F-Term-List

H01L31/00-31/02@Z;31/08-31/08@Z;31/10-31/10@Z;31/18;H10K30/60-30/65;39/30

AA00
KINDS OF LIGHT-RECEIVING ELEMENTS AND RADIATION DETECTING ELEMENTS

AA01

AA02

AA03

AA04

AA05

AA06

AA07

AA08

AA09

. Photodiodes (PD)

. . PN junction type

. . PN heterojunction type

. . PIN junction type

. . Schottky barrier type

. . . MSM Schottky barrier type

. . Avalanche-photodiodes (APD)

. . . Absorption/multiplication separating type APD

. . . Superlattice APD

AA11

AA12

AA13

AA14

AA15

AA17

AA18

AA20

. Phototransistors (PT)

. . Bipolar type

. . . Heterojunction type

. . Field effect type (FET)

. . . MIS (MOS) type FET

. Photoconductors (Photoconductive type)

. . P-type

. Other type elements

AB00
MATERIAL OF LIGHT-RECEIVING ELEMENT BODY (SUBSTRATE, ELECTRODE, ETC. ARE CLASSIFIED IN FA TO HA)

AB01

AB02

AB03

AB04

AB05

AB07

AB09

. Materials

. . Group IV

. . . Single crystals, polycrystalline

. . . Microcrystalline

. . . Amorphous

. . Group III-V

. . Group II-VI (HgCdTe, etc.)

AB11

AB12

AB13

AB14

AB16

AB17

AB19

. . Organic materials

. . . Azo dyes

. . . Phthalocyanine compounds

. . . Hydrazone compounds

. Dopant materials

. . Conductivity type decision

. Binder materials (for element bodies only)

BA00
OBJECTIVES AND EFFECTS

BA01

BA02

BA03

BA04

BA05

BA06

BA07

BA08

BA09

BA10

. Sensitivity improvement (quantum efficiency improvement)

. . Reduction and prevention of surface reflection

. Response improvement (frequency characteristics improvement)

. S/N ratio improvement

. Reduction of dark currents

. Dynamic range "enlarging " (high contrast ratio)

. Energy resolution improvement (radiation, particle beam)

. Prevention of edge breakdown

. Improvement of spectral characteristics

. Performance stabilization (characteristic fluctuation prevention)

BA11

BA12

BA13

BA14

BA15

BA16

BA17

BA18

. Band gap control

. Impurity concentration control

. Lattice constant control

. Reduction of electric resistance

. Reduction of capacitance

. Increase of capacitance

. Prevention of malfunction, countermeasures to disturbance

. Productivity improvement, cost reduction

BA21

BA23

BA25

BA26

BA28

BA30

. Improvement of environmental resistance characteristics (heat, water, dust, vibrations, etc.)

. Extension of life

. Miniaturization, weight reduction

. Relating to installation and fixation

. Relating to manufacturing process (yield improvement, etc.)

. Other objectives and effects

BB00
APPLICATION

BB01

BB02

BB03

BB05

BB06

BB07

BB08

BB09

BB10

. For optical communication

. For line sensors

. For image sensors

. For image pick-up tube targets

. For solar cells

. For measurement

. For medical

. Electrophotographic photoconductor

. For optical pickup

BB11

BB20

. For remote control

. Other applications

CA00
AMORPHOUS (INCLUDING MICROCRYSTALLINE) MANUFACTURING METHOD AND PROCESS

CA01

CA02

CA04

CA05

CA07

CA08

CA09

CA10

. Chemical vapor deposition (CVD)

. . Plasma CVD method (glow discharge method)

. Physical vapor deposition (PVD)

. . Vacuum deposition method

. Manufacturing devices

. . Deposition chamber structure

. Additional processes (doping, heat treatment, etc.)

. Others relating to amorphous manufacturing

CB00
MANUFACTURING METHOD AND PROCESS OF OBJECTS OTHER THAN AMORPHOUS

CB01

CB02

CB03

CB04

CB05

CB06

CB07

CB08

CB09

CB10

. Crystal growth

. . Liquid-phase epitaxial-layer method (LPE)

. . Vapor-phase epitaxial-layer method (VPE)

. . . MOCVD method

. Thin-film techniques (CB01-04 are prioritized)

. . Vacuum deposition method

. . Sputter deposition method

. Doping

. . Thermal diffusion

. . Ion implantation

CB11

CB12

CB14

CB15

CB17

CB18

CB20

. Heat treatment

. . Light annealing

. Etching

. Electrode forming method

. Element division (dicing, scribe)

. Characterized by manufacturing conditions (temperature, pressure, time, etc.)

