F-Term-List

H01S5/00-5/50,630

AA00
BASIC STRUCTURE

AA01

AA02

AA03

AA04

AA05

AA06

AA07

AA08

AA09

AA10

. Stripe-type structures

. . Gain-waveguide structures

. . . Structures that form current paths

. . . . Narrow-electrode structures

. . . . Planar-stripe-like structures

. . . . Combinations of groove and full-surface diffusion

. . . Structures that form current-inhibiting sections

. . . . Proton irradiation types

. . . . Inner-stripe planar types (ISP)

. . . Depletion-layer control structures

AA11

AA12

AA13

AA14

AA15

AA16

AA17

AA18

AA19

AA20

. . . Mesa-stripe structures

. . Structures of the refractive-index-distribution waveguide

. . . Rib types

. . . . Substrate-stripe structures

. . . . . Channeled-substrate planar type (CSP)

. . . . . Planoconvex waveguide types (PCW)

. . . . . Terraced substrate types (TS)

. . . . . V-channeled-substrate inner-stripe types (VSIS)

. . . . . Twin-ridge substrate types (TRS)

. . . . Structures that use grooves

AA21

AA22

AA23

AA24

AA25

AA26

. . . Buried types

. . . . Buried heterostructures (BH)

. . . . Double-channel planar buried heterostructures (DCPBH)

. . . . Burying in V-shaped grooves

. . . . Burying in U-shaped grooves

. . . . Use of mesas

AA31

AA32

AA33

AA34

AA35

AA36

. . . Provision for distribution in active layers

. . . . Impurity-distribution types

. . . . . Transverse junction stripes (TJS)

. . . . . Deep zinc-diffusion stripes (DDS)

. . . . Shape-distribution types

. . . Other waveguide structures for distributing the refractive index

AA41

AA42

AA43

AA44

AA45

AA46

AA47

. Junction structures

. Layer structures

. . Light guide layers

. . . Installation on one side of the active layer

. . . Installation on both sides of the active layer

. . . . Graded refractive index, separate confinement heterostructures (GRIN-SCH)

. . . Separation from the active layer in wide forbidden bands

AA51

AA52

AA53

AA54

AA55

. . . Other intervening layers

. . . Layers to stop diffusion

. . . Layers to stop etching

. . . Anti-meltback layers

. . . Buffer layers

AA61

AA62

AA63

AA64

AA65

AA66

AA67

. Electrode structures

. Resonator structures

. . Diffraction grating structures

. . . Distribution-feedback types (DBF)

. . . Distribution-reflection types (DBR)

. . Ring-resonator types

. . Composite-resonator types

AA71

AA72

AA73

AA74

AA75

AA76

AA77

. Superlattices

. . Active layers

. . . Single quantum wells (SQW)

. . . Multiple quantum wells (MQW)

. . . Quantum wires or boxes

. . Light guide layers

. . Clad layers

AA81

AA82

AA83

AA84

AA85

AA86

AA87

AA88

AA89

. End-surface structures

. . End-surface-coating structures

. . . Reflective or anti-reflective films

. . . Protective films

. . . Other end-surface-coating structures

. . Window structures

. . . Structures that act as non-excited regions

. . . Structures for burying of active layers

. Other basic structures

AB00
ADDITIONAL AND COMBINED FUNCTIONS

AB01

AB02

AB03

AB04

AB05

AB06

. Integration

. . Arraying

. . . Phase-synchronous types

. . . Multiple-beam types

. . . Variants with identical wavelengths

. . . . Multiple wavelengths

AB11

AB12

AB13

AB14

AB15

AB16

AB17

AB18

AB19

AB20

. . Optoelectronic integrated circuits (OEIC)

