F-Term-List

H01S5/00-5/50,630

AA00
STRUCTURE OF SEMICONDUCTOR LASER EXCLUDING VERTICAL CAVITY (1)

AA01

AA02

AA03

AA04

AA05

AA06

AA07

AA08

AA09

. Active layers being planar or flat layers without cuts

. . having structures of semiconductor layer for optical confinement or current constriction

. . . by buried layers

. . . . provided above an active layer

. . . . . having ridged portions being buried in the layer

. . . . . having grooved portions being buried in the layer or SAS structures

. . . . provided under an active layer

. . . having ridge shape above active layer excluding by buried layer

. . . using lower structure of active layer excluding buried-types

AA12

AA13

AA14

AA15

AA16

AA17

. . having structures other than semiconductor layers for optical confinement or current constriction

. . . using current paths or current constriction parts introducing impurities

. . . . with impurities reaching an active layer

. . . forming PN junctions laterally with impurities or TJS

. . . using insulators

. . . . by selective oxidation

AA21

AA22

AA23

AA24

AA26

AA27

AA29

AA30

. Active layers not being planar or having structure or shape distribution

. . achieving guided wave mechanisms by semiconductor layers installed on both sides of the active layer

. . . BH structure with buried mesa containing active layers formed by selective growth

. . . . DC-PBH structure with a active layer buried in the region between two grooves

. . . BH structure buried after forming mesa part including active layer by etching

. . . . DC-PBH structure embedding active layer in region between two grooves

. . . achieving embedding structure by using shape e.g. projections under active layer

. . . burying an active layer in grooves or recesses

AA32

AA33

AA34

AA35

AA40

. . using shape distribution of active layers

. . . using shapes under active layers mainly of substrates

. . . . using projections grooves or recesses

. . . . using slopes

. . having PN junction structure laterally

AA41

AA42

AA43

AA44

AA45

AA46

AA47

AA48

AA50

. characterised by structures for lateral confinement or constriction

. . Structure of buried semiconductor layer

. . . Characteristics for optical confinement

. . . . Real refractive index difference which has smaller refractive index than that of the active layer or the clad layer

. . . . Optical absorption or complex refractive index guided wave

. . . Characteristics for current constriction

. . . . High resistances or insulations

. . . . Reverse-conductivity e.g. PN junction

. . . . Current barrier characteristics not covered by AA48 e.g. hetero barriers

AA52

AA53

AA54

AA55

AA56

AA57

. . Structures for controlling conductivity of impurities or semiconductor layers for current constriction

. . . of semiconductor layers

. . . . using plain orientation dependency of impurity conduction types

. . . Characteristics of leading-in arrangements for impurities with diffusions or ion implantations

. . . . being current paths

. . . . being current constriction parts

AB00
STRUCTURE OF SEMICONDUCTOR LASER EXCLUDING VERTICAL CAVITY (2)

AB01

AB02

AB03

AB04

. Structures of resonators

. . using semiconductor diffraction grating

. . . DBR lasers

. . . . having phase adjustment region

AB13

AB14

AB15

AB16

AB17

AB19

. . . DFB lasers

. . . . having phase shifts

. . . . . arranged in other parts than centre

. . . . . a plurality of

. . . . Multielectrodes

. . . . Distribution of Loss or gain regions

AB23

AB24

AB25

AB27

AB28

AB29

AB30

. . . arranging a plurality of diffraction gratings with different cycles for each laser stripe

