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This page displays all 「FI」 in main group H01L33/00. |
HB:Handbook | ||||
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CC:Concordance | |||||
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Semiconductor devices having potential barriers? specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (H10K 50/00 takes precedence; devices consisting of a plurality of semiconductor components formed in or on a common substrate and including semiconductor components having potential barriers?, specially adapted for light emission H01L 27/15; semiconductor lasers H01S 5/00)[2010.01] | HB | CC | 5F241 | |
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Finished product mounting | HB | CC | 5F142 | |
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Drive circuits | HB | CC | 5F241 | |
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Testing and measuring | HB | CC | 5F241 | |
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Devices for reference [finished products which use luminescent devices] | HB | CC | 5F142 | |
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Others | HB | CC | 5F241 | |
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.characterised by the semiconductor bodies [2010.01] | HB | CC | 5F241 | |
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..with a quantum effect structure or superlattice, e.g. tunnel junction [2010.01] | HB | CC | 5F241 | |
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...within the light emitting region, e.g. quantum confinement structure or tunnel barrier [2010.01] | HB | CC | 5F241 | |
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..with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body(H01L27/15 takes precedence) [2010.01] | HB | CC | 5F241 | |
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..with a light reflecting structure, e.g. semiconductor Bragg reflector [2010.01] | HB | CC | 5F241 | |
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..with a stress relaxation structure, e.g. buffer layer [2010.01] | HB | CC | 5F241 | |
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..with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure [2010.01] | HB | CC | 5F241 | |
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..with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous [2010.01] | HB | CC | 5F241 | |
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...in light emitting region [2010.01] | HB | CC | 5F241 | |
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..with a particular shape, e.g. curved or truncated substrate [2010.01] | HB | CC | 5F241 | |
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...Roughened surfaces, e.g. at the interface between epitaxial layers [2010.01] | HB | CC | 5F241 | |
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...of the light emitting region, e.g. non-planar junction [2010.01] | HB | CC | 5F241 | |
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..Materials of the light emitting region [2010.01] | HB | CC | 5F241 | |
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...containing only elements of Group II and Group VI of the Periodic Table?[2010.01] | HB | CC | 5F241 | |
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...containing only elements of Group III and Group V of the Periodic Table?[2010.01] | HB | CC | 5F241 | |
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....containing nitrogen [2010.01] | HB | CC | 5F241 | |
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...containing only elements of Group IV of the Periodic Table?[2010.01] | HB | CC | 5F241 | |
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.characterised by the electrodes [2010.01] | HB | CC | 5F241 | |
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..with a particular shape [2010.01] | HB | CC | 5F241 | |
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..Materials therefor [2010.01] | HB | CC | 5F241 | |
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...Transparent materials [2010.01] | HB | CC | 5F241 | |
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.characterised by the coatings, e.g. passivation layer or anti-reflective coating [2010.01] | HB | CC | 5F241 | |
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..Reflective coating, e.g. dielectric Bragg reflector [2010.01] | HB | CC | 5F241 | |
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.characterised by packages of semiconductor device bodies [2010.01] | HB | CC | 5F142 | |
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..Wavelength conversion elements [2010.01] | HB | CC | 5F142 | |
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..Encapsulations [2010.01] | HB | CC | 5F142 | |
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...having a particular shape [2010.01] | HB | CC | 5F142 | |
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...Materials, e.g. epoxy or silicone resin [2010.01] | HB | CC | 5F142 | |
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..Optical field-shaping elements [2010.01] | HB | CC | 5F142 | |
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...Reflective elements [2010.01] | HB | CC | 5F142 | |
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..Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls [2010.01] | HB | CC | 5F142 | |
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..Heat extraction or cooling elements [2010.01] | HB | CC | 5F142 | |