F-Term-List

H01L31/00-31/02@Z;31/08-31/08@Z;31/10-31/10@Z;31/18

AA00
TYPES OF THE LIGHT RECEIVING ELEMENT AND THE RADIATION DETECTION ELEMENT

AA01

AA02

AA03

AA04

AA05

AA06

AA07

AA08

AA09

. Photodiode (PD)

. . PN junction type

. . PN heterojunction type

. . PIN junction type

. . Schottky barrier type

. . . MSM Schottky barrier type

. . Avalanche-Photodiode (APD)

. . . Absorption/multiplication separation type APD

. . . Superlattice APD

AA11

AA12

AA13

AA14

AA15

AA17

AA18

AA20

. Phototransistor (PT)

. . Bipolar type

. . . PN heterojunction type

. . Field-effect type (FET)

. . . MIS (MOS) type FET

. Photoconductor (light conductivity type)

. . P-type

. Other types of element

AB00
ELEMENT BODY MATERIAL (SUBSTRATE, ELECTRODES, AND THE LIKE ARE COVERED BY FA-HA)

AB01

AB02

AB03

AB04

AB05

AB07

AB09

. Material

. . Group IV

. . . Single crystal, polycrystalline

. . . Microcrystalline

. . . Amorphous

. . Group III-V

. . Group II-VI (HgCdTe, and the like)

AB11

AB12

AB13

AB14

AB16

AB17

AB19

. . Organic material

. . . Azo dyes

. . . Phthalocyanine compound

. . . Hydrazone compound

. Dopant material

. . For the determination of conductivity type

. Binder material (for the element body only)

BA00
PURPOSE AND EFFECT

BA01

BA02

BA03

BA04

BA05

BA06

BA07

BA08

BA09

BA10

. Enhancing sensitivity (quantum efficiency improvement)

. . Reduction and prevention of surface reflection

. Response improvement (frequency characteristic enhancement)

. S/N ratio improvement

. Reduction of dark current

. Dynamic Range extension (high contrast ratio)

. Energy resolution enhancement (radiation, particle beam)

. Edge breakdown prevention

. Improvement of spectral characteristics

. Performance stabilization (characteristic fluctuation prevention)

BA11

BA12

BA13

BA14

BA15

BA16

BA17

BA18

. Control of band gap

. Control of the impurity concentration

. Control of the lattice constant

. Reduction of the electrical resistance

. Capacity reduction

. Increase in capacity

. Prevention of malfunction, countermeasure to the disturbance

. Productivity improvement, cost reduction

BA21

BA23

BA25

BA26

BA28

BA30

. Improvement of environmental resistance (heat, water, dust, vibration, and the like)

. Longer life

. Downsizing, light-weight

. Installation and fixing related matter

. Manufacturing process related matter (yield improvement, and the like)

. Other purpose and effect

BB00
APPLICATION

BB01

BB02

BB03

BB05

BB06

BB07

BB08

BB09

BB10

. For optical communication

. For a line sensor

. For an image sensor

. For the target for the image pick-up tube

. For solar cells

. For measurement

. For medical purpose

. Electrophotographic photoconductor

. For an optical pickup

BB11

BB20

. For remote control

. Other application

CA00
PRODUCTION METHOD AND PROCESSES OF AMORPHOUS (ALSO INCLUDING MICROCRYSTAL)

CA01

CA02

CA04

CA05

CA07

CA08

CA09

CA10

. Chemical vapor deposition (CVD)

. . Plasma CVD method (glow discharge method)

. Physical vapor deposition (PVD)

. . Vacuum deposition method

. Manufacturing equipment

. . Deposition chamber structure

. Additional process (doping, heat treatment, and the like)

. Other related to amorphous manufacturing

CB00
PRODUCTION METHOD AND PROCESSES OF SUBSTANCE OTHER THAN AMORPHOUS

CB01

CB02

CB03

CB04

CB05

CB06

CB07

CB08

CB09

CB10

. Crystal growth

. . Liquid phase epitaxy (LPE)

. . Vapor phase epitaxy (VPE)

. . . MOCVD method

. Thin-film technology (CB01-04 takes precedence)

. . Vacuum deposition method

. . Sputtering method

. Doping

. . Thermal diffusion

. . Ion implantation

CB11

CB12

CB14

CB15

CB17

CB18

CB20

. Heat treatment

. . Light annealing

. Etching

. Electrode formation method

. Element division (dicing, scribing)

. Characterized in the production conditions (temperature, pressure, time, and the like)

. Others, matters related to this section

DA00
ELEMENT STRUCTURE IN GENERAL (TYPE IS COVERED BY AA, DETAILS IS COVERED BY FA, AND THE LIKE)

DA01

DA02

DA03

DA04

DA05

DA06

. Structure of the photodiode.