. . . Chirp diffraction gratings

. . . arranged in other parts than plane parts

. . . Shapes of diffraction gratings

. . . . Wave types

. . . . Saw type

. . . . Others

AB32

AB33

AB34

AB35

. . External resonators

. . . Structures of reflectors

. . . . using diffraction gratings

. . . . . fibre gratings

AB43

AB44

AB45

AB46

AB47

AB49

AB50

. . . Optical elements arranged in resonators

. . . . Optical filters

. . . . Multiplexer/demultiplexer

. . . . Diffraction gratings

. . . . Active optical elements

. . Ring lasers

. . characterised by other structures

AB51

AB52

AB53

. characterised by light take-off direction

. . Surface-emitting lasers

. . . using semiconductor diffraction gratings

AB61

AB62

AB63

AB64

AB65

AB66

. Waveguide shape or structure in resonator

. . changing width

. . changing thickness

. . changing continuously

. . Changing discontinuously

. . Diagonal waveguides

AB71

AB72

AB73

AB74

AB75

AB76

AB78

AB79

. Structures in resonators

. . Window structures

. . . having unexcited regions

. . . having transparent regions

. . . . with buried active layers

. . . . disordering quantum well active layers

. . decreasing reflectivity

. . . having inclined end faces

AB82

AB83

AB90

. . Modulation regions

. . . Saturable absorption regions

. using photonic crystals

AC00
STRUCTURE OF SEMICONDUCTOR LASER HAVING VERTICAL CAVITY

AC01

AC02

AC03

AC04

AC05

AC10

. Structures of reflectors

. . on substrates

. . . Semiconductor reflectors

. . . Dielectric reflectors

. . . Metal reflectors

. . . Others

AC12

AC13

AC14

AC15

AC20

. . Reflectors at opposite side of substrates

. . . Semiconductor reflectors

. . . Dielectric reflectors

. . . Metal reflectors

. . . Others

AC22

AC23

AC24

AC26

. . characterised by period of reflectors

. . . with periodic change

. . . combined with reflectors having multiple cycles

. . characterised by shape of reflector

AC31

AC32

AC33

AC34

AC35

AC36

. Optical confinement or current confinements

. . Positions

. . . arranged at the side of active layers e.g. BH

. . . arranged between active layer and substrate

. . . arranged above active layer

. . . arranged at the both top and bottom of active layer

AC42

AC44

AC46

AC48

. . using oxidised coating or layers

. . using differences or grooves in layered structure

. . by ion implantation

. . Special structures or shapes to control polarised light

AC51

AC52

AC53

AC54

. Directions of light to be taken-out

. . emitted from surfaces of substrates

. . from back surfaces of substrates

. . to horizontal direction

AC61

AC63

AC70

. characterised by a design relating to matching of resonator and standing wave

. having a plurality of resonators on the path of light

. using photonic crystals

AD00
MONOLITHIC INTEGRATION WITH A PLURALITY OF ELEMENTS ON THE SAME GROWTH SUBSTRATE

AD01

AD02

AD03

AD04

AD05

AD06

AD10

. integrating a plurality of lasers

. . Array type

. . . Phase synchronisation

. . . Multiple beams

. . . . having the same wavelength

. . . . having multiple wavelengths

. . integrating vertically to substrate

AD11

AD12

AD13

AD14

AD15

AD16

AD17

AD18

AD19

AD20

. Integrated light receiving elements

. Integrated optical modulators

. . Active and modulation layer being deposited at the same time

. . having quantum well waveguides

. Integrated passive waveguides

. . Optical connection functions with other integrated elements

. . Adjusting function of laser spots

. . Tapered waveguides

. . integrating a composing filter and a branching filter

. integrating lens

AD21

AD22

AD30

. integrating driving circuits

. integrating non-linear elements

. Other elements integrated *

AF00
STRUCTURE OF LAMINATING DIRECTION OF SEMICONDUCTOR - 1

AF01

AF02

AF03

AF04

AF05

AF06

AF07

AF08

AF09

. Structures of active layer (This F-term is not applied.)

. . characterised by active layer of homo-junction or hetero-junction

. . characterised by quantum well structures

. . . being strained quantum well

. . . . compensating distortions

. . . having another well layer or barrier layer in the same active layer

. . . having either well layer or barrier layer composed of multiple layers

. . being quantum lines or quantum dots

. . . by self organization

AF12

AF13

AF15

AF18

AF20

. . characterised by shapes or structures

. . . characterised by thickness of active layer

. . characterised by materials or compositions

. . characterised by concentrations or kinds of impurities (Additional classification in viewpoint AJ)

. . Other characteristics

AF21

AF22

AF24

AF25

AF26

AF27

AF28

AF29

AF30

. Structures of clad layers e.g. for confining current or light in active layers (This F-term is not applied.)

. . with composition variations (achieving composition variation by superlattice structure AF25)

. . characterised by multilayer structures

. . . Superlattice structures

. . . . Superlattice by a plurality of laminations of single atom layers e.g. monoatomic superlattices

. . . . Natural superlattices or uses of crystal regular growths occurring in nature

. . . . having strain

. . . . having variable compositions or thicknesses of each layer

. . . . having average composition changing continuously

AF32

AF33

AF35

AF36

AF38

AF40

. . characterised by shapes or structures

. . . characterised by asymmetricalness of clad layers arranged above and below an active layer

. . characterised by materials or compositions

. . . using material systems different from those of active layers

. . characterised by concentrations or kinds of impurities (Additional classification in viewpoint AJ)

. . Other characteristics

AF41

AF42

AF43

AF44

AF45

AF46

AF47

AF48

AF49

. Structures of guide layers e.g. for guiding lights (This F-term is not applied.)

