F-Term-List

H01L21/205;21/31-21/31@Z;21/365;21/469;21/86

AA00
GROWTH METHOD

AA01

AA02

AA03

AA04

AA05

AA06

AA07

AA08

AA09

AA10

. Hydrogen reduction method

. Disproportionation method

. Thermal decomposition method

. . MOCVD

. . . MOMBE or Gas Source Molecular Beam Epitaxy

. Low-pressure CVD

. . Vacuum CVD

. Plasma CVD

. . Microwave plasma

. . . ECR plasma

AA11

AA12

AA13

AA14

AA15

AA16

AA17

AA18

AA19

AA20

. Light CVD

. . Laser CVD

. . Light plasma CVD

. Electron beam CVD

. Atomic layer epitaxy

. Radical CVD

. HOMOCVD

. Vacuum deposition process

. Sputtering method

. Diffusive film forming method

AB00
COMPOSITION OF GROWTH LAYERS

AB01

AB02

AB03

AB04

AB05

AB06

AB07

AB08

AB09

AB10

. IV group *

. . Si

. . . Poly Si

. . . Amorphous Si

. . Ge

. . SiC

. . C

. . Sn

. III-V groups *

. . GaAs

AB11

AB12

AB13

AB14

AB15

AB17

AB18

AB19

. . GaP

. . InP

. . InSb

. . GaN

. . Boron compound *

. . Ternary mixed crystal *

. . Quaternary mixed crystal *

. . Quintuple or more mixed crystal *

AB21

AB22

AB23

AB24

AB26

AB27

AB28

AB30

. II-VI groups *

. . Zn system *

. . Cd system *

. . Hg system *

. IV-VI groups *

. . Pb system *

. Chalcopyrite *

. Silicide *

AB31

AB32

AB33

AB34

AB35

AB36

AB37

AB38

AB39

AB40

. Inorganic insulating layer

. . Silicon oxide film

. . Silicon nitride film

. . Oxidised nitride film or SiOxNy

. . PSG

. . BSG

. . Sapphire

. . Spinel

. Organic insulating layer *

. Others *

AC00
INTRODUCING GAS

AC01

AC02

AC03

AC04

AC05

AC07

AC08

AC09

. Hydrogen compounds e.g. SiH4 excluding NH3

. Halides *

. . Chlorides or SiCl4 or the like

. . Iodides or GeI4 or the like

. Halogenated hydrides e.g.SiH2Cl2

. Organic compound gases *

. . Methyl compounds

. . Ethyl compounds

AC11

AC12

AC13

AC14

AC15

AC16

AC17

AC18

AC19

AC20

. O2

. NH3

. HCl

. using carrier gases other than hydrogen

. . N2

. . Ar

. . He

. . Mixture of two or more kinds including H2

. Dopant gases *

. . for deep level formation *

AD00
GROWTH CONDITION (1) FILM FORMING TEMPERATURE T: ALL OF THE SUBJECT MATTER FOR FILM FORMING TEMPERATURE DESCRIBED IN THE "SCOPE OF CLAIMS" AND THE "WORDING EXAMPLE" PARTS ARE ANALYSED, BUT PRIOR ARTS ARE NOT ANALYSED.

AD01

AD03

AD04

AD05

AD06

AD07

AD08

AD09

AD10

. Temperature associated with dew point or decomposition temperature of gases

. T<0 degree centigrade

. 0<=T<100 degree centigrade

. 100<=T<200 degree centigrade

. 200<=T<300 degree centigrade

. 300<=T<400 degree centigrade

. 400<=T<500 degree centigrade

. 500<=T<600 degree centigrade

. 600<=T<700 degree centigrade

AD11

AD12

AD13

AD14

AD15

AD16

AD17

AD18

. 700<=T<800 degree centigrade

. 800

. 900<=T<1000 degree centigrade

. 1000<=T<1100 degree centigrade

. 1100<=T<1200 degree centigrade

. 1200<=T<1300 degree centigrade

. 1300<=T<1400 degree centigrade

. 1400 degree centigrade<=T

AE00
GROWTH CONDITION (2) PRESSURE P DURING FILM FORMATION: ALL OF THE SUBJECT MATTER FOR PRESSURES DURING FILM FORMATION DESCRIBED IN THE "SCOPE OF CLAIMS" AND THE "WORDING EXAMPLE" PARTS ARE ANALYSED, BUT PRIOR ARTS ARE NOT ANALYSED.