. . . Monolithic types

. . . . Variants that are integral with the monitor

. . . . Variants that are integral with the drive circuit

. . . Hybrid types

. Surface light emission

. . Vertical-resonator types

. . Horizontal-resonator types

. . . Variants that use reflective mirrors

. . . Variants that use diffraction gratings

AB21

AB22

AB23

AB24

AB25

AB26

AB27

AB28

AB29

AB30

. Coupling with other functional elements

. Additional functions

. . Second harmonic generators (SHG) for conversion of wavelengths

. . Bistability

. Combined optical components

. . Lenses integral with laser diodes

. . External lenses

. . Fibers

. . External mirrors

. . Optical isolators

BA00
APPLICATIONS

BA01

BA02

BA03

BA04

BA05

BA06

BA07

BA08

BA09

. Optical communications

. . Light sources

. . Optical communications for relaying purposes

. Optical pick-ups

. . Optical communications for video disks (VD), digital audio disks (DAD), or compact disks (CD)

. . Optical communications for optical disk files

. Laser printers

. Optical logic elements

. Other applications

CA00
ACTIVE-LAYER AND CLADDING MATERIALS

CA01

CA02

CA03

CA04

CA05

CA06

CA07

. Groups III and V

. . Binary materials

. . Ternary materials

. . . Gallium arsenide (GaAs) and gallium aluminum arsenide (GaAlAs)

. . . Gallium aluminum arsenide (GaAlAs) and gallium aluminum arsenide (GaAlAs)

. . . Indium gallium phosphide (InGaP) and indium gallium phosphide (InAlP)

. . . Other ternary materials

CA11

CA12

CA13

CA14

CA15

CA16

CA17

CA18

CA19

CA20

. . Quaternary materials

. . . Indium gallium arsenic phosphide (InGaAsP) and indium phosphide (InP)

. . . Indium gallium arsenic phosphide (InGaAsP) (i.e., for visible light)

. . . Indium gallium aluminum phosphide (InGaAlP)

. . . Indium gallium aluminum arsenide (InGaAlAs)

. . . Gallium aluminum arsenic phosphide (GaAlAsP)

. . . Other quaternary materials

. . Materials composed of five or more elements

. . . Indium gallium aluminum arsenic phosphide (InGaAlAsP)

. . . Other materials composed of five or more elements

CA21

CA22

CA23

CA24

. Groups IV and VI

. Groups II and VI

. Groups I, III, and VII

. Other active layer and cladding materials

CB00
MATERIALS OF OTHER THAN THE ABOVE

CB01

CB02

CB03

CB04

CB05

CB06

CB07

CB08

CB09

CB10

. Substrates

. . Groups III and V

. . . Semi-insulating substrates

. . Group IV

. . Other substrate materials

. Buffer layers

. . Uniform layers

. . Graded layers

. . Distorted superlattice layers

. Cap layers

CB11

CB12

CB13

CB14

CB15

CB16

CB17

CB18

CB19

CB20

. Buried layers

. Dopants

. . Dopants for active layers

. . . Impurities that determine conduction type

. . . . Impurities of both conductions types

. . . . Composite doping

. . . . Other impurities that determine conduction type

. . . Dopants for other active layers

. . Dopants for other layers

. End-surface-coating materials

CB21

CB22

CB23

. Electrodes

. . Element electrodes

. . Electrodes for mounting

DA00
MANUFACTURING METHODS

DA01

DA02

DA03

DA04

DA05

DA06

DA07

. Crystal growth

. . Liquid-phase epitaxy (LPE)

. . . Use of meltback

. . Vapor-phase epitaxy (VPE)

. . . Metal-organic-chemical vapor deposition (MOCVD)

. . Molecular-beam epitaxy (MBE)

. . Other crystal-growth methods

DA11

DA12

DA13

DA14

DA15

DA16

DA17

. Doping

. . Heat diffusion

. . . Solid-phase diffusion

. . Ion implantation

. . Production of irregualar superlattice structures

. Heat treatments

. . Laser annealing

DA21

DA22

DA23

DA24

DA25

DA26

DA27

DA28

DA29

DA30

. Etching

. . Wet etching

. . . Etchants

. . Dry etching

. . . Reactive-ion etching (RIE)