. . with composition variations (achieving composition variation by superlattice structure AF45)

. . . GRIN or STIN structures

. . Multilayer structures

. . . Superlattice structures

. . . . Superlattice by a plurality of laminations of single atom layer e.g. monoatomic superlattices

. . . . Natural superlattices or uses of crystal regular growths occurring in nature

. . . . having strain

. . . . having average composition changing continuously

AF52

AF53

AF54

AF55

AF56

AF58

AF60

. . characterised by shapes or structures

. . . having different thicknesses or compositions of guide layers arranged above and below an active layer

. . . being formed in position not in contact with active layer e.g. intercalating a clad layer

. . characterised by materials or compositions

. . . using material system different from active layer

. . characterised by concentrations or kinds of impurities (Additional classification in viewpoint AJ)

. . Other characteristics

AF61

AF62

AF64

AF65

AF66

. Structures of contacting layers or layers facilitating applying current or voltage in direct contact with electrode (This F-term is not applied.)

. . with composition variations (achieving composition variation by superlattice structure AF65)

. . Multilayer structures

. . . Superlattice structures

. . . . having average composition changing continuously

AF72

AF75

AF76

AF78

AF80

. . characterised by shapes or structures

. . characterised by materials or compositions

. . . using material system different from active layers

. . characterised by concentrations or kinds of impurities (Additional classification in viewpoint AJ)

. . Other characteristics

AF81

AF82

AF84

AF85

AF86

. Structures of current confinement layers or layers for lateral current confinement (This F-term is not applied.)

. . with composition variations (achieving composition variation by superlattice structure AF85)

. . characterised by multilayer structures excluding mere P/N constriction layers or the like without any characteristics

. . . Superlattice structure

. . . . having average composition changing continuously

AF92

AF94

AF95

AF96

AF97

AF98

AF99

. . characterised by shapes or structures

. . characterised by materials or compositions

. . . using semiconductors of material systems different from those of active layers

. . . Consisting of oxide

. . . Consisting of resin

. . characterised by concentrations or kinds of impurities (Additional classification in viewpoint AJ)

. . Other characteristics

AG00
STRUCTURE OF LAMINATING DIRECTION OF SEMICONDUCTOR - 2

AG01

AG02

AG03

AG05

AG06

AG07

AG08

AG09

. Optical absorption layers

. . Saturable absorbing layers

. Light reflecting layers

. Etching stop layers

. Layers for preventing meltback at the time of LPE

. Layers for antioxidation

. Layers for preventing impurity diffusion

. Layers for preventing evaporation of semiconductor materials

AG11

AG12

AG13

AG14

AG17

AG18

AG20

. Buffer layers or layers for improvement or maintenance of crystalline

. . Layers with uniform composition

. . Graded layers

. . Multilayer

. Layers for preventing overflow

. . MQB or electronic confinements using interference of multiple quantum well

. Layers not covered by AF00-AG18

AG21

AG22

AG23

AG24

. with explicit designs of interrelations between layers

. . based on refractive index

. . based on thermal expansion coefficient

. . based on impurity concentration

AH00
MATERIAL SYSTEM OF ACTIVE LAYER: SUBSTRATE MATERIAL

AH01

AH02

AH03

AH04

AH06

AH07

AH08

. III-V groups

. . AlGaAs systems

. . . In(GaAl)As/GaAs substrate including GaInAs/GaAs substrates

. . . GaInAsN system being long wavelength

. . (AlGa)InP systems or 3-4 quaternary materials including P

. . . InP substrate matching systems

. . . GaAs substrate matching systems

AH12

AH13

AH14

. . (AlGa)InAs P systems or quaternary-quinternary materials including In As and P

. . . GaAs substrate matching systems

. . . InP substrate matching systems

AH22

AH23

AH24

AH28

AH29

AH30

. . AlGaIn N systems or nitride systems

. . . AlGaInNAs P systems added small amount of As and/or P

. . . cubic

. . III-V group compound semiconductors not otherwise provided for *

. . . GaAs substrate matching systems *

. . . InP substrate matching systems *

AH31

AH32

AH34

AH35

AH36

AH37

AH40

. II-VI groups

. . ZnSSe systems (GaAs substrate or ZnSSe substrate matching system of binary or ternary material including Zn and S or Se)

. IV-VI groups

. I-III-VI2 groups

. organic

. Combination of different material systems

. Other active layer materials *

AH41

AH42

AH43

AH44

AH45

AH47

AH48

AH49

AH50

. Material of substrate

. . adapted for hetero substrates

. . . Metallic substrates *

. . . Sapphire substrates

. . . Quartz crystal silicon dioxide or glass substrates

. . . Semiconductor substrates

. . . . Silicon substrates

. . . . Semiconductor substrates not covered by AH48 *

. . . . Other semiconductor substrates *

AJ00
CHARACTERISTIC FEATURE OF IMPURITIES

AJ01

AJ02

AJ03

AJ04

AJ05

AJ06

AJ10

. Impurity materials

. . P-type impurities

. . . Zinc (Zn)

. . . Magnesium (Mg )

. . . Beryllium (Be)

. . . Carbon (C)