AE01

AE02

AE03

AE05

AE07

AE09

. Depressurisation without pressure value

. . P<10^-9Torr or P<1.33x10^-7Pa

. . 10^-9<=P<10^-8Torr or 1.33x10^-7<=P<1.33x10^-6Pa

. . 10^-8<=P<10^-7Torr or 1.33x10^-6<=P<1.33x10(sup>-5Pa

. . 10^-7<=P<10^-6Torr or 1.33x10^-5<=P<1.33x10^-4Pa

. . 10^-6<=P<10^-5Torr or 1.33x10^-4<=P<1.33x10^-3Pa

AE11

AE13

AE15

AE17

AE19

. . 10^-5<=P<10^-4Torr or 0.01<=P<0.1mTorr 1.33x10^-3<=P<1.33x10^-2Pa

. . 10^-4<=P<10^-3Torr or 0.1<=P<1mTorr 0.0133<=P<0.133Pa

. . 10^-3<=P<10^-2Torr or 1<=P<10mTorr 0.133<=P<1.33Pa

. . 10^-2<=P<0.1Torr or 10<=P<100mTorr 1.33<=P<13.3Pa

. . 0.1<=P<1Torr or 100<=P<1000mTorr 13.3<=P<133Pa

AE21

AE23

AE25

AE27

AE29

AE30

. . 1<=P<7.6Torr or 0.0013<=P<0.01atom. 133<=P<1013Pa

. . 7.6<=P<76Torr or 0.01<=P<0.1atm. 10.13<=P<101.3hPa

. . 76<=P<760Torr or 0.1<=P<1atm. 101.3<=P<1013hPa

. . Units other than Torr atm. or Pa *

. Normal pressure (1 atm. 760Torr or 1013hPa)

. Pressurisation

AF00
COMPOSITION OF FORMED FILM PLANES, FEATURE OF SUBSTRATES, DUMMY SUBSTRATE, OR MASK.

AF01

AF02

AF03

AF04

AF05

AF06

AF07

AF08

AF09

AF10

. Planes to be film-formed being semiconductors

. . Film formation on the planes of IV group or Ge SiC C Sn or the like

. . . Film forming on Si planes

. . Film formation on the planes of III-V group or GaAs GaP InP GaN or the like

. . . Film formation on the plane of ternary or more mixed crystal e.g. GaAlAs

. . Film formation on the planes of II-VI group e.g. ZnSe

. Film-formed planes being insulators

. . Film-formed planes which only their surfaces are insulators

. . Film formation on alumina sapphire spinel or beryllia substrates

. Film-formed planes being metals

AF11

AF12

AF13

AF14

AF16

AF17

AF19

AF20

. characterised by the shape structure size thickness or the like

. . characterised by the surface state or surface roughness step and the like of substrates

. . . characterised by crystal orientation or plane orientation orientation flat and notch

. . . having film forming nuclei on the film-formed planes

. characterised by the physical properties of substrates

. . characterised by oxygen concentration

. characterised by the structure or use of dummy substrates

. characterised by the shape or material of masks for selective growth

BB00
PURPOSE

BB01

BB02

BB03

BB04

BB05

BB06

BB07

BB08

BB09

BB10

. Uniformity of film thickness including flattening

. . Improvement of uniformity of film thickness in wafer planes

. . Prevention of fluctuation of film thickness according for every wafer

. Improvement of the accuracy of composition or improvement of the accuracy of impurity concentration

. . Securing steepness of the change of composition between films

. Prevention of autodope

. Making temperatures lower

. improving productivity e.g. improving apparatus operation rate or cost reduction

. . High-speed growth

. . power saving e.g. automatisation or facilitation of formation

BB11

BB12

BB13

BB14

BB15

BB16

BB17

BB18

BB19

BB20

. Prevention of distortion or warpage

. . improving crystallinity or lattice matching property; preventing crystal defects

