F063
  • H01L21/78@U
    		•  .Cleavage HB CC 5F063
  • H01L21/78@V
    		•  Undergoing cracking after dicing HB CC 5F063
  • H01L21/78@W
    		•  Spacing HB CC 5F063
  • H01L21/78@X
    		•  at least undergoing both cracking and spacing HB CC 5F063
  • H01L21/78@Y
    		•  Picking and pellet removal HB CC 5F063
  • H01L21/78@Z
    		•  Others HB CC 5F063
  • H01L21/80
    		•  ....each individual component consisting of a plurality of components formed in or on a common substrate [2] HB CC 5F063
  • H01L21/84
    		•  ..the substrate being other than a semiconductor body, e.g. being an insulating body [2] HB CC 5F152
  • H01L21/86
    		•  ...the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS [2] HB CC 5F045
  • H01L21/88
    		•  ..Applying leads or other conductive members to be used for carrying current [2] HB CC 5F033
  • H01L21/88@A
    		•  related to wiring patterns [general structure of wiring] HB CC 5F033
  • H01L21/88@B
    		•  .related to wiring patterns formation HB CC 5F033
  • H01L21/88@C
    		•  ..utilizing etching of wiring material HB CC 5F033
  • H01L21/88@D
    		•  ...using dry etching HB CC 5F033
  • H01L21/88@E
    		•  ..using selective oxidation HB CC 5F033
  • H01L21/88@F
    		•  ..related to tapered shapes HB CC 5F033
  • H01L21/88@G
    		•  ..using lift off HB CC 5F033
  • H01L21/88@H
    		•  ...flattened by lift off HB CC 5F033
  • H01L21/88@J
    		•  .providing for wiring layers in semiconductor substrates HB CC 5F033
  • H01L21/88@K
    		•  .related to the flattening of wiring layer surfaces HB CC 5F033
  • H01L21/88@M
    		•  characterized by HB CC 5F033
  • H01L21/88@N
    		•  .using AI or AI alloys HB CC 5F033
  • H01L21/88@P
    		•  .using semiconductors HB CC 5F033
  • H01L21/88@Q
    		•  .using combined metals and semiconductors [silicides and polycides] HB CC 5F033
  • H01L21/88@R
    		•  .using metal laminating materials HB CC 5F033
  • H01L21/88@S
    		•  regarding the electric conduction layer which has the purposes other than wiring [shield dummy] HB CC 5F033
  • H01L21/88@T
    		•  related to wiring ends [bonding pads] HB CC 5F033
  • H01L21/88@Z
    		•  Others [wiring arrangement] HB CC 5F033
  • H01L21/90
    		•  ...within the device from one component in operation to the other [2] HB CC 5F033
  • H01L21/90@A
    		•  related to connections between wiring layers HB CC 5F033
  • H01L21/90@B
    		•  .characterized by structure HB CC 5F033
  • H01L21/90@C
    		•  related to connection with wiring layers and semiconductor substrates HB CC 5F033
  • H01L21/90@D
    		•  .characterized by structure HB CC 5F033
  • H01L21/90@J
    		•  related to space between wiring layers HB CC 5F033
  • H01L21/90@K
    		•  .using inorganic materials HB CC 5F033
  • H01L21/90@L
    		•  ..using metallic compounds HB CC 5F033
  • H01L21/90@M
    		•  ..using layering materials HB CC 5F033
  • H01L21/90@N
    		•  .being insulated by air [air bridge and porous film] HB CC 5F033
  • H01L21/90@S
    		•  .using organic resins HB CC 5F033
  • H01L21/90@P
    		•  .characterized by manufacturing methods HB CC 5F033
  • H01L21/90@Q
    		•  ..using application HB CC 5F033
  • H01L21/90@R
    		•  ..undertaking melting processes [reflow] HB CC 5F033
  • H01L21/90@V
    		•  related to removal of parasitic-effects [parasite channels] HB CC 5F033
  • H01L21/90@W
    		•  regarding intersection of wiring HB CC 5F033
  • H01L21/90@Z
    		•  Others HB CC 5F033
  • H01L21/92
    		•  ...to or from the device in operation [2] HB CC 5F107
  • H01L21/92,601
    		•  ....Bump electrodes HB CC 5F107
  • H01L21/92,602
    		•  .....characterized by HB CC 5F107
  • H01L21/92,602@A
    		•  Bumps HB CC 5F107
  • H01L21/92,602@B
    		•  .Combinations of similar materials, e.g. solder containing different materials HB CC 5F107
  • H01L21/92,602@C
    		•  .Combinations of dissimilar materials HB CC 5F107
  • H01L21/92,602@D
    		•  ..layered construction HB CC 5F107
  • H01L21/92,602@E
    		•  ..composed of base and covered parts HB CC 5F107
