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F-Term-List

5F151 PHOTOVOLTAIC DEVICES
H01L31/04 -31/06,600;H02S10/00-10/40;30/00-99/00;H10K30/00;30/50-30/57;39/00-39/18
H01L31/04-31/06,600;H02S10/00-10/40;30/00-99/00 AA AA00
MATERIAL OF THE BODY 		AA01 AA02 AA03 AA04 AA05 AA07 AA08 AA09 AA10
. Group IV . . Single crystals . . Polycrystals . . Microcrystals * . . Amorphous materials * . Compound semiconductors * . . Group III-V, e.g. gallium arsenide (GaAs) * . . Group II-VI, e.g. cadmium sulfide (CdS) * . . Group I-III-VI, e.g. copper indium diselenide (CuInSe2) *
AA11 AA12 AA14 AA16 AA18 AA20
. Organic semiconductors * . . Phthalocyanine dye . Electrolytes or semiconductor electrodes, e.g. in wet methods * . Dopant materials * . Binder materials * . Other materials *
BA BA00
USE OR PURPOSE 		BA01 BA02 BA03 BA04 BA05
. Use . . for satellites . . for building materials . . for clocks or calculators . . for other use *
BA11 BA12 BA13 BA14 BA15 BA16 BA17 BA18
. Purposes, excluding higher efficiency and cost reduction . . for enlarging areas . . for increasing power . . for mass production or automation . . for flexibility . . for improving light transmissivity . . for stabilising output . . for enhancing environmental resistance
CA CA00
PROCESS FOR MANUFACTURING AMORPHOUS MATERIAL, INCLUDING MICROCRYSTAL 		CA01 CA02 CA03 CA04 CA05 CA06 CA07 CA08 CA09
. Growth layers . . p or p+ layers . . i layers . . n or n+ layers . . Interface layers . Raw materials . . Raw gases * . . Dilution gases * . . characterised by dilution ratios
CA11 CA12 CA13 CA14 CA15 CA16 CA17 CA18 CA19 CA20
. Physical vapour deposition (PVD) . . Vacuum deposition methods . . Sputtering . Chemical vapour deposition (CVD) . . Plasma chemical vapour deposition, e.g. glow discharge . . . using high frequencies . . . using microwaves . . Thermal chemical vapour deposition processes . . Photochemical vapour deposition processes . Other processes for manufacturing amorphous materials
CA21 CA22 CA23 CA24 CA26 CA27
. Device structures . . separating deposition chambers for depositing layers successively . . for discharging electrodes . . Shapes or arrangements of substrate holders or means for heating substrates . Additional mechanisms . . for applying magnetic fields
CA31 CA32 CA34 CA35 CA36 CA37 CA40
. Treatment processes . . Annealing or plasma treatments . Manufacturing conditions . . Pressure or vacuum levels . . Temperature of substrates . . Gas flow rates . Others
CB CB00
THIS PLACE COVERS THE SUBJECT MATTER CHARACTERISED BY PROCESSES FOR MANUFACTURING MATERIALS OTHER THAN AMORPHOUS MATERIALS, E.G. SILICON CRYSTAL GROWTH, CRYSTAL GROWTH OF GROUP III-V ELEMENTS, THIN FILM DEPOSITION OF GROUP II-VI ELEMENTS, TRANSPARENT ELECTRODES (SURFACE ELECTRODES) OR BACKPLANE ELECTRODES, DOPING, ETCHING, THERMALLY-TREATING THESE MATERIALS. 		CB01 CB02 CB03 CB04 CB05 CB06 CB08 CB09 CB10
. Silicon-crystal growth methods . . Single-crystal growth methods . . . CZ method or pulling-up methods . . Polycrystal growth methods . . . Casting . . . Ribbon methods, including edge-defined, film-fed growth (EFG) . Growth methods of group III-V elements . . on single-crystal silicon substrates . . Peeled single-crystal films
CB11 CB12 CB13 CB14 CB15 CB18 CB19 CB20
. Film deposition . . Chemical vapour deposition (CVD) . . Coating or baking . . Vacuum deposition . . Sputtering . Doping, including limiting concentration . . Ion implantation . . Thermal diffusion
CB21 CB22 CB24 CB25 CB27 CB28 CB29 CB30
. Etching . . Dry etching . Heat treatments . . Light annealing . Forming electrodes . Separating elements . characterised by manufacturing conditions . characterised by other manufacturing processes
DA DA00
ELEMENT STRUCTURE (DETAILS THEREOF EA-HA) 		DA01 DA02 DA03 DA04 DA05 DA06 DA07 DA08 DA09 DA10
. Shapes of elements . Junctions . . pn junctions . . pin junctions . . Schottky junctions . . . Schottky metals * . . Heterojunctions . . Metal-insulator-semiconductor (MIS) junctions . . . Materials of insulation films * . . This place covers the subject matter having a structure where the p electrode and the n electrode are formed on the backplane of a solar cell.
