Japanese
close

FI (list display)

  • H10K30/00
    		•  Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation (integrated devices or assemblies of multiple devices H10K 39/00, H10K 65/00; electrolytic light-sensitive devices H01G 9/20) [2023.01]
    		HB CC 5F251
  • H10K30/10
    		•  .comprising heterojunctions between organic semiconductors and inorganic semiconductors [2023.01] HB CC 5F188
  • H10K30/15
    		•  .. Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 (photo-electrochemical devices comprising a liquid electrolyte or a solid electrolyte H01G 9/20) [2023.01] HB CC 5F188
  • H10K30/20
    		•  .comprising organic-organic junctions, e.g. donoracceptor junctions [2023.01] HB CC 5F188
  • H10K30/30
    		•  .comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains [2023.01] HB CC 5F188
  • H10K30/35
    		•  .. comprising inorganic nanostructures, e.g. CdSe nanoparticles [2023.01] HB CC 5F188
  • H10K30/40
    		•  .comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers [2023.01] HB CC 5F188
  • H10K30/50
    		•  .Photovoltaic [PV] devices [2023.01] HB CC 5F251
  • H10K30/53
    		•  .. in the form of fibres or tubes, e.g. photovoltaic fibres [2023.01] HB CC 5F251
  • H10K30/57
    		•  .. comprising multiple junctions, e.g. tandem PV cells [2023.01] HB CC 5F251
  • H10K30/60
    		•  .in which radiation controls flow of current through the devices, e.g. photoresistors [2023.01] HB CC 5F149
  • H10K30/65
    		•  .. Light-sensitive field-effect devices, e.g. phototransistors [2023.01] HB CC 5F149
  • H10K30/80
    		•  .Constructional details [2023.01] HB CC 5F188
  • H10K30/81
    		•  .. Electrodes [2023.01] HB CC 5F188
  • H10K30/82
    		•  ... Transparent electrodes, e.g. indium tin oxide [ITO] electrodes [2023.01] HB CC 5F188
  • H10K30/83
    		•  .... comprising arrangements for extracting the current from the cell, e.g. metal finger grid systems to reduce the serial resistance of transparent electrodes [2023.01] HB CC 5F188
  • H10K30/84
    		•  .. Layers having high charge carrier mobility [2023.01] HB CC 5F188
  • H10K30/85
    		•  ... Layers having high electron mobility, e.g. electron-transporting layers or hole-blocking layers [2023.01] HB CC 5F188
  • H10K30/86
    		•  ... Layers having high hole mobility, e.g. holetransporting layers or electron-blocking layers [2023.01] HB CC 5F188
  • H10K30/87
    		•  .. Light-trapping means [2023.01] HB CC 5F188
  • H10K30/88
    		•  .. Passivation; Containers; Encapsulations [2023.01] HB CC 5F188
  • H10K30/89
    		•  .. Terminals, e.g. bond pads [2023.01] HB CC 5F188
    TOP