F-Term-List

(Not Translated)
5C101 CHARGED PARTICLE BEAM DEVICES
H01J37/00 -37/36
H01J37/00-37/36 AA AA00
DEVICE TYPES
AA01 AA02 AA03 AA04 AA05 AA06 AA07
. Microscope devices . . Types . . . Scanning type . . . Transmission type . . . Scanning transmission type . . . Reflection type . . . Ion microscopes
AA12 AA13 AA14 AA15 AA16
. . Observation method . . . Bright-field methods . . . Dark-field methods . . . Phase-difference methods, Phase-contrast methods . . . Electron diffraction methods
AA21 AA22 AA23 AA25 AA27
. Analyzers . . Elemental analysis . . Energy analysis . Ion implantation devices . Exposure devices
AA31 AA32 AA33 AA34 AA35 AA36 AA37 AA39
. Processing devices . . By focused ion beams . . By projection type beams . . Ion milling . . 3D modeling . . Film formation . . With a microscope . Other charged particle beam devices
BB BB00
OBJECTS
BB01 BB02 BB03 BB04 BB05 BB06 BB07 BB08 BB09 BB10
. Vacuum improvement, cleanup, contamination prevention . Abnormal electrical discharge prevention . Time reduction, speed-up . Measures against distortion, vibration, or expansion of devices . Maintainability improvement . Operation simplification . Space saving . Shielding . Cost reduction, power saving . Measures for space-charge effect or blow-up
BB11
. With high SN
CC CC00
CHAMBERS, EXHAUST MECHANISMS
CC01 CC02 CC04 CC05 CC06
. Irradiation chambers . Attachment chambers . Exhaust means . . Differential evacuation . . Local vacuum
CC11 CC12 CC13 CC14 CC15 CC17 CC19
. Vacuum components . . Vacuum seals . . Bellows . . Valves, opening and closing mechanisms . . Caps, introduction parts, feedthroughs . Means for introducing gases into a chamber . Attachment optical microscopes
DD DD00
ION SOURCES, ELECTRON SOURCES
DD01 DD02 DD03 DD04 DD05 DD06 DD07 DD08 DD09
. Types . . Field ionization ion sources . . Plasma discharge type ion sources . . Gas cluster ion sources . . Photoelectric emission type electron sources . . Field emission type electron sources . . Schottky type, thermal field emission type electron sources . . Thermionic electron emission type electron sources . . Other ion sources and electron sources
DD11 DD12 DD13 DD14 DD15 DD16 DD17 DD18 DD19 DD20
. Constructional members . . Emitter units (including electron sources for plasma generation) . . . Emitters themselves . . . . Specific materials, crystal faces, crystal axes . . . . Manufacturing, conditioning . . . Peripheral members . . . Cooling mechanisms . . . Heating mechanisms . . Light sources and optical systems for excitation . . Raw material supply systems
DD22 DD23 DD24 DD25 DD26 DD27 DD28 DD29 DD30
. . Arc chambers . . Electron source chambers, ion source chambers . . . Pressure holding mechanisms . . Electrodes . . Insulators . . Magnetic field generators . . Moving parts . . Openings for ribbon beam generation . . Voltage and current application circuits
DD31 DD33 DD34 DD36 DD38 DD40
. Raw materials . Emitted ionic species . . Negative ions . Particle species change . Beam control . Replacement of members
EE EE00
BEAM OPTICAL SYSTEMS, TRANSPORTATION SYSTEMS, ACCELERATION SYSTEMS
EE01 EE02 EE03 EE04 EE05 EE06 EE08
. Types, functions . . Beam shaping, dividing, stopping down . . . Multi-beam generation . . . Apertures . . . Phase plates . . . Beam shaping . . Aberration correction
EE12 EE13 EE14 EE15 EE16 EE17 EE19
. . Beam focusing, beam divergence . . . Irradiation optical systems . . . Objective lenses . . . Image forming optical systems . . . Beam divergence . . . Electrostatic lenses . . Beam parallelization
EE22 EE23 EE25 EE26 EE27 EE28 EE30
. . Beam deflection . . . For blankers . . Beam acceleration or deceleration, energy control . . . Electrodes just before an irradiated target (retarding electrodes) . . . Electrodes in an objective lens (booster electrodes) . . . Accelerators . . Beam neutralization
EE32 EE33 EE34 EE35 EE36 EE37 EE38 EE40
. . Beam separation, selection, blocking . . . Separation of primary and secondary beams . . . Energy separation . . . Mass separation . . . Beam cutoff . . . Exposure masks, processing masks . . . ExB filters . . Others