  • H01L21/92,602@F
    		•  ...having bases shaped like cylinders or mushrooms HB CC 5F107
  • H01L21/92,602@G
    		•  .characterized by shape only HB CC 5F107
  • H01L21/92,602@H
    		•  Backing metals HB CC 5F107
  • H01L21/92,602@J
    		•  Electrode pads HB CC 5F107
  • H01L21/92,602@K
    		•  Insulating films HB CC 5F107
  • H01L21/92,602@L
    		•  .Laminated resin layers HB CC 5F107
  • H01L21/92,602@M
    		•  Substrates HB CC 5F107
  • H01L21/92,602@N
    		•  characterized by pattern configuration of plural bump electrodes HB CC 5F107
  • H01L21/92,602@P
    		•  .Selectively configured bumps with special patterns HB CC 5F107
  • H01L21/92,602@Q
    		•  .Shapes changed in response to positions HB CC 5F107
  • H01L21/92,602@R
    		•  characterised by combinations of shapes, materials, etc. with electrode to be connected HB CC 5F107
  • H01L21/92,602@Z
    		•  Others HB CC 5F107
  • H01L21/92,603
    		•  .....characterized by material and component selection HB CC 5F107
  • H01L21/92,603@A
    		•  Bumps HB CC 5F107
  • H01L21/92,603@B
    		•  .Composed of alloys HB CC 5F107
  • H01L21/92,603@C
    		•  .Composed of conductive resins HB CC 5F107
  • H01L21/92,603@D
    		•  Backing metals HB CC 5F107
  • H01L21/92,603@E
    		•  .having alloy layers HB CC 5F107
  • H01L21/92,603@F
    		•  Electrode pads HB CC 5F107
  • H01L21/92,603@G
    		•  Insulating films HB CC 5F107
  • H01L21/92,603@Z
    		•  Others HB CC 5F107
  • H01L21/92,604
    		•  .....characterized by construction methods HB CC 5F107
  • H01L21/92,604@A
    		•  Bumps HB CC 5F107
  • H01L21/92,604@B
    		•  .Electroplating HB CC 5F107
  • H01L21/92,604@C
    		•  .Vapour deposition HB CC 5F107
  • H01L21/92,604@D
    		•  .Dipping HB CC 5F107
  • H01L21/92,604@E
    		•  .Printing HB CC 5F107
  • H01L21/92,604@F
    		•  .Transcription HB CC 5F107
  • H01L21/92,604@G
    		•  .Bonding HB CC 5F107
  • H01L21/92,604@H
    		•  ..Ball bonding HB CC 5F107
  • H01L21/92,604@J
    		•  ..Wire ball bonding (stand bumps) HB CC 5F107
  • H01L21/92,604@K
    		•  ...Capillary shape and operation HB CC 5F107
  • H01L21/92,604@L
    		•  ...Equipment shape and operation HB CC 5F107
  • H01L21/92,604@M
    		•  Backing metals HB CC 5F107
  • H01L21/92,604@N
    		•  .Vapour deposition HB CC 5F107
  • H01L21/92,604@P
    		•  .Lift off HB CC 5F107
  • H01L21/92,604@Q
    		•  .Etching HB CC 5F107
  • H01L21/92,604@R
    		•  Electrode pads HB CC 5F107
  • H01L21/92,604@S
    		•  Insulating films, photoresist, etc. HB CC 5F107
  • H01L21/92,604@T
    		•  related to inspection and measuring HB CC 5F107
  • H01L21/92,604@Z
    		•  Others HB CC 5F107
  • H01L21/92,611
    		•  ....Beam lead electrodes HB CC 5F107
  • H01L21/92,611@A
    		•  characterized by construction HB CC 5F107
  • H01L21/92,611@B
    		•  characterized by material selection HB CC 5F107
  • H01L21/92,611@C
    		•  characterized by manufacturing methods HB CC 5F107
  • H01L21/92,611@Z
    		•  Others HB CC 5F107
  • H01L21/92,621
    		•  ....Other electrodes for mounting HB CC 5F107
  • H01L21/92,621@A
    		•  using solder HB CC 5F107
  • H01L21/92,621@Z
    		•  Others HB CC 5F107
  • H01L21/94
    		•  ..Forming insulating layers or insulating regions [2] HB CC 4M108
  • H01L21/94@A
    		•  LOCOS HB CC 4M108
  • H01L21/94@Z
    		•  Others HB CC 4M108
  • H01L21/95
    		•  ...within the device [2] HB CC 4M108
  • H01L21/96
    		•  ..Manufacture or treatment of parts, e.g. containers, for devices consisting of a plurality of solid state components formed in or on a common substrate, prior to assembly of the devices; Manufacture or treatment of parts, e.g. containers, for integrated circuit devices, prior to assembly of the devices (containers, encapsulations, fillings, mountings per se H01L 23/00) [2] HB CC 5F059
  • H01L21/98
    		•  ..Assembly of devices consisting of solid state components formed in or on a common substrate; Assembly of integrated circuit devices [2] HB CC 5F059
    TOP