. . preventing a slip-line or crack generation

. preventing contamination or reducing impurity concentration

. . preventing dust generation

. improving electric characteristics or avoiding film damage

. densifying film or improving adhesion

. . characterised by particle diameter or grain size

. improving step coverage

. improving safety or taking countermeasures against abnormalities

CA00
APPLICATIONS TO SEMICONDUCTOR ELEMENTS OR THE LIKE

CA01

CA02

CA03

CA05

CA06

CA07

CA09

CA10

. Bipolar transistors

. . HBT or hetero-bipolar transistors

. . . HET or hot electron transistors

. MIS transistors except TFT

. MES transistors

. HEMT or High Electron Mobility Transistor

. Light-emitting elements

. . LED or Light-Emitting Diodes

CA11

CA12

CA13

CA15

CA16

CA18

CA19

. . . for blue colour

. . Semiconductor laser

. Light-receiving elements e.g. solar cell

. TFT or Thin-Film Transistors

. Photoreceptor drums or electrophotographic photoreceptors

. Hall elements

. IMPATT diode or GUNN diode

CB00
FUNCTIONAL APPLICATIONS

CB01

CB02

CB04

CB05

CB06

CB07

CB10

. Active layer [Not assigned]

. Intermediate layer or buffer layer

. for final passivation

. Interlayer insulating layer

. for etching masks

. for diffusion sources

. for electrode wiring

DA00
STRUCTURE OF SEMICONDUCTOR GROWTH LAYERS

DA51

DA52

DA53

DA54

DA55

DA56

DA57

DA58

DA59

DA60

. characterised by the shape or structure of semiconductor growth layers

. . of multilayer growth layer

. . . having buffer layers intermediate layers or transition layers

. . . of superlattice including distorted superlattices or modulation-doped superlattices

. . . Quantum well

. . . Quantum wire or quantum box

. characterised by the composition of semiconductor growth layers

. . Composition having inclination or gradient

. . specifying impurity concentration which is claimed

. . . specifying the concentration of donor or acceptor which is claimed

DA61

DA62

DA63

DA64

DA65

DA66

DA67

DA68

DA69

DA70

. characterised by crystalline structure e.g. microcrystals columnar crystals or grain sizes

. characterised by the physical properties of semiconductor growth layers

. . characterised by band gap

. . characterised by refractive index

. . characterised by optical conductivity or dark conductivity

. . characterised by resistance value

. . characterised by crystal defect density etch pit density or surface roughness

. . characterised by hydrogen content and bonded hydrogen content

. . characterised by stress or compressive or tensile stress

. . characterised by density

DB00
SELECTIVE GROWTH OF SEMICONDUCTOR LAYERS

DB01

DB02

DB03

DB04

DB05

DB06

DB08

DB09

. Insulator mask

. . Growth exclusively to openings

. . Simultaneous growth of single crystals and amorphous and polycrystals

. . Selection of substrate orientation

. . forming buried epitaxial layer

. Mask other than insulators

. Separate mask

. Maskless growth

DC00
STRUCTURE OF INSULATOR GROWTH LAYERS OR SELECTIVE GROWTH OF INSULATOR LAYERS

DC51

DC52

DC53

DC55

DC56

DC57

. of two layers *

. of three layers *

. of four or more layers *

. characterised by composition

. . having gradients in composition

. . characterised by impurity concentration

DC61

DC62

DC63

DC64

DC65

DC66

DC68

DC69

DC70

. characterised by the physical properties of insulator growth layers

. . characterised by refractive index

. . characterised by dielectric constant

. . characterised by hydrogen content

. . characterised by the stress e.g. compressive or tensile stress

. . characterised by density

. Selective growth of insulator layers

. . Separate mask

. . Maskless growth

DP00
TYPE OF APPARATUS (1): FORM OF SUBSTRATE SUPPORTS OR MOTION OF SUBSTRATES DURING FILM FORMATION; ALL OF THE FORMS DESCRIBED IN DRAWINGS AND THE "DETAILED DESCRIPTION OF THE INVENTION" PART IS CLASSIFIED EXCEPT PRIOR ARTS.

DP01

DP02

DP03

DP04

DP05

DP07

DP09

. holding one single substrate in film forming chambers e.g. a sheet-by-sheet processing

. . holding substrates horizontally

. . . feeding material gases from above the substrates

. . . feeding material gases laterally from the substrates

. . . feeding material gases from below the substrates

. . holding substrates tiltingly

. . holding substrates vertically

DP11

DP13

DP14

DP15

DP16

DP18

DP19

DP20

. holding two substrates in a film forming chamber

. holding three or more substrates in a film forming chamber e.g. batch system

. . arranging substrates or substrate rows circularly

. . . arranging substrates on disc upper surfaces e.g. pancake-type

. . . arranging substrates on the side face of cylinder and cone e.g. barrel-type