. . . Others *

AJ12

AJ13

AJ14

AJ15

AJ20

. . N-type impurities

. . . Silicon (Si)

. . . Selenium (Se)

. . . Germanium (Ge)

. . . Others *

AJ22

AJ23

AJ24

AJ30

. . promoting high resistance

. . . Iron (Fe)

. . . Chromium (Cr)

. . . Others *

AJ32

AJ35

AJ36

. . Amphoteric impurities dope

. . for luminescence centre

. . using residual impurities

AJ41

AJ42

AJ43

AJ45

. Plural impurities dope

. . Impurities of different conduction type

. . Impurities of same conduction type

. Modulation dope

AK00
CHARACTERISTIC FEATURE OF STRUCTURE OR MATERIAL OF ELECTRODE

AK01

AK02

AK04

AK05

AK08

. Materials or combinations thereof

. . Single materials *

. . Combinations of a plurality of materials

. . . Alloy materials *

. . . Multilayer electrodes including alloying by following annealing *

AK12

AK13

AK14

AK15

AK16

AK17

AK20

. . Characteristic features or functions

. . . improving ohmic

. . . preventing diffusion of metal ions

. . . improving contacts

. . . preventing oxidation of electrodes

. . . relieving thermal distortions

. . . Others

AK21

AK22

AK23

AK24

. characterised by shapes or arrangements of electrodes

. . having positive or negative electrodes on the same face

. Characteristic features for bonding

. using Schottky electrodes

AL00
CHARACTERISTIC FEATURE OF COATING STRUCTURES OR MATERIALS

AL01

AL02

AL03

AL04

AL05

AL06

AL07

AL10

. Use or locations for applying coatings

. . End face coatings

. . . Reflecting or anti-reflection coatings

. . . . Asymmetrical reflectivity

. . . having multilayer structures

. . Isolation from external atmosphere

. . Insulation or prevention of short circuits

. . Others

AL11

AL12

AL13

AL14

AL15

AL16

AL17

AL18

AL19

. Coating materials

. . Dielectric films

. . . Oxides

. . . Nitrides

. . . Organic substances

. . Semiconductor films

. . Metal films

. . . Alloys

. . characterised by combination of a plurality of materials

AL21

. characterised by coating shapes

AP00
MANUFACTURING METHOD-1

AP01

AP02

AP03

AP04

AP05

AP06

AP07

AP09

AP10

. Crystal growths (This F-term is not applied.)

. . using LPE

. . . characterised by features relating to LPE

. . using VPE

. . . using MOCVD

. . . . having features relating to MOCVD

. . . characterised by VPE not covered by AP06

. . using MBE

. . . having features relating to MBE

AP12

AP13

AP14

AP15

AP16

AP17

AP19

AP20

. . Selective growths

. . . at mask openings

. . . using the base shape

. . . . on mesa

. . . . Burying growth

. . . . using crystalline plane orientation

. . . Lateral growths e.g. ELO or ELOG

. . . characterised by material shape and manufacturing method of mask

AP22

AP23

AP24

AP30

. . characterised by base shapes excluding selective growths

. . . having recesses projections or grooves

. . . characterised by selecting plane directions of bases e.g. inclined substrate *

. . Crystal growth techniques not covered by AP02-AP22

AP31

AP32

AP33

AP35

AP36

AP37

AP38

AP39

. Etchings (This F-term is not applied.)

. . using wet etching

. . using dry etchings

. . having features relating to etchings

. . . characterised by etchant or etching gases

. . . using selective etchings

. . . using crystalline plane orientation

. . . removing damaged places

AP42

AP43

AP44

AP45

AP47

. . characterised by shapes after etching

. . . Forward mesa

. . . Reverse mesa

. . . Vertical mesa

. . characterised by materials shapes or manufacturing methods of mask

AP51

AP52

AP53

AP54

AP56

AP57

AP60

. Doping (This F-term is not applied.)