EE41 EE42 EE43 EE44 EE45 EE46 EE47 EE48 EE49
. Controlled parameters . . Beam sizes, beam density distributions . . Beam current amounts . . Beam energy, implantation depths . . Beam angle, beam angle distribution . . Magnification or reduction ratio . . Focusing, divergence . . Scan trajectory, scan range, scan direction . . Scanning speeds, frequencies
EE51 EE53 EE55 EE57 EE59
. With control of secondary beams . Feedback control . Control according to irradiated targets . Potential distribution, electric fields, magnetic fields . Positions of optical feature points
EE61 EE62 EE63 EE64 EE65 EE66 EE67 EE68 EE69 EE70
. Constructional members . . Electric field or magnetic field applying members . . . Coils . . . Yokes, magnetic poles . . . Electrodes . . . Insulators . . . Multipole structures . . Voltage or current application circuits . . Slits, apertures . . . Passage hole shapes
EE72 EE73 EE74 EE75 EE76 EE78 EE80
. . Lens tubes, beam transportation tubes . . . Multiple lens tubes . . . Inverted lens tubes . . Moving members . . Support members . Combination or arrangement of electron optics members . Beam line shapes
FF FF00
IRRADIATED TARGETS, PLACING AND MOVING MEMBERS THEREOF
FF01 FF02 FF03 FF04 FF05 FF06 FF09
. Irradiated targets . . Semiconductors . . Living organisms . . Standard samples, reference samples . . Liquids, gels . . High-aspect-ratio structures (level differences, holes, irregularities, and the like) . Arrangement process of irradiated targets
FF11 FF12 FF13 FF14 FF15 FF16 FF17 FF18 FF19 FF20
. Processing applied to irradiated targets . . Before beam irradiation . . During beam irradiation . . After beam irradiation . . Voltage application, current application . . Heating, cooling . . Irradiation of light (including IR and UV) or radioactive rays . . Compression or tension . . Gas or fluid irradiation . . Air pressure atmosphere
FF22 FF23 FF24 FF25 FF26 FF27
. . Processing . . . Slicing . . Directing toward specific crystal orientations . . Charging, discharging . . Embedding, film formation . . Markers, marker giving
FF31 FF32 FF34 FF36
. Irradiated target transfer means (manipulators and the like) . Taking-in to the inside or taking-out to the outside of an irradiation chamber . Masks for processing or observation . Sample protection members
FF41 FF42 FF43 FF44 FF45 FF46 FF47 FF48 FF49 FF50
. Members on which irradiated targets are placed . . Replaceable type . . Side entry type . . Top entry type . . Multiple irradiated targets arrangement . . Shapes of placement members for irradiated targets . . Grids . . Attachment of alignment marks or reference marks . . Fixation mechanisms . . . Deposition
FF52 FF53 FF54 FF55 FF56 FF57 FF58 FF59 FF60
. . Reciprocating motion, mechanical scan . . Moving mechanisms or turning mechanisms . . . Movement exceeding an irradiation chamber . . . Movement between a plurality of charged particle devices . . . Parallel movement . . . . Z direction . . . Tilt mechanisms . . . Rotation mechanisms . . . Multi-spindle rotation
GG GG00
DETECTION MEANS
GG01 GG02 GG03 GG04 GG05 GG06 GG07 GG08 GG09 GG10
. Detection targets . . Information from an irradiated target . . . Electrons . . . . Secondary electrons . . . . Reflection electrons (backscattered electrons) . . . . Auger electrons . . . Electromagnetic waves . . . . Cathodoluminescence . . . . X-rays . . . . Optical images
GG13 GG15 GG16 GG18 GG19 GG20
. . . Ions . . Primary beams . . Sample absorption current . . Others . . . Detection of stage positions, angles, and states . . . Member monitoring
GG21 GG22 GG23 GG24 GG25 GG26 GG28
. Physical quantities of a detection target . . Temperature . . Pressure, vacuum degree . . Processing amounts (sputter, implantation dose, and the like) . . Electric variables (resistance, impedance, and the like) . . Vibration, distortion . Cooperative operation with other detectors
GG31 GG32 GG33 GG34 GG35 GG36 GG37