. . arranging substrates linearly on straight line

. . . stacking substrates in the vertical direction by holding them horizontally

. . . arranging substrates in the horizontal direction by holding them vertically

DP21

DP22

DP23

DP25

DP27

DP28

. supplying substrates continuously into film forming chambers

. . using ribbon continuous substrates

. . continuous supplying substrates using belt conveyers or the like

. Film forming apparatus suitable to substrate forms other than plates e.g. cylinders

. Substrate moving e.g. revolution or reciprocation during film formation

. . Substrate turning or rotating around substrate centre point

DQ00
TYPE OF APPARATUS (2) : FORM OF FILM FORMING CHAMBERS; ALL OF THE FORM DESCRIBED IN DRAWINGS AND THE "DETAILED DESCRIPTION OF THE INVENTION" PART IS CLASSIFIED IN THIS PLACE EXCEPT PRIOR ARTS.

DQ01

DQ03

DQ04

DQ05

DQ06

DQ08

DQ10

. using sealed tubes

. Film forming chamber being tubular except sealed tubes

. . arranging reaction tubes longitudinally

. . . holding substrates and substrate support mechanisms from below

. . arranging reaction tubes sideways

. having material supply sources e.g. source ports in film forming chambers

. Film forming chamber not being tubular

DQ11

DQ12

DQ14

DQ15

DQ16

DQ17

. having partitions for separating gas flow in film forming chambers

. . Substrate moving in each gas flow area

. having a plurality of film forming chambers

. . arranging film forming chambers linearly

. . . Normal pressure CVD having dispersion heads

. . having common chambers communicating with a plurality of film forming chambers

EB00
FILM FORMATION IN GENERAL

EB01

EB02

EB03

EB05

EB06

EB08

EB09

EB10

. Film formation in general

. . Structure of film forming apparatuses e.g. arrangement of structural units in apparatuses

. . Materials of film forming apparatuses

. . Maintenance of film forming apparatuses

. . . cleaning film forming chambers or reaction tubes

. . Preparation chamber loading chamber carrying chamber or intermediate chamber

. . Gate valve

. . Sealing mechanism or air-tight seal maintaining method

EB11

EB12

EB13

EB14

EB15

EB17

EB19

EB20

. Film forming preparation work e.g. preliminary film formation on the inner walls of film forming chambers

. . Atmospheric air purging method or evacuating way for vacuum

. . cleaning or preheating substrate surfaces

. . . Cleaning by heating in vacuum e.g. thermal etching or preheating

. . . Cleaning by heating in gases or preheating

. Film formation finish work e.g. leak mechanism or method thereof

. Coating device

. . Spin coater

EC00
FILM FORMING CHAMBER, PIPING STRUCTURE, OR PIPING METHOD

EC01

EC02

EC03

EC05

EC07

EC08

EC09

EC10

. Shape or structure of film forming chambers

. . Multiple tube structure e.g. inner tubes or inserted tubes

. . Light transmission window

. characterised by the material of or the inner wall surface state of film forming chambers

. Piping structure piping system or piping method

. . characterised by piping length pipe diameter or material

. . Heating or cooling of piping

. . having piping system for dummy gases

EE00
GAS SUPPLY OR PRESSURE CONTROL

EE01

EE02

EE03

EE04

EE05

EE06

EE07

EE08

EE10

. Gas supplying mechanism

. . Cylinder evaporation mechanism or material supplying mechanism

. . . Bubbler

. . Mass flow meter valve or flow regulating mechanism

. . Gas mixer

. . activating gases outside the film forming chambers (plasmatising EH18.)

. . . using heat

. . . using light

. . Filter for gas supply system (exhausting system EG08)

EE11

EE12

EE13

EE14

EE15

EE17

EE18

EE19

EE20

. Gas supply method

. . characterised by the gas supply flow flow ratio or mixing ratio

. . characterised by the supply of gases other than film components e.g. etching gases or hydrogen

. . . characterised by the supplying mechanism or supplying method for inert gases

. . characterised by the supplying mechanism and supplying method for dopant gases

. . characterised by controlling the change of gas supply flow or the change of pressure

. . . characterised by the gas supply start or finish timing

. . . Pulsating gas feed or alternate feed

. . characterised by the way of gas flow or laminar flow whirling gas speed or the like

