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  • H01L31/00
    		•  Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (H10K 30/00 takes precedence; devices consisting of a plurality of solid state components formed in, or on, a common substrate, other than combinations of radiation-sensitive components with one or more electric light sources, H01L 27/00) [2, 6, 2006.01] HB CC 5F149
  • H01L31/00@A
    		•  semiconductor devices for detecting radiation and electron particle beams HB CC 5F149
  • H01L31/00@B
    		•  other photoelectric devices HB CC 5F149
  • H01L31/00@Z
    		•  Others HB CC 5F149
  • H01L31/02
    		•  .Details [2, 2006.01] HB CC 5F149
  • H01L31/02@A
    		•  Devices for photoelectric conversion and common items HB CC 5F149
  • H01L31/02@B
    		•  photoelectric conversion devices, vessels, seals, attachment HB CC 5F149
  • H01L31/02@C
    		•  connection with devices for photoelectric conversion and optical fibers HB CC 5F149
  • H01L31/02@D
    		•  connection with photoelectric conversion devices and optical elements HB CC 5F149
  • H01L31/02@E
    		•  refrigeration type photoelectric conversion devices HB CC 5F149
  • H01L31/02@Z
    		•  Others HB CC 5F149
  • H01L31/04
    		•  .adapted as conversion devices [2] HB CC 5F251
  • H01L31/04,200
    		•  ..characterized by details HB CC 5F251
  • H01L31/04,220
    		•  ...measure to preventg damage caused by particle beam radiation, e.g. for application in space HB CC 5F251
  • H01L31/04,240
    		•  ...characterized by coating, e.g. antireflection film HB CC 5F251
  • H01L31/04,260
    		•  ...characterized by electrode HB CC 5F251
  • H01L31/04,262
    		•  ....structure of collecting electrode HB CC 5F251
  • H01L31/04,264
    		•  ....conductive paste HB CC 5F251
  • H01L31/04,266
    		•  ....tansparent electrode HB CC 5F251
  • H01L31/04,280
    		•  ...characterized by texture structure HB CC 5F251
  • H01L31/04,282
    		•  ....aplied to thin film solar cell HB CC 5F251
  • H01L31/04,284
    		•  ...characterized by supporting substrate texture structure of supporting substrate H01L31/04, 280-31/04, 282) HB CC 5F251
  • H01L31/04,300
    		•  ..characterized by main body of semiconductor HB CC 5F251
  • H01L31/04,320
    		•  ...characterized by materials HB CC 5F251
  • H01L31/04,340
    		•  ...characterized by shape, relatize size or arrangement of semiconductor field HB CC 5F251
  • H01L31/04,342
    		•  ....include quantum structure HB CC 5F251
  • H01L31/04,342@A
    		•  quantum dot HB CC 5F251
  • H01L31/04,342@B
    		•  nanorod HB CC 5F251
  • H01L31/04,342@Z
    		•  Others HB CC 5F251
  • H01L31/04,344
    		•  ....spherical HB CC 5F251
  • H01L31/04,346
    		•  ...characterized by crystal structure of direction of crystal plane HB CC 5F251
  • H01L31/04,400
    		•  ..characterized by manufacturing method or device HB CC 5F251
  • H01L31/04,420
    		•  ...characterized by thin film coating technology HB CC 5F251
  • H01L31/04,422
    		•  ....by application HB CC 5F251
  • H01L31/04,424
    		•  ....characterized by consecutive processing, e.g. roll-to-roll HB CC 5F251
  • H01L31/04,440
    		•  ...characterized by doping method HB CC 5F251
  • H01L31/04,460
    		•  ...mechanical processing of substrate, e.g. slicing, sticking, detaching HB CC 5F251
  • H01L31/04,500
    		•  ..array of PV module or each individual PV element (supporting structure of PV module H02S20/00) HB CC 5F251
  • H01L31/04,510
    		•  ...mechanically piled up PV element HB CC 5F251
  • H01L31/04,520
    		•  ...include bypass diode (pypass diode in junction box H02S40/34) HB CC 5F251
  • H01L31/04,522
    		•  ....bypass diode integrated or directly connected with device, e.g. having bypass diode integrated or formed in or on same substrate as photovoltaic element HB CC 5F251
  • H01L31/04,530
    		•  ...thin film solar cell, e.g. include single thin film a-Si, CIS or CdTe solar cell HB CC 5F251
  • H01L31/04,532
    		•  ....PV module composed of multiple solar cells piled up on single substrate HB CC 5F251
  • H01L31/04,532@A
    		•  characterized by patterning method for connecting PV element inside module, e.g. cutting electrically conducting layer or active layer by laser HB CC 5F251
  • H01L31/04,532@B
    		•  having specific structure for electrical interconnection between adjacent PV elements in module HB CC 5F251