. Others, matters relating to this section

DA00
GENERAL ELEMENT STRUCTURES (TYPING IS AA, AND DETAILS ARE FA, ETC.)

DA01

DA02

DA03

DA04

DA05

DA06

. Relating to structures of photodiodes

. . Mesa type

. . Substrate type (bulk type)

. . Reach-through type

. . Backside incident type

. . Waveguide type

DA11

DA12

DA16

. Relating to structures of phototransistors

. . Base non-terminal type

. Relating to structures of photoconductors

DA21

DA22

DA23

DA24

DA25

DA26

DA27

DA28

DA29

DA30

. Components of element bodies

. . Guard rings

. . . Guard ring structures

. . Chennel stoppers

. . Buried layers

. . Window layers

. . Bonding layers (including between a layer and a layer, and between a substrate and a layer)

. . . Buffer layers (for lattice constant matching, etc.)

. . . . Graded buffer layers

. . . Block layers

DA31

DA32

DA33

DA34

DA35

DA36

DA39

. . Band structures

. . . Quantum structures

. . . . Quantum dots

. . . . Quantum wires or nanorods

. . . . Superlattices, multiple quantum well

. . . Graded

. . Photonic crystals

DA41

DA44

DA50

. Lamination type (tandem type)

. Characterized by shapes of elements (including a surface shape)

. Others, matters relating to this section

EA00
MODULARIZATION

EA01

EA02

EA03

EA04

EA05

EA06

EA07

. Multiple elements of the same type

. . Arrays

. . . One-dimension (line sensors)

. . . Two-dimension (solid-state imaging device, etc.)

. . . Separation between elements

. . . . PN separation

. . . . Insulation isolation

EA11

EA12

EA13

EA14

EA16

EA18

EA20

. Heterogeneous composite elements

. . Composite with amplifying elements

. . Composite with switching elements

. . Composite with light-emitting elements

. Layout of elements

. Electric connection between elements

. Other matters relating to modularization

FA00
ELECTRODES (TERMINALS ARE JA)

FA01

FA02

FA03

FA04

FA05

FA06

FA07

. Materials

. . Transparent electrodes

. . . SnO2

. . . ITO

. . Metal electrodes

. . Organic materials

. . Paste members

FA11

FA12

FA13

FA15

FA16

FA17

FA18

FA20

. Structures

. . Planar shapes, layout

. . Multi-layer structures

. Functions

. . Reflective film combined-use

. . For mounting

. . Light-shielding film combined-use

. Other matters relating to electrodes

GA00
SUBSTRATES (ON WHICH ELEMENT BODY IS FORMED)

GA01

GA02

GA03

GA04

GA05

GA06

GA07

. Materials (AB is prioritized)

. . Insulating substrates (glass, etc.)

. . Semiconductor substrates

. . . Group IV

. . . . SOI substrates

. . . Group III-V

. . . Aiming at hetero-junction

GA11

GA12

GA13

GA17

GA20

. Structures

. . Surface shapes

. . Multi-layer structures

. Surface orientation

. Other matters relating to substrates

HA00
OTHER ELEMENT COMPONENTS

HA01

HA02

HA03

HA04

HA05

HA06

HA07

HA09

HA10

. Anti-reflection films

. . Materials

. . . Inorganic materials

. . Structures

. Filter membranes (including wavelength conversion and the like)

. . Materials

. . Structures

. Reflective films (excluding electrodes)

. Light-shielding films, radiation shielding film (excluding electrodes)

HA11

HA12

HA13

HA15

HA17

HA20

. Surface protection films

. . Materials

. . . SiO2

. Plasmon resonance (HA15 is prioritized in HA)

. Scintillators (separated bodies from elements are classified in JA18)

. Other matters relating to this section

JA00
CASES, MOUNTING

JA01

JA02

JA03

JA05

JA06

JA07

JA08

JA09

JA10

. Element mounting

. . On terminals and lead frames

. . On bases

. Cases, bases, and packages

. . Molding type

. . Can sealing

. Bonding

. . Wire bonding

. . Flip-chip bonding

JA11

JA12

JA13

JA14

JA17

JA18

JA19

JA20

. Coupling with optical members

. . Lenses

. . Optical filters

. . Light guides (optical fibers, etc.)