EF00
NOZZLE, RECTIFICATION, SHIELDING OR EXHAUSTING OPENING

EF01

EF02

EF03

EF04

EF05

EF07

EF08

EF09

EF10

. Shape or structure of nozzles

. . jetting gases from the tip of cylindrical members

. . having gas jet nozzles on the side of cylindrical members

. . . having nozzle being ring-shaped

. . having many gas jet holes or shower plate on the surface of plate members

. . having differences in the size of jet holes

. . provided with a plurality of nozzles

. . . controlling gas supply flow for every nozzle

. . variable in nozzle position

EF11

EF13

EF14

EF15

EF17

EF18

EF20

. Material of nozzles

. having rectifying members for varying gas flow in film forming chambers

. . having rectifying member being plate-shaped or conical or rectifying plates baffles or the like

. . having rectifying member being cylindrical or ring-shaped

. Gas shielding mechanism

. . having shutter mechanisms

. Position or structure of exhausting openings

EG00
EXHAUSTING, EXHAUSTING CONTROL, OR WASTE GAS TREATMENT

EG01

EG02

EG03

EG04

EG05

EG06

EG07

EG08

EG09

EG10

. characterised by the exhausting mechanism

. . Exhausting valve exhausting regulation valve or conductance regulating mechanism

. . characterised by the vacuum pump or combination of vacuum pumps

. . Mechanism for prevention of backflow or pump damage

. characterised by the exhausting method

. . Controlling exhausting speed or exhausting flow change

. Waste gas treating mechanism and waste gas treatment method

. . Trap dust filter or collection mechanism

. . Recycle use or reuse

. . Duct

EH00
PLASMA TREATMENT OR PLASMA CONTROL

EH01

EH02

EH03

EH04

EH05

EH06

EH07

EH08

EH09

EH10

. Plasma treatment mechanism or plasma generation mechanism

. . Antenna

. . Waveguide and dielectrics window

. . Shape or structure of electrodes

. . . Electrode combined with gas supply nozzles

. . . Intermediate electrode auxiliary electrode or shield

. . . with variable electrode positions

. . Material of electrodes

. . Direct current glow discharging plasma CVD apparatus

. . Arc discharging plasma CVD apparatus

EH11

EH12

EH13

EH14

EH15

EH16

EH17

EH18

EH19

EH20

. . Inductive coupled plasma CVD apparatus

. . Capacitive coupled plasma CVD system

. . . Parallel plane type

. . . . having parallel relation between substrate and electrode

. . . photoreceptor drum-typed

. . Plasma CVD apparatus using magnetic field

. . . ECR or electron cyclotron resonance plasma CVD apparatus

. . plasmatising gases outside the film forming chambers except mere ECR

. Controlling of plasma

. . setting electric potential e.g. setting bias or reversing polarity

EJ00
COOLING

EJ01

EJ02

EJ03

EJ04

EJ05

EJ06

EJ08

EJ09

EJ10

. Cooling mechanism or cooling method

. . cooling substrates

. . . having cooling mechanism built in susceptors e.g. holders or supports

. . cooling film forming chamber wall surfaces or reaction tubes

. . cooling electrodes

. . cooling heaters

. . without cooling fluids e.g. with Peltier elements

. . using liquids as a cooling fluid e.g. cold water

. . using gases as a cooling fluid e.g. gas

EK00
HEATING, E.G. IRRADIATION, OR TEMPERATURE CONTROL

EK01

EK02

EK03

EK05

EK06

EK07

EK08

EK09

EK10

. Heating or irradiation mechanism

. . heating by high-frequency induction

. . . heating susceptors by high- frequency induction heating methods

. . Resistance heating

. . . having resistance heating type heaters outside the film forming chambers

. . . having resistance heating type heaters inside the film forming chambers

. . . characterised by the shape structure or material of heaters

. . . . Ceramic heater e.g. heaters embedded in ceramics

. . using heating fluid

EK11

EK12

EK13

EK14

EK15

EK17

EK18

EK19

EK20

. . Lamp heating or light irradiation e.g. irradiation for optical excitation

. . . irradiating film forming planes e.g. substrate surfaces with light

. . . irradiating substrate rear surfaces with light

. . . irradiating substrate support members with light

. . . irradiating with light in parallel to film forming planes

. . . Light being laser beams

. . . characterised by the light wavelength e.g. microwaves

. . . . Wavelength being shorter than visible light e.g. ultraviolet light or radiation light