  • H01L31/04,532@C
    		•  specific means to partially transmit light through module, e.g. having partially transparent thin film solar cell for window HB CC 5F251
  • H01L31/04,532@Z
    		•  Others HB CC 5F251
  • H01L31/04,540
    		•  ...array of PV elements having multiple vertical joint or multiple V group joint formed in semi-conductor substrate HB CC 5F251
  • H01L31/04,550
    		•  ...on one semi-conductor substrate in one plane, e.g. array of PV elements formed periodically; micro-array of PV elements HB CC 5F251
  • H01L31/04,560
    		•  ...sealing of module HB CC 5F251
  • H01L31/04,562
    		•  ....protective back sheet HB CC 5F251
  • H01L31/04,570
    		•  ...electrical inerconnecting means between PV elements in PV module, e.g. series connection of PV elements (electrode H01L31/04, 260; electrical interconnection of thin film solar cells formed on single common substrate H01L31/04, 532; specific structure for electrical interconnection of thin film solar cells adjacent in module H01L31/04, 532@B; electrical interconnecting means especially adapted to electrical connection between two or more PV module H02S40/36) HB CC 5F251
  • H01L31/04,600
    		•  ..cooling means directly joined or integrated with PV elements, e.g. heat sink directly joined with Peltier element or PV element intgegrated for forced cooling (cooling means joined with PV module H02S40/42) HB CC 5F251
  • H01L31/04,602
    		•  ...including means to utilize heat eenergy directly joined with PV element, e.g. integrated Seebeck element HB CC 5F251
  • H01L31/04,610
    		•  ..energy stgorage means directly joined or integrated with PV element, e.g. condenser integrated with PV element (energy storage means joined with PV module H02S40/38) HB CC 5F251
  • H01L31/04,620
    		•  ..optical element directly joined or integrated with PV element, e.g. lightg reflex means or light concentrating means HB CC 5F251
  • H01L31/04,622
    		•  ...by optical element directly joined or integrated with PV element, e.g. absorbing and re-radiating light at different wavelength by using luminescent materials, fluorescent condenser or up-conversion device HB CC 5F251
  • H01L31/04,624
    		•  ...back surface reflector [BSR] as lightg reflex means HB CC 5F251
  • H01L31/06
    		•  ..characterised by potential barriers?[2012.01] HB CC 5F251
  • H01L31/06,100
    		•  ...potential barrier being point-contact-type (H01L31/06, 350 takes precedence) HB CC 5F251
  • H01L31/06,150
    		•  ...potential barrier composed only of metal-insulator-semiconductor-type HB CC 5F251
  • H01L31/06,200
    		•  ...potential barrier is composed only of incline gap HB CC 5F251
  • H01L31/06,300
    		•  ...potential barrier is composed only of PN homozygous gap type, e.g. bulk silicon PN homozygous solar cell or thin film polycrystalline silicon PN homozygous solar cell HB CC 5F251
  • H01L31/06,310
    		•  ....solar cell of multi-junction or tandem type HB CC 5F251
  • H01L31/06,320
    		•  ....device including only AIIIBV compound other than doping materials or other impurities, e.g. GaAs or InP solar cell HB CC 5F251
  • H01L31/06,350
    		•  ...potential barrier composed only of shot-key-type HB CC 5F251
  • H01L31/06,400
    		•  ...potential barrier composed only of PN heterozygous type HB CC 5F251
  • H01L31/06,410
    		•  ....solar cell of multi-junction or tandem type HB CC 5F251
  • H01L31/06,420
    		•  ....composed only of AIIBVI compound semi conduntor, e.g. CdS/CdTe solar cell HB CC 5F251
  • H01L31/06,430
    		•  ....composed only of AIIIBV compound semi conduntor, e.g. GaAs/AIGaAs or InP/GaInAs solar cell HB CC 5F251
  • H01L31/06,440
    		•  ....composed of heterozygous with element of group IV in periodic table, e.g. ITO/Si, GaAs/Si or CdTs/Si solar cell HB CC 5F251
  • H01L31/06,450
    		•  ....composed of AIVBIV heterozygous, e.g. Si/Ge, SiGe/Si or Si/SiC solar cell HB CC 5F251
  • H01L31/06,455
    		•  .....composed of heterozygous between crystalline material and amorphous material, e.g. heterozygous having thin intrinsic layer or heterozygous with HIT (registered trademark) solar cell HB CC 5F251
  • H01L31/06,460
    		•  ....include AIBIIICVI compound, e.g. CdS/CuInSe2 [CIS] heterozygous solar cell HB CC 5F251
  • H01L31/06,500
    		•  ...potential barrier composed only of PIN type, e.g. PIN amorphous silicon solar cell HB CC 5F251