. Detector types . . MCPs, die nodes, electron-multiplier tubes . . Faraday cups . . Scintillation detectors (emission units, light guiding units, photoelectric conversion units) . . Fluorescent plates, photographic plate systems . . Semiconductor direct detectors . . Arrays, pixel type, variance type
GG41 GG42 GG44 GG46 GG49
. Detector auxiliary members (cooling means and the like) . . Masks, filters, and collimators for measurement . Moving mechanisms . Built-in in a sample table . Circuits for detectors
HH HH00
PROCESSING OF OBTAINED DATA
HH01 HH02 HH03 HH04 HH05 HH06
. Beam physical quantity output . . Beam angle, beam angle distribution, parallelism . . Beam positions . . Beam divergence, size, density distribution . . Beam current, fluence, implantation volume . . Beam energy, speed, implantation depth
HH11 HH13 HH15 HH16 HH17 HH19
. Defect detection of an irradiated target . Charging-state output of an irradiated target . Dimension output of an irradiated target . . Three dimensional sizes, beam axial direction sizes . . Pattern length measurement . Surface state output of irradiated targets
HH21 HH22 HH23 HH24 HH25 HH26 HH27 HH28
. Cooperation with an optical system . Extraction of shapes or edges of irradiated targets . Processing for positioning of a beam or an irradiated target . Superposition with other detected data, positioning . Comparison with other detected data . Gain, offset adjustment . Map creation . Timing of performing processing
HH31 HH32 HH33 HH34 HH35 HH36 HH37 HH38 HH39 HH40
. Image processing . . Thinning, interpolation, reduction, expansion . . Connection, division . . Superposition . . . Average, integration . . Extraction of specific pixels or patterns . . Three-dimensional image formulation . . Shading ratios, luminance evaluation or adjustment . . Sharpness evaluation, adjustment . . Alignment or pattern matching between images
HH42 HH43 HH44 HH46 HH47 HH48 HH49 HH50
. . Image shift processing, detection . . Differentiation, difference . . Fourier transformation, space frequencies . Device assessment . . Aberration assessment . . Focus assessment . . Detector assessment . . Abnormality assessment
HH51 HH52 HH53 HH54 HH55 HH56 HH58
. Analysis methods, operation methods . . Matrix operation . . Approximate processing . . Convolution . . Coordinate transformation . . Operation using transfer functions . Under sampling (compressed sensing)
HH61 HH62 HH63 HH64 HH65 HH66 HH68
. Correction, amendment . . Charging correction . . Correction of detector factors . . Aberration correction . . Vibration component removal . . Noise removal . Processing circuits
JJ JJ00
TOTAL CONTROL PROCESSING
JJ01 JJ02 JJ03 JJ04 JJ05 JJ06 JJ07 JJ08 JJ09 JJ10
. Coordination of observation and processing . Calculation of observation or processing parameters . Simulation of observed images or processing . Learning . IoT . Stored contents . Database utilization . Data transmission . Remote control, coordination with exterior equipment . Triggering processing
JJ11 JJ12
. Data compression . Other control
KK KK00
INPUT-OUTPUT DEVICES
KK01 KK02 KK03 KK04 KK05 KK06 KK07 KK08 KK09
. Observed image output . . Three-dimensional distribution and shape output . . Moving image output . Input-output related to beams or optical systems . Input-output related to lens tubes or chamber interior . Input-output related to detectors or detection processing . . Area of interest setting . Input-output related to operation of irradiated targets . Warning output
KK11 KK12 KK13 KK14 KK15 KK16 KK17 KK18 KK19
. Processing at the time of display change . Selection of displayed parameters . Graph indication of parameters . Arrangement of a plurality of display or operation objects . . Side-by-side arrangement . . . Low magnification images and high magnification images . . Overlapped arrangement . Additional display . GUIs
LL LL00
OTHERS
LL01 LL02 LL04 LL05 LL06 LL07
. Design . . Beam line . Manufacturing methods . Calibration . Equipment management, evaluation methods . Installation, environments
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