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  • G01L1/00
    		•  Measuring force or stress, in general (measuring force due to impact G01L 5/00) [4] HB CC 2F049
  • G01L1/00@A
    		•  Measuring stress levels HB CC 2F049
  • G01L1/00@B
    		•  .By optical means HB CC 2F049
  • G01L1/00@C
    		•  .By acoustic means HB CC 2F049
  • G01L1/00@D
    		•  .Using of strain gages HB CC 2F049
  • G01L1/00@E
    		•  .Using of stress paints, films HB CC 2F049
  • G01L1/00@F
    		•  .By magnetic means HB CC 2F049
  • G01L1/00@G
    		•  .Measuring stress distributions HB CC 2F049
  • G01L1/00@H
    		•  Measuring tensile forces HB CC 2F049
  • G01L1/00@J
    		•  Measuring circuits HB CC 2F049
  • G01L1/00@K
    		•  .Compensating circuits HB CC 2F049
  • G01L1/00@L
    		•  Using of surface acoustic waves HB CC 2F049
  • G01L1/00@M
    		•  Calculating stress levels using of models (newly established in H11) HB CC 2F049
  • G01L1/00@Z
    		•  Others HB CC 2F049
  • G01L1/02
    		•  .by hydraulic or pneumatic means HB CC 2F049
  • G01L1/04
    		•  .by measuring elastic deformation of gauges, e.g. of springs HB CC 2F049
  • G01L1/06
    		•  .by measuring the permanent deformation of gauges, e.g. of compressed bodies HB CC 2F049
  • G01L1/08
    		•  .by the use of counterbalancing forces HB CC 2F049
  • G01L1/10
    		•  .by measuring variations of frequency of stressed vibrating elements, e.g. of stressed strings (using resistance strain gauges G01L 1/22) HB CC 2F049
  • G01L1/10@A
    		•  Using of piezoelectric substances HB CC 2F049
  • G01L1/10@Z
    		•  Others HB CC 2F049
  • G01L1/12
    		•  .by measuring variations in the magnetic properties of materials resulting from the application of stress HB CC 2F049
  • G01L1/14
    		•  .by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators HB CC 2F049
  • G01L1/14@A
    		•  By capacity changes HB CC 2F049
  • G01L1/14@J
    		•  .Related to structures (newly established in H11) HB CC 2F049
  • G01L1/14@K
    		•  ..Manufacturing by using of micro machining techniques (newly established in H11) HB CC 2F049
  • G01L1/14@L
    		•  .Related to measuring circuits (newly established in H11) HB CC 2F049
  • G01L1/14@B
    		•  By changes in inductance HB CC 2F049
  • G01L1/14@Z
    		•  Others HB CC 2F049
  • G01L1/16
    		•  .using properties of piezo-electric devices HB CC 2F049
  • G01L1/16@A
    		•  Related to piezoelectric materials (newly established in H11) HB CC 2F049
  • G01L1/16@B
    		•  Related to structures or arrangements (newly established in H11) HB CC 2F049
  • G01L1/16@C
    		•  .Related to laminated structures (newly established in H11) HB CC 2F049
  • G01L1/16@G
    		•  Related to measuring circuits (newly established in H11) HB CC 2F049
  • G01L1/16@Z
    		•  Others (newly established in H11) HB CC 2F049
  • G01L1/18
    		•  .using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material HB CC 2F049
  • G01L1/18@A
    		•  Forming piezo electric resistance elements on semiconductor substrates (newly established in H11) HB CC 2F049
  • G01L1/18@B
    		•  Using of field effect transistors (FET) (newly established in H11) HB CC 2F049
  • G01L1/18@Z
    		•  Others (newly established in H11) HB CC 2F049
  • G01L1/20
    		•  .by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids (of piezo-resistive materials G01L 1/18); by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress HB CC 2F049
  • G01L1/20@A
    		•  Using of conductive rubbers (newly established in H11) HB CC 2F049
  • G01L1/20@B
    		•  .Capable of detecting pressure-sensing positions (newly established in H11) HB CC 2F049
  • G01L1/20@C
    		•  .Cylindrical conductive rubber profiles (newly established in H11) HB CC 2F049
  • G01L1/20@G
    		•  Measuring changes in contact area of elastic conductive materials (newly established in H11) HB CC 2F049
  • G01L1/20@Z
    		•  Others (newly established in H11) HB CC 2F049
  • G01L1/22
    		•  ..using resistance strain gauges HB CC 2F049
  • G01L1/22@A
    		•  Measuring circuits HB CC 2F049
  • G01L1/22@B
    		•  .Compensating circuits HB CC 2F049
  • G01L1/22@C
    		•  With additional elements excluding strain gages HB CC 2F049
  • G01L1/22@D
    		•  Sealing element units HB CC 2F049
  • G01L1/22@E
    		•  Parallelogram types [figure] HB CC 2F049
  • G01L1/22@F
    		•  Both ends, fixed perimeters [figure] HB CC 2F049
  • G01L1/22@G
    		•  Pin types [figure] HB CC 2F049
  • G01L1/22@H
    		•  Complex cantilever types [figure] HB CC 2F049
  • G01L1/22@L
    		•  Shearing stress detecting types HB CC 2F049
  • G01L1/22@M
    		•  Using of thin film gages HB CC 2F049
  • G01L1/22@Z
    		•  Others HB CC 2F049
  • G01L1/24
    		•  .by measuring variations of optical properties of material when it is stressed, e.g. by photoelastic stress analysis HB CC 2F049
  • G01L1/24@A
    		•  Using of optical fibres as pressure sensitive materials (newly established in H11) HB CC 2F049
  • G01L1/24@Z
    		•  Others (newly established in H11) HB CC 2F049
  • G01L1/25
    		•  .using wave or particle radiation, e.g. X-rays, neutrons (G01L 1/24 takes precedence) [4] HB CC 2F049
  • G01L1/26
    		•  .Auxiliary measures taken, or devices used, in connection with the measurement of force, e.g. for preventing influence of transverse components of force, for preventing overload HB CC 2F049
  • G01L1/26@A
    		•  Preventing unbalanced loading HB CC 2F049
  • G01L1/26@B
    		•  Preventing overloading HB CC 2F049
  • G01L1/26@C
    		•  Terminal structures HB CC 2F049
  • G01L1/26@D
    		•  Compensating devices HB CC 2F049
  • G01L1/26@Z
    		•  Others HB CC 2F049
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