. . Molecular beam cluster beam electron beam or ion beam irradiations

EK21

EK22

EK23

EK24

EK25

EK26

EK27

EK28

EK29

EK30

. . Soaking mechanism

. . . Divided heater or a plurality of heaters

. . . with variable position of heating mechanisms

. . Insulating mechanism or isolation of heaters

. Heating method

. . characterised by the film forming temperature

. . characterised by control of change of heating energy quantity or change of temperature

. . . characterised by timing of start or finish of temperature change

. . . pulsatingly heating e.g. irradiating

. . characterised by the spatial temperature e.g. irradiation distribution

EM00
SUBSTRATE SUPPORTS

EM01

EM02

EM03

EM04

EM05

EM06

EM07

EM08

EM09

EM10

. characterised by the substrate support mechanism or substrate support method

. . Structure of susceptors

. . . fixing mechanically e.g. by means of fixing pieces or rings

. . . Vacuum chuck

. . . Electrostatic chuck

. . . lifting substrates e.g. by spacers

. . . supplying gases onto substrate rear surfaces or the ends

. . Structure of wafer boats

. Material or surface state of substrate support mechanism e.g. susceptors or wafer boats

. Mechanism giving vertical movement rotation or vibration to substrates or substrate support mechanisms

EN00
CARRYING INLET AND OUTLET, COVER, CARRYING, OR CARRYING-IN AND -OUT

EN01

EN02

EN04

EN05

EN06

EN08

EN10

. Structure of carrying inlets and outlets or structure of covers

. . preventing absorption of atmosphere

. Carrying and carrying-in and -out of wafers

. Carrying and carrying-in and -out of wafers and carriers e.g. wafer boats

. detecting wafers or aligning wafers

. carrying replacing members e.g. replacing reactor tubes

. carrying other articles

GB00
MEASUREMENT, CONTROL BASED ON THE MEASUREMENT RESULTS, OR CONTROL IN GENERAL

GB01

GB02

GB04

GB05

GB06

GB07

GB08

GB09

GB10

. Measurement before film formation or setting of film forming conditions based on measurement results

. . Evaluation adjustment or inspection e.g. leak checking of film forming apparatus

. Measurement during film formation or control based on measurement results

. . measuring temperature

. . measuring pressure

. . measuring gas concentration

. . measuring the state of plasma

. . measuring film thickness

. . measuring the physical properties of films

GB11

GB12

GB13

GB15

GB16

GB17

GB19

GB20

. Measurement after film formation or control based on measurement results

. . measuring electric characteristics

. . measuring film thickness

. characterised by control in general control device or indication

. . using database

. . using numerical calculation e.g. simulation

. characterised by the film forming speed

. . changing film forming speed during film formation

GH00
COMBINATION WITH MACHINING PROCESS

GH01

GH02

GH03

GH05

GH06

GH08

GH09

GH10

. Preliminary treatment by machining or performed before film formation

. . Polishing

. . . Chemical mechanical polishing e.g. CMP

. Machining or polishing between film forming processes

. . Chemical mechanical polishing e.g. CMP

. After-treatment by machining e.g. a treatment performed after film formation

. . Polishing

. . . Chemical mechanical polishing e.g. CMP

HA00
COMBINATION WITH OTHER PROCESSES

HA01

HA02

HA03

HA04

HA05

HA06

HA07

HA08

HA09

HA10

. Preliminary treatment e.g. a treatment performed before film formation

. . Etching

. . . Dry etching

. . . Wet etching

. . Ion implantation

. . Heat treatment e.g. anneal

. . Beam anneal

. . . Light beam e.g. laser beam or the like

. . . Electron beam

. . Impurity diffusion

HA11

HA12

HA13

HA14

HA15

HA16

HA17

HA18

HA19

HA20

. After-treatment e.g. a treatment performed after film formation

. . Etching

. . . Dry etching

. . . Wet etching

. . Ion implantation

. . Heat treatment e.g. anneal

. . Beam anneal

. . . Light beam e.g. laser beam

. . . Electron beam

. . Impurity diffusion

HA21

HA22

HA23

HA24

HA25

. Continuous treatment except etching treatment steps

. . Continuous treatment in one single chamber

. . . combined with step other than film formation steps

. . Continuous treatment in multiple chambers

. . . combined with steps other than film formation steps

5F045	Vapor-phase growth (i.e., excluding metal layers)
	H01L21/205 ;21/31-21/31@Z;21/365;21/469;21/86