DA11 DA12 DA13 DA15 DA16 DA17 DA18 DA19 DA20
. Band structures . . Graded bands . . Superlattices . Tandem structures . . Types thereof . . . repeating the same junctions . . Intermediate layers for bonding layers . . . pn tunnel layers . Others
EA EA00
MODULARISING OR INTEGRATING 		EA01 EA02 EA03 EA04 EA05 EA06 EA07 EA08 EA09 EA10
. Shapes of modules . Connection structures . . at the sides of the elements . . at the ends of the substrates . . in brick-lay patterns . . to diodes . Patterning . . Objects to be patterned . . . Surface electrodes . . . Element bodies
EA11 EA13 EA14 EA15 EA16 EA17 EA18 EA19 EA20
. . . Backplane electrodes . . Means therefor . . . Mask deposition . . . Screen printing . . . Laser scribers . Processing connectors . Protective films * . Interconnector . Other modularizing
FA FA00
ELECTRODE 		FA01 FA02 FA03 FA04 FA06 FA07 FA08 FA09 FA10
. Materials thereof . . Transparent electrodes * . . . Tin oxide (SnO2) . . . Indium tin oxide (ITO) . . Metal electrodes * . . Organic materials * . . Dopants * . . Members of blocking layers * . . Pastes *
FA11 FA12 FA13 FA14 FA15 FA16 FA17 FA18 FA19
. Structures thereof . . Kinds thereof . . . Surface electrodes . . . . Collectors . . . Backplane electrodes . . Shapes thereof . . Structures . . . double-layered . . . textured
FA21 FA22 FA23 FA24 FA25 FA30
. . Functions . . . for preventing the surfaces from reflecting light . . . combined with reflective layers . . . decreasing resistance . . . combined with doping, e.g. electric fields of the backplanes . Other electrodes
GA GA00
SUBSTRATE 		GA01 GA02 GA03 GA04 GA05 GA06
. Materials thereof . . conductive * . . insulating * . . Semiconductor substrates * . . flexible * . . for coating *
GA11 GA12 GA13 GA14 GA15 GA16 GA20
. Structures or treatments . . smoothing the surfaces . . . by coating . . roughening the surfaces . . . by chemical etching . . . by coating . Others
HA HA00
OTHER ELEMENT 		HA01 HA02 HA03 HA04 HA05 HA06 HA07
. Anti-reflection films . . Materials . . . inorganic * . . . organic * . . Structures thereof . . . Optical multilayer films . . . textured
HA11 HA12 HA13 HA14 HA15 HA16 HA17 HA18 HA19 HA20
. Filter films . . Kinds thereof . . . Phosphor films . . . Optical multilayer films . . . Colour filters or inks . . Functions thereof . . . converting wavelengths . . . dividing wavelengths . Window layers . OthersThis place covers the subject matter characterised by "other elements," which is not covered by either of HA01-HA07 for anti-reflection films, HA11-HA18 for filter films, or HA19 for window layers.
JA JA00
GENERATOR 		JA01 JA02 JA03 JA04 JA05 JA06 JA07 JA08 JA09
. Arrays or panels . . Panel structures . . . Materials of windows * . . . Fillers * . . . Backplane sheet . . . Laminating modules . . . connecting modules . . . . diode-connected, e.g. for preventing currents from reversing . . . connecting panels
JA12 JA13 JA14 JA15
. . connecting panels . . Supporting structures . . . for adjusting angles, including solar tracking apparatus . . Cleaning devices or snow-proof structures
JA21 JA22 JA23 JA24 JA25 JA27 JA28 JA29 JA30
. Concentrators . . Lenses . . Reflecting mirrors or reflecting plates . . Optical fibres . . having optical filters . Terminal boxes . combined with secondary cells . combined with apparatus using solar heat . Generators not otherwise provided for
KA KA00
CONTROLLING OR TESTING 		KA01 KA02 KA03 KA04 KA05 KA06 KA07 KA08 KA09 KA10
. Stabilising output . . Monitoring . . Controlling . . . Constant voltage circuits, e.g. DC-DC converters . . . switching power supplies . . . controlling the quantity of incident light . Maintenance . . detecting or warning failures . Apparatus for testing functions . Controlling or testing not otherwise provided for
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