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F-Term-List

5F152 RECRYSTALLISATION TECHNIQUES
H01L21/18 -21/20;21/34-21/36;21/84
H01L21/18-21/20;21/34-21/36;21/84 AA AA00
PURPOSE OR EFFECT 		AA01 AA02 AA03 AA04 AA06 AA07 AA08 AA10
. Controlling growth direction . . Lateral growth . . . in a single direction . Controlling positions of crystal grains . Sizes or shapes of crystal grains . Orientation of crystals . Uniformity . Optimisation according to region
AA11 AA12 AA13 AA14 AA15 AA17 AA20
. Warps stresses or strains . Defects . Flatness; Preventing scattering . Preventing contamination; Cleaning . . Successive treatments e.g. multi-chambers . Checking measuring or monitoring . Others *
BB BB00
USE FOR SEMICONDUCTOR ELEMENT OR THE LIKE 		BB01 BB02 BB03 BB04 BB06 BB07 BB08 BB09 BB10
. Transistors or diodes . . MOSFETs or TFTs . . . Lower layer gate TFTs . . Bipolar transistors . Light emitting elements . . Lasers . Light receiving elements . . Solar cells . Others *
CC CC00
SUBSTRATE 		CC01 CC02 CC03 CC04 CC05 CC06 CC07 CC08 CC09 CC10
. Materials (immediately before crystallisation) * . . Glass . . Quartz . . Plastics or organic materials . . Metals or conductive metal compounds . . Insulating metal compounds e.g. sapphires . . Semiconductors . . . Silicon . . specifying material properties * . . Other materials
CC11 CC12 CC13 CC14 CC16 CC20
. Shapes (immediately before crystallisation) . . characterised by shapes . . . Irregularities holes or grooves . . Other shapes . using substrates as seeds of crystals . Others *
CD CD00
LOWER LAYER FORMED UNDER LAYER TO BE CRYSTALLISED 		CD01 CD02 CD03 CD04 CD05 CD06 CD07 CD08 CD09 CD10
. Purposes (for crystallisation) * . . Light reflectivity light transmissivity or light absorptivity . . Heat conduction e.g. heat-retaining cooling or thermal insulating . . Flattening or reinforcing e.g. keeping shapes . . using lower layers as crystal seeds . . Other purposes . Materials (immediately before crystallisation) * . . Semiconductors . . . Silicon germanium silicon germanium or silicon carbide . . Plastics or organic materials
CD12 CD13 CD14 CD15 CD16 CD17 CD18 CD19 CD20
. . Insulators . . . Silicon oxides . . . Silicon nitrides . . . Silicon oxynitrides . . . Insulating metal compounds . . Metals or conductive metal compounds . . . Catalytic elements . . specifying material properties * . . Other purposes
CD21 CD22 CD23 CD24 CD25 CD26 CD27 CD28 CD29 CD30
. Shapes (immediately before crystallisation) . . characterised by flat shapes or arrangements . . characterised by cross-sections or thicknesses . . island or stripe . . Holes or grooves . . . Micropores or micro grooves (diameters of not more than 200 nm) . . characterised by multilayered structures . . Particles or particulates . having layers on the back of substrates . Others *
CE CE00
LAYER TO BE CRYSTALLISED 		CE01 CE02 CE03 CE04 CE05 CE06 CE07 CE08 CE09 CE10
. Materials * . . Group 4 . . . Silicon . . . . Polycrystalline silicon . . . . Amorphous silicon or microcrystalline silicon . . . Germanium or silicon germanium . . . Silicon carbides or germanium carbides . . Groups 3-5 or Groups 2-6 . . specifying material properties * . . Other materials
CE11 CE12 CE13 CE14 CE15 CE16 CE17 CE18 CE19
. Deposition processes . . CVD or chemical vapour deposition . . . Low pressure CVD . . . Plasma CVD . . PVD or physical vapour deposition . . . Vapour deposition or sputtering . . . Molecular beam epitaxy or MBE . . Liquid phases or ink-jets . . Other depositions
CE21 CE22 CE23 CE24 CE25 CE26 CE27 CE28 CE29 CE30
. Shapes (immediately before crystallisation) . . characterised by flat shapes e.g. necking . . characterised by cross sections . . specifying thickness . . . characterised by the thicknesses . . Multilayered structures . . characterised by the arrangements . . Patterning before crystallisation . . Thin-filming or polishing before crystallisation . . Other shapes
CE31 CE32 CE33 CE34 CE35 CE36 CE37 CE38 CE39 CE40
