F-Term-List

H01L21/18-21/20;21/34-21/36;21/84

AA00
RECRYSTALLIZATION MEANS

AA01

AA02

AA03

AA04

AA05

AA06

. Recrystallization by beam irradiation

. . Laser beams

. . Electron beams

. . Ion beams

. . Neutral particle beams

. . Others

AA11

AA12

AA13

AA14

AA15

AA17

AA18

. Heating means other than beam irradiation

. . Resistance heating

. . . Heaters that do not make contact with substrates

. . . . Rod-like heaters

. . . . Hot wires

. . . Electric furnace heating

. . . Heating from susceptors

AA22

AA23

AA24

AA25

AA26

AA27

AA28

AA30

. . High frequency induction heating

. . . Zone melting (ZM)

. . Lamps

. . . Flash lamps

. . . . Zone melting (ZM)

. . . Continuously lit lamps

. . . . Zone melting (ZM)

. . Heating using sunlight

BA00
BEAM IRRADIATION PROCEDURES

BA01

BA02

BA03

BA04

BA05

BA06

BA07

BA08

BA09

BA10

. Beam scanning

. . Overlap scanning

. . Rotary scanning

. . Beam cross-sectional shapes

. . . Double beams

. . . Donut-shaped beams

. . . Linear beams

. . . Crescent-shaped and arrow-shaped beams

. . . Pseudo-linear electron beams

. . . Scanning using birefringent plates

BA11

BA12

BA13

BA14

BA15

BA16

BA17

BA18

BA20

. . . Scanning using multiple irradiation sources

. . . Scanning using mask plates

. . Modification of scanning speed

. . Multiple beams

. . . Two or more types of laser beams

. . . Two or more types of electron beams

. . . Combined use of electron beams and laser beams

. . Scanning system designs

. Batch irradiation

BB00
TYPES OF IRRADIATING BEAMS

BB01

BB02

BB03

BB04

BB05

BB06

BB07

BB09

BB10

. Argon lasers

. Nd-YAG lasers

. . Q switch pulses

. . Continuous waves

. Ruby lasers

. CO2 lasers

. Other lasers

. Pulsed electron beams

. Continuous wave electron beams

CA00
RECRYSTALLIZATION ISSUES

CA01

CA02

CA03

CA04

CA05

CA06

CA07

CA08

CA09

CA10

. Prevention of distortion and warping

. Prevention of contamination and substrate surface cleaning

. Strengthening of adhesive force (i.e., prevention of separation)

. Increase in regions of monocrystallization

. Local cooling

. Ability to radiate heat

. Uniform annealing

. Leveling

. Avoidance of the effects of and damage due to heating in lower layers

. Improved throughput

DA00
RECRYSTALLIZED LAYER MATERIALS

DA01

DA02

DA03

DA04

DA05

DA06

DA08

DA09

DA10

. Silicon (Si)

. . a-Si:H films

. Germanium (Ge)

. Groups III-V

. . Gallium arsenide (GaAs)

. Groups II-VI

. Silicides

. Insulators

. Others

DB00
METHODS OF DEPOSITING RECRYSTALLIZED LAYERS

DB01

DB02

DB03

DB04

DB05

DB06

DB07

DB08

DB09

DB10

. Chemical vapor deposition (CVD)

. . Low pressure chemical vapor deposition

. . Plasma chemical vapor deposition

. Vapor deposition

. . Simple vapor deposition

. . . Molecular beam epitaxy (MBE)

. . Sputtering

. Reactive sputtering

. Film deposition from a liquid phase

. Others

EA00
COMMON FEATURES

EA01

EA02

EA03

EA04

EA05

EA06

EA07

. Capping technology

. . Characteristic cap materials

. . Characteristic layer structures

. . . Multi-layer caps

. . . . Polysilicon caps

. . . Reflection-suppressing films

. . . . Stripe-type films

EA11

EA12

EA13

EA15

EA16

. Designs involving backing layers

. . Two or more insulator film layers

. . Variants with metal layers interposed

. Processes characterized by pre-treatment

. Processes characterized by after-treatment

FA00
SEEDLESS RECRYSTALLIZATION TECHNOLOGY

FA01

FA02

FA03

FA04

FA05

FA06

FA07

FA08

. Control of crystal nuclei

. . Planar designs

. . . Necking

. . Local cooling

. . Conversion to amorphous material

. . Imparting of a high concentration of impurities

. . Conversion to thin films

. . Recrystallization onto a liquid phase (i.e., rheotaxis)