. . Mesa type

. . Substrate type (bulk type)

. . Reach-through type

. . Backside incident type

. . Waveguide type

DA11

DA12

DA16

. Phototransistor structure related matter

. . Based non-terminal type

. Phototransistor structure related matter

DA21

DA22

DA23

DA24

DA25

DA26

DA27

DA28

DA29

DA30

. Constitutional element of the component body

. . Guard ring

. . . Structure of guard ring

. . Channel stopper

. . Buried layer

. . Window layer

. . Bonding layer (including between layer and layer and between substrate and layer)

. . . Buffer layer (such as for lattice constant matching)

. . . . Graded buffer layer

. . . Block layer

DA31

DA32

DA33

DA34

DA35

DA36

DA39

. . Band structure

. . . Quantum structure

. . . . Quantum dot

. . . . Quantum wire or nanorods

. . . . Superlattice, multiple quantum well

. . . Graded

. . Photonic crystal

DA41

DA44

DA50

. Stacking type (tandem type)

. Characterized by the shape of the element (including the surface shape)

. Others, matters related to this section

EA00
MODULARIZATION

EA01

EA02

EA03

EA04

EA05

EA06

EA07

. The same type multiple elements

. . Array

. . . One-dimensional (line sensor)

. . . Two-dimensional (solid-state imaging device and the like)

. . . Inter-element isolation

. . . . PN separation

. . . . Insulation separation

EA11

EA12

EA13

EA14

EA16

EA18

EA20

. Heterogeneous composite element

. . Composite with the amplifying element

. . Composite with the switching element

. . Composite with the light emitting element

. Arrangement of the element

. Electrical connection between the elements

. Others, modularization related matter

FA00
ELECTRODE. (THE TERMINAL IS COVERED BY JA)

FA01

FA02

FA03

FA04

FA05

FA06

FA07

. Material

. . Transparent electrode

. . . SnO2

. . . ITO

. . Metal electrode

. . Organic material

. . Paste member

FA11

FA12

FA13

FA15

FA16

FA17

FA18

FA20

. Structure

. . Planar shape, arrangement

. . Multi-layer structure

. Function

. . Reflective film combined-use

. . For the mount

. . Light-shielding film combined-use

. Others, electrode related matter

GA00
SUBSTRATE (ON WHICH THE ELEMENT BODY IS FORMED)

GA01

GA02

GA03

GA04

GA05

GA06

GA07

. Material (AB takes precedence)

. . Insulating substrate (glass, and the like)

. . Semiconductor substrate

. . . Group IV

. . . . SOI substrate

. . . Groups III-V

. . . Hetero-junction as a purpose

GA11

GA12

GA13

GA17

GA20

. Structure

. . Surface shape

. . Multi-layer structure

. Surface orientation

. Others, substrate related matter

HA00
OTHER DEVICE COMPONENT

HA01

HA02

HA03

HA04

HA05

HA06

HA07

HA09

HA10

. Anti-reflection film

. . Material

. . . Inorganic material

. . Structure

. Filter membrane (including the wavelength conversion, and the like)

. . Material

. . Structure

. Reflective film (except electrode)

. Light-shielding film, radiation shielding film (except electrode)

HA11

HA12

HA13

HA15

HA17

HA20

. Surface protection film

. . Material

. . . SiO2

. Plasmon resonance (HA15 takes precedence under viewpoint HA)

. Scintillator (that separated from element is covered by JA18)

. Others, matters related to this section

JA00
CASE, IMPLEMENTATION

JA01

JA02

JA03

JA05

JA06

JA07

JA08

JA09

JA10

. Mount of element

. . On the terminal, lead frame

. . On the base

. Case, base, package

. . Molding type

. . Can sealing

. Bonding

. . Wire bonding

. . Flip-chip bonding

JA11

JA12

JA13

JA14

JA17

JA18

JA19

JA20

. Coupling with the optical member

. . Lens

. . Optical filter

. . Light guide (optical fiber, and the like)

. Radiation shielding plate

. Scintillator plate

. Terminal, lead frame

. Other, case, implementation related matter

KA00
PERIPHERAL CIRCUIT

KA01

KA02

KA04

KA05

KA06

KA07

. Intended to target a plurality of light receiving elements

. Irradiates the bias light

. Function of circuit

. . Gain control

. . Temperature compensation

. . High-speed response

KA11

KA12

KA13

KA14

KA15

KA16

KA17

KA20

. Bias circuit

. . Current voltage converter

. . Amplification unit

. . Switching unit

. Detection circuit for the feedback

. . Output current voltage detection of the light-receiving element

. . Temperature detection

. Other peripheral circuit related matters (read-out circuit, and the like)

LA00
RECEIVED WAVELENGTH BANDS AND THE OBJECT TO BE DETECTE.