. Radiation shielding plates

. Scintillator plates

. Terminals, and lead frames

. Other matters relating to cases and mounting

KA00
PERIPHERAL CIRCUITS

KA01

KA02

KA04

KA05

KA06

KA07

. Targeting multiple light-receiving elements

. Irradiating bias light

. Circuit functions

. . Gain control

. . Temperature compensation

. . High-speed response

KA11

KA12

KA13

KA14

KA15

KA16

KA17

KA20

. Bias circuits

. . Current voltage converting units

. . Amplifying units

. . Switching units

. Detection circuits for feedback

. . Output current voltage detection of light-receiving elements

. . Temperature detection

. Matters relating to other peripheral circuits (reading circuits, etc.)

LA00
LIGHT-RECEIVING WAVELENGTH BANDS, AND DETECTION OBJECTS

LA01

LA02

LA03

LA04

LA06

LA07

LA08

LA09

. Infrared light

. Visible light

. Ultraviolet light

. Terahertz bands

. Radiations

. . X-rays

. Variable light-receiving wavelength

. Wideband light-receiving (including multi-colour light-receiving)

H10K30/60-30/65;39/30

XA00
ORGANIC PHOTOELECTRIC CONVERSION ELEMENTS

XA01

. Sensitive devices to infrared light, visible light, shorter wavelength, and particle radiation

XA31

XA32

XA33

. Selection of materials

. . Characterized by organic semiconductor materials

. . . Characterized by polymer compounds

XA43

. . . Characterized by low molecular weight compounds

XA51

XA52

XA53

XA54

XA55

XA56

. . Characterized by specific parts of a device or element materials

. . . Characterized by additives

. . . Characterized by combinations of photoelectric conversion layer materials

. . . Characterized by materials for electron-transporting layers

. . . Characterized by materials for positive hole transporting layers

. . . Materials for electrodes

XA61

. Characterized by methods or devices for manufacturing and processing

H01L31/00-31/02@Z;31/08-31/08@Z;31/10-31/10@Z;31/18

XB00
INORGANIC PHOTOELECTRIC CONVERSION ELEMENTS

XB01

XB02

XB03

XB04

XB05

XB06

XB07

XB08

. Details

. . Containers, and encapsulations

. . Covering

. . Electrodes

. . Optical elements or optical devices coupled with devices

. . Special surface structures

. . Cooling, heating, ventilation or temperature compensation devices

. . Characterized by supporting substrates

XB11

XB12

XB13

XB14

XB15

XB16

XB17

XB18

XB19

XB20

. Characterized by semiconductor bodies

. . Characterized by materials

. . . Inorganic materials

. . . . Selenium or tellurium

. . . . Including only elements from Group IV of the periodic table

. . . . . Characterized by doping materials

. . . . Including only II-VI compounds

. . . . Including only III-V compounds

. . . . Including only IV-IV compounds

. . . . Including only other compounds

XB21

XB22

XB24

XB25

XB26

XB27

XB28

. . . . Including two or more places of XB14 to XB20

. . . . . In different semiconductor regions

. . Characterized by semiconductor shapes or shapes and the like of semiconductor regions

. . Characterized by crystal structures or directions of crystal surfaces

. . . Polycrystalline semiconductors (XB08 is prioritized)

. . . Amorphous semiconductors (XB08 is prioritized)

. . . Other non-single crystal materials (XB08 is prioritized)

XB31

XB32

XB33

XB34

XB35

XB36

XB37

XB38

XB39

XB40

. Radiation controlling a current flowing through a device

. . Sensitive to infrared light, visible light, and ultraviolet light (XB34 is prioritized)

. . Characterized by at least one potential barrier

. . . Sensitive to infrared light, visible light, or ultraviolet light

. . . . Characterized by single potential barrier

. . . . . PN homojunction type potential barriers

. . . . . PIN type potential barriers

. . . . . Potential barriers acting in avalanche mode

. . . . . Shottky type potential barriers

. . . . . PN heterojunction type potential barriers

XB41

XB42

XB43

XB44

XB45

XB46

XB47

XB48

. . . . Characterized by two potential barriers

. . . . Characterized by at least three potential barriers

. . . . Characterized by electric field effect action

. . . . . Conductor-insulator-semiconductor type

. . . Devices sensitive to ultra short wave

. . . . Bulk effect radiation detector type

. . . . Surface barriers or thin PN junction detector type

. . . . Characterized by electric field effect action

XB51

. Manufacturing or processing methods or devices

5F149	LIGHT-RECEIVING ELEMENTS
	H10F30/00 -30/298;39/90;77/00;99/00;H10K30/60-30/65;39/30