FA12

FA13

FA14

FA15

FA16

FA17

FA19

. . Edge effect epitaxy

. . . Cyclic groove formation

. . . Acyclic groove formation

. . . . Formation of a single groove

. . . Methods of covering indented sections

. . . Flow fill-in methods for indented sections

. . Complexing and multistep processing

FA21

FA22

FA23

FA24

FA25

FA26

FA27

FA28

FA29

. Selective technology

. . Mesa islands

. . Local oxidation of silicon (i.e., LOCOS) islands

. . Selective doping

. . Use of reflective plates (including reflective films)

. . Use of differences in thickness of backing layers

. . Use of reflection-suppressing films

. . Selective scanning

. . Use of filters

GA00
TECHNOLOGY FOR RECRYSTALLIZATION WITH SEEDS

GA01

GA02

. Substrate seeding technology

. Use of separate seeds

GB00
LATERAL SEEDING TECHNOLOGY

GB01

GB02

GB03

GB04

GB05

GB06

GB07

GB08

GB09

. Characteristic structure in each portion

. . Characteristic mode of film processing

. . Seed structure designs

. . . Sheets over projecting sections

. . . Insertion of metal or silicide layers

. . Characteristic opening shapes

. . . Tapered variants

. . Characteristic cap layer in the seeded portion

. . Selection of substrate face orientation

GB11

GB13

GB14

GB16

. Characteristic irradiating or heating means

. Measures against excessive heating

. . Characteristic structure

. Layer separating structures

GC00
VERTICAL SEEDING TECHNOLOGY

GC01

GC02

GC03

GC04

GC05

GC06

GC07

GC08

GC09

GC10

. Semiconductors and semiconductor monocrystals

. . Use of intrinsic layer substrates

. . . Silicon substrates

. . . Gallium arsenide (GaAs) substrates

. Semiconductor and insulator monocrystals

. . Sapphires

. . Spinel

. . Magnesium oxide (MgO)

. . Calcium fluoride (CaF2)

. . Others

HA00
COMPLEXING AND MULTISTEP PROCESSING

HA01

HA03

HA04

HA05

HA06

HA07

HA08

. Multistep processing

. Complexing with other technology

. . Complexing with separation by implanted oxygen (SIMOX) technology

. . Complexing with full isolation by oxidized silicon (FIPOS) technology

. . Complexing with ion implantation

. . Complexing with diffusion

. . Recrystallization with epitaxy

JA00
APPLICATIONS TO DEVICES

JA01

JA02

JA03

JA04

JA05

JA06

JA07

JA08

JA09

JA10

. Metal-oxide semiconductor field effect transistors (MOSFET)

. . Bottom layer gates

. . Double gates

. . Complementary metal-oxide semiconductors (CMOS)

. Bipolar transistors

. Resistance elements

. Diodes

. . Photodiodes

. Solar cells

. Others

JB00
STRUCTURE OF ALL PORTIONS

JB01

JB02

JB03

JB04

JB05

JB06

JB07

JB08

JB09

JB10

. Characteristic connection structure

. . Direct connections

. . . Internal connections

. . . . Metals

. . . . Impurities

. . . Side connections

. . . . Stepped connections

. . Indirect connections

. Heat radiation and shielding

. Leveled structure

KA00
DIRECT FILM FORMATION TECHNOLOGY

KA01

KA02

KA03

KA05

KA06

KA07

KA08

KA10

. Lattice matching technology

. . Superlattice buffers

. Superlattice layers (i.e., active regions)

. General film formation technology

. Two types of technology to form films

. . Vapor phase growth and liquid phase growth

. . Vapor phase growth and vapor deposition

. Others

KB00
BONDING TYPES

KB01

KB02

KB04

KB05

KB06

KB09

. Semiconductor-to-semiconductor bonding

. . Hetero structures

. Use of interposed insulator layers

. . Oxide films only

. . Use of films other than oxide films

. Bonding apparatuses

5F052	Recrystallization technology
	H01L21/18 -21/20;21/34-21/36;21/84