LA01

LA02

LA03

LA04

LA06

LA07

LA08

LA09

. Infrared light

. Visible light

. Ultraviolet light

. Terahertz band

. Radiation

. . X-ray

. Received light wavelength being changeable

. Broadband light (including a multi-color light-receiving)

XA00
ORGANIC PHOTOELECTRIC CONVERSION ELEMENT

XA01

XA02

. Sensitive device of infrared, visible, short wavelength or particle beam

. . Device having in particular at least one potential barrier

XA11

XA12

XA13

XA14

XA15

XA16

XA17

XA19

XA20

. Details of device

. . Feature in at least one potential barrier

. . . Bulk heterojunction

. . . Heterojunction of organic and inorganic semiconductors

. . . . Utilizing the sensitizing effect of the semiconductor material

. . . Having a PIN junction

. . . Others

. . Structure for optical confinement

. . Module

XA21

XA22

XA23

XA24

XA25

. . Tandem

. . Integration

. . Electrode

. . Substrate

. . Feature in structure of other details

XA31

XA32

XA33

XA34

XA35

XA36

XA37

XA38

XA39

XA40

. Selection of material

. . Feature in the organic semiconductor material

. . . Feature in polymer compound

. . . . Ring constituting the main chain, linking group being C and H only

. . . . Ring constituting the main chain, linking group including S

. . . . . Characterized by the polythiophene

. . . . . . Repeating structural unit including a plurality of types

. . . . . . Characterized by the side chain

. . . . Ring and linking group of the main chain containing N

. . . . Ring and linking group of the main chain containing O

XA41

XA42

XA43

XA44

XA45

XA46

XA47

XA48

XA49

XA50

. . . . Ring and linking group of the main chain containing element except C, H, S, N, O

. . . . Others

. . . Feature in low molecular weight compound

. . . . Aromatic with basic skeleton including C only (XA49 takes precedence)

. . . . Basic skeleton containing S

. . . . Basic skeleton containing N

. . . . Basic skeleton containing O

. . . . Basic skeleton containing element except C, S, N, O

. . . . Characterized by fullerene

. . . . Others

XA51

XA52

XA53

XA54

XA55

XA56

. . Characterized by the specific site of the device or element material

. . . Characterized by the additive

. . . Characterized by the combination of the photoelectric conversion layer material

. . . Characterized by the electron transport layer material

. . . Characterized by the positive hole transport layer material

. . . Electrode material

XA61

XA62

XA63

XA64

XA65

XA66

XA67

. Characterized in the method and device for manufacturing and processing

. . Characterized by the application

. . . Characterized by the additive

. . . Others

. . Characterized by the deposition

. . Characterized by the heat treatment

. . Characterized by the patterning

XB00
INORGANIC PHOTOELECTRIC CONVERSION ELEMENT

XB01

XB02

XB03

XB04

XB05

XB06

XB07

XB08

. Details

. . Container, sealing

. . Covering

. . Electrode

. . Optical element or optical device coupled with equipment

. . Special surface structure

. . Cooling, heating, ventilation or temperature compensation device

. . Characterized by the supporting substrate

XB11

XB12

XB13

XB14

XB15

XB16

XB17

XB18

XB19

XB20

. Characterized by the semiconductor body

. . Feature in the material

. . . Inorganic material

. . . . Selenium or tellurium

. . . . Including only the element of Group IV of the periodic table

. . . . . Characterized in the doping material

. . . . Containing II-VI compound only

. . . . Containing III-V compound only

. . . . Containing IV-IV compound only

. . . . Containing the other compound

XB21

XB22

XB24

XB25

XB26

XB27

XB28

. . . . Containing two or more compound included in XB14 to XB20

. . . . Of different semiconductor regions

. . Characterized by the semiconductor shape or the shape of semiconductor region

. . Characterized by the direction of the crystal structure or crystal plane

. . . Polycrystalline semiconductor (XB08 takes precedence)

. . . Amorphous semiconductor (XB08 takes precedence)

. . . Other non-single-crystal material (XB08 takes precedence)

XB31

XB32

XB33

XB34

XB35

XB36

XB37

XB38

XB39

XB40

. Control of the current in the device by radiation

. . Sensitive to infrared, visible light, and ultraviolet light (XB34 takes precedence)

. . Feature in at least one potential barrier

. . . Sensitive to infrared, visible light, or ultraviolet light

. . . . Feature in a single potential barrier

. . . . . Potential barrier of PN homojunction type

. . . . . Potential barrier of PIN type

. . . . . Potential barrier acting in avalanche mode

. . . . . Potential barrier of Schottky type

. . . . . Potential barrier of PN heterojunction type

XB41

XB42

XB43

XB44

XB45

XB46

XB47

XB48

. . . . Feature in two potential barriers

. . . . Feature in at least three potential barriers

. . . . Characterized by the electric field effect action

. . . . . Conductor-insulator-semiconductor type

. . . Device sensitive to ultra-short wave

. . . . Bulk effect radiation detector type

. . . . Surface barrier or thin PN junction detector type

. . . . Characterized by the electric field effect action

XB51

. Characterized in the method and device for manufacturing or processing

5F849	LIGHT RECEIVING ELEMENTS
	H01L31/00 -31/02@Z;31/08-31/10@Z;31/18;H10K30/60-30/65;39/30