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F-Term-List

5F251 PHOTOVOLTAIC DEVICES
H02S10/00 -10/40;30/00-99/00;H10F10/00-19/90;99/00,100;H10K30/00;30/50-30/57;39/00-39/18
H01L31/04-31/06,600;H02S10/00-10/40;30/00-99/00;H10K30/00;30/50-30/57;39/00-39/18 AA AA00
MATERIAL OF THE BODY 		AA01 AA02 AA03 AA04 AA05 AA07 AA08 AA09 AA10
. Group IV . . Single crystals . . Polycrystals . . Microcrystals * . . Amorphous materials * . Compound semiconductors * . . Group III-V (e.g. GaAs) * . . Group II-VI (e.g. CdS) * . . Group I-III-VI (e.g. CuInSe2) *
AA11 AA12 AA14 AA16 AA18 AA20
. Organic semiconductors * . . Phthalocyanine dye . Electrolytes or semiconductor electrodes (e.g. in wet methods) * . Dopant materials * . Binder materials * . Other materials *
BA BA00
USE OR PURPOSE 		BA01 BA02 BA03 BA04 BA05
. Use . . For satellites . . For building materials . . Clocks or calculators . . For other use *
BA11 BA12 BA13 BA14 BA15 BA16 BA17 BA18
. Purposes (excluding higher efficiency and cost reduction) . . For enlarging areas . . For increasing power . . For mass production r automation . . For flexibility . . For improving light transmissivity . . For stabilizing output . . For enhancing environmental resistance
CA CA00
PROCESS FOR MANUFACTURING AMORPHOUS MATERIAL (INCLUDING MICROCRYSTAL) 		CA01 CA02 CA03 CA04 CA05 CA06 CA07 CA08 CA09
. Growth layers . . p (p+) layers . . i layers . . n (n+) layers . . Interface layers . Raw materials . . Raw gases * . . Dilution gases * . . Characterized by dilution ratios
CA11 CA12 CA13 CA14 CA15 CA16 CA17 CA18 CA19 CA20
. Physical vapor deposition (PVD) . . Vacuum deposition methods . . Sputtering . Chemical vapor deposition (CVD) . . Plasma CVD (glow discharge) . . . Using high frequencies . . . Using microwaves . . Thermal CVD processes . . Photo CVD processes . Other processes for manufacturing amorphous materials
CA21 CA22 CA23 CA24 CA26 CA27
. Device structures . . Separating deposition chambers for depositing layers successively . . Structures for discharging electrodes . . Shapes or arrangements of substrate holders or means for heating substrates . Additional mechanisms . . For applying magnetic fields
CA31 CA32 CA34 CA35 CA36 CA37 CA40
. Treatment processes . . Annealing or plasma treatments . Manufacturing conditions . . Pressure or vacuum levels . . Temperature of substrates . . Gas flow rates . Others relating to the processes for manufacturing amorphous materials
CB CB00
PROCESSES FOR MANUFACTURING MATERIALS OTHER THAN AMORPHOUS MATERIALS 		CB01 CB02 CB03 CB04 CB05 CB06 CB08 CB09 CB10
. Silicon-crystal growth methods . . Single-crystal growth methods . . . CZ (pulling-up) method . . Polycrystal growth methods . . . Casting . . . Ribbon methods (including EFG) . Growth methods of group III-V elements . . On single-crystal silicon substrates . . Peeled single-crystal films
CB11 CB12 CB13 CB14 CB15 CB18 CB19 CB20
. Film deposition . . CVD . . Coating or baking . . Vacuum deposition . . Sputtering . Doping (including limiting concentration) . . Ion implantation . . Thermal diffusion
CB21 CB22 CB24 CB25 CB27 CB28 CB29 CB30
. Etching . . Dry etching . Heat treatments . . Light annealing . Forming electrodes . Separating elements . Characterized by manufacturing conditions . Characterized by other manufacturing processes
DA DA00
ELEMENT STRUCTURE (DETAILS THEREOF EA-HA) 		DA01 DA02 DA03 DA04 DA05 DA06 DA07 DA08 DA09 DA10
. Shapes of elements . Junctions . . pn junctions . . pin junctions . . Schottky junctions . . . Schottky metals * . . Heterojunctions . . MIS junctions . . . Materials of insulation films * . . Back-contact
DA11 DA12 DA13 DA15 DA16 DA17 DA18 DA19 DA20
. Band structures . . Graded bands . . Superlattices . Tandem structures . . Types thereof . . . Repeating the same junctions . . Intermediate layers for bonding layers . . . pn tunnel layers . Others characterized by element structures
EA EA00
MODULARIZING (INTEGRATING) 		EA01 EA02 EA03 EA04 EA05 EA06 EA07 EA08 EA09 EA10