. introducing elements (immediately before crystallisation) . . Conductivity types . . Non-conductivity types . . for controlling crystallisation . . . Catalytic elements . . Ion implantations or ion doping . . Plasma doping or diffusing . . introducing elements simultaneously at the time of depositing . . characterised by introduced regions . . Other elements introduced
CE41 CE42 CE43 CE44 CE45 CE46 CE47 CE48 CE49 CE50
. Pretreatments (for crystallisation) . . Lasers lamps or RTAs . . . Dehydrogenation or degasification . . Heat-treatment or heaters . . . Dehydrogenation or degasification . . Amorphisation . . Plasma treatments . . Cleaning or treatments in liquid phases . . Other pretreatments . Others *
CF CF00
UPPER LAYER FORMED ON LAYER TO BE CRYSTALLISED 		CF01 CF02 CF03 CF04 CF05 CF06 CF07 CF08 CF09 CF10
. Purposes (for crystallisation) * . . Light reflectivity light transmissivity or light absorptivity . . Heat conduction e.g. heat-retaining cooling or thermal insulating . . Flattening or reinforcing e.g. keeping shapes . . using upper layers as crystal seeds . . Others . Materials (immediately before crystallisation) * . . Semiconductors . . . Silicon germanium silicon germanium or silicon carbide . . Plastics or organic materials
CF12 CF13 CF14 CF15 CF16 CF17 CF18 CF19 CF20
. . Insulators . . . Silicon oxides . . . Silicon nitrides . . . Silicon oxynitrides . . . Insulating metal compounds . . Metals or conductive metal compounds . . . Catalytic elements . . specifying material properties * . . Other purposes
CF21 CF22 CF23 CF24 CF25 CF26 CF27 CF28 CF30
. Shapes (immediately before crystallisation) . . characterised by flat shapes or arrangements . . characterised by cross-sections or thicknesses . . island or stripe . . Holes or grooves . . characterised by multilayered structures . . Particles or particulates . . Other shapes . Others *
CG CG00
LATERAL LAYER FORMED AT THE SIDE OF LAYER TO BE CRYSTALLISED 		CG01 CG02 CG03 CG04 CG05 CG06 CG07 CG08 CG09 CG10
. Purposes (for crystallisation) * . . Light reflectivity light transmissivity or light absorptivity . . Heat conduction e.g. heat-retaining cooling or thermal insulating . . Flattening or reinforcing e.g. keeping shapes . . using lateral layers as crystal seeds . . Other purposes . characterised by shapes (immediately before crystallisation) . . Other shapes . being the same layers as the upper ones . being the same layers as the lower ones
CG11 CG12 CG13 CG14 CG15 CG16 CG17 CG18 CG19 CG20
. Materials (immediately before crystallisation) * . . Insulators . . . Silicon oxides silicon nitrides or silicon oxynitrides . . . Insulating metal compounds . . Metals or conductive metal compounds . . . Catalytic elements . . Semiconductors . . Plastics or organic materials . . specifying material properties * . Others *
DD DD00
AFTER-TREATMENT OF LAYER TO BE CRYSTALLISED 		DD01 DD02 DD03 DD04 DD05 DD06 DD07 DD08 DD09 DD10
. Changing shapes . . Thin-filming or flattening . . Other changing shapes . Lasers lamps or RTAs . . removing catalytic elements . Heat-treatment or heaters . . removing catalytic elements . Plasma treatments . Cleaning or treatments in liquid phases . Others *
EE EE00
CRYSTALLISATION APPARATUS 		EE01 EE02 EE03 EE04 EE05 EE06 EE07 EE08 EE09 EE10
. characterised by optics * . . characterised by lenses . . characterised by mirrors . . Masks e.g. phase control . . . Slit masks shielding plates or shutters . . controlling interference . . Other optics . characterised by means for holding substrates or stages . Controlling focusing . characterised by details of the apparatus *
EE11 EE12 EE13 EE14 EE15 EE16 EE17 EE18 EE19 EE20
. Atmospheres gas supply or exhausting * . . controlling pressures . . . Vacuum or reduced pressures . . Oxygen or oxidising gases . . Hydrogen or reducing gases . . Nitrogen or inert gases . . Halogens . . Other atmospheres . Maintenance or cleaning . Others *
FF FF00
MEANS FOR CRYSTALLISATION 		FF01 FF02 FF03 FF04 FF05 FF06 FF07 FF08 FF09 FF10
. Lasers * . . Gas lasers * . . . Excimer lasers . . . Noble gases or carbon dioxide lasers . . Solid lasers * . . . YAG . . . YLF YVO4 or YAlO3 . . . Ruby alexandrite or sapphires . . . Semiconductor lasers . . Other lasers
