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  • G11C16/00
    		•  Erasable programmable read-only memories(G11C14/00 takes precedence) [5] HB CC 5B225
  • G11C16/02
    		•  .electrically programmable [5] HB CC 5B225
  • G11C16/04
    		•  ..using threshold-variable transistors, e.g. FAMOS [5] HB CC 5B225
  • G11C16/04,100
    		•  ...comprising cells containing floating gate transistors (G11C 16/04, 170, G11C 16/04, 180 take precedence) HB CC 5B225
  • G11C16/04,110
    		•  ....comprising cells containing a single floating gate transistor and no selection transistor, e.g. UV EPROM HB CC 5B225
  • G11C16/04,120
    		•  ....comprising cells containing a merged floating gate and selection transistor HB CC 5B225
  • G11C16/04,130
    		•  ....comprising cells containing a single floating gate transistor and one separate selection transistors or more HB CC 5B225
  • G11C16/04,140
    		•  ....comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors connected to multiple floating gates HB CC 5B225
  • G11C16/04,143
    		•  .....Floating gate memory cells with both P and N channel memory transistors, usually sharing a common floating gate HB CC 5B225
  • G11C16/04,146
    		•  .....comprising plural independent floating gates which store independent data (for storage of more than two stable states at a single floating gate G11C11/56) HB CC 5B225
  • G11C16/04,150
    		•  ...comprising cells accumulating charges in an insulation layer, e.g. MNOS, SNOS (G11C 16/04, 170, G11C 16/04, 180 take precedence) HB CC 5B225
  • G11C16/04,160
    		•  ....comprising plural independent storage sites which store independent data (for storage of two or more stable states at a single storage site G11C11/56) HB CC 5B225
  • G11C16/04,170
    		•  ...comprising cells having several storage transistors connected in series HB CC 5B225
  • G11C16/04,180
    		•  ...Virtual ground arrays HB CC 5B225
  • G11C16/06
    		•  ..Auxiliary circuits, e.g. for writing into memory [2006.01] HB CC 5B225
  • G11C16/08
    		•  ...Address circuits; Decoders; Word-line control circuits [7] HB CC 5B225
  • G11C16/08,100
    		•  ....Column decoders HB CC 5B225
  • G11C16/08,110
    		•  ....Word line selection; Decoders HB CC 5B225
  • G11C16/08,120
    		•  .....Word line driving circuits; Specially for supplying reading voltage to word lines HB CC 5B225
  • G11C16/08,123
    		•  .....Word line driving circuits; Specially for verifying reading HB CC 5B225
  • G11C16/08,130
    		•  .....Word line driving circuits; Specially for supplying writing voltage to word lines HB CC 5B225
  • G11C16/08,140
    		•  .....Word line driving circuits; Specially for supplying deletion voltage to word lines HB CC 5B225
  • G11C16/10
    		•  ...Programming or data input circuits [7] HB CC 5B225
  • G11C16/10,100
    		•  ....External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators HB CC 5B225
  • G11C16/10,103
    		•  .....Circuits or methods for updating contents of nonvolatile memory, specially with 'security' features to ensure reliable replacement, e.g. preventing loss of old data before new data is reliably written HB CC 5B225
  • G11C16/10,110
    		•  ....Programming all cells in an array, sector or block to the same state prior to deletion HB CC 5B225
  • G11C16/10,120
    		•  ....comparing data with the data prior to writing HB CC 5B225
  • G11C16/10,130
    		•  ....performing reverse write/typical write HB CC 5B225
  • G11C16/10,140
    		•  ....controlling write time/write voltage/write currents HB CC 5B225
  • G11C16/10,143
    		•  ....characterised by source line control HB CC 5B225
  • G11C16/10,150
    		•  ....program in a special mode HB CC 5B225
  • G11C16/10,160
    		•  ....writing with buffer memory HB CC 5B225
  • G11C16/10,170
    		•  ....Data input circuits HB CC 5B225
  • G11C16/12
    		•  ....Programming voltage switching circuits [7] HB CC 5B225
  • G11C16/14
    		•  ....Circuits for erasing electrically, e.g. erase voltage switching circuits [7] HB CC 5B225
  • G11C16/14,100
    		•  .....Delete time/delete voltage control HB CC 5B225
  • G11C16/14,110
    		•  .....characterised by source line control HB CC 5B225
  • G11C16/16
    		•  .....for erasing blocks, e.g. arrays, words, groups [7] HB CC 5B225
  • G11C16/18
    		•  ....Circuits for erasing optically [7] HB CC 5B225
  • G11C16/20
    		•  ....Initializing; Data preset; Chip identification [7] HB CC 5B225
  • G11C16/22
    		•  ...Safety or protection circuits preventing unauthorized or accidental access to memory cells [7] HB CC 5B225
  • G11C16/22,100
    		•  ....Preventing deletion, programming or reading when power supply voltages are outside the required ranges HB CC 5B225
  • G11C16/24
    		•  ...Bit-line control circuits [7] HB CC 5B225
  • G11C16/24,100
    		•  ....related to the selection of bit lines HB CC 5B225
  • G11C16/24,110
    		•  ....Precharge/discharge circuits HB CC 5B225
  • G11C16/24,120
