F-Term-List

H01L21/203-21/203@Z;21/363

AA00
DEPOSITION MEANS

AA01

AA02

AA03

AA04

AA05

AA06

AA07

AA08

AA10

. Vepor deposition

. . Ion plating

. . Hot walls

. . Molecular beams (MBE) and atomic beams

. . . Metal organic molecular beams (MOMBE)

. . Ion beams

. . . Cluster ion beams (ICB)

. Sputtering

. Other deposition means

BB00
DEPOSITION DEVICES

BB01

BB02

BB03

BB04

BB05

BB06

BB07

BB08

BB09

. Sources of substances to be deposited, and auxiliary devices thereof

. . Pots, cells, hearths, and furnaces

. . . Coating

. . . Knudsen cells

. . Gas sources

. . . Mechanisms for supply of gases

. . . Cracking mechanisms, and cracker cells

. . Sources with multiple originations

. . Ionization mechanisms and sources for ions

BB11

BB12

BB13

BB14

BB15

BB16

BB17

BB18

BB19

. . Openings

. . . Narrow openings, orifices, and nozzles

. . Mechanisms that control the progression of the substance deposition

. . . Deflection mechanisms using electric and magnetic fields

. . . Separation, partitioning, and barriers of deposited substances

. . . Shielding, covering plates, and shutters between substrates and deposited substances

. . . Reflection mechanisms (i.e., reflection plates and reflectors)

. . . Collimators

. . . Inclination and movement of containers and and control and adjustment thereof

BB21

BB22

BB23

BB24

BB25

BB26

BB27

. . Heat shields and thermal insulation

. . Sputtering targets

. . Means for applying of energy to the source of deposited substances

. . Means for measurement of temperature (i.e., thermocouple)

. . Use for cleaning of devices

. . Replenishment and supply of deposited substances (i.e., sources and melts)

. . Materials and material quality

BB31

BB32

BB33

BB34

BB35

BB36

BB37

BB38

. Mechanisms for handling of substrates

. . Shutters around substrates

. . Mechanisms for holding of substrates, susceptors, and holders

. . . Holding of multiple substrates

. . . Mechanisms for maintenance of the substrate angle

. . Mechanisms for movement of substrates

. . . Manipulators

. . . Mechanisms for rotating operations of substrates

BB41

BB42

BB43

BB44

BB45

BB46

BB47

BB48

BB49

. . Mechanisms for the substrate temperature and control mechanisms thereof

. . . Mechanisms for heating of substrates

. . . Heat-radiant elements

. . Means for consecutive treatments to multiple substrates

. . Use for cleaning of substrate-handling mechanisms

. Treatment chambers

. . Mechanisms for maintenance of a vacuum and exhaust mechanisms

. . Observation windows and maintenance of functions thereof

. . Pre-treatment mechanisms and spare rooms

BB51

BB52

BB53

BB54

BB55

BB56

BB57

BB58

BB59

BB60

. Measurement and monitoring units

. . Measurement and monitoring of temperature

. . Measurement and monitoring of the thickness of deposited films

. . Measurement and monitoring of the conditions of deposited films and crystals

. . Measurement and monitoring by reflection high energy electron diffraction (FHEED)

. Control and adjustment units

. . Means for control and adjustment of temperature

. . Means for control of the film thickness

. . Means for control of the sequence (i.e., steps)

. Other deposition devices

DD00
DEPOSITED SUBSTANCES

DD01

DD02

DD03

DD04

DD05

DD06

DD07

DD08

DD09

. III-V-group compounds

. . BN

. . GaAs

. . GaAsP

. . GaAlAs

. . GaAlAsP

. . GaP

. . GaInP

. . GaInSb

DD11

DD12

DD13

DD16

DD17

DD18

. . InP

. . InSb

. . InGaAsP

. Si

. SiC

. CdSiP

DD21

DD22

DD23

DD24

DD25

DD27

DD28

DD30

. CdTe

. HgCdTe

. ZnSe

. PbSe

. Organic substances

. Insulators

. Metals

. Other deposited substances

GG00
DEPOSITED CONDITIONS

GG01

GG02

GG03

GG05

GG06

GG10

. Single crystals with epitaxial growth

. Polycrystals

. Amorphous conditions

. Selective deposition

. . Masks

. Other deposited conditions

HH00
SUBSTRATES

HH01

HH03

HH04

HH05

HH07

HH08

HH10

. Band-like elements and webs

. Semiconductor substrates

. Insulator substrates

. Metal substrates

. Surface conditions of substrates

. . Crystal orientation and surfaces of the substrate

. Other substrates

JJ00
TYPES THAT ELECTRICALLY CONDUCT DEPOSITION UNITS

JJ01

JJ03

JJ10

. P types

. N types

. Other conduction types

KK00
DOPANTS

KK01

KK02

KK03

KK04

KK05

KK06

KK07

KK08

KK10

. Silicon (Si)

. Germanium (Ge)

. Boron (B)

. Zinc (Zn)

. Lithium (Li)

. Sulfur (S)

. Carbon (C)

. Tallurium (Te)

. Other dopants

LL00
DEVICES AND STRUCTURES TO BE USED

LL01

LL02

LL03

LL04

LL05

LL06

LL07

LL08

LL09

. Light-emitters

. . Light-emitting diodes

. . Semiconductor lasers

. Light-receptors

. . Photo diodes

. . Phototransistors

. Field-effect transistors (FET)

. . MISFET and MESFET

. . Two-dimensional electron gas transistors and HEMT

LL11

LL12

LL13

LL14

LL16

LL17

LL18

LL19

LL20

. Bipolar transistors

. SOI structures

. . Thin-film transistors (TFT)

. Integrated circuits (IC) and LSI

. Devices and structures using super lattices

. Devices and structures using quantum wells, quantum fine beams, and quantum boxes

. Devices and structures using modulation dopes

. Devices and structures using atomic plane dopes

. Other devices and structures to be used

NN00
DEPOSITED CONDITIONS AND STATUS

NN01

NN02

NN03

NN04

NN05

NN06

NN07

NN10

. Temperature

. Deposition speed

. Difference in deposited conditions and status of multiple substances

. Pressure

. Atmosphere

. . Addition of gases

. Irradiation of energy beams on substances other than deposited substances

. Other deposited conditions and status

PP00
PRETREATMENTS AND POST-TREATMENTS

PP01

PP02

PP03

PP04

PP05

PP06

PP07

PP08

. Purification treatments

. . Thermal cleaning

. Heat treatments and annealing

. Ion injection and irradiation

. Reduction treatments

. Chemical polishing and etching

. Mechanical polishing

. Treatments using masks

PP11

PP12

PP13

PP14

PP15

PP16

PP18

PP19

PP20

. Formation of electrodes

. . Ohmic contact

. Physical deposition in different processes

. Other growth and deposition types

. . Chemical vapor deposition (CVD)

. . Liquid phase epitaxial (LPE)

. Sequential treatment processes

. Simultaneous treatment processes and parallel treatment processes

. Other pretreatments and post-treatments

RR00
PURPOSE, EFFECTS, AND FUNCTIONS

RR01

RR02

RR03

RR04

RR05

RR06

RR07

RR08

RR09

RR10

. Improved productivity

. . Improved throughput

. . . Incresed deposition areas

. Stabilized quality

. Improved capabilities

. Improved conditions of deposited films and improved crystalization

. Improved reliability

. Improved cost saving and reduction

. Environmental measures

. Other purpose, effects and functions

5F103	Physical deposition of substances that are components of semiconductor devices
	H01L21/203 -21/203@Z;21/363