FF11 FF12 FF13 FF14 FF15 FF16 FF17 FF18 FF19 FF20
. Lamps or RTAs * . . Continuous lighting lamps . . Flashlamps or pulse lighting lamps . . Halogen lamps . . Xenon lamps . . Mercury lamps . . Metal halide lamps . . Other lamps . Electrons e.g. beams . Ions plasmas or neutral particles e.g. beams
FF21 FF22 FF23 FF24 FF25 FF26 FF27 FF28 FF29 FF30
. Heat-treatment or heaters * . . Electric furnace heating . . Induction furnace heating or induction heating . . Susceptor heating . . Other heat treatments . characterised by temperature profiles . . Temperature rising or falling speeds . Melt crystallisation . Solid phase crystallisation . Multi-stage crystallisation
FF31 FF32 FF33 FF34 FF35 FF36 FF37 FF38 FF39 FF40
. using several kinds of means . . Two or more kinds of lasers . . . using split laser lights . . Two or more kinds of lamps . . Lasers or lamps . . Lasers and heaters . . Lamps and heaters . . Lasers lamps and heaters . . using several kinds of means simultaneously . . Other means
FF41 FF42 FF43 FF44 FF45 FF46 FF47 FF48 FF49 FF50
. specified only by wavelengths . . X-rays . . Ultra-violet lights . . Visible lights . . Infra-red lights . . Microwaves . Converted wavelengths e.g. higher harmonics . Other auxiliary means e.g. magnetic fields electrical fields or cooling . . Other means . Others *
FG FG00
PROCESS OF RADIATION 		FG01 FG02 FG03 FG04 FG05 FG06 FG07 FG08 FG09
. Continuous radiations . . Other continuous radiations . Pulse radiations . . specifying pulse widths or intervals . . . characterised by the widths or intervals e.g. pulse modulations . . characterised by pulse waveforms e.g. multi-peaks . . Other pulse radiations . specifying the number of radiation (single or plural) . . characterised by the number of radiation
FG11 FG12 FG13 FG14 FG15 FG18 FG19
. Direction of radiation . . Oblique radiation . . Backside radiation . . . Both sides . . Other directions . specifying density intensity or distribution of energy . . characterised by density intensity or distribution of energy
FG21 FG22 FG23 FG24 FG25 FG27 FG28 FG29 FG30
. specifying cross-sections or sizes . . characterised by shapes or sizes of cross-section . . . linear or web-formed . . . crescent dogleg corrugated or chevron-shaped . . Other shapes . Irradiating multiple areas simultaneously excluding using masks . Batch radiations . Computer control . Others *
FH FH00
PROCESS OF SCANNING 		FH01 FH02 FH03 FH04 FH05 FH06 FH07 FH08 FH10
. Scanning . . Beam scanning . . Stage scanning . . Step scanning . . Overlap scanning . . . of overlapped scanning lines . . Other scanning . scanning only desired areas (for crystallisation) . scanning an area several times
FH11 FH12 FH13 FH14 FH15 FH16 FH17 FH18 FH19 FH20
. characterised by scanning direction . . Oblique scanning . . changing the direction . . Other scanning directions . characterised by scanning speeds . . changing the speeds . . Other features of scanning speeds . Alignments or markers . Computer control . Others *
LL LL00
SEMICONDUCTOR FILM GROWTH TECHNIQUE (SEMICONDUCTOR LAYERS) 		LL01 LL02 LL03 LL04 LL05 LL07 LL08 LL09 LL10
. Growth techniques . . Vapour phases . . . Chemical vapour deposition (CVD) or vapour phase epitaxy (VPE) . . . . Plasma CVD . . . . Metal organic chemical vapour deposition (MOCVD) or metal organic vapour phase epitaxy (MOVPE) . . . Physical vapour deposition (PVD) . . . . Evaporation . . . . MBE or CBE . . . . Sputtering
LL12 LL13 LL14 LL16 LL18 LL20
. . Liquid phases . . . LPE . . . Deposition from aqueous solutions . . Melting . . Solid phases . Others *
LM LM00
GENERAL EPITAXIAL GROWTH TECHNIQUE 		LM01 LM02 LM03 LM04 LM05 LM06 LM08 LM09 LM10
. Selective growth * . . using masks . . without masks (modifying or processing substrates) . . characterised by processing masks or substrates . . in lateral direction; lateral overgrowth . . Other selective growth . characterised by growth techniques * . characterised by others than growth techniques * . Others *
LN LN00
