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  • G01L9/00
    		•  Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means (measuring differences of two or more pressure values G01L 13/00; measuring two or more pressure values simultaneously G01L 15/00) HB CC 2F055
  • G01L9/00@A
    		•  Using of surface acoustic waves HB CC 2F055
  • G01L9/00@B
    		•  Detecting displacements by optical means HB CC 2F055
  • G01L9/00@C
    		•  Using of vibrations HB CC 2F055
  • G01L9/00@D
    		•  Using of switches HB CC 2F055
  • G01L9/00@E
    		•  Related to circuits HB CC 2F055
  • G01L9/00@Z
    		•  Others HB CC 2F055
  • G01L9/00,301
    		•  .by use of semiconductors as pressure sensitive elements (303 to 309 take precedence) HB CC 2F055
  • G01L9/00,301@A
    		•  Manufacrturing methods for non-senseing type elements HB CC 2F055
  • G01L9/00,301@G
    		•  Strutures for mounting pressure sensor chips to substrates HB CC 2F055
  • G01L9/00,301@H
    		•  .Shapes of fixing portions HB CC 2F055
  • G01L9/00,301@J
    		•  .Leads, patterns HB CC 2F055
  • G01L9/00,301@Z
    		•  Others HB CC 2F055
  • G01L9/00,303
    		•  ..Semiconductor substrates having resistive layers on them HB CC 2F055
  • G01L9/00,303@A
    		•  Structures of elements HB CC 2F055
  • G01L9/00,303@B
    		•  .Shapes of diaphragms HB CC 2F055
  • G01L9/00,303@C
    		•  ..characterized by cross sectional shapes of strained portions HB CC 2F055
  • G01L9/00,303@D
    		•  ..characterized by planar shpapes of strained portions HB CC 2F055
  • G01L9/00,303@E
    		•  .Arrangement of piezoresistances, e.g. relationship with crystal plane HB CC 2F055
  • G01L9/00,303@F
    		•  .Manufacturing methods for elements HB CC 2F055
  • G01L9/00,303@G
    		•  ..Junction of two or more semiconductor substrates HB CC 2F055
  • G01L9/00,303@H
    		•  ..Formation of circuits, e.g. electrodes HB CC 2F055
  • G01L9/00,303@J
    		•  Element support, fixing and connecting structures HB CC 2F055
  • G01L9/00,303@K
    		•  .Structures for joint between elements and fixing members (e.g. pedestals, stems) HB CC 2F055
  • G01L9/00,303@L
    		•  ..Countermeasures against thermal stress HB CC 2F055
  • G01L9/00,303@M
    		•  .Electrical connection structures (e.g. arrangement of leads) HB CC 2F055
  • G01L9/00,303@N
    		•  .Structrues for connection with pressure lead-in HB CC 2F055
  • G01L9/00,303@P
    		•  .Housing structrues HB CC 2F055
  • G01L9/00,303@Q
    		•  Other supplementary portions (e.g. shield structures) HB CC 2F055
  • G01L9/00,303@S
    		•  Measuring circuits HB CC 2F055
  • G01L9/00,303@T
    		•  .for compensation HB CC 2F055
  • G01L9/00,303@U
    		•  .Failure, diagnostic circuits HB CC 2F055
  • G01L9/00,303@Z
    		•  Others HB CC 2F055
  • G01L9/00,305
    		•  ..by use of change in capacitance HB CC 2F055
  • G01L9/00,305@A
    		•  Element structures HB CC 2F055
  • G01L9/00,305@B
    		•  .related to manufacturing methods HB CC 2F055
  • G01L9/00,305@C
    		•  ..Special etching method (e.g. use of sacrifice layers) HB CC 2F055
  • G01L9/00,305@D
    		•  ..Coupling means for elements HB CC 2F055
  • G01L9/00,305@G
    		•  .related to arrangement of electrodes HB CC 2F055
  • G01L9/00,305@H
    		•  related to fixing and housing structures HB CC 2F055
  • G01L9/00,305@S
    		•  Measuring circuits HB CC 2F055
  • G01L9/00,305@T
    		•  .for compensation HB CC 2F055
  • G01L9/00,305@U
    		•  .Failure, diagnostic circuits HB CC 2F055
  • G01L9/00,305@Z
    		•  Others HB CC 2F055
  • G01L9/00,307
    		•  ..by use of vibration members HB CC 2F055
  • G01L9/00,309
    		•  ..by use of other special properties of semiconductors, e.g. FET HB CC 2F055
  • G01L9/02
    		•  .by making use of variations in ohmic resistance, e.g. of potentiometers HB CC 2F055
  • G01L9/04
    		•  ..of resistance strain gauges HB CC 2F055
  • G01L9/06
    		•  ..of piezo-resistive devices HB CC 2F055
  • G01L9/08
    		•  .by making use of piezo-electric devices HB CC 2F055
  • G01L9/10
    		•  .by making use of variations in inductance HB CC 2F055
  • G01L9/12
    		•  .by making use of variations in capacitance HB CC 2F055
  • G01L9/14
    		•  .involving the displacement of magnets, e.g. electromagnets HB CC 2F055
  • G01L9/16
    		•  .by making use of variations in the magnetic properties of material resulting from the application of stress HB CC 2F055
  • G01L9/18
    		•  .by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electric potential is produced or varied upon the application of stress HB CC 2F055
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