. . . Other dry-etching methods

. Oxidation treatments

. . Anodic oxidation

. . Plasma oxidation

. Electrode formation

DA31

DA32

DA33

DA34

DA35

. Resonator-surface formation

. . Cleavage-surface formation

. End-surface coating

. Element separation

. Other methods or conditions of manufacture

EA00
CHARACTERISTICS OR PURPOSE

EA01

EA02

EA03

EA04

EA05

EA06

EA07

EA08

. Provision of multiple longitudinal modes

. Wavelength

. . Stabilization

. . Provision of multiple wavelengths

. . Provision of shorter wavelengths

. . . 600-nm band

. . . Bands of less than 600 nm

. . Provision of far-infrared rays (i.e., 2 or more ?)

EA11

EA12

EA13

EA14

EA15

EA16

EA17

EA18

EA19

EA20

. Optical output

. . Modulation

. . . Stabilization during modulation

. . . Increased speed

. . Stabilization

. . . Prevention of kink generation

. . . Waveform stabilization

. . Control of beam shape

. . . Angle of radiation

. . . Circular beams

EA21

EA22

EA23

EA24

EA25

EA26

EA27

EA28

EA29

. . Control of deflection

. . Control of polarization

. Control of threshold values

. Provision of more output

. Prevention of cushion vibration

. Prevention of return light

. Prevention of noise or abnormal phenomena

. Prevention of deterioration

. Other characteristics or purposes

FA00
HOUSING STRUCTURES

FA01

FA02

FA03

FA04

FA05

FA06

FA07

FA08

. Monitors

. . Variants with built-in photodiodes

. . . Production of multiple beams

. . . Characteristic support structures

. . Variants with externally-mounted photodiodes

. Modular structures

. . Characteristic fiber-support structures

. . Characteristic lens-support structures

FA11

FA12

FA13

FA14

FA15

FA16

FA17

FA18

. Mounting (e.g., heat sinks)

. . Materials

. . . Silicon (Si)

. . . Copper (Cu)

. . . Other materials used for mounting

. . Shapes

. . . Anti-reflective structures

. . Metallized electrodes

FA21

FA22

FA23

FA24

FA25

FA26

FA27

FA28

FA29

FA30

. . Bonding or fastening

. . . Materials

. . . Positioning

. . Temperature-control means

. . . Thermoelectric devices

. . . Liquid cooling

. Wire bonding

. Lead-electrode structures

. Structures for sealing

. Other housing structures

GA00
DRIVE CIRCUITS

GA01

GA02

GA03

GA04

. Automatic power control (APC)

. . Control circuits

. . . Constant-bias current

. . . Pulse current

GA11

GA12

GA13

GA14

GA15

GA16

GA17

GA18

GA19

GA20

. . Circuits for sensing

. . . Optical output

. . . Wavelength

. . . Temperature

. . . Voltage and current

. . . Presence or absence of signals

. . . Noise, deterioration, or failure

. . Reference values

. . . Temperature-dependent values

. . . Multiple values

GA21

GA22

GA23

GA24

GA25

GA26

GA27

. Temperature-control devices

. . Control by optical output

. . Control by sensing of temperature

. Modulation means

. Means of controlling transient characteristics

. . Pulses for preheating

. . Adjustment of timing to turn off voltage

GA31

GA32

GA33

GA34

GA35

GA36

GA37

GA38

. Means for prevention of breakdowns

. . Protective circuits

. . . Circuits that sense overcurrent

. . . Surge-elimination circuits

. . Alarms

. Means of exciting other than by current

. Control of multiple light sources

. Other drive circuits

HA00
MEASUREMENT AND INSPECTION

HA01

HA02

HA03

HA04

HA05

HA06

HA07

HA08

HA09

HA10

. Shape of the objects to be inspected

. . Wafers

. . Arrays

. . Chips

. . Packages

. Parameters for measurement or inspection

. . Threshold current

. . Spectra

. . External appearance

. . Other parameters for measurement or inspection

HA11

HA12

. Methods of measurement or inspection

. Other measurement or inspection elements

5F073	Semiconductor lasers
	H01S5/00 -5/50,630