LATTICE MATCHING OR MISMATCHING 		LN01 LN02 LN03 LN04 LN05 LN07 LN08 LN09 LN10
. Purposes * . . preventing adverse effects caused by strains . . . reducing or suppressing dislocation or cracks . . . reducing irregularities . . . reducing warps . . using strains positively . . . improving mobility or the like . . . Self-organisation . . Others
LN11 LN12 LN13 LN14 LN15 LN16 LN17 LN18 LN19 LN20
. Buffer or action layers * . . Superlattices . . having changed compositions . . . changing continuously . . . changing stepwise . . polycrystal or amorphous . . . Low temperature growth . . characterised by crystal orientation . . characterised by materials . . Other buffer or action layers
LN21 LN22 LN23 LN24 LN26 LN27 LN28 LN29 LN30
. Heat treatment * . . High temperatures . . Heating cycles . . Other heat treatment . Flattening . . Polishing . . . CMP . . Etching . . Other flattening
LN31 LN32 LN33 LN34 LN35 LN36 LN37 LN40
. Selective growth * . . using masks . . without masks (modifying or processing substrates) . . characterised by processing masks or substrates . . in lateral direction; lateral overgrowth . . having cavities . . Other selective growth . Others *
LP LP00
OTHER TECHNIQUES FOR BONDING OR SEPARATING 		LP01 LP02 LP04 LP05 LP06 LP07 LP08 LP09 LP10
. bonding to supporting substrates . . without interlayers . Separating from supporting substrates * . . Melting . . . Lasers . . . Heating . . Etching . . Mechanical removing . Others *
MM MM00
APPLICATION TO SEMICONDUCTOR ELEMENT OR THE LIKE 		MM01 MM02 MM03 MM04 MM05 MM06 MM07 MM08 MM09 MM10
. Electronic elements * . . Diodes . . Transistors . . . MOSFETs . . . MESFETs or HEMTs . . . JFETs . . . Bipolar transistors . Light emitting elements * . . Lasers . . Light emitting diodes
MM11 MM12 MM13 MM14 MM15 MM16 MM18 MM19 MM20
. Light receiving elements * . . Photodiodes . . . Solar cells . . Phototransistors . Elements having special structures or operations * . . Quantum structures . Epitaxial wafers . SOI substrates . Others *
NN NN00
SUBSTRATE MATERIALS, INCLUDING LAYERED MATERIALS USED AS SUBSTRATES 		NN01 NN02 NN03 NN04 NN05 NN06 NN07 NN08 NN09 NN10
. Semiconductors * . . Group 4 * . . . Silicon . . . Germanium or silicon germanium . . . Silicon carbides . . Group 3-5 * . . . Gallium arsenide . . . Indium phosphides . . . Nitrides . . Group 2-6 *
NN11 NN12 NN13 NN14 NN15 NN16 NN17 NN18 NN19 NN20
. Insulators * . . Insulating metal compounds * . . . Sapphires . . Glass . . Silicon oxides . . . Quartz . . Silicon nitrides or silicon oxynitrides . . Other insulators . Metals or conductive metal compounds * . Plastics or organic materials
NN21 NN22 NN23 NN24 NN25 NN27 NN29 NN30
. Crystallinity * . . Polycrystals . . Amorphousness . . Porosity . . Other crystallinity . Crystal orientation * . Multilayered structures . Others *
NP NP00
MATERIAL OF LAYER BETWEEN SUBSTRATE AND ACTIVE LAYER, E.G. BUFFER LAYERS OR MASKS 		NP01 NP02 NP03 NP04 NP05 NP06 NP07 NP08 NP09 NP10
. Semiconductors * . . Group 4 * . . . Silicon . . . Germanium or silicon germanium . . Group 3-5 * . . . Gallium arsenide . . . Indium arsenide . . . Indium gallium arsenide . . . Nitrides . . Group 2-6 *
NP11 NP12 NP13 NP14 NP15 NP17 NP19
. Insulators * . . Oxides * . . . Silicon oxides . . Silicon nitrides or silicon oxynitrides . . Other insulators . Metals or conductive metal compounds * . Plastic or organic materials
NP21 NP22 NP23 NP24 NP25 NP27 NP29 NP30
. Crystallinity * . . Polycrystals . . Amorphousness . . Porosity . . Other crystallinity . Crystal orientation * . Single layers . Others *
NQ NQ00
MATERIAL OF ACTION LAYER, ACTIVE LAYER, OR ELEMENT CONSTITUTING LAYER 		NQ01 NQ02 NQ03 NQ04 NQ05 NQ06 NQ07 NQ08 NQ09 NQ10
. Semiconductors * . . Group 4 * . . . Silicon . . . Germanium or silicon germanium . . Group 3-5 * . . . Gallium arsenide . . . Indium arsenide . . . Indium gallium arsenide . . . Nitrides . . Group 2-6 *
NQ11 NQ12 NQ13 NQ14 NQ17 NQ20
. Crystallinity * . . Polycrystals . . Amorphousness . . Others . Crystal orientation * . Others *
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