. . Thermal diffusion

. . . Solid state diffusions

. . Ion implantations

. . controlling the amount of dope

. . . with more than two kinds

. . characterised by doping not covered by AP52-AP57

AP61

AP62

AP63

AP64

AP66

AP67

. Heat treatments or annealing

. . of crystals

. . Annealing after ion implantations

. . Annealing after forming electrodes

. Oxidation treatment techniques

. . Selective oxidation

AP71

AP72

AP73

AP74

AP75

AP76

AP77

AP78

AP79

. characterised by forming electrodes

. forming insulating films or the like

. . CVD

. . PVD

. . . Deposition

. . . Spatter

. . Sticking

. . forming on resonator end faces

. . forming on other surfaces than resonator end faces

AP81

AP82

AP83

AP84

AP85

AP86

AP87

. forming resonant surfaces

. . Cleavages

. . . characterised by lines or grooves

. . . characterised by direction of cleavage

. . . characterised by equipments for cleavages

. . forming resonant surfaces by selective growth

. . Resonant surface forming by etching

AP91

AP92

AP93

AP94

AP95

. Element separation

. . Cleavage

. . . characterised by lines or grooves

. . . characterised by directions

. . . characterised by equipments

AQ00
MANUFACTURING METHOD-2

AQ01

AQ02

AQ03

AQ04

AQ05

AQ06

AQ10

. having features relating to other manufacturing methods

. . Removal or stripping of substrates

. . Substrate composing or direct bonding

. . Surface cleaning

. . using irradiation with light or laser

. . using irradiation with plasma

. . Manufacturing methods not covered by AP01-AP99 or AQ01-AQ06

AQ11

AQ12

AQ13

AQ14

AQ15

AQ16

AQ20

. characterised by conditions under manufacturing

. . Temperature

. . Atmosphere

. . Pressure

. . Flow rate

. . Raw material ratio or mole ratio

. . Change of condition on the way of manufacturing

AR00
PROBLEM OR PURPOSE

AR01

AR02

AR03

AR04

AR05

AR06

AR07

. Features of optical outputs

. . Wavelength

. . . Stabilisation

. . . Single longitudinal modes

. . . Longitudinal multimode

. . . Variable wavelengths

. . . Simultaneous oscillation of multiple wavelengths

AR12

AR13

AR14

AR15

. . Outputs

. . . Stability

. . . Large output

. . . . preventing kink

AR23

AR24

AR25

AR26

. . . promoting high efficiency e.g. threshold reduction or quantum differentiation efficiency

. . . . improving current confinements e.g. preventing current leakage

. . . . improving carrier confinements

. . . . improving optical confinements

AR32

AR33

AR35

AR36

AR37

. . Transverse modes

. . . Single transverse modes

. . Characteristics of modulation

. . . Accelerating

. . . preventing degradation of optical pulse shape

AR42

AR43

AR44

AR45

AR46

. . Polarised light

. . . Linear polarisation

. . . . TM modes

. . . promoting non-polarisation or polarisation-independent

. . . varying polarisation orientation

AR52

AR53

AR54

AR55

AR56

AR57

AR58

AR59

. . Beam shapes spreading or emission directions

. . . rounding or adjusting ratio of aspect

. . . improving or adjusting astigmatic difference

. . . improving radiation angles

. . . Beam diameters

. . . . varying beam diameters

. . . Emission directions or positions

. . . . varying emission directions or positions

AR61

AR62

AR63

AR64

AR65

AR66

AR68

AR69

AR70

. Electrical characteristics

. . reducing element resistance

. . . improving ohmic characteristics

. . . reducing resistance in semiconductor region

. . reducing parasitic capacity

. . Impedance matching

. preventing end face breakages

. Noise reduction

. Enhancing resistance against return light

AR71

AR72

AR73

AR74

AR75

AR78

AR79

AR80

. Thermal characteristics

. . Radiation characteristic improvements

. . cutting heat from the outside

. . Relief of thermal expansion coefficient difference

. . Improvement of high temperature characteristic or achievement of high temperature operation

. Control of impurities

. . Impurity concentration control

. . . Impurities distribution controls

AR81

AR82

AR83

AR84

AR85

AR87

. improving crystal quality

. . reducing defect density

. . improving crystal purity

. . improving flatness

. . improving steepness of surfaces

. Antioxidation at the time of manufacturing

AR91

AR92

AR93

AR94

AR96

AR99

. improving yields reproducibility or quality

. . by improving manufacturing methods

. . by element structures or designs

. saving labour or cost

. preventing element degradation not covered by AR01-AR94

. Others

AS00
TYPE OF LASER OPERATION

AS01

AS02

AS03

AS04

AS05

AS06

AS07

AS10

. Optical amplification functions

. Optical logic functions

. Self-oscillation

. Injection locking

. Wavelength conversion function

. Bistable function

. Pulse shaping function

. Others

MA00
USE OF LD MODULE OR PACKAGE

MA01

MA02

MA03

MA04

MA05

MA06

MA07

MA08

MA10

. Optical communication

. . Signal light source e.g. telegraph apparatuses

. . Optical amplifiers

. . Excitation light source for amplifier

. Optical pickup light sources

. Light sources for laser printers or copiers

. Laser excitation light source excluding optical communication

. Light source for laser beam machining

. Other uses

MB00
COMMON TYPE OF MODULE OR PACKAGE

MB01

MB02

MB03

MB04

MB05

MB10

. LD packages being can-type casings not limited to metal casing

. arranged directly on the surface of substrate wirings or surface-mounting types

. arranging a plurality of optical elements horizontally

. . having many electrode pins extended from casing horizontally e.g. butterfly type