. Shapes of modules . Connection structures . . At the sides of the elements . . At the ends of the substrates . . In rooftile-lay patterns . . To diodes . Patterning . . Objects to be patterned . . . Surface electrodes . . . Element bodies
EA11 EA13 EA14 EA15 EA16 EA17 EA18 EA19 EA20
. . . Backplane electrodes . . Means therefor . . . Mask deposition . . . Screen printing . . . Laser scribers . Processing connectors . Protective films * . Interconnector . Others relating to modularizing
FA FA00
ELECTRODE 		FA01 FA02 FA03 FA04 FA06 FA07 FA08 FA09 FA10
. Materials thereof . . Transparent electrodes * . . . SnO2 . . . ITO . . Metal electrodes * . . Organic materials * . . Dopants * . . Members of blocking layers * . . Pastes *
FA11 FA12 FA13 FA14 FA15 FA16 FA17 FA18 FA19
. Structures thereof . . Kinds thereof . . . Surface electrodes . . . . Collectors . . . Backplane electrodes . . Shapes thereof . . Structures . . . Double-layered . . . Textured
FA21 FA22 FA23 FA24 FA25 FA30
. . Functions . . . For preventing the surfaces from reflecting light . . . Combined with reflective layers . . . Decreasing resistance . . . Combined with doping (electric fields of the backplanes) . Others relating to electrodes
GA GA00
SUBSTRATE 		GA01 GA02 GA03 GA04 GA05 GA06
. Materials thereof . . Conductive * . . Insulating * . . Semiconductor substrates * . . Flexible substrates * . . For coating *
GA11 GA12 GA13 GA14 GA15 GA16 GA20
. Structures or treatments . . Smoothing the surfaces . . . By coating . . Roughening the surfaces . . . By chemical etching . . . By coating . Others relating to substrates
HA HA00
OTHER ELEMENT 		HA01 HA02 HA03 HA04 HA05 HA06 HA07
. Anti-reflection films . . Materials . . . Inorganic * . . . Organic * . . Structures thereof . . . Optical multilayer films . . . Textured
HA11 HA12 HA13 HA14 HA15 HA16 HA17 HA18 HA19 HA20
. Filter films . . Types thereof . . . Phosphor films . . . Optical multilayer films . . . Color filters or inks . . Functions thereof . . . Converting wavelengths . . . Dividing wavelengths . Window layers . Others relating to "other elements"
JA JA00
GENERATOR 		JA01 JA02 JA03 JA04 JA05 JA06 JA07 JA08 JA09
. Arrays (panels) . . Panel structures . . . Materials of windows * . . . Fillers * . . . Backplane sheet . . . Laminating modules . . . Connecting modules . . . . Diode-connected (e.g. for preventing currents from reversing) . . . Frame
JA12 JA13 JA14 JA15
. . Connecting panels . . Supporting structures . . . For adjusting angles (including solar tracking apparatus) . . Cleaning devices or snow-proof structures
JA21 JA22 JA23 JA24 JA25 JA27 JA28 JA29 JA30
. Concentrators . . Lenses . . Reflecting mirrors or reflecting plates . . Optical fibers . . Having optical filters . Terminal boxes . Combined with secondary cells . Combined with apparatus using solar heat . Generators not otherwise provided for
KA KA00
CONTROLLING OR TESTING 		KA01 KA02 KA03 KA04 KA05 KA06 KA07 KA08 KA09 KA10
. Stabilizing output . . Monitoring . . Controlling . . . Constant voltage circuits (DC-DC converters) . . . Switching power supplies . . . Controlling the quantity of incident light . Maintenance . . Detecting or warning failures . Apparatus for testing functions . Controlling or testing not otherwise provided for
H10K30/00;30/50-30/57;39/00-39/18 XA XA00
ORGANIC SOLAR CELL 		XA01
. Organic solar cells of infrared, visible, short wavelength or particle beam
XA31 XA32 XA33
. Selection of material . . Feature in the organic semiconductor material . . . Feature in polymer compound
XA43
. . . Feature in low molecular weight compound
XA51 XA52 XA53 XA54 XA55 XA56
. . Characterized by the specific site of the device or element material . . . Characterized by the additive . . . Characterized by the combination of the photoelectric conversion layer material . . . Characterized by the electron transport layer material . . . Characterized by the positive hole transport layer material . . . Electrode material
XA61
. Characterized in the method or device for manufacturing and processing
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