  • H01L31/06,510
    		•  ....solar cell of multi-junction or tandem type HB CC 5F251
  • H01L31/06,520
    		•  ....device composed of single crystalline or poly crystalline material HB CC 5F251
  • H01L31/06,600
    		•  ...include different types of potential barriers classified in two or more groups among H01L31/06, 100-H01L31/06, 500 HB CC 5F251
  • H01L31/08
    		•  .in which radiation controls flow of current through the device, e.g. photoresistors [2, 2006.01] HB CC 5F149
  • H01L31/08@F
    		•  Photoconductive materials [Si, Ge] HB CC 5F149
  • H01L31/08@G
    		•  .Manufacturing methods for photoconductive materials [Si, Ge] HB CC 5F149
  • H01L31/08@H
    		•  .Devices for photoconduction [having Si or Ge PN junctions] [devices for photoconduction which use Si] HB CC 5F149
  • H01L31/08@J
    		•  .Manufacturing devices for photoconductive materials [Si, Ge] HB CC 5F149
  • H01L31/08@K
    		•  Compounds which are photoconductive materials and their manufacture [GaAs, CdS, etc.] HB CC 5F149
  • H01L31/08@L
    		•  .Devices for photoconductive compounds [GaAs, CdS, etc.] HB CC 5F149
  • H01L31/08@M
    		•  Materials, manufacturing methods, and devices for optical photoconductive compounds [oxide semiconductors] HB CC 5F149
  • H01L31/08@N
    		•  Materials, manufacturing methods, and devices for photoconductive compounds [fir detecting infrared radiation HgCdTe (MCI), InSb, etc.] HB CC 5F149
  • H01L31/08@P
    		•  Materials, manufacturing methods, and devices for photoconductive compounds HB CC 5F149
  • H01L31/08@Q
    		•  Photoconductors for electrophotography HB CC 5F149
  • H01L31/08@R
    		•  Targets for image tubes [Si, Ge] HB CC 5F149
  • H01L31/08@S
    		•  Targets for image tubes [synthesized semiconductors] HB CC 5F149
  • H01L31/08@Z
    		•  Others HB CC 5F149
  • H01L31/10
    		•  ..characterised by potential barriers?, e.g. phototransistors[2006.01] HB CC 5F149
  • H01L31/10@A
    		•  Photodiodes and phototransistors HB CC 5F149
  • H01L31/10@B
    		•  .Avalanche type HB CC 5F149
  • H01L31/10@C
    		•  .using Schottky joining HB CC 5F149
  • H01L31/10@D
    		•  .Polychrome light distribution HB CC 5F149
  • H01L31/10@E
    		•  Electric field effect type HB CC 5F149
  • H01L31/10@F
    		•  Photo thyristors HB CC 5F149
  • H01L31/10@G
    		•  Periphery circuits HB CC 5F149
  • H01L31/10@H
    		•  characterized by electrode HB CC 5F149
  • H01L31/10@Z
    		•  Others HB CC 5F149
  • H01L31/12
    		•  .structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto (amplifiers using electroluminescent element and photocell H03F 17/00; electroluminescent light sources per se H05B 33/00) [2] HB CC 5F889
  • H01L31/12@A
    		•  Photocouplers and photoinsulators HB CC 5F889
  • H01L31/12@B
    		•  .Monolink type [light-receiving-light emitting diodes composed of unified elements and uniform substrates] HB CC 5F889
  • H01L31/12@C
    		•  .Laminated type HB CC 5F889
  • H01L31/12@D
    		•  .Transitive type HB CC 5F889
  • H01L31/12@E
    		•  .Reflective type HB CC 5F889
  • H01L31/12@F
    		•  .Peripheral circuits [for accessory electrical circuits and control] HB CC 5F889
  • H01L31/12@G
    		•  .Applied devices [using optical fibers] HB CC 5F889
  • H01L31/12@H
    		•  Monitors for luminescent devices [checking detection of optical emission] HB CC 5F889
  • H01L31/12@J
    		•  Luminescent, light-intercepting dual purpose devices [1 element for use with both] HB CC 5F889
  • H01L31/12@Z
    		•  Others HB CC 5F889
  • H01L31/14
    		•  ..the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers, image storage devices [2] HB CC 5F889
  • H01L31/14@A
    		•  Devices for optical-optical conversion HB CC 5F889
  • H01L31/14@B
    		•  image pickup conversion devices HB CC 5F889
  • H01L31/14@Z
    		•  Others HB CC 5F889
  • H01L31/16
    		•  ..the semiconductor device sensitive to radiation being controlled by the light source or sources [2] HB CC 5F889
  • H01L31/16@A
    		•  Photopotentiometers HB CC 5F889
  • H01L31/16@B
    		•  Detection of position using light [camera ranging] HB CC 5F889
  • H01L31/16@Z
    		•  Others HB CC 5F889
  • H01L31/18
    		•  .Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof [2, 2006.01] HB CC 5F149
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