. arranging an optical axis concentrically to a central axis of cylindrical casing e.g. coaxial types

. Packages not otherwise provided for

MC00
PURPOSE FOR MOUNTINGS, MODULES OR PACKAGES

MC01

MC02

MC03

MC04

MC05

MC06

. Miniaturisation

. Reducing the number of parts

. Improved positioning

. Prevention of deterioration

. . Protection of chip

. . Displacement or the like by moment-to-moment change

MC11

MC12

MC13

MC15

MC16

MC17

MC18

MC19

MC20

. Heat

. . Heat dissipation effect improvements

. . Prevention of distortion

. Optics

. . Prevention of return light

. . Prevention of disturbing or stray light

. electrical

. . Prevention of excessive current

. . Speeding-up e.g. higher frequency

MC21

MC22

MC23

MC24

MC25

MC26

MC30

. Facilitating manufacturing process

. . characterised by manufacturing processes

. . . reducing the number of processes

. . . facilitating positioning

. . . . Mounting of chips

. . . . Arrangement of optical components

. Other purposes

MD00
MOUNTING OF LD CHIPS

MD01

MD02

MD03

MD04

MD05

MD07

MD08

MD09

. Mountings

. . characterised by materials

. . . Semiconductors *

. . . Insulators *

. . . Metal *

. . . for heat radiation (Additional classification in MC12)

. . . for reducing distortion

. . . . for reducing thermal distortion (Additional classification in MC13)

MD12

MD13

MD14

MD16

MD17

MD18

. . characterised by shapes or structures

. . . for positioning LD

. . . for positioning optical elements other than LD

. . . for heat radiation (Additional classification in MC12)

. . . for reducing distortions

. . . . for reducing thermal distortions (Additional classification in MC13)

MD23

MD24

MD27

MD28

MD29

MD30

. . . having electric characteristics

. . . . for ensuring insulation

. . . having optical characteristics

. . . . for preventing light returning (Additional classification in MC16)

. . . . Prevention of disturbance light or stray light (Additional classification in MC17)

. . . . for the interference prevention between optical paths

MD32

MD33

MD34

MD35

MD36

MD37

. . having function parts integrated in mount members

. . . Optical elements

. . . . Light receiving elements

. . . . Reflecting members

. . . . Diffraction elements

. . . . Optical waveguides

MD43

MD44

MD45

. . . Electric elements

. . . . Driving circuits

. . . . Thermal resistance elements

MD51

MD52

MD53

MD58

MD59

. Characteristic shapes or structures of LD chip for packaging

. . Structure for avoiding influence of solder and adhesives on luminescence part

. . LD chip structures considering power supply

. characterised by structures of power supply for LD chips

. . Wire bonding

MD61

MD62

MD63

MD64

MD65

MD70

. Mounting configuration of LD chip

. . on substrates of chips

. . on LD structures of chips e.g. being upside-down

. . on a plurality of chips

. . Mounting array laser

. Type for placing chip on lead frame

MD71

MD72

MD73

MD74

MD75

MD76

MD77

MD78

. characterised by positioning method for LD chip onto its placing part

. . by recognising positions

. . . using markers

. . . using LD light as reference

. . by positioning structures

. . . abutting on reference surfaces

. . Self-alignment e.g. solder bump

. . using jigs

MD81

MD82

MD83

MD84

MD85

MD90

. Methods for attaching or fixing LD chips

. . Adhesion

. . . using conductive adhesives

. . Solders

. . . characterised by solder materials or compositions

. . Other fixing methods

ME00
STRUCTURE OF PACKAGE OR OPTICAL MODULE

ME01

ME02

ME03

ME04

ME06

ME08

. of casings or outer packages

. . Materials

. . . Metal

. . . Resin

. . Exterior using moulding

. . Open packages without casing

ME11

ME12

ME14

ME15

. Characteristics of casings

. . characterised by shapes for heat radiation

. characterised by materials of bases stems or seats *

. characterised by shapes or structures e.g. of bases stems or seats.

ME21

ME22

ME23

ME24

ME25

ME30

. Systems for taking out light

. . using windows

. . using fibres

. . . Pigtail type

. . . Receptacle type

. . Others

ME31

ME32

ME33

ME34

. characterised by light take-off parts

. . having optical functions e.g. lens holograms

. . for improving sealing abilities

. . taking account of the thermal properties of light take-off parts

ME41

ME42

ME44

ME46

ME47

ME48

. characterised by structures protecting LD

. . by moulding excluding exteriors

. having a plurality of luminescence parts

. characterised by structures for power supply

. . Wiring structures in module

. . Power supply structures with outside of module

ME51

ME52

ME53

ME54

ME55

ME56

ME57

ME58

. characterised by cooling or heating structures

. . Cooling elements

. . . Peltier element structures

. . . Water cooling

. . Package structures for heat radiation excluding casings

. . . Shapes

. . . Materials

. . Heating elements

ME61

ME62

ME63

ME64

ME65

ME66

ME67

ME68

ME69

. characterised by adhering fixing or positioning (arrangements to mounting of LD chip viewpoint MD)