    		•  ....Write voltage generation circuits HB CC 5B225
  • G11C16/24,130
    		•  ....Latch circuits HB CC 5B225
  • G11C16/26
    		•  ...Sensing or reading circuits; Data output circuits [7] HB CC 5B225
  • G11C16/26,100
    		•  ....reading in a special mode HB CC 5B225
  • G11C16/26,110
    		•  ....reading through buffer memory HB CC 5B225
  • G11C16/26,120
    		•  ....Current comparison type sensing circuits HB CC 5B225
  • G11C16/26,130
    		•  ....characterised by source line control HB CC 5B225
  • G11C16/26,140
    		•  ....Output circuits HB CC 5B225
  • G11C16/28
    		•  ....using differential sensing or reference cells, e.g. dummy cells [7] HB CC 5B225
  • G11C16/30
    		•  ...Power supply circuits [7] HB CC 5B225
  • G11C16/30,100
    		•  ....High voltage generation circuits HB CC 5B225
  • G11C16/30,110
    		•  ....Negative voltage generation circuits HB CC 5B225
  • G11C16/30,120
    		•  ....Voltage adjustment circuits HB CC 5B225
  • G11C16/32
    		•  ...Timing circuits [7] HB CC 5B225
  • G11C16/34
    		•  ...Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention [7] HB CC 5B225
  • G11C16/34,100
    		•  ....Convergence or correction of memory cell threshold voltages; Repair or recovery of overdeleted or excessively written cells HB CC 5B225
  • G11C16/34,103
    		•  .....Circuits or methods to recover overdeleted nonvolatile memory cells detected during deletion verification, usually by means of a "soft" programming step HB CC 5B225
  • G11C16/34,106
    		•  .....Circuits or methods to recover excessively written nonvolatile memory cells detected during writing verification, usually by means of a "soft" deletion step HB CC 5B225
  • G11C16/34,110
    		•  ....Disturbance prevention or evaluation; Refreshing of disturbed memory data HB CC 5B225
  • G11C16/34,113
    		•  .....Circuits or methods to evaluate read or write disturbance in nonvolatile memory cells, without steps for mitigating disturbance HB CC 5B225
  • G11C16/34,116
    		•  .....Circuits or methods to prevent or mitigate disturbance of the state of a memory cell when neighbouring cells are read or written HB CC 5B225
  • G11C16/34,120
    		•  .....Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still are read as written state but with threshold less than the write verify threshold or read as deleted state but with threshold greater than the deletion verification threshold, and to reverse the disturbance via a refreshing writing or deleting step HB CC 5B225
  • G11C16/34,123
    		•  ....Arrangements for verifying correct writing or deletion HB CC 5B225
  • G11C16/34,126
    		•  .....Arrangements for verifying correct deletion or for detecting overdeleted cells HB CC 5B225
  • G11C16/34,130
    		•  ......Circuits or methods to verify correct deletion of nonvolatile memory cells HB CC 5B225
  • G11C16/34,133
    		•  ......Circuits or methods to detect overdeleted nonvolatile memory cells, usually during deletion verification HB CC 5B225
  • G11C16/34,136
    		•  .....Arrangements for verifying correct writing or for detecting excessively written cells HB CC 5B225
  • G11C16/34,140
    		•  ......Circuits or methods to verify correct writing of nonvolatile memory cells HB CC 5B225
  • G11C16/34,143
    		•  ......Circuits or methods to detect excessively written nonvolatile memory cells, usually during writing verification HB CC 5B225
  • G11C16/34,146
    		•  .....Prevention of overdeletion or excessive writing, e.g. by verifying whilst deleting or writing HB CC 5B225
  • G11C16/34,150
    		•  ......Circuits or methods to verify correct deletion of nonvolatile memory cells whilst deletion is in progress, e.g. by detecting onset or cessation of current flow in cells and using the detection output to terminate deletion HB CC 5B225
  • G11C16/34,153
    		•  ......Circuits or methods to prevent overdeletion of nonvolatile memory cells, e.g. by detecting onset or cessation of current flow in cells and using the detection output to terminate deletion HB CC 5B225
  • G11C16/34,156
    		•  ......Circuits or methods to verify correct writing of nonvolatile memory cells whilst writing is in progress, e.g. by detecting onset or cessation of current flow in cells and using the detection output to terminate writing HB CC 5B225
  • G11C16/34,160
    		•  ......Circuits or methods to prevent excessive writing, e.g. by detecting onset or cessation of current flow in cells and using the detection output to terminate writing HB CC 5B225
  • G11C16/34,163
    		•  ....Arrangements for evaluating degradation, retention or wearout, e.g. by counting deletion cycles HB CC 5B225
  • G11C16/34,166
    		•  .....Circuits or methods to detect or delay wearout of nonvolatile EPROM or EEPROM memory devices, e.g. by counting numbers of deletion or update cycles, by using multiple memory areas serially or cyclically HB CC 5B225
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