. . characterised by adhering or fixing

. . . Soldering

. . . Adhesives

. . . Welding

. . . . Laser welding

. . . Screwing

. . . Engagement

. . . Elastic supporting

ME72

ME73

ME74

ME75

ME76

ME77

ME78

ME79

. . characterised by positioning

. . . using position recognitions from outside

. . . . using markers

. . . . using LD light as reference

. . . by positioning structures of each material

. . . . abutting on reference surfaces

. . . using jigs

. . . Self-alignment e.g. solder bump

ME82

ME83

ME84

ME85

ME86

ME87

ME88

ME90

. . Fixed objects

. . . Light emitting units e.g. members having LD chips

. . . Cooling elements

. . . Optical elements

. . . . Window members

. . . . Optical fibres

. . . Light receiving elements

. . . Others *

MF00
COMBINATION OF OPTICAL ELEMENTS BEING CHARACTERISTIC OF THE INVENTION, EXCLUDING LD CHIPS

MF01

MF02

MF03

MF04

MF05

MF10

. Use of characteristic optical elements

. . for structures of resonators

. . for taking out light

. . for monitors

. . Harmonic generation or modulation

. . Others

MF11

MF12

MF13

MF14

MF15

MF16

MF17

MF18

. Kinds of characteristic optical elements

. . Elements for discriminating wavelength

. . . Diffraction gratings

. . . . FBG

. . . . Diffraction grating in plane waveguide

. . . Holograms

. . . Etalons

. . . Dielectric coating filters

MF22

MF23

MF24

MF25

MF26

MF27

MF28

MF29

. . Waveguide function elements

. . . Optical fibres

. . . . Multiplexing and demultiplexing in paths

. . . Plane waveguides

. . . . Multiplexing and demultiplexing in paths

. . Optical multiplexer/demultiplexer

. . Reflection elements

. . . Half mirrors

MF32

MF33

MF34

MF36

MF38

MF39

MF40

. . Elements for controlling polarisation

. . . 1/4 lambda plates or 1/2 lambda plates

. . . Polariser

. . . Faraday rotation element

. . Condensing elements

. . . Lenses

. . Others *

SA00
KIND OF LASERS FOR DRIVING

SA01

SA02

SA03

SA04

SA05

SA06

SA08

SA09

. Resonator structures

. . Intracavity type

. . . Multielectrode type

. . . . provided with a plurality of active regions

. . . . provided with control regions or inactive regions

. . . . . with diffraction gratings

. . External cavity type

. . . provided with diffraction gratings

SA11

SA12

SA14

SA15

SA16

SA17

SA18

SA20

. Driving type

. . Continuous oscillation

. . with modulation

. . . Intensity modulation e.g. AM

. . . . analogue

. . . . digital

. . . Repeated frequency modulation e.g. FM

. . . Wavelength e.g. oscillating frequencies modulations

SA22

SA23

SA24

SA26

SA27

. . controlling longitudinal modes

. . . High frequency superposition

. . . Ultrashort light pulse e.g. less than nsec

. . Variable wavelength

. . Multiple wavelength

SA31

SA32

SA33

SA34

. Luminescence structures

. . Plural oscillation parts

. . . Monolithic laser array

. . . of a plurality of chips

SC00
USE FOR DRIVING

SC01

SC02

SC03

SC05

SC07

SC10

. Optical communication

. . being light source

. . being amplifiers

. Light source for optical discs

. Laser printers

. Others e.g. light sources for laser excitation or working

SE00
CHARACTERISTIC PURPOSE FOR DRIVING

SE01

SE02

SE03

SE10

. Stabilisation mainly adapted for feedback controls (Additional classification in viewpoint SF)

. Control of drive (Additional classification in SG)

. Countermeasures against abnormal conditions (Additional classification in SH)

. Other purposes including related purposes e.g. simplification of structures

SF00
STABILISATION MAINLY ADAPTED FOR DETECTIONS OR FEEDBACK CONTROLS

SF01

SF02

SF03

SF04

SF05

SF06

SF07

SF08

SF09

SF10

. Objects to be detected

. . Light

. . . Power e.g. optical output

. . . . Peak value during modulation

. . . . Time integral value during modulation

. . . . Light waveform during modulation e.g. modulation distortion

. . . . characterised by detection methods e.g. arrangement of PD

. . . Wavelength e.g. oscillating frequencies

. . . . characterised by measuring methods

. . . Repeated frequency e.g. modulation frequencies

SF12

SF13

SF15

SF17

SF19

. . electrical

. . . Driving current or driving voltage

. . . Electrical detections other than driving parts

. . Temperature not being control reference. (Attention is drawn to the boundary between this place and SF68.)

. . Combinations of the arts covered by SF02-SF17

SF31

SF32

SF33

SF34

SF40

. Parameters to be controlled

. . Power for optical output

. . Wavelength e.g. oscillating frequencies

. . Modulation frequency e.g. repeated frequencies

. . Others

SF41

SF42

SF43

SF46

SF47

SF49

SF50

. Objects to be controlled

. . Laser active regions including chips as a whole

. . . electrical e.g. driving current or voltage

. . . Thermal controlling e.g. temperature controlling

. . . . by thermal resistance elements

. . Inactive regions inside chips

. . . Voltage or current

SF52

SF53

SF54

SF60

. . Optical elements outside chips

. . . Active optical elements e.g. optical modulators

. . . Passive optical elements e.g. diffraction gratings

. . Other objects to be controlled

SF61

SF62

SF63

SF64

SF65

SF67

SF68

SF70

. Control methods

. . by comparison with reference value

. . . being single and fixed

. . . being a plurality of or variable

. . . . switching a plurality of prepared reference values according to circumstances

. . . . having variable reference values depending on environmental variations

. . . . . having temperature dependency

. . . . Reference being changed according to resetting

SF72

SF73

SF74

SF76

. . without comparison with reference value

. . . Controlling with circuit designs e.g. installing thermistors in series with LD

. . . Tracing LD operating characteristic using stored data

. . Feedback control using emission light per se

SG00
CONTROL OF DRIVE

SG01

SG02

SG03

SG04

SG05

SG06

SG07

SG08

SG09

. Optical intensity

. . Digital modulations

. . . Repeated frequency

. . . Output; Intensity

. . . Pulse waveform

. . . . Transient characteristic

. . . . . Rising

. . . . . Falling

. . . . Pulse width; Duty ratio

SG12

SG13

SG14

SG15

. . Analogue modulations

. . . Harmonic distortion

. . . . Relaxation oscillation

. . . Noise e.g. S/N ratio

SG21

SG30

. Light wavelength

. Other objects

SH00
COUNTERMEASURES AGAINST ABNORMAL CONDITIONS

SH01

SH02

SH03

SH04

SH05

. Detecting or monitoring degradations or failures

. . Objects to be detected or monitored

. . . electrical

. . . Optical output

. . . Temperature

SH12

SH13

SH14

SH15

SH16

. . Operation after detection

. . . Alarm output

. . . stopping LD operation

. . . Output limitation or output compensation

. . . switching to spares

SH21

SH22

SH23

SH24

. for preventing destructions or degradations

. . by structure of driving systems

. . . Protection circuits

. . . . removing abnormal or excessive currents

SJ00
CHARACTERISTIC CIRCUIT STRUCTURES

SJ01

SJ02

SJ03

SJ04

SJ05

SJ06

SJ07

SJ10

. Characteristic circuits

. . Current mirror circuits

. . Differential switching circuits or differential pair circuits by complementary signals

. . Constant-current circuits

. . Bypass circuits

. . Digital circuits e.g. counters

. . Sample-hold circuits

. . Others *

SJ11

SJ12

SJ13

SJ14

SJ15

SJ16

SJ17

SJ20

. Characteristic elements

. . Transistors

. . Capacitors

. . Inductances

. . Diodes

. . Resistances

. . OP amplifiers

. . Others *

ZM00
FORMS TO BE TESTED OR CHECKED

ZM01

ZM02

ZM03

ZM04

ZM05

ZM10

. Wafers

. Bars

. Chips

. Mountings

. Packages

. Others

ZP00
ITEM TO BE TESTED OR CHECKED

ZP01

ZP02

ZP04

ZP05

ZP06

ZP07

. Electrical characteristics e.g. injection currents

. . Threshold current

. Emission light

. . Spectrum or wavelength

. . Current-optical output characteristics

. . Laser beam diameters or shapes

ZP11

ZP13

ZP15

ZP17

ZP20

. Thickness

. Crystallinity

. Appearances

. Mounting positions

. Others *

ZQ00
CHARACTERISTIC FEATURE FOUND AT THE TIME OF TESTING OR CHECKING

ZQ01

ZQ03

ZQ05

ZQ10

. characterised by structures of goods to be tested or checked

. characterised by equipments for testing or checking e.g. structures shapes or materials

. characterised by methods for testing or checking

. Others

ZR00
CONTENTS OF TESTING OR CHECKING

ZR01

ZR02

ZR10

. Ageing

. Selecting faulty articles

. Other purposes

5F173	SEMICONDUCTOR LASERS
	H